公开(公告)号：US09728416B2

公开(公告)日：2017-08-08

申请号：US13842532

申请日：2013-03-15

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Iwao Toshihiko ,  Peter L. G. Ventzek

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J37/32256 ,  H01J37/32311 ,  H01L21/67069

Abstract: A resonator system is provided with one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator system can be coupled to a process chamber using one or more interface and isolation assemblies, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. The plasma tuning rods can be configured to couple the EM-energy from the resonant cavities to the process space within the process chamber.

公开(公告)号：US09697993B2

公开(公告)日：2017-07-04

申请号：US14534460

申请日：2014-11-06

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Zhiying Chen

IPC: C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC classification number: H01J37/32935 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32697 ,  H01J37/32899 ,  H01L21/3065 ,  H01L21/67069

Abstract: This disclosure relates to a plasma processing system for controlling plasma density across a substrate and maintaining a tight ion energy distribution within the plasma. In one embodiment, this may include using a dual plasma chamber system including a non-ambipolar plasma chamber and a DC plasma chamber adjacent to the non-ambipolar system. The DC plasma chamber provide power to generate the plasma by rotating the incoming power between four inputs from a VHF power source. In one instance, the power to each of the four inputs are at least 90 degrees out of phase from each other.

公开(公告)号：US09455133B2

公开(公告)日：2016-09-27

申请号：US13854910

申请日：2013-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki Denpoh ,  Peter L G Ventzek ,  Lin Xu ,  Lee Chen

IPC: H01L21/02 ,  H01J31/00 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509

CPC classification number: H01L21/02 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  H01J31/00 ,  H01J37/3244 ,  H01J37/32596

Abstract: A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate.

公开(公告)号：US20160268136A1

公开(公告)日：2016-09-15

申请号：US15164312

申请日：2016-05-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Lee Chen ,  Zhiying Chen ,  Jianping Zhao ,  Merritt Funk

IPC: H01L21/263 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/263 ,  H01J37/32431 ,  H01J37/32568 ,  H01J37/32697 ,  H01L21/67069

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may be configured to enable non-ambipolar diffusion to counter ion loss to the chamber wall. The plasma processing system may include a ring cavity coupled to the plasma processing system that is in fluid communication with plasma generated in the plasma processing system. The ring cavity may be coupled to a power source to form plasma that may diffuse ions into the plasma processing system to minimize the impact of ion loss to the chamber wall.

Abstract translation: 本公开涉及一种等离子体处理系统，用于控制正被处理的衬底的边缘或周边附近的等离子体密度。 等离子体处理系统可以包括等离子体室，其可以使用等离子体接收和处理衬底，用于蚀刻衬底，掺杂衬底或在衬底上沉积膜。 本公开涉及等离子体处理系统，其可以被配置为使得非双极扩散能够抵消对室壁的离子损失。 等离子体处理系统可以包括耦合到等离子体处理系统的环形空腔，该等离子体处理系统与等离子体处理系统中产生的等离子体流体连通。 环腔可以耦合到电源以形成等离子体，其可以将离子扩散到等离子体处理系统中以最小化离子损失对室壁的影响。

公开(公告)号：US20160198559A1

公开(公告)日：2016-07-07

申请号：US15069385

申请日：2016-03-14

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Merritt FUNK ,  Zhiying CHEN

IPC: H05H3/02

CPC classification number: H05H3/02

Abstract: Embodiments include a chemical processing apparatus and method of using the chemical processing apparatus to treat a substrate with a mono-energetic space-charge neutralized neutral beam-activated chemical process which is comprised of a substantially anisotropic beam of neutral particles. The chemical processing apparatus comprises a first plasma chamber for forming a first plasma at a first plasma potential, and a second plasma chamber for forming a second plasma at a second plasma potential greater than the first plasma potential, wherein the second plasma is formed using electron flux from the first plasma. Further, the chemical processing apparatus comprises an ungrounded dielectric (insulator) neutralizer grid configured to expose a substrate in the second plasma chamber to the substantially anisotropic beam of neutral particles traveling from the neutralizer grid.

Abstract translation: 实施方案包括化学处理装置和使用化学处理装置用基本上各向异性的中性粒子束组成的单能空间电荷中和的中性束活化化学工艺处理衬底的方法。 化学处理装置包括用于形成第一等离子体电位的第一等离子体的第一等离子体室和用于在大于第一等离子体电位的第二等离子体电位下形成第二等离子体的第二等离子体室，其中使用电子 来自第一等离子体的通量。 此外，化学处理装置包括未被接地的电介质（绝缘体）中和器栅格，其被配置为将第二等离子体室中的衬底暴露于从中和器栅格行进的基本上各向异性的中性粒子束。

公开(公告)号：US20150348756A1

公开(公告)日：2015-12-03

申请号：US14288572

申请日：2014-05-28

Applicant: Tokyo Electron Limited

Inventor： Peter L.G. Ventzek ,  Lee Chen

IPC: H01J37/32

CPC classification number: H01J37/32229 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/3222

Abstract: This disclosure relates to a plasma processing system that can use a single power source assembly to generate inductively coupled plasma (ICP) and surface wave plasma using the same physical hardware. The power source assembly may include an antenna plate that may include a conductive material be used an ICP coil for a radio frequency (RF) power source and as a slot antenna for a microwave source.

Abstract translation: 本公开涉及一种等离子体处理系统，其可以使用单个电源组件来生成使用相同物理硬件的电感耦合等离子体（ICP）和表面波等离子体。 电源组件可以包括天线板，其可以包括用于射频（RF）电源的ICP线圈和用作微波源的缝隙天线的导电材料。

公开(公告)号：US20140377966A1

公开(公告)日：2014-12-25

申请号：US14309090

申请日：2014-06-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Merritt Funk ,  Jianping Zhao ,  Lee Chen

IPC: H01L21/268 ,  H01L21/67

CPC classification number: H01L21/268 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32266

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

Abstract translation: 公开了一种处理系统，其具有具有内部空腔的动力传递元件，该内部空腔将电磁能量靠近内腔中的连续狭缝传播。 连续狭缝在内腔和衬底处理室之间形成开口。 电磁能可以在连续狭缝中产生交替电荷，使得能够产生可以传播到处理室中的电场。 可以在进入内部空腔之前调节电磁能量以改善电场的均匀性或稳定性。 调节可以包括但不限于相角，场角和进入内腔的进给次数。

公开(公告)号：US20140273538A1

公开(公告)日：2014-09-18

申请号：US14212438

申请日：2014-03-14

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Zhiying Chen ,  Jianping Zhao ,  Merritt Funk

IPC: H01L21/263

CPC classification number: H01L21/263 ,  H01J37/32431 ,  H01J37/32568 ,  H01J37/32697 ,  H01L21/67069

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may be configured to enable non-ambipolar diffusion to counter ion loss to the chamber wall. The plasma processing system may include a ring cavity coupled to the plasma processing system that is in fluid communication with plasma generated in the plasma processing system. The ring cavity may be coupled to a power source to form plasma that may diffuse ions into the plasma processing system to minimize the impact of ion loss to the chamber wall.

Abstract translation: 本公开涉及一种等离子体处理系统，用于控制正被处理的衬底的边缘或周边附近的等离子体密度。 等离子体处理系统可以包括等离子体室，其可以使用等离子体接收和处理衬底，用于蚀刻衬底，掺杂衬底或在衬底上沉积膜。 本公开涉及等离子体处理系统，其可以被配置为使得非双极扩散能够抵消对室壁的离子损失。 等离子体处理系统可以包括耦合到等离子体处理系统的环形空腔，该等离子体处理系统与等离子体处理系统中产生的等离子体流体连通。 环腔可以耦合到电源以形成等离子体，其可以将离子扩散到等离子体处理系统中以最小化离子损失对室壁的影响。

公开(公告)号：US10734200B2

公开(公告)日：2020-08-04

申请号：US15352339

申请日：2016-11-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Lee Chen

IPC: C23C16/00 ,  H01L21/326 ,  H01J37/32 ,  H01L21/3065

Abstract: A chemical processing system and a method of using the chemical processing system to treat a substrate with a mono-energetic space-charge neutralized neutral beam-activated chemical process is described. The chemical processing system comprises a first plasma chamber for forming a first plasma at a first plasma potential, and a second plasma chamber for forming a second plasma at a second plasma potential greater than the first plasma potential, wherein the second plasma is formed using electron flux from the first plasma. Further, the chemical processing system comprises a substrate holder configured to position a substrate in the second plasma chamber.

公开(公告)号：US10354841B2

公开(公告)日：2019-07-16

申请号：US15093031

申请日：2016-04-07

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Barton G. Lane ,  Merritt Funk ,  Radha Sundararajan

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

Abstract: The present invention provides a SWP (surface wave plasma) processing system that does not create underdense conditions when operating at low microwave power and high gas pressure, thereby achieving a larger process window. The DC ring subsystem can be used to adjust the edge to central plasma density ratio to achieve uniformity control in the SWP processing system.