公开(公告)号：US20060068588A1

公开(公告)日：2006-03-30

申请号：US10953466

申请日：2004-09-30

申请人： Hideaki Yamasaki ,  Kenji Suzuki ,  Emmanuel Guidotti ,  Enrico Mosca ,  Gert Leusink ,  Yumiko Kawano ,  Fenton McFeely ,  Sandra Malhotra

发明人： Hideaki Yamasaki ,  Kenji Suzuki ,  Emmanuel Guidotti ,  Enrico Mosca ,  Gert Leusink ,  Yumiko Kawano ,  Fenton McFeely ,  Sandra Malhotra

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76873

摘要： A method for depositing Ru and Re metal layers on substrates with high deposition rates, low particulate contamination, and good step coverage on patterned substrates is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas and a metal precursor selected from the group consisting of a ruthenium-carbonyl precursor and a rhenium-carbonyl precursor. The method further includes depositing a Ru or Re metal layer on the substrate by a thermal chemical vapor deposition process at a process chamber pressure less than about 20 mTorr.

摘要翻译： 提出了一种用于在具有高沉积速率，低颗粒污染和在图案化衬底上良好的阶梯覆盖的衬底上沉积Ru和Re金属层的方法。 该方法包括在处理室中提供衬底，在处理室中引入工艺气体，其中处理气体包括载气和选自羰基钌羰基前体和铼羰基前体的金属前体。 该方法还包括通过热化学气相沉积工艺在小于约20mTorr的处理室压力下在衬底上沉积Ru或Re金属层。

公开(公告)号：US20050221002A1

公开(公告)日：2005-10-06

申请号：US10814768

申请日：2004-03-31

申请人： Kazuhito Nakamura ,  Cory Wajda ,  Enrico Mosca ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

发明人： Kazuhito Nakamura ,  Cory Wajda ,  Enrico Mosca ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

IPC分类号： C23C16/16 ,  C23C16/458 ,  C23C16/00

CPC分类号： C23C16/4581 ,  C23C16/16

摘要： A method for processing a substrate on a ceramic substrate heater in a process chamber. The method includes forming a protective coating on the ceramic substrate heater in the process chamber and processing a substrate on the coated substrate heater. The processing can include providing a substrate to be processed on the coated ceramic substrate heater, performing a process on the substrate by exposing the substrate to a process gas, and removing the processed substrate from the process chamber.

摘要翻译： 一种在处理室中的陶瓷基板加热器上处理基板的方法。 该方法包括在处理室中的陶瓷基板加热器上形成保护涂层，并对涂覆的基板加热器上的基板进行处理。 该处理可以包括在被涂覆的陶瓷基板加热器上提供待处理的基板，通过将基板暴露于工艺气体，从处理室中移除经处理的基板，在基板上进行处理。

公开(公告)号：US06846711B2

公开(公告)日：2005-01-25

申请号：US09794046

申请日：2001-02-28

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L27/108 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8242

CPC分类号： H01L21/7687 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76856 ,  H01L27/10855 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  H01L28/90

摘要： A semiconductor device includes an interlevel insulating film, a contact plug, a barrier film, a first electrode, a capacitor insulating file, and a second electrode. The interlevel insulating film is formed on a semiconductor substrate. The contact plug extends through the interlevel insulating film and is formed from a conductive material. The barrier film is formed from a tungsten-based material on the upper surface of the contact plug. The first electrode is connected to the contact plug via the barrier film and formed from a metal material on the interlevel insulating film. The capacitor insulating film is formed from an insulating metal oxide on the first electrode. The second electrode is insulated by the capacitor insulating film and formed on the surface of the first electrode.

摘要翻译： 半导体器件包括层间绝缘膜，接触插塞，阻挡膜，第一电极，电容器绝缘件和第二电极。 层间绝缘膜形成在半导体基板上。 接触插塞延伸穿过层间绝缘膜，并由导电材料形成。 阻挡膜由接触塞的上表面上的钨基材料形成。 第一电极通过阻挡膜连接到接触塞，并由层间绝缘膜上的金属材料形成。 电容绝缘膜由第一电极上的绝缘金属氧化物形成。 第二电极被电容器绝缘膜绝缘并形成在第一电极的表面上。

公开(公告)号：US06548112B1

公开(公告)日：2003-04-15

申请号：US09442930

申请日：1999-11-18

申请人： Joseph T. Hillman ,  Tugrul Yasar ,  Kenichi Kubo ,  Vincent Vezin ,  Hideaki Yamasaki ,  Yasuhiko Kojima ,  Yumiko Kawano ,  Hideki Yoshikawa

发明人： Joseph T. Hillman ,  Tugrul Yasar ,  Kenichi Kubo ,  Vincent Vezin ,  Hideaki Yamasaki ,  Yasuhiko Kojima ,  Yumiko Kawano ,  Hideki Yoshikawa

IPC分类号： C23C1618

CPC分类号： C23C16/4486

摘要： A CVD reactor is provided with a precursor delivery system that is integrally connected to the reactor chamber. Liquid precursor such as a copper or other metal-organic precursor is atomized at the entry of a high flow-conductance vaporizer, preferably with the assistance of an inert sweep gas. Liquid precursor is maintained, when in an unstable liquid state, at or below room temperature. In the vaporizer, heat is introduced to uniformly heat the atomized precursor. The vaporized precursor is passed into a diffuser which diffuses the vapor, either directly or through a showerhead, into the reaction chamber.

摘要翻译： CVD反应器设置有与反应器室一体地连接的前体输送系统。 优选在惰性吹扫气体的帮助下，诸如铜或其它金属 - 有机前体的液体前体在高流量蒸发器的入口处被雾化。 当处于不稳定的液体状态时，液体前体保持在室温或室温以下。 在蒸发器中，引入热量以均匀加热雾化的前体。 蒸发的前体进入扩散器，其将蒸气直接或通过喷头扩散到反应室中。

公开(公告)号：US06399484B1

公开(公告)日：2002-06-04

申请号：US09425971

申请日：1999-10-25

申请人： Hideaki Yamasaki ,  Satoshi Yonezawa ,  Susumu Arima ,  Yumiko Kawano ,  Mitsuhiro Tachibana ,  Keizo Hosoda

发明人： Hideaki Yamasaki ,  Satoshi Yonezawa ,  Susumu Arima ,  Yumiko Kawano ,  Mitsuhiro Tachibana ,  Keizo Hosoda

IPC分类号： H01L214763

CPC分类号： C23C16/45565 ,  C23C16/0281 ,  C23C16/34 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/4557 ,  C23C16/45574 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32051

摘要： A semiconductor device fabricating method includes a preparatory process that brings a first source gas containing tungsten atoms into contact with a workpiece and that does not bring a second source gas containing nitrogen atoms into contact with the workpiece, and a film forming process that forms a tungsten nitride film on the workpiece by using the first and the second source gases so as to fabricate a semiconductor device. The semiconductor device fabricating method is capable of preventing the tungsten nitride film from peeling off from a layer underlying the same when the tungsten nitride film is subjected to heat treatment.

摘要翻译： 一种半导体器件制造方法，包括使含有钨原子的第一源气体与工件接触并且不会使含有氮原子的第二源气体与工件接触的制备方法，以及形成钨 通过使用第一和第二源气体在工件上形成氮化物膜，以制造半导体器件。 当氮化钨膜进行热处理时，半导体器件制造方法能够防止氮化钨膜从其下面的层剥离。

公开(公告)号：US5637534A

公开(公告)日：1997-06-10

申请号：US172717

申请日：1993-12-27

申请人： Nobuyuki Takeyasu ,  Hiroshi Yamamoto ,  Yumiko Kawano ,  Eiichi Kondoh ,  Tomoharu Katagiri ,  Tomohiro Ohta

发明人： Nobuyuki Takeyasu ,  Hiroshi Yamamoto ,  Yumiko Kawano ,  Eiichi Kondoh ,  Tomoharu Katagiri ,  Tomohiro Ohta

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/44

CPC分类号： H01L23/53223 ,  H01L21/76802 ,  H01L21/76879 ,  H01L23/5226 ,  H01L2924/0002

摘要： A semiconductor device has a multilayered structure that includes an insulating interlayer formed on a lower wiring layer, a semiconductor substrate, and a via hole. The semiconductor device is manufactured by a method that includes plasma etching at least one surface of the insulating interlayer the in an atmosphere having as a major component either a carbonless, chlorine-based gas or a carbonless, chlorine-based gas and an inactive gas in order to remove contaminates that would otherwise promote reactivity with aluminum CVD on the surface of the insulating interlayer.

摘要翻译： 半导体器件具有多层结构，其包括形成在下布线层，半导体衬底和通孔上的绝缘中间层。 半导体器件通过以下方法制造：包括在作为主要成分的无碳，氯系气体或无碳，氯系气体和惰性气体的气氛中等离子体蚀刻绝缘夹层的至少一个表面 以去除否则将促进绝缘中间层表面上的铝CVD的反应性的污染物。

公开(公告)号：US08372688B2

公开(公告)日：2013-02-12

申请号：US13376749

申请日：2010-06-02

申请人： Yumiko Kawano ,  Susumu Arima

发明人： Yumiko Kawano ,  Susumu Arima

IPC分类号： H01L21/06

CPC分类号： H01L45/06 ,  C23C16/02 ,  C23C16/305 ,  C23C16/4405 ,  H01L45/144 ,  H01L45/1616

摘要： A film-forming method includes a preprocessing step (step 1) wherein the inside of a processing chamber is exposed to a gas containing Cl and/or F in a state having no substrate in the processing chamber, and a step (step 2) wherein a substrate is loaded into the processing chamber after the step 1. Then, in a step 3, a gaseous Ge raw material, a gaseous Sb raw material, and a gaseous Te raw material are introduced into the processing chamber having the substrate loaded therein, and a Ge—Sb—Te film formed of Ge2Sb2Te5 is formed on the substrate by CVD.

摘要翻译： 成膜方法包括在处理室内没有基板的状态下将处理室的内部暴露于含有Cl和/或F的气体的预处理步骤（步骤1）和步骤（步骤2），其中 在步骤1之后将基板装载到处理室中。然后，在步骤3中，将气态Ge原料，气态Sb原料和气态Te原料引入到其中装载有基板的处理室中， 并且通过CVD在基板上形成由Ge 2 Sb 2 Te 5形成的Ge-Sb-Te膜。

公开(公告)号：US20120108005A1

公开(公告)日：2012-05-03

申请号：US13376749

申请日：2010-06-02

申请人： Yumiko Kawano ,  Susumu Arima

发明人： Yumiko Kawano ,  Susumu Arima

IPC分类号： H01L21/06 ,  C23C16/52

CPC分类号： H01L45/06 ,  C23C16/02 ,  C23C16/305 ,  C23C16/4405 ,  H01L45/144 ,  H01L45/1616

摘要： A film-forming method includes a preprocessing step (step 1) wherein the inside of a processing chamber is exposed to a gas containing Cl and/or F in a state having no substrate in the processing chamber, and a step (step 2) wherein a substrate is loaded into the processing chamber after the step 1. Then, in a step 3, a gaseous Ge raw material, a gaseous Sb raw material, and a gaseous Te raw material are introduced into the processing chamber having the substrate loaded therein, and a Ge—Sb—Te film formed of Ge2Sb2Te5 is formed on the substrate by CVD.

摘要翻译： 成膜方法包括在处理室内没有基板的状态下将处理室的内部暴露于含有Cl和/或F的气体的预处理步骤（步骤1）和步骤（步骤2），其中 在步骤1之后将基板装载到处理室中。然后，在步骤3中，将气态Ge原料，气态Sb原料和气态Te原料引入到其中装载有基板的处理室中， 并且通过CVD在基板上形成由Ge 2 Sb 2 Te 5形成的Ge-Sb-Te膜。

公开(公告)号：US20090291549A1

公开(公告)日：2009-11-26

申请号：US12097418

申请日：2006-11-24

申请人： Hideaki Yamasaki ,  Koji Akiyama ,  Kazuyoshi Yamazaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Koji Akiyama ,  Kazuyoshi Yamazaki ,  Yumiko Kawano

IPC分类号： H01L21/26 ,  H01L21/28

CPC分类号： C23C16/16 ,  C23C8/16 ,  C23C8/36 ,  C23C16/56 ,  H01L21/28079 ,  H01L21/28176 ,  H01L29/495 ,  H01L29/517

摘要： On a Si substrate 1, i.e., a semiconductor substrate, a gate insulating film 2 is formed, and then a W-based film 3a is formed on the gate insulating film 2 by CVD using a film forming gas including W(CO)6 gas. Then, the film is oxidized under existence of a reducing gas, and the W in the W-based film 3a is not oxidized but only C is selectively oxidized to reduce the concentration of C contained in the W-based film 3a. Then, after performing heat treatment as needed, resist coating, patterning, etching and the like are performed, and, an impurity diffused region 10 is formed by ion implantation and the like, and a semiconductor device having a MOS structure is formed.

摘要翻译： 在Si衬底1即半导体衬底上形成栅极绝缘膜2，然后通过CVD使用包含W（CO）6气体的成膜气体在栅极绝缘膜2上形成W基膜3a 。 然后，在存在还原气体的情况下，膜被氧化，W基膜3a中的W不被氧化，只有选择性地氧化C以降低W基膜3a中所含的C浓度。 然后，根据需要进行热处理后，进行抗蚀剂涂布，图案化，蚀刻等，通过离子注入等形成杂质扩散区域10，形成具有MOS结构的半导体器件。

公开(公告)号：US07582544B2

公开(公告)日：2009-09-01

申请号：US11608504

申请日：2006-12-08

申请人： Isao Gunji ,  Yumiko Kawano

发明人： Isao Gunji ,  Yumiko Kawano

IPC分类号： H01L21/36

CPC分类号： H01L21/28562 ,  C23C16/16 ,  C23C16/18 ,  C23C16/34 ,  C23C16/452 ,  C23C16/45534 ,  C23C16/45548 ,  C23C16/45557 ,  C23C16/46

摘要： A film forming method, for depositing a thin film on a surface of a substrate mounted on a mounting table disposed in a vacuum processing chamber, includes an adsorption process for adsorbing a film forming material on the substrate by introducing a source gas into the processing chamber; and a reaction process for carrying out a film forming reaction, after the adsorption process, by introducing an energy transfer gas into the processing chamber and supplying thermal energy to the film forming material adsorbed on the substrate. By repeating the above process, the thin film is formed on the substrate in a layer-by-layer manner.

摘要翻译： 一种薄膜形成方法，用于在安装在设置在真空处理室中的安装台上的基板的表面上沉积薄膜，包括通过将源气体引入处理室中而将成膜材料吸附在基板上的吸附工艺 ; 以及在吸附过程之后，通过将能量转移气体引入处理室并向吸附在基板上的成膜材料提供热能的反应方法进行成膜反应。 通过重复上述处理，薄膜以层叠的方式形成在基板上。