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    Method for forming fin structures for non-planar semiconductor device
    45.
    发明授权
    Method for forming fin structures for non-planar semiconductor device 有权

    公开(公告)号：US09786502B2

    公开(公告)日：2017-10-10

    申请号：US15067157

    申请日：2016-03-10

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Kuan-Hsien Li ,  Rai-Min Huang ,  I-Ming Tseng ,  Wen-An Liang ,  Chen-Ming Huang

    IPC: H01L21/033 ,  H01L21/8234

    CPC classification number: H01L21/0337 ,  H01L21/823431 ,  H01L21/845 ,  H01L29/6681

    Abstract: A method for forming fin structure includes following steps. A substrate is provided. A first mandrel and a plurality of second mandrels are formed on the substrate simultaneously. A plurality of spacers are respectively formed on sidewalls of the first mandrel and the second mandrels and followed by removing the first mandrel and the second mandrels to form a first spacer pattern and a plurality of second spacer patterns. Then the substrate is etched to simultaneously form at least a first fin and a plurality of second fins on the substrate with the first spacer pattern and the second spacer patterns serving as an etching mask. At least one of the second fins is immediately next to the first fin, and a fin width of the first fin is larger than a fin width of the second fins. Then, the second fins are removed from the substrate.

    METHOD FOR FORMING FIN STRUCTURES FOR NON-PLANAR SEMICONDUCTOR DEVICE
    46.
    发明申请
    METHOD FOR FORMING FIN STRUCTURES FOR NON-PLANAR SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20170263454A1

    公开(公告)日：2017-09-14

    申请号：US15067157

    申请日：2016-03-10

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Kuan-Hsien Li ,  Rai-Min Huang ,  I-Ming Tseng ,  Wen-An Liang ,  Chen-Ming Huang

    IPC: H01L21/033 ,  H01L21/8234

    CPC classification number: H01L21/0337 ,  H01L21/823431 ,  H01L21/845 ,  H01L29/6681

    Abstract: A method for forming fin structure includes following steps. A substrate is provided. A first mandrel and a plurality of second mandrels are formed on the substrate simultaneously. A plurality of spacers are respectively formed on sidewalls of the first mandrel and the second mandrels and followed by removing the first mandrel and the second mandrels to form a first spacer pattern and a plurality of second spacer patterns. Then the substrate is etched to simultaneously form at least a first fin and a plurality of second fins on the substrate with the first spacer pattern and the second spacer patterns serving as an etching mask. At least one of the second fins is immediately next to the first fin, and a fin width of the first fin is larger than a fin width of the second fins. Then, the second fins are removed from the substrate.

    Fin shaped structure and method of forming the same
    49.
    发明授权
    Fin shaped structure and method of forming the same 有权
    翅形结构及其形成方法

    公开(公告)号：US09466691B2

    公开(公告)日：2016-10-11

    申请号：US14541107

    申请日：2014-11-13

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： I-Ming Tseng ,  Rai-Min Huang ,  Tong-Jyun Huang ,  Kuan-Hsien Li ,  Chen-Ming Huang

    IPC: H01L21/336 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L21/265

    CPC classification number: H01L29/66537 ,  H01L21/26586 ,  H01L29/1041 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/785 ,  H01L29/7851

    Abstract: A fin shaped structure and a method of forming the same, wherein the method includes forming a fin structure on a substrate. Next, an insulation layer is formed on the substrate and surrounds the fin structure, wherein the insulation layer covers a bottom portion of the fin structure to expose an exposed portion of the fin structure protruded from the insulation layer. Then, a buffer layer is formed on the fin structure. Following this, a threshold voltage implantation process is performed to penetrate through the buffer layer after forming the insulation layer, to form a first doped region on the exposed portion of the fin structure.

    Abstract translation: 鳍状结构及其形成方法，其中，所述方法包括在基板上形成翅片结构。 接下来，在衬底上形成绝缘层并围绕鳍结构，其中绝缘层覆盖翅片结构的底部以暴露从绝缘层突出的鳍结构的暴露部分。 然后，在翅片结构上形成缓冲层。 接下来，在形成绝缘层之后，执行阈值电压注入工艺以穿透缓冲层，以在鳍结构的暴露部分上形成第一掺杂区域。

    FIN SHAPED STRUCTURE AND METHOD OF FORMING THE SAME
    50.
    发明申请
    FIN SHAPED STRUCTURE AND METHOD OF FORMING THE SAME 有权
    FIN形状结构及其形成方法

    公开(公告)号：US20160141387A1

    公开(公告)日：2016-05-19

    申请号：US14541107

    申请日：2014-11-13

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： I-Ming Tseng ,  Rai-Min Huang ,  Tong-Jyun Huang ,  Kuan-Hsien Li ,  Chen-Ming Huang

    IPC: H01L29/66 ,  H01L21/265 ,  H01L29/06 ,  H01L21/308 ,  H01L29/10 ,  H01L21/311 ,  H01L29/78 ,  H01L21/02

    CPC classification number: H01L29/66537 ,  H01L21/26586 ,  H01L29/1041 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/785 ,  H01L29/7851

    Abstract: A fin shaped structure and a method of forming the same, wherein the method includes forming a fin structure on a substrate. Next, an insulation layer is formed on the substrate and surrounds the fin structure, wherein the insulation layer covers a bottom portion of the fin structure to expose an exposed portion of the fin structure protruded from the insulation layer. Then, a buffer layer is formed on the fin structure. Following this, a threshold voltage implantation process is performed to penetrate through the buffer layer after forming the insulation layer, to form a first doped region on the exposed portion of the fin structure.

    Abstract translation: 鳍状结构及其形成方法，其中，所述方法包括在基板上形成翅片结构。 接下来，在衬底上形成绝缘层并围绕鳍结构，其中绝缘层覆盖翅片结构的底部以暴露从绝缘层突出的鳍结构的暴露部分。 然后，在翅片结构上形成缓冲层。 接下来，在形成绝缘层之后，执行阈值电压注入工艺以穿透缓冲层，以在鳍结构的暴露部分上形成第一掺杂区域。

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