公开(公告)号：US08357558B2

公开(公告)日：2013-01-22

申请号：US12837248

申请日：2010-07-15

申请人： Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

发明人： Takashi Kyono ,  Yohei Enya ,  Yusuke Yoshizumi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Masahiro Adachi ,  Shinji Tokuyama

IPC分类号： H01L21/00

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01L33/0075 ,  H01L33/16 ,  H01S5/0014 ,  H01S5/34333

摘要： A method of making a semiconductor light-emitting device involves the steps of selecting at least one tilt angle for a primary surface of a substrate to evaluate the direction of piezoelectric polarization in a light-emitting layer, the substrate comprising a group III nitride semiconductor; preparing a substrate having the primary surface, the primary surface having the selected tilt angle, and the primary surface comprising the group III nitride semiconductor; forming a quantum well structure and p- and n-type gallium nitride semiconductor layers for the light-emitting layer at the selected tilt angle to prepare a substrate product; measuring photoluminescence of the substrate product while applying a bias to the substrate product, to determine bias dependence of the photoluminescence; evaluating the direction of the piezoelectric polarization in the light-emitting layer at the selected tilt angle on the primary surface of the substrate by the determined bias dependence; determining which of the primary surface or the back surface of the substrate is to be used, based on the evaluation to select a plane orientation of a growth substrate for making the semiconductor light-emitting device; and forming a semiconductor laminate for the semiconductor light-emitting device on the primary surface of the growth substrate. The tilt angle is defined by the primary surface of the substrate and the (0001) plane of the group III nitride semiconductor. Each of the well layer and the barrier layer of the light-emitting layer extends along a reference plane tilting from a plane perpendicular to a reference axis extending along the c-axis of the group III nitride semiconductor.

摘要翻译： 制造半导体发光器件的方法包括以下步骤：为衬底的主表面选择至少一个倾斜角以评估发光层中的压电极化的方向，所述衬底包括III族氮化物半导体; 制备具有主表面的基底，所述主表面具有所选择的倾斜角，并且所述主表面包含III族氮化物半导体; 以选定的倾斜角形成量子阱结构和用于发光层的p型和n型氮化镓半导体层以制备衬底产品; 测量衬底产物的光致发光，同时向衬底产物施加偏压，以确定光致发光的偏差依赖性; 以所确定的偏置依赖性，以所选择的倾斜角在所述基板的主表面上评估所述发光层中的所述压电极化的方向; 基于选择用于制造半导体发光器件的生长衬底的平面取向的评估，确定要使用衬底的主表面或背表面中的哪一个; 以及在所述生长衬底的主表面上形成用于所述半导体发光器件的半导体层压体。 倾斜角由衬底的主表面和III族氮化物半导体的（0001）面限定。 发光层的阱层和阻挡层中的每一个沿着从垂直于沿着III族氮化物半导体的c轴延伸的参考轴的平面倾斜的参考平面延伸。

公开(公告)号：US20120258557A1

公开(公告)日：2012-10-11

申请号：US13443480

申请日：2012-04-10

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Nobuhiro Saga ,  Masahiro Adachi ,  Kazuhide Sumiyoshi ,  Shinji Tokuyama ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Nobuhiro Saga ,  Masahiro Adachi ,  Kazuhide Sumiyoshi ,  Shinji Tokuyama ,  Shimpei Takagi ,  Takatoshi Ikegami ,  Masaki Ueno ,  Koji Katayama

IPC分类号： H01L33/62

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202

摘要： A III-nitride semiconductor laser device is provided with a laser structure and an electrode. The laser structure includes a support base which includes a hexagonal III-nitride semiconductor and a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface. The electrode is provided on the semiconductor region. The semiconductor region includes a first cladding layer of a first conductivity type GaN-based semiconductor, a second cladding layer of a second conductivity type GaN-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer.

摘要翻译： III族氮化物半导体激光器件具有激光结构和电极。 激光器结构包括支撑基底，其包括六边形III族氮化物半导体和半极性主表面，以及设置在半极性主表面上的半导体区域。 电极设置在半导体区域上。 半导体区域包括第一导电型GaN基半导体的第一包层，第二导电型GaN基半导体的第二包层和设置在第一包层和第二包层之间的有源层。

公开(公告)号：US08227277B2

公开(公告)日：2012-07-24

申请号：US13277806

申请日：2011-10-20

申请人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

发明人： Yusuke Yoshizumi ,  Yohei Enya ,  Takashi Kyono ,  Masahiro Adachi ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Shinji Tokuyama ,  Koji Katayama ,  Takao Nakamura ,  Takatoshi Ikegami

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01S5/0014 ,  H01S5/0021 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211

摘要： A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.

摘要翻译： 制备III族氮化物半导体激光器件的方法包括：制备六方晶III族氮化物半导体的衬底，其中衬底具有半极性主表面; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括所述基板和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在六方晶III族氮化物半导体的a轴的方向上划分基板产品的第一表面; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

公开(公告)号：US08207556B2

公开(公告)日：2012-06-26

申请号：US13243516

申请日：2011-09-23

申请人： Takashi Kyono ,  Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Takao Nakamura

发明人： Takashi Kyono ,  Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Takao Nakamura

IPC分类号： H01L29/24 ,  H01L33/00 ,  H01L29/06 ,  H01L29/12 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/22 ,  H01L29/732 ,  H01L29/739

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device includes a group III nitride semiconductor supporting base, a GaN based semiconductor region, an active layer, and a GaN semiconductor region. The primary surface of the group III nitride semiconductor supporting base is not any polar plane, and forms a finite angle with a reference plane that is orthogonal to a reference axis extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region, grown on the semipolar primary surface, includes a semiconductor layer of, for example, an n-type GaN based semiconductor doped with silicon. A GaN based semiconductor layer of an oxygen concentration of 5×1016 cm−3 or more provides an active layer, grown on the primary surface, with an excellent crystal quality.

摘要翻译： 提供具有优异表面形态的具有氮化镓基半导体膜的III族氮化物半导体器件。 III族氮化物光半导体器件包括III族氮化物半导体支撑基底，GaN基半导体区域，有源层和GaN半导体区域。 III族氮化物半导体支撑基体的主表面不是任何极性平面，并且与与在III族氮化物半导体的c轴方向上延伸的参考轴正交的参考平面形成有限角度。 在半极性主表面上生长的GaN基半导体区域包括例如掺杂有硅的n型GaN基半导体的半导体层。 氧浓度为5×1016cm-3以上的GaN系半导体层能够提供在主表面生长的活性层，其结晶质量优异。

公开(公告)号：US08183596B2

公开(公告)日：2012-05-22

申请号：US12846311

申请日：2010-07-29

申请人： Masaki Ueno ,  Takashi Kyono ,  Yohei Enya ,  Takamichi Sumitomo ,  Yusuke Yoshizumi

发明人： Masaki Ueno ,  Takashi Kyono ,  Yohei Enya ,  Takamichi Sumitomo ,  Yusuke Yoshizumi

IPC分类号： H01L21/02 ,  H01L21/338 ,  H01L31/06

CPC分类号： H01L29/7781 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783

摘要： A high electron mobility transistor includes a free-standing supporting base having a III nitride region, a first III nitride barrier layer which is provided on the first III nitride barrier layer, a III nitride channel layer which is provided on the first III nitride barrier layer and forms a first heterojunction with the first III nitride barrier layer, a gate electrode provided on the III nitride channel layer so as to exert an electric field on the first heterojunction, a source electrode on the III nitride channel layer and the first III nitride barrier, and a drain electrode on the III nitride channel layer and the first III nitride barrier. The III nitride channel layer has compressive internal strain, and the piezoelectric field of the III nitride channel layer is oriented in the direction from the supporting base towards the first III nitride barrier layer. The first heterojunction extends along a plane having a normal axis that is inclined at an inclination angle in the range of 40 degrees to 85 degrees or 140 degrees to 180 degrees with respect to the c-axis of the III nitride region.

摘要翻译： 高电子迁移率晶体管包括具有III族氮化物区域的独立支撑基底，设置在第一III族氮化物阻挡层上的第一III族氮化物阻挡层，设置在第一III族氮化物阻挡层上的III族氮化物沟道层 并与第一III族氮化物阻挡层形成第一异质结，设置在III族氮化物沟道层上以在第一异质结上施加电场的栅电极，III族氮化物沟道层上的源极和第一III族氮化物势垒 ，以及在III族氮化物沟道层和第一III族氮化物屏障上的漏电极。 III族氮化物沟道层具有压缩内部应变，并且III族氮化物沟道层的压电场在从支撑基底朝向第一III族氮化物阻挡层的方向上取向。 第一异质结沿着具有相对于III族氮化物区域的c轴以40度至85度或140度至180度的范围内倾斜的倾斜角的平面延伸。

公开(公告)号：US08053806B2

公开(公告)日：2011-11-08

申请号：US12940879

申请日：2010-11-05

申请人： Takashi Kyono ,  Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Takao Nakamura

发明人： Takashi Kyono ,  Yusuke Yoshizumi ,  Yohei Enya ,  Katsushi Akita ,  Masaki Ueno ,  Takamichi Sumitomo ,  Takao Nakamura

IPC分类号： H01L29/24 ,  H01L33/00 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L29/22

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32 ,  H01S5/305 ,  H01S5/3086 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 11a includes a group III nitride semiconductor supporting base 13, a GaN based semiconductor region 15, an active layer active layer 17, and a GaN semiconductor region 19. The primary surface 13a of the group III nitride semiconductor supporting base 13 is not any polar plane, and forms a finite angle with a reference plane Sc that is orthogonal to a reference axis Cx extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region 15 is grown on the semipolar primary surface 13a. A GaN based semiconductor layer 21 of the GaN based semiconductor region 15 is, for example, an n-type GaN based semiconductor, and the n-type GaN based semiconductor is doped with silicon. A GaN based semiconductor layer 23 of an oxygen concentration of 5×1016 cm−3 or more provides an active layer 17 with an excellent crystal quality, and the active layer 17 is grown on the primary surface of the GaN based semiconductor layer 23.

摘要翻译： 提供具有优异表面形态的具有氮化镓基半导体膜的III族氮化物半导体器件。 III族氮化物光半导体器件11a包括III族氮化物半导体支撑基底13，GaN基半导体区域15，有源层有源层17和GaN半导体区域19.第III族氮化物半导体支撑基底13的主表面13a 基座13不是任何极性平面，并且与参考平面Sc形成有限的角度，该参考平面Sc与在III族氮化物半导体的c轴方向上延伸的基准轴Cx正交。 在半极性主表面13a上生长GaN基半导体区域15。 GaN系半导体区域15的GaN系半导体层21例如为n型GaN系半导体，n型GaN系半导体掺杂有硅。 氧浓度为5×1016cm-3以上的GaN系半导体层23提供具有优异晶体质量的有源层17，并且在GaN基半导体层23的主表面上生长有源层17。

公开(公告)号：US07955881B2

公开(公告)日：2011-06-07

申请号：US12500074

申请日：2009-07-09

申请人： Katsushi Akita ,  Takamichi Sumitomo ,  Yohei Enya ,  Takashi Kyono ,  Masaki Ueno

发明人： Katsushi Akita ,  Takamichi Sumitomo ,  Yohei Enya ,  Takashi Kyono ,  Masaki Ueno

IPC分类号： H01L21/00

CPC分类号： H01L21/0262 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06

摘要： In the method of fabricating a quantum well structure which includes a well layer and a barrier layer, the well layer is grown at a first temperature on a sapphire substrate. The well layer comprises a group III nitride semiconductor which contains indium as a constituent. An intermediate layer is grown on the InGaN well layer while monotonically increasing the sapphire substrate temperature from the first temperature. The group III nitride semiconductor of the intermediate layer has a band gap energy larger than the band gap energy of the InGaN well layer, and a thickness of the intermediate layer is greater than 1 nm and less than 3 nm in thickness. The barrier layer is grown on the intermediate layer at a second temperature higher than the first temperature. The barrier layer comprising a group III nitride semiconductor and the group III nitride semiconductor of the barrier layer has a band gap energy larger than the band gap energy of the well layer.

摘要翻译： 在制造包括阱层和势垒层的量子阱结构的方法中，阱层在蓝宝石衬底的第一温度下生长。 阱层包含含有铟作为成分的III族氮化物半导体。 在InGaN阱层上生长中间层，同时使蓝宝石衬底温度从第一温度单调增加。 中间层的III族氮化物半导体的带隙能量大于InGaN阱层的带隙能量，中间层的厚度大于1nm且小于3nm。 阻挡层在高于第一温度的第二温度下在中间层上生长。 包含III族氮化物半导体的阻挡层和势垒层的III族氮化物半导体的带隙能量大于阱层的带隙能量。

公开(公告)号：US08476615B2

公开(公告)日：2013-07-02

申请号：US13295840

申请日：2011-11-14

申请人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

发明人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L29/06

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/34333

摘要： A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial region 15, an active layer 17, an electron blocking layer 27, and a contact layer 29. The active layer 17 is composed of a GaN-based semiconductor containing indium. The substrate 13 has a dislocation density of 1×107 cm−2 or less. In the GaN-based semiconductor light emitting device 11a provided with the active layer containing indium, a decrease in quantum efficiency under high current injection can be moderated.

摘要翻译： GaN基半导体发光器件11a包括由GaN基半导体构成的衬底13，该GaN基半导体具有从c面朝向m轴倾斜角度α大于或等于63度的主表面13a;以及 低于80度的GaN基半导体外延区域15，有源层17，电子阻挡层27和接触层29.有源层17由包含铟的GaN基半导体构成。 基板13的位错密度为1×10 7 cm -2以下。 在具有含有铟的有源层的GaN系半导体发光元件11a中，能够缓和高电流注入时的量子效率的降低。

公开(公告)号：US20120061643A1

公开(公告)日：2012-03-15

申请号：US13295840

申请日：2011-11-14

申请人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

发明人： Yohei Enya ,  Takashi Kyono ,  Takamichi Sumitomo ,  Katsushi Akita ,  Masaki Ueno ,  Takao Nakamura

IPC分类号： H01L33/04 ,  H01L33/32

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3403 ,  H01S5/34333

摘要： A GaN-based semiconductor light emitting device 11a includes a substrate 13 composed of a GaN-based semiconductor having a primary surface 13a tilting from the c-plane toward the m-axis at a tilt angle α of more than or equal to 63 degrees and less than 80 degrees, a GaN-based semiconductor epitaxial region 15, an active layer 17, an electron blocking layer 27, and a contact layer 29. The active layer 17 is composed of a GaN-based semiconductor containing indium. The substrate 13 has a dislocation density of 1×107 cm−2 or less. In the GaN-based semiconductor light emitting device 11a provided with the active layer containing indium, a decrease in quantum efficiency under high current injection can be moderated.

摘要翻译： GaN基半导体发光器件11a包括由具有从c面朝向m轴倾斜角度大于或等于63度的主表面13a的GaN基半导体构成的衬底13， 低于80度的GaN基半导体外延区域15，有源层17，电子阻挡层27和接触层29.有源层17由包含铟的GaN基半导体构成。 基板13的位错密度为1×10 7 cm -2以下。 在具有含有铟的有源层的GaN系半导体发光元件11a中，能够缓和高电流注入时的量子效率的降低。

公开(公告)号：US20110175201A1

公开(公告)日：2011-07-21

申请号：US12834977

申请日：2010-07-13

申请人： Shinji Tokuyama ,  Masaki Ueno ,  Masahiro Adachi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Koji Katayama ,  Yoshihiro Saito

发明人： Shinji Tokuyama ,  Masaki Ueno ,  Masahiro Adachi ,  Takashi Kyono ,  Takamichi Sumitomo ,  Koji Katayama ,  Yoshihiro Saito

IPC分类号： H01L29/20

CPC分类号： H01L21/28575 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40

摘要： A Group III nitride semiconductor device has a semiconductor region, a metal electrode, and a transition layer. The semiconductor region has a surface comprised of a Group III nitride crystal. The semiconductor region is doped with a p-type dopant. The surface is one of a semipolar surface and a nonpolar surface. The metal electrode is provided on the surface. The transition layer is formed between the Group III nitride crystal of the semiconductor region and the metal electrode. The transition layer is made by interdiffusion of a metal of the metal electrode and a Group III nitride of the semiconductor region.

摘要翻译： III族氮化物半导体器件具有半导体区域，金属电极和过渡层。 半导体区具有由III族氮化物晶体组成的表面。 半导体区域掺杂有p型掺杂剂。 表面是半极性表面和非极性表面之一。 金属电极设置在表面上。 在半导体区域的III族氮化物晶体和金属电极之间形成过渡层。 过渡层是通过金属电极的金属和半导体区域的III族氮化物的相互扩散而制成的。