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公开(公告)号：US5426340A
公开(公告)日：1995-06-20
申请号：US188536
申请日：1994-01-27
CPC分类号： H03H9/02582
摘要： A surface acoustic wave device includes a hard layer comprising diamond or a diamond-like carbon film, and a piezoelectric layer formed on the hard layer. It further includes a paired interdigital transducer and grounding electrode, which perform an electro-mechanical conversion, with the piezoelectric layer arranged therebetween. Then, the feature of the present invention is to form the grounding electrode of a conductive oxide. It is preferred that the conductive oxide is formed by doping an impurity into a piezoelectric material of ZnO. Therefore, the adhesion between the piezoelectric layer and the hard layer, and the grounding electrodes is increased, so that the device yield is enhanced, and a high electromechanical coupling coefficient can be achieved in a high frequency range.
摘要翻译： 表面声波装置包括由金刚石或类金刚石碳膜构成的硬质层和形成在硬质层上的压电层。 它还包括一个成对的叉指式换能器和接地电极，它们进行机电转换，压电层位于它们之间。 然后，本发明的特征在于形成导电氧化物的接地电极。 优选的是，通过将杂质掺杂到ZnO的压电材料中形成导电氧化物。 因此，压电层与硬质层和接地电极之间的粘附性增加，从而提高了器件成品率，并且可以在高频范围内实现高的机电耦合系数。
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公开(公告)号：US5401544A
公开(公告)日：1995-03-28
申请号：US109394
申请日：1993-08-19
CPC分类号： H03H3/08 , H03H9/14538
摘要： A surface acoustic wave device which can operate at a higher frequency range is produced by irradiation with a focused ion beam to produce a narrower electrode width and narrower spacing width between neighboring electrodes in contact with a piezoelectric body, without degrading the reliability of the device. The surface acoustic wave device includes a piezoelectric body 3 and interdigital electrodes 2a and 2b in close contact with the piezoelectric body 3 and formed by using the focused ion beam. In order to increase the frequency of the device, the piezoelectric body 3 may be formed on a substrate 1, for example of diamond.
摘要翻译： 可以通过用聚焦离子束照射来产生能够在较高频率范围内工作的表面声波装置，以产生与压电体接触的相邻电极之间的较窄的电极宽度和较窄的间隔宽度，而不会降低装置的可靠性。 表面声波装置包括与压电体3紧密接触并通过使用聚焦离子束形成的压电体3和叉指电极2a和2b。 为了增加器件的频率，压电体3可以形成在例如金刚石的衬底1上。
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公开(公告)号：US5382809A
公开(公告)日：1995-01-17
申请号：US118940
申请日：1993-09-09
IPC分类号： H01L21/04 , H01L21/205 , H01L29/808 , H01L29/78 , H01L29/16 , H01L29/167
CPC分类号： H01L29/808 , H01L21/02376 , H01L21/02381 , H01L21/02527 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/0415 , H01L29/66045
摘要： A semiconductor device having an MISFET-like structure. The semiconductor device comprises: an p-type semiconductor diamond layer disposed on an insulating diamond substrate for providing a channel region; and a drain electrode, a source electrode and a gate electrode disposed on the p-type diamond layer. An intermediate region comprising diamond doped with at least an n-type dopant such as nitrogen atoms, is formed between the channel region and the gate electrode.
摘要翻译： 具有MISFET类结构的半导体器件。 半导体器件包括：p型半导体金刚石层，设置在绝缘金刚石衬底上，用于提供沟道区; 以及设置在p型金刚石层上的漏电极，源电极和栅电极。 在沟道区域和栅电极之间形成包括掺杂有至少n型掺杂剂如氮原子的金刚石的中间区域。
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公开(公告)号：US5320865A
公开(公告)日：1994-06-14
申请号：US947283
申请日：1992-09-16
CPC分类号： H03H3/08 , H03H9/02582 , Y10T29/42
摘要： A method of manufacturing a surface acoustic wave device which has a smaller insertion loss and which operates at higher frequency than a conventional surface acoustic wave device is provided. The surface acoustic wave device includes a substrate, a diamond layer formed on the substrate, a piezoelectric layer formed on the diamond layer, and electrodes formed on any of the substrate, the diamond layer and the piezoelectric layer. The piezoelectric layer is formed by the laser ablation method. The insertion loss of this acoustic wave device is small even in a high frequency range of several hundreds MHz to GHz. Therefore, the device can be used as a frequency filter, a resonator, a delay line, a convolver, a correlator and the like.
摘要翻译： 提供一种制造具有较小的插入损耗并且以比常规的声表面波器件更高的频率工作的声表面波器件的方法。 表面声波装置包括基板，形成在基板上的金刚石层，形成在金刚石层上的压电层，以及形成在基板，金刚石层和压电层之一上的电极。 压电层通过激光烧蚀法形成。 即使在几百MHz至GHz的高频范围内，该声波器件的插入损耗也很小。 因此，该装置可以用作频率滤波器，谐振器，延迟线，卷积器，相关器等。
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公开(公告)号：US5264379A
公开(公告)日：1993-11-23
申请号：US20461
申请日：1993-02-22
申请人： Shinichi Shikata
发明人： Shinichi Shikata
IPC分类号： H01L21/314 , H01L21/318 , H01L21/331 , H01L23/29 , H01L29/737 , H01L21/265
CPC分类号： H01L29/66318 , H01L21/314 , H01L21/3185 , H01L23/29 , H01L29/7371 , H01L2924/0002 , Y10S148/011 , Y10S148/064 , Y10S148/072
摘要： A method of manufacturing a heterojunction bipolar transistor is disclosed. On a base layer of a first semiconductor which contains at least one of gallium and arsenic as a constituent element, an emitter layer of a second semiconductor is formed which contains as a constituent element at least one of gallium and arsenic and which has a band gap larger that of the first semiconductor. Predetermined regions of the emitter layer and an upper portion of the base layer are removed to form a mesa structure. Then, a surface of a junction region of the base layer and the emitter layer of the formed mesa structure is treated using a phosphate etchant and a sulfur or sulfide passivating agent. After the surface treatment, the surface of the junction is covered with an insulating film.
摘要翻译： 公开了一种制造异质结双极晶体管的方法。 在包含镓和砷中的至少一种作为构成元素的第一半导体的基底层上，形成第二半导体的发射极层，其包含作为镓和砷中的至少一种的构成元素，并且具有带隙 大于第一半导体。 除去发射极层的预定区域和基底层的上部以形成台面结构。 然后，使用磷酸盐蚀刻剂和硫或硫化物钝化剂处理基底层的接合区域的表面和形成的台面结构的发射极层的表面。 表面处理后，接合面的表面被绝缘膜覆盖。
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公开(公告)号：US5252553A
公开(公告)日：1993-10-12
申请号：US885848
申请日：1992-05-20
CPC分类号： H01L39/2461 , Y10S505/731 , Y10S505/732 , Y10S505/736
摘要： In order to prepare a good quality crystalline thin film of compound oxide superconductor on a silicon wafer, before the thin film of compound oxide superconductor is deposited on the silicon wafer, the silicon wafer is first heated at a temperature of higher than 900.degree. C. in a high vacuum of less than 10.sup.-6 Torr, then, a thin film of ZrO.sub.2 is deposited on the silicon wafer, and finally, the thin film of ZrO.sub.2 deposited on the silicon wafer is annealed in air at a temperature of 800.degree. to 850.degree. C.
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公开(公告)号：US5235236A
公开(公告)日：1993-08-10
申请号：US937983
申请日：1992-08-28
CPC分类号： H03H3/08 , H03H9/02582 , H03H9/02976
摘要： Disclosed herein is a surface acoustic wave device whose characteristics can be stably maintained against temperature changes. The surface acoustic wave device has an insulating diamond layer (2), which is provided thereon with a part (3) defined by a pair of interdigital electrodes (7, 7') and a piezoelectric layer (8), and a thermistor (4) made of semi-conductive diamond. The thermistor (4) quickly detects the temperature of the device.
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公开(公告)号：US4772489A
公开(公告)日：1988-09-20
申请号：US909266
申请日：1986-09-19
申请人： Shinichi Shikata
发明人： Shinichi Shikata
IPC分类号： H01L21/314 , H01L21/316 , H01L21/318 , H01L21/324
CPC分类号： H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/3145 , H01L21/31608 , H01L21/3185 , H01L21/3245
摘要： An annealing method for activating ion-implanted layers of a compound semiconductor substrate which comprises a step of converting gas containing prescribed components into plasma through an electron cyclotron resonance process and making the same read with a reactive gas to deposit reaction products onto the surface of the compound semiconductor substrate having the ion-implanted layers thereby forming a protective film; and a step of performing heat treatment for activating the ion-implanted layers. The gas converted into plasma through the electron cyclotron resonance process is N.sub.2, O.sub.2, NH.sub.3 or a gas mixture thereof, preferably NH.sub.3.
摘要翻译： 一种用于激活化合物半导体衬底的离子注入层的退火方法，其包括通过电子回旋共振工艺将含有规定成分的气体转化为等离子体的步骤，并用反应气体进行相同的读取以将反应产物沉积到 具有离子注入层的化合物半导体衬底由此形成保护膜; 以及进行用于激活离子注入层的热处理的步骤。 通过电子回旋共振过程转化为等离子体的气体是N 2，O 2，NH 3或其气体混合物，优选NH 3。
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