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    Siloxane polymer composition
    42.
    发明授权
    Siloxane polymer composition 失效
    硅氧烷聚合物组合物

    公开(公告)号：US08450444B2

    公开(公告)日：2013-05-28

    申请号：US12856359

    申请日：2010-08-13

    申请人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    发明人： Kyoung-Mi Kim ,  Young-Ho Kim ,  Youn-Kyung Wang ,  Mi-Ra Park

    IPC分类号： C08G77/385

    CPC分类号： C08G77/38 ,  H01L28/91

    摘要： A siloxane polymer composition includes an organic solvent in an amount of about 93 percent by weight to about 98 percent by weight, based on a total weight of the siloxane polymer composition, and a siloxane complex in an amount of about 2 percent by weight to about 7 percent by weight, based on the total weight of the siloxane polymer composition, the siloxane complex including a siloxane polymer with an introduced carboxylic acid and being represented by Formula 1 below, wherein each of R1, R2 R3, and R4 independently represents H, OH, CH3, C2H5, C3H7, C4H9 or C5H11, R′ represents CH2, C2H4, C3H6, C4H8, C5H10 or C6H12, and n represents a positive integer so the siloxane polymer of the siloxane complex has a number average molecular weight of about 4,000 to about 5,000.

    摘要翻译： 硅氧烷聚合物组合物包含基于硅氧烷聚合物组合物的总重量为约93重量％至约98重量％的量的有机溶剂和约2重量％至约2重量％的硅氧烷配合物 7重量％，基于硅氧烷聚合物组合物的总重量，硅氧烷配合物包括具有引入的羧酸的硅氧烷聚合物并由下式1表示，其中R1，R2 R3和R4各自独立地表示H， OH，CH3，C2H5，C3H7，C4H9或C5H11，R'表示CH2，C2H4，C3H6，C4H8，C5H10或C6H12，n表示正整数，硅氧烷配合物的硅氧烷聚合物的数均分子量为约4,000 至约5,000。

    Fabrication method of nanoparticles by chemical curing
    43.
    发明授权
    Fabrication method of nanoparticles by chemical curing 有权
    通过化学固化制备纳米颗粒的方法

    公开(公告)号：US08422289B2

    公开(公告)日：2013-04-16

    申请号：US12303079

    申请日：2007-06-05

    申请人： Young-Ho Kim ,  Wenguo Dong ,  Gun-Hong Kim ,  Jun-Ro Yoon

    发明人： Young-Ho Kim ,  Wenguo Dong ,  Gun-Hong Kim ,  Jun-Ro Yoon

    IPC分类号： G11C11/34

    CPC分类号： B22F9/16 ,  B22F1/0018 ,  B82Y20/00 ,  B82Y30/00 ,  G02B6/1226 ,  H01L21/28273 ,  H01L29/42332 ,  H01L29/7881 ,  Y10T428/31681 ,  Y10T428/31721

    摘要： A method of producing nanoparticles by using chemical curing. The method includes depositing a metal thin film on a substrate, applying an insulator precursor on a metal thin film, and adding a curing agent and a catalyst to the insulator precursor to perform the chemical curing. The method also includes mixing metal powder and an insulator precursor, applying a mixture on a substrate, and adding a curing agent and a catalyst to the mixture to perform the chemical curing. Since the chemical curing process is used in the method, it is possible to form nanoparticles by using a simple process at low cost while a high temperature process such as thermal curing is not used.

    摘要翻译： 一种通过化学固化生产纳米颗粒的方法。 该方法包括在基板上沉积金属薄膜，在金属薄膜上施加绝缘体前体，并向绝缘体前体添加固化剂和催化剂以进行化学固化。 该方法还包括混合金属粉末和绝缘体前体，在基底上施加混合物，并向混合物中加入固化剂和催化剂以进行化学固化。 由于在该方法中使用化学固化方法，所以可以在不使用诸如热固化的高温工艺的情况下以简单的方法以低成本形成纳米颗粒。

    Methods of forming a pattern using photoresist compositions
    45.
    发明授权
    Methods of forming a pattern using photoresist compositions 有权
    使用光致抗蚀剂组合物形成图案的方法

    公开(公告)号：US08247162B2

    公开(公告)日：2012-08-21

    申请号：US12662455

    申请日：2010-04-19

    申请人： Ji-Man Park ,  Young-Ho Kim ,  Hyo-Jin Yun ,  Sun-Yul Ahn ,  Song-Se Yi ,  Kyung-Woo Park

    发明人： Ji-Man Park ,  Young-Ho Kim ,  Hyo-Jin Yun ,  Sun-Yul Ahn ,  Song-Se Yi ,  Kyung-Woo Park

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0048 ,  G03F7/0046 ,  G03F7/0392

    摘要： A method of forming a pattern and a photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymerized photoresist additive, a polymer including an acid-labile protective group at a side chain, a photoacid generator, and a solvent; exposing the photoresist film; and forming a photoresist pattern by developing the photoresist film using an aqueous alkali developer, wherein the polymerized photoresist additive includes a hydrophilic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing an oxygen heteroatom in a heterocyclic ring substituted with at least three hydroxyl groups, and a hydrophobic repeating unit having an aliphatic hydrocarbon backbone and a side chain containing a fluorinated aliphatic hydrocarbon group.

    摘要翻译： 一种形成图案和光致抗蚀剂组合物的方法，所述方法包括通过在其上涂覆光致抗蚀剂组合物在基底上形成光致抗蚀剂膜，光致抗蚀剂组合物包括聚合的光致抗蚀剂添加剂，在侧链上包含酸不稳定保护基的聚合物 ，光致酸发生剂和溶剂; 曝光光刻胶膜; 以及通过使用含水碱性显影剂显影所述光致抗蚀剂膜来形成光致抗蚀剂图案，其中所述聚合的光致抗蚀剂添加剂包括具有脂族烃骨架的亲水性重复单元和在至少三个羟基取代的杂环中含有氧杂原子的侧链 ，以及具有脂肪族烃主链和含有氟化脂肪族烃基的侧链的疏水性重复单元。

    Methods of Forming a Photoresist Pattern Using Plasma Treatment of Photoresist Patterns
    47.
    发明申请
    Methods of Forming a Photoresist Pattern Using Plasma Treatment of Photoresist Patterns 审中-公开
    使用等离子体处理光刻胶图案形成光刻胶图案的方法

    公开(公告)号：US20110300712A1

    公开(公告)日：2011-12-08

    申请号：US13103375

    申请日：2011-05-09

    申请人： Kyoung-Mi Kim ,  Jeong-Ju Park ,  Mi-Ra Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    发明人： Kyoung-Mi Kim ,  Jeong-Ju Park ,  Mi-Ra Park ,  Bo-Hee Lee ,  Jae-Ho Kim ,  Young-Ho Kim

    IPC分类号： H01L21/308 ,  H01L21/312

    CPC分类号： H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11521

    摘要： Methods of forming a photoresist pattern include forming a first photoresist pattern on a substrate and treating the first photoresist pattern with plasma that modifies etching characteristics of the first photoresist pattern. This modification may include making the first photoresist pattern more susceptible to removal during subsequent processing. The plasma-treated first photoresist pattern is covered with a second photoresist layer, which is patterned into a second photoresist pattern that contacts sidewalls of the plasma-treated first photoresist pattern. The plasma-treated first photoresist pattern is selectively removed from the substrate to reveal the remaining second photoresist pattern. The second photoresist pattern is used as an etching mask during the selective etching of a portion of the substrate (e.g., target layer). The use of the second photoresist pattern as an etching mask may yield narrower linewidths in the etched portion of the substrate than are achievable using the first photoresist pattern alone.

    摘要翻译： 形成光致抗蚀剂图案的方法包括在基板上形成第一光致抗蚀剂图案，并用等离子体处理第一光致抗蚀剂图案，其改变第一光致抗蚀剂图案的蚀刻特性。 该修改可以包括使第一光致抗蚀剂图案在随后的处理期间更易于去除。 等离子体处理的第一光致抗蚀剂图案被第二光致抗蚀剂层覆盖，第二光致抗蚀剂层被图案化成与等离子体处理的第一光致抗蚀剂图案的侧壁接触的第二光致抗蚀剂 从衬底选择性地去除等离子体处理的第一光致抗蚀剂图案以显示剩余的第二光致抗蚀剂图案。 在选择性蚀刻基板（例如，目标层）的一部分期间，将第二光致抗蚀剂图案用作蚀刻掩模。 使用第二光致抗蚀剂图案作为蚀刻掩模可以在衬底的蚀刻部分中产生比仅使用第一光致抗蚀剂图案可实现的更窄的线宽。

    Mask ROM device, semiconductor device including the mask ROM device, and methods of fabricating mask ROM device and semiconductor device
    49.
    发明授权
    Mask ROM device, semiconductor device including the mask ROM device, and methods of fabricating mask ROM device and semiconductor device 失效
    掩模ROM器件，包括掩模ROM器件的半导体器件，以及制造掩模ROM器件和半导体器件的方法

    公开(公告)号：US08053342B2

    公开(公告)日：2011-11-08

    申请号：US12836066

    申请日：2010-07-14

    申请人： Yong-Kyu Lee ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Young-Ho Kim ,  Myung-Jo Chun ,  Jung-Ho Moon

    发明人： Yong-Kyu Lee ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Young-Ho Kim ,  Myung-Jo Chun ,  Jung-Ho Moon

    IPC分类号： H01L21/8238

    CPC分类号： H01L27/105 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/1052 ,  H01L27/11266 ,  H01L27/11293

    摘要： A mask read-only memory (ROM) device, which can stably output data, includes an on-cell and an off-cell. The on-cell includes an on-cell gate structure on a substrate and an on-cell junction structure within the substrate. The off-cell includes an off-cell gate structure on the substrate and an off-cell junction structure within the substrate. The on-cell gate structure includes an on-cell gate insulating film, an on-cell gate electrode and an on-cell gate spacer. The on-cell junction structure includes first and second on-cell ion implantation regions of a first polarity and third and fourth on-cell ion implantation regions of a second polarity. The off-cell gate structure includes an off-cell gate insulating film, an off-cell gate electrode and an off-cell gate spacer. The off-cell junction structure includes first and second off-cell ion implantation regions of the first polarity and a third off-cell ion implantation region of the second polarity.

    摘要翻译： 可以稳定地输出数据的掩模只读存储器（ROM）装置包括接通电池和截止电池。 开放单元包括衬底上的孔上栅极结构和衬底内的电池单元结结构。 离子电池包括在衬底上的离子电池栅极结构和衬底内的细胞外结合结构。 单体栅极结构包括单元间栅极绝缘膜，单晶体栅极电极和单元间栅极间隔物。 该单电池结结构包括具有第一极性的第一和第二开孔离子注入区和第二极性的第三和第四接通电离子注入区。 离群栅极结构包括离子栅极绝缘膜，离子阱栅极电极和非电池栅极间隔物。 离电池结结构包括具有第一极性的第一和第二离子外离子注入区域和第二极性的第三离子间离子注入区域。

    Separation method for multi channel electrophoresis device having no individual sample wells
    50.
    发明授权
    Separation method for multi channel electrophoresis device having no individual sample wells 有权
    没有单个样品孔的多通道电泳装置的分离方法

    公开(公告)号：US07993507B2

    公开(公告)日：2011-08-09

    申请号：US11791509

    申请日：2005-11-16

    申请人： Sang-Ryoul Park ,  In-Chul Yang ,  Young-Ho Kim

    发明人： Sang-Ryoul Park ,  In-Chul Yang ,  Young-Ho Kim

    IPC分类号： G01N27/26 ,  G01N27/447

    CPC分类号： G01N27/44782 ,  B01L9/527 ,  G01N27/44791

    摘要： The present invention is related to a method of separation of compounds by electrophoresis in which the compounds such as genes, proteins, etc. may be analyzed very precisely as samples are introduced directly into the separation tubes of the chip at the collection site, and therefore, it is not necessary to have separate fluid paths or individual sample storing apparatus that have been necessary for the conventional electrophoresis; it is easy to make the chips as the structure of the chip becomes extremely simple, and high-density arrangement of the separation tubes is enabled; and further, the compounds such as genes, proteins, etc. may be analyzed very precisely without interference in the storage tubs by using a non-polar solvent as the solvent of the sample storage tub.

    摘要翻译： 本发明涉及通过电泳分离化合物的方法，其中可以非常精确地分析诸如基因，蛋白质等化合物，因为样品在采集部位直接引入芯片的分离管中，因此 ，不需要为常规电泳所必需的单独的流体路径或单独的样品存储装置; 由于芯片的结构变得非常简单，因此容易制造芯片，并且能够实现高密度的分离管布置; 此外，通过使用非极性溶剂作为样品储存桶的溶剂，可以非常精确地分析诸如基因，蛋白质等化合物而不会干扰存储桶。