公开(公告)号：US5960020A

公开(公告)日：1999-09-28

申请号：US882208

申请日：1997-06-25

申请人： Yutaka Nagai

发明人： Yutaka Nagai

IPC分类号： H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/44 ,  H01S5/00 ,  H01S5/20 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/0655 ,  H01S5/2059

摘要： A ridge type laser diode with a stabilized horizontal transverse mode and little variation in peak output power and a method for producing the laser. The ridge type laser diode includes a semiconductor substrate; an active layer on the semiconductor substrate, the active layer being interposed between a lower cladding layer and an upper cladding layer; and a ridge waveguide having a width, the ridge waveguide being part of the upper cladding layer so that the active layer located directly opposite the ridge waveguide is a first high refractive index region having a first refractive index; and a second high refractive index region in the central part of the first high refractive index region, having a second, higher refractive index than the first refractive index, and formed by disordering a region other than the central part and having a width less than the width of the ridge waveguide.

摘要翻译： 具有稳定的水平横向模式并且峰值输出功率变化小的脊型激光二极管和用于制造激光器的方法。 脊型激光二极管包括半导体衬底; 在所述半导体衬底上的有源层，所述有源层插入在下包层和上覆层之间; 和具有宽度的脊状波导，脊状波导是上部包层的一部分，使得与脊状波导正好相对的有源层为具有第一折射率的第一高折射率区域; 以及在第一高折射率区域的中心部分的第二高折射率区域，具有比第一折射率高的第二高折射率，并且通过使中心部分以外的区域失调而形成，并且具有小于 脊波导的宽度。

公开(公告)号：US5469457A

公开(公告)日：1995-11-21

申请号：US149958

申请日：1993-11-10

申请人： Yutaka Nagai ,  Akihiro Shima

发明人： Yutaka Nagai ,  Akihiro Shima

IPC分类号： H01S5/00 ,  H01S5/022 ,  H01S5/042 ,  H01S5/16 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343 ,  H01S3/18 ,  H01S3/085

CPC分类号： B82Y20/00 ,  H01S5/162 ,  H01S5/02232 ,  H01S5/168 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/3432

摘要： A semiconductor laser includes: a first conductivity type semiconductor substrate; a first conductivity type lower cladding layer disposed on the substrate; a quantum well structure disposed on the lower cladding layer; a second conductivity type upper cladding disposed on the quantum well structure; a ridge including a stripe-shaped second conductivity type semiconductor of a length extending in the laser resonator length direction reaching neither semiconductor laser facet and disposed on the upper cladding layer; disordered regions, i.e, window structures, formed in the quantum well structure in the vicinity of the laser resonator facets by ion-implanting a dopant impurity; and a first conductivity type current blocking layer, disposed on the upper cladding layer on the disordered quantum well structure layer, burying the ridge. Accordingly, in the window structure regions, flow of a current that does not produce laser light is prevented, resulting in a semiconductor laser having a high power light output, a low threshold current, and a low operational current.

摘要翻译： 半导体激光器包括：第一导电型半导体衬底; 设置在所述基板上的第一导电型下包层; 设置在下包层上的量子阱结构; 设置在量子阱结构上的第二导电型上包层; 包括沿激光谐振器长度方向延伸的长度的条状第二导电型半导体的脊不到达半导体激光刻面并且设置在上覆层上; 通过离子注入掺杂剂杂质在激光谐振器面附近在量子阱结构中形成的无序区域，即窗结构; 以及第一导电型电流阻挡层，设置在无序量子阱结构层上的上覆层上，埋入脊。 因此，在窗口结构区域中，防止不产生激光的电流的流动，导致具有高功率光输出，低阈值电流和低工作电流的半导体激光器。

公开(公告)号：US5247203A

公开(公告)日：1993-09-21

申请号：US649062

申请日：1991-02-01

申请人： Kimio Shigihara ,  Yutaka Nagai ,  Toshitaka Aoyagi

发明人： Kimio Shigihara ,  Yutaka Nagai ,  Toshitaka Aoyagi

IPC分类号： H01L23/14 ,  H01L21/28 ,  H01L21/48 ,  H01L21/52 ,  H01L23/36 ,  H01L23/373 ,  H01L29/43 ,  H01S5/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/042

CPC分类号： H01L23/3738 ,  H01L21/4882 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01S5/0021 ,  H01S5/02272 ,  H01S5/02484 ,  H01S5/0425

摘要： A semiconductor device having a semiconductor element and a heat sink radiating heat generated by the semiconductor element includes an amorphous semiconductor film disposed on the heat sink and the semiconductor element disposed on the amorphous semiconductor film. Therefore, the stress applied to the semiconductor element is reduced because of the amorphous semiconductor film. In one structure, an amorphous semiconductor film comprising amorphous silicon or amorphous germanium is sandwiched between first and second metal films and the semiconductor element is bonded to the second metal film. An ohmic contact is made by alloys formed between the amorphous semiconductor film and the first and second metal films.

公开(公告)号：US5223722A

公开(公告)日：1993-06-29

申请号：US850273

申请日：1992-03-12

申请人： Yutaka Nagai ,  Kenichi Kajiwara

发明人： Yutaka Nagai ,  Kenichi Kajiwara

IPC分类号： H01L33/10 ,  H01L33/14 ,  H01L33/30 ,  H01S5/042 ,  H01S5/10

CPC分类号： H01L33/0045 ,  H01S5/0425 ,  H01S5/10

摘要： A superluminescent diode includes a substrate; a double heterojunction structure including a first conductivity type cladding layer, an undoped or first or second conductivity type active layer, and a second conductivity type cladding layer disposed on said substrate; a first conductivity type cap layer disposed on the second conductivity type cladding layer; and a second conductivity type stripe-shaped diffusion region penetrating the cap layer and reaching into the second conductivity type cladding layer. Current is injected into the active layer through the diffusion region. The stripe-shaped diffusion region extends from a front facet toward but not reaching a rear facet and is inclined an angle in a range from 3 to 20 degrees with respect to the front facet. Accordingly, repetition of reflection and amplification of light having a directionality perpendicular to the facets is decreased and the effective reflection of light from both facets is decreased, resulting in an SLD that can operate stably even in high power output operation without inviting laser oscillation and that can be produced with a high yield.

摘要翻译： 超发光二极管包括基板; 包括第一导电型包覆层，未掺杂或第一或第二导电型有源层的双异质结结构和设置在所述基板上的第二导电型包层; 设置在所述第二导电型包层上的第一导电型盖层; 以及穿透盖层并到达第二导电型包层的第二导电型条形扩散区域。 通过扩散区将电流注入有源层。 条形扩散区域从正面朝向但不到达后面延伸，并且相对于前刻面倾斜3〜20度的角度。 因此，具有垂直于小面的方向性的光的反射和放大的重复减少，并且来自两个面的光的有效反射减小，导致即使在高功率输出操作中也可以稳定运行的SLD而不引起激光振荡，并且 可以以高产率生产。

公开(公告)号：US5161164A

公开(公告)日：1992-11-03

申请号：US693318

申请日：1991-04-29

申请人： Kimio Shigihara ,  Yutaka Nagai ,  Toshitaka Aoyagi

发明人： Kimio Shigihara ,  Yutaka Nagai ,  Toshitaka Aoyagi

IPC分类号： H01S5/00 ,  H01S3/105 ,  H01S3/107 ,  H01S5/028 ,  H01S5/062 ,  H01S5/14 ,  H01S5/34

CPC分类号： B82Y20/00 ,  H01S3/105 ,  H01S3/107 ,  H01S5/14 ,  H01S5/34 ,  H01S5/028 ,  H01S5/0285 ,  H01S5/0622 ,  H01S5/3418

摘要： A semiconductor laser device includes a semiconductor laser element having a quantum well structure active layer having n levels of quantum states (n

公开(公告)号：US5126804A

公开(公告)日：1992-06-30

申请号：US710366

申请日：1991-06-03

申请人： Yutaka Nagai ,  Akira Takemoto ,  Hitoshi Watanabe

发明人： Yutaka Nagai ,  Akira Takemoto ,  Hitoshi Watanabe

IPC分类号： H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/30 ,  H01S5/00 ,  H01S5/34

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01S5/341

摘要： A semiconductor optical element includes a semiconductor layer on a semiconductor substrate, a plurality of parallel stripe-shaped grooves in the layer having widths sufficiently narrow to produce a quantum effect and spaced at an interval sufficiently narrow to produce a quantum effect in a semiconductor layer disposed between adjacent grooves, and a structure including alternating semiconductor quantum well and barrier layers disposed on the semiconductor layer in which the quantum well layer thickness is less than the depth of the grooves and sufficiently thin to produce a quantum effect and the barrier layer thickness is larger than the depth of the grooves, the quantum well and barrier layers being alternatingly disposed on the semiconductor layer in the grooves and on regions between adjacent grooves.

公开(公告)号：US4734385A

公开(公告)日：1988-03-29

申请号：US29190

申请日：1987-03-23

申请人： Yutaka Mihashi ,  Yutaka Nagai

发明人： Yutaka Mihashi ,  Yutaka Nagai

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01L21/208 ,  H01S3/19

CPC分类号： H01S5/2232 ,  H01S5/2237

摘要： A semiconductor laser element includes a first cladding layer of first conductivity type provided on a semiconductor substrate of the first conductivity type; a current blocking layer of a second conductivity type provided on the first cladding layer having a stripe groove from which the first cladding layer and is exposed at the bottom thereof; a light guide layer of the first conductivity type provided covering the current blocking layer, the stripe groove, and the first cladding layer exposed from the groove; an active layer provided on the light guide layer curved in the neighborhood of the stripe groove, whose refractive index is larger than that of the light guide layer; and a second cladding layer of the second conductivity type provided on the active layer, whose refractive index is smaller than that of the active layer.

公开(公告)号：US4138394A

公开(公告)日：1979-02-06

申请号：US761020

申请日：1977-01-21

申请人： Shumpei Sakakibara ,  Yutaka Nagai ,  Kenji Fujiwara ,  Takahiro Sakai

发明人： Shumpei Sakakibara ,  Yutaka Nagai ,  Kenji Fujiwara ,  Takahiro Sakai

IPC分类号： C07K5/083 ,  C07K7/06 ,  C07K14/78 ,  C07C103/52

CPC分类号： C07K7/06 ,  C07K14/78 ,  C07K5/0808 ,  Y10S930/28

摘要： Peptide derivatives are obtained by eliminating the masking groups from masked peptide derivatives in which the guanidino group of an arginine residue and the carboxyl group of the arginine residue are masked. The guanidino group can be masked, for example, with a tosyl, nitro or benzyloxycarbonyl group, and the carboxyl group can be masked by converting it to an ester group, for example, a benzyl or t-butyl ester group. The masking groups can be eliminated using hydrogen fluoride, for example.

摘要翻译： 通过从掩蔽的肽衍生物中除去精氨酸残基的胍基和精氨酸残基的羧基被掩蔽，得到肽衍生物。 胍基可以被例如甲苯磺酰基，硝基或苄氧基羰基掩蔽，并且可以通过将羧基转变成酯基例如苄基或叔丁基酯来掩蔽羧基。 例如，可以使用氟化氢来除去掩蔽基团。

公开(公告)号：US09146231B2

公开(公告)日：2015-09-29

申请号：US13369962

申请日：2012-02-09

申请人： Shuji Higashi ,  Yutaka Nagai ,  Shotaro Fujii

发明人： Shuji Higashi ,  Yutaka Nagai ,  Shotaro Fujii

IPC分类号： G01N33/50 ,  G01N33/49 ,  G01N33/53

CPC分类号： G01N33/5091 ,  G01N33/491 ,  G01N33/492 ,  G01N33/5002 ,  G01N33/5306 ,  G01N2800/32

摘要： An object of the present invention is to provide a method which is capable of carrying out detection and evaluation of the vascular endothelial damage with a high degree of accuracy. According to an aspect of the present invention, there is provided a method for testing vascular endothelial damage with respect to a blood sample collected from living organism comprising the steps of: 1) detecting or determining quantitatively vascular endothelial cell-derived microparticle; and 2) detecting or determining quantitatively tissue factor-containing microparticle. Furthermore, according to another aspect of the present invention, there is provided a testing kit of vascular endothelial damage comprising a first antibody which specifically recognizes the vascular endothelium-derived microparticle, and a second antibody which specifically recognizes the tissue factor-containing microparticle.

摘要翻译： 本发明的目的是提供一种能够高精度地进行血管内皮损伤的检测和评价的方法。 根据本发明的一个方面，提供了一种用于测量相对于从活体收集的血液样品的血管内皮损伤的方法，包括以下步骤：1）检测或确定定量血管内皮细胞衍生的微粒; 和2）定量检测或确定组织因子的微粒。 此外，根据本发明的另一方面，提供了包含特异性识别血管内皮衍生的微粒的第一抗体的血管内皮损伤检测试剂盒和特异性识别所述组织因子的微粒的第二抗体。

公开(公告)号：US08597935B2

公开(公告)日：2013-12-03

申请号：US12297517

申请日：2007-01-29

申请人： Yutaka Nagai ,  Shigeko Yamamoto

发明人： Yutaka Nagai ,  Shigeko Yamamoto

IPC分类号： C07K1/00

CPC分类号： G01N33/5094 ,  G01N15/147 ,  G01N2015/0084 ,  G01N2015/149 ,  G01N2015/1497

摘要： A method and an apparatus using acridine orange for sorting particles to precisely carry out the measurement of cells in the blood are provided. The cells in the blood is sorted by the steps of staining cells in the blood with acridine orange, irradiating light on the cells in the blood, determining staining behavior using platelets as a staining indicator, and sorting the cells in the blood.

摘要翻译： 提供了使用吖啶橙分选颗粒以精确地进行血液中细胞测量的方法和装置。 通过用吖啶橙染色血液中细胞的细胞，照射血液中的细胞的光照，使用血小板作为染色指示剂测定染色行为，并对血液中的细胞进行分选，分选血液中的细胞。