公开(公告)号：US09423473B2

公开(公告)日：2016-08-23

申请号：US14606909

申请日：2015-01-27

申请人： mCube Inc.

发明人： Hong Wan ,  Anthony F. Flannery

IPC分类号： G01R33/09 ,  G01R33/02

CPC分类号： G01R33/093 ,  G01R33/0206 ,  G01R33/096 ,  G01R33/098

摘要： A method and structure for a three-axis magnetic field sensing device. An IC layer having first bond pads and second bond pads can be formed overlying a substrate/SOI member with a first, second, and third magnetic sensing element coupled the IC layer. One or more conductive cables can be formed to couple the first and second bond pads of the IC layer. A portion of the substrate member and IC layer can be removed to separate the first and second magnetic sensing elements on a first substrate member from the third sensing element on a second substrate member, and the third sensing element can be coupled to the side-wall of the first substrate member.

公开(公告)号：US09365412B2

公开(公告)日：2016-06-14

申请号：US13855988

申请日：2013-04-03

申请人： MCube, Inc.

发明人： Xiao (Charles) Yang

IPC分类号： H01L27/108 ,  B81B7/00 ,  H01L27/092

CPC分类号： B81B7/008 ,  B81B7/0038 ,  B81B2207/094 ,  B81C1/00238 ,  B81C1/00246 ,  H01L21/8221 ,  H01L27/092 ,  H01L29/0649 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A monolithically integrated CMOS and MEMS device. The device includes a first semiconductor substrate having a first surface region and one or more CMOS IC devices on a CMOS IC device region overlying the first surface region. The CMOS IC device region can also have a CMOS surface region. A bonding material can be provided overlying the CMOS surface region to form an interface by which a second semiconductor substrate can be joined to the CMOS surface region. The second semiconductor substrate has a second surface region coupled to the CMOS surface region by bonding the second surface region to the bonding material. The second semiconductor substrate includes one or more first air dielectric regions. One or more free standing MEMS structures can be formed within one or more portions of the processed first substrate.

摘要翻译： 单片集成CMOS和MEMS器件。 该器件包括第一半导体衬底，该第一半导体衬底具有覆盖第一表面区域的CMOS IC器件区域上的第一表面区域和一个或多个CMOS IC器件。 CMOS IC器件区域也可以具有CMOS表面区域。 可以提供覆盖CMOS表面区域的接合材料，以形成可将第二半导体衬底接合到CMOS表面区域的界面。 第二半导体衬底具有通过将第二表面区域结合到接合材料而耦合到CMOS表面区域的第二表面区域。 第二半导体衬底包括一个或多个第一空气介电区域。 可以在经处理的第一基板的一个或多个部分内形成一个或多个独立的MEMS结构。

公开(公告)号：US09291638B2

公开(公告)日：2016-03-22

申请号：US13745723

申请日：2013-01-18

申请人： mCube Inc.

发明人： Raymond Merrill, Jr. ,  Anthony Flannery, Jr. ,  Shingo Yoneoka

IPC分类号： G01P21/00 ,  G01P15/125 ,  G01P15/08

CPC分类号： G01P15/125 ,  G01P15/08 ,  G01P15/0802 ,  G01P21/00 ,  G01P2015/0831

摘要： A method for providing acceleration data with reduced substrate-displacement bias includes receiving in an accelerometer an external acceleration, determining the acceleration data with reduced substrate displacement bias in a compensation portion in response to a first and a second displacement indicators from a MEMS transducer, and, in response to substrate compensation factors from a MEMS compensation portion, outputting the acceleration data with reduced substrate displacement bias, wherein the first displacement indicator and the second displacement indicator are determined by the MEMS transducer relative to a substrate in response to the external acceleration and to a substrate displacement, and wherein the substrate compensation factors are determined by the MEMS compensation portion relative to the substrate in response to the substrate displacement.

摘要翻译： 用于提供具有减小的衬底位移偏置的加速度数据的方法包括在加速度计中接收外部加速度，响应于来自MEMS换能器的第一和第二位移指示器，在补偿部分中减小衬底位移偏置来确定加速度数据，以及 响应于来自MEMS补偿部分的衬底补偿因子，以减小的衬底位移偏压输出加速度数据，其中第一位移指示器和第二位移指示器响应于外部加速度由MEMS换能器相对于衬底确定，并且 到衬底位移，并且其中衬底补偿因子响应于衬底位移由MEMS补偿部分相对于衬底确定。

公开(公告)号：US09246017B2

公开(公告)日：2016-01-26

申请号：US13761748

申请日：2013-02-07

申请人： mCube, Incorporated

发明人： Dolf van der Heide ,  Shingo Yoneoka

IPC分类号： H01L29/84 ,  G01P15/08

CPC分类号： H01L29/84 ,  G01P15/08 ,  G01P2015/0845 ,  G01P2015/0848

摘要： An integrated MEMS inertial sensor device includes one or more three-axis MEMS inertial sensor devices, such as accelerometers, with dual or single proof mass configurations. These designs can be compact and can decouple the motion of each axis to minimize the measurement errors due to cross-axis sensitivity. Some embodiments include a frame to decouple the motion of two axes and to provide geometric symmetry. Some embodiments also include double-folded springs. In a specific embodiment, the three axes of an integrated MEMS accelerometer device are entirely decoupled. Thus, the actuation of each axis, through a force due to acceleration, has little or substantially no effect on the other axes.

摘要翻译： 集成的MEMS惯性传感器装置包括一个或多个三轴MEMS惯性传感器装置，例如具有双重或单质量质量配置的加速度计。 这些设计可以紧凑，并且可以解耦每个轴的运动，以最小化由于横轴灵敏度引起的测量误差。 一些实施例包括用于解耦两个轴的运动并提供几何对称的框架。 一些实施例还包括双折叠弹簧。 在具体实施例中，集成MEMS加速度计装置的三个轴完全解耦。 因此，通过由于加速度引起的力，每个轴的致动对其它轴几乎没有或基本上没有影响。

公开(公告)号：US20150276405A1

公开(公告)日：2015-10-01

申请号：US14158756

申请日：2014-01-17

申请人： mCube Inc.

发明人： ALI J. RASTEGAR ,  Sanjay Bhandari

IPC分类号： G01C19/5712 ,  B81B7/00 ,  B81B7/02

CPC分类号： G01C19/5776

摘要： An integrated MEMS inertial sensing device can include a MEMS inertial sensor with a drive loop configuration overlying a CMOS IC substrate. The CMOS IC substrate can include an AGC loop circuit coupled to the MEMS inertial sensor. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. A benefit of the AGC loop is that the charge pump of the HV driver inherently includes a ‘time constant’ for charging up of its output voltage. This incorporates the Low pass functionality in to the AGC loop without requiring additional circuitry.

摘要翻译： 集成MEMS惯性感测装置可以包括具有覆盖在CMOS IC衬底上的驱动环配置的MEMS惯性传感器。 CMOS IC衬底可以包括耦合到MEMS惯性传感器的AGC环路电路。 AGC环路的作用方式使得从驱动信号中产生的期望信号幅度将MEMS谐振器速度保持在期望的频率和幅度。 AGC环路的优点是HV驱动器的电荷泵固有地包括用于充电其输出电压的“时间常数”。 这将低通功能集成到AGC环路中，无需额外的电路。

公开(公告)号：US20150268714A1

公开(公告)日：2015-09-24

申请号：US14223903

申请日：2014-03-24

申请人： mCube, Inc.

发明人： ChengLong FU

IPC分类号： G06F1/32

CPC分类号： G06F1/3234 ,  G06F1/1605 ,  G06F1/1626 ,  G06F1/3206 ,  G06F1/3231 ,  G06F1/3287 ,  G06F3/0481 ,  G06F3/0484 ,  G06F3/0488 ,  G06F17/30038 ,  Y02D10/171 ,  Y02D10/173

摘要： A portable computing device using power consumption reduction and a method of operating therefor. The method can include the following steps: determining, in a sensor in the portable computing device, orientation changes of the portable computing device; determining, in the portable computing device, a status of a first operation of the portable computing device; determining, in the portable computing device, a status of a second operation of the portable computing device; discontinuing, in the portable computing device, the second operation in response to when the orientation changes of the portable computing device are less than a threshold, and in response to the status of the first operation and the status of the second operation; and outputting, on a display of the portable computing device, an indication to a user that the second operation has been discontinued.

摘要翻译： 使用功耗降低的便携式计算装置及其操作方法。 该方法可以包括以下步骤：在便携式计算设备的传感器中确定便携式计算设备的方向改变; 在便携式计算设备中确定便携式计算设备的第一操作的状态; 在所述便携式计算设备中确定所述便携式计算设备的第二操作的状态; 响应于便携式计算设备的方向改变何时小于阈值，以及响应于第一操作的状态和第二操作的状态，在便携式计算设备中停止第二操作; 以及在便携式计算设备的显示器上向用户输出第二操作已被停止的指示。

公开(公告)号：US08993362B1

公开(公告)日：2015-03-31

申请号：US13189471

申请日：2011-07-22

申请人： Anthony F. Flannery, Jr.

发明人： Anthony F. Flannery, Jr.

IPC分类号： H01L21/00

CPC分类号： B81C1/00944 ,  B81B2207/015 ,  B81C2201/056

摘要： A method and structure for fabricating a monolithic integrated MEMS device. The method includes providing a substrate having a surface region and forming at least one conduction material and at least one insulation material overlying at least one portion of the surface region. At least one support structure can be formed overlying at least one portion of the conduction and insulation surface regions, and at least one MEMS device can be formed overlying the support structure(s) and the conduction and insulation surface regions. In a variety of embodiments, the support structure(s) can include dielectric or oxide materials. The support structure(s) can then be removed and a cover material can be formed overlying the MEMS device(s), the conduction and insulation materials, and the substrate. In various embodiments, the removal of the support structure(s) can be accomplished via a vapor etching process.

摘要翻译： 用于制造单片集成MEMS器件的方法和结构。 该方法包括提供具有表面区域并形成至少一个导电材料的基底和覆盖在表面区域的至少一部分上的至少一个绝缘材料。 可以形成至少一个支撑结构，覆盖导电和绝缘表面区域的至少一部分，并且至少一个MEMS器件可以形成在覆盖支撑结构和导电和绝缘表面区域上。 在各种实施例中，支撑结构可以包括电介质或氧化物材料。 然后可以移除支撑结构，并且可以形成覆盖MEMS器件，导电和绝缘材料以及衬底的覆盖材料。 在各种实施例中，支撑结构的移除可以通过蒸汽蚀刻工艺来实现。

公开(公告)号：US08969101B1

公开(公告)日：2015-03-03

申请号：US13211305

申请日：2011-08-17

申请人： Hong Wan ,  Anthony F. Flannery

发明人： Hong Wan ,  Anthony F. Flannery

IPC分类号： H01L21/00

CPC分类号： G01R33/093 ,  G01R33/0206 ,  G01R33/096 ,  G01R33/098

摘要： A method and structure for a three-axis magnetic field sensing device. An IC layer having first bond pads and second bond pads can be formed overlying a substrate/SOI member with a first, second, and third magnetic sensing element coupled the IC layer. One or more conductive cables can be formed to couple the first and second bond pads of the IC layer. A portion of the substrate member and IC layer can be removed to separate the first and second magnetic sensing elements on a first substrate member from the third sensing element on a second substrate member, and the third sensing element can be coupled to the side-wall of the first substrate member.

摘要翻译： 一种三轴磁场感测装置的方法和结构。 具有第一接合焊盘和第二接合焊盘的IC层可以形成为覆盖在衬底/ SOI部件上，其中第一，第二和第三磁感应元件耦接于IC层。 可以形成一个或多个导电电缆以连接IC层的第一和第二接合焊盘。 可以去除衬底构件和IC层的一部分，以将第一衬底构件上的第一和第二磁感应元件与第二衬底构件上的第三感测元件分离，并且第三感测元件可以联接到侧壁 的第一衬底构件。

公开(公告)号：US20140352403A1

公开(公告)日：2014-12-04

申请号：US14289494

申请日：2014-05-28

申请人： MCube Inc.

发明人： RAYMOND MERRILL, JR.

IPC分类号： B81C99/00 ,  G01N19/02

CPC分类号： G01N19/02 ,  B81C99/005 ,  G01M99/004 ,  G01N2203/0037

摘要： A system for testing a device under a high gravitational force including a centrifuge with a rotating member and method of operation thereof. An operating power can be applied to a device, which can be coupled to the rotating member. The system can include a rotational control that can be coupled to the centrifuge. This rotational control can be configured to rotate the rotating member in response to a controlled number of revolutions per time period. The system can also include an analysis device for monitoring one or more signals from the device with respect to the controlled number of revolutions per time period. The analysis device can be configured to determine a stiction force associated with the DUT (Device Under Test) in response to the time-varying gravitational forces and to the one or more signals from the DUTs.

摘要翻译： 一种用于在高重力下测试装置的系统，包括具有旋转构件的离心机及其操作方法。 可以将操作功率施加到可以耦合到旋转构件的装置。 该系统可以包括可耦合到离心机的旋转控制。 该旋转控制可以被配置为响应于每个时间段的受控转数来旋转旋转构件。 该系统还可以包括分析装置，用于相对于每个时间段的受控转数来监测来自装置的一个或多个信号。 分析装置可以被配置为响应于随时间变化的重力和来自DUT的一个或多个信号来确定与DUT（被测器件）相关联的静摩擦力。

公开(公告)号：US20140311242A1

公开(公告)日：2014-10-23

申请号：US14162718

申请日：2014-01-23

申请人： mCube Inc.

发明人： TERRENCE LEE ,  WENHUA ZHANG ,  SUDHEER SRIDHARAMURTHY ,  SHINGO YONEOKA

IPC分类号： G01C19/56 ,  G01P15/02

CPC分类号： G01C19/56 ,  B81B7/0038 ,  B81B2201/0235 ,  B81B2201/0242 ,  G01C19/5783 ,  G01P1/003 ,  G01P15/02 ,  G01P15/18 ,  G01P2015/0871 ,  G01P2015/088

摘要： A multi-axis integrated MEMS inertial sensor device. The device can include an integrated 3-axis gyroscope and 3-axis accelerometer on a single chip, creating a 6-axis inertial sensor device. The structure is spatially with efficient use of the design area of the chip by adding the accelerometer device to the center of the gyroscope device. The design architecture can be a rectangular or square shape in geometry, which makes use of the whole chip area and maximizes the sensor size in a defined area. The MEMS is centered in the package, which is beneficial to the sensor's temperature performance. Furthermore, the electrical bonding pads of the integrated multi-axis inertial sensor device can be configured in the four corners of the rectangular chip layout. This configuration guarantees design symmetry and efficient use of the chip area.

摘要翻译： 多轴集成MEMS惯性传感器装置。 该设备可以在单个芯片上包含一个集成的3轴陀螺仪和3轴加速度计，创建了6轴惯性传感器设备。 通过将加速度计装置添加到陀螺仪装置的中心，该结构在空间上有效地利用了芯片的设计区域。 设计架构可以是几何形状的矩形或方形形状，它利用整个芯片区域，并在一定的区域内最大化传感器尺寸。 MEMS集中在封装中，这有利于传感器的温度性能。 此外，集成的多轴惯性传感器装置的电接合焊盘可以配置在矩形芯片布局的四个角中。 该配置保证了设计的对称性和芯片面积的有效利用。