公开(公告)号：US09908780B2

公开(公告)日：2018-03-06

申请号：US15030583

申请日：2013-10-31

申请人： EAST CHINA UNIVERSITY OF SCIENCE AND TECHNOLOGY

发明人： Chongjun Zhao ,  Shudi Min ,  Xiangmao Dong ,  Xiuzhen Qian

IPC分类号： C01B31/04

CPC分类号： C01B32/192 ,  C01B32/184 ,  C01B32/198 ,  C01B32/23

摘要： Methods described herein generally relate to preparing graphene. The method may include contacting at least one elemental metal with a composition having graphene oxide under conditions sufficient to reduce at least a portion of the graphene oxide to graphene. Systems and kits for preparing graphene are also disclosed.

公开(公告)号：US09902619B2

公开(公告)日：2018-02-27

申请号：US14246364

申请日：2014-04-07

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jae-young Choi ,  Hyeon-Jin Shin ,  Seon-mi Yoon

IPC分类号： B32B5/16 ,  C01B3/00 ,  C01B31/04 ,  B82Y30/00 ,  B82Y40/00 ,  G02B6/032 ,  C01B32/184

CPC分类号： C01B32/184 ,  B82Y30/00 ,  B82Y40/00 ,  C01B3/0015 ,  C01B2204/02 ,  C01B2204/04 ,  G02B6/032 ,  Y02E60/328 ,  Y10T428/2982 ,  Y10T428/2991

摘要： Provided is a process for economically preparing a graphene shell having a desired configuration which is applicable in various fields wherein in the process the thickness of the graphene shell can be controlled, and a graphene shell prepared by the process.

公开(公告)号：US20180044185A1

公开(公告)日：2018-02-15

申请号：US15444226

申请日：2017-02-27

申请人： Chien-Min Sung ,  Shao Chung Hu ,  I-Chiao Lin ,  Chien-Pei Yu

发明人： Chien-Min Sung ,  Shao Chung Hu ,  I-Chiao Lin ,  Chien-Pei Yu

IPC分类号： H01L21/02 ,  B82Y40/00 ,  C04B35/653 ,  C04B35/622 ,  C23C14/06 ,  B82Y30/00 ,  C04B35/583

CPC分类号： C01B32/184 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/20 ,  C04B35/583 ,  C04B35/62218 ,  C04B35/653 ,  C04B2235/3203 ,  C23C14/0605 ,  H01L21/0242 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02612 ,  H01L21/02625 ,  Y10S977/734 ,  Y10S977/842 ,  Y10S977/932 ,  Y10T428/24612 ,  Y10T428/31678

摘要： Graphene layers made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, for example, a method of forming a graphite film can include heating a solid substrate under vacuum to a solubilizing temperature that is less than a melting point of the solid substrate, solubilizing carbon atoms from a graphite source into the heated solid substrate, and cooling the heated solid substrate at a rate sufficient to form a graphite film from the solubilized carbon atoms on at least one surface of the solid substrate. The graphite film is formed to be substantially free of lattice defects.

公开(公告)号：US20170368508A1

公开(公告)日：2017-12-28

申请号：US15634767

申请日：2017-06-27

申请人： Massachusetts Institute of Technology

发明人： Jeffrey C. Grossman ,  Nicola Ferralis ,  David Cohen-Tanugi ,  Shreya H. Dave

IPC分类号： B01D71/02 ,  B82Y30/00 ,  C01B32/184 ,  B32B3/00 ,  C08J9/26 ,  C02F1/44

CPC分类号： B01D71/021 ,  B32B3/00 ,  B82Y30/00 ,  C01B32/184 ,  C02F1/442 ,  C08J9/26

摘要： Embodiments described herein relate to porous materials that may be employed in various filtration, purification, and/or separation applications. In some cases, the porous materials may be thin, flexible, and fabricated with control over average pore size and/or the spatial distribution of pores. Such porous materials may be useful in, for example, desalination.

公开(公告)号：US09839896B2

公开(公告)日：2017-12-12

申请号：US14547747

申请日：2014-11-19

申请人： The George Washington University

发明人： Michael Keidar ,  Alexey Shashurin

IPC分类号： B01J19/08 ,  B82Y30/00 ,  B82Y40/00 ,  H01J37/32 ,  C01B31/04

CPC分类号： B01J19/088 ,  B01J19/08 ,  B01J2219/0809 ,  B01J2219/0822 ,  B01J2219/083 ,  B01J2219/0839 ,  B01J2219/0875 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B32/186 ,  H01J37/32614 ,  H01J2329/0444

摘要： A system and method for producing graphene includes a discharge assembly and a substrate assembly. The discharge assembly includes a cathode and an anode, which in one embodiment are offset from each other. The anode produces a flux stream that is deposited onto a substrate. A collection device removes the deposited material from the rotating substrate. The flux stream can be a carbon vapor, with the deposited flux being graphene.

公开(公告)号：US20170327379A1

公开(公告)日：2017-11-16

申请号：US15593132

申请日：2017-05-11

申请人： Universal Evergreen Elements, Inc.

发明人： Dilip Ghimire ,  Smithie Chi Lu

IPC分类号： C01B32/184 ,  C01B32/194

CPC分类号： C01B32/184 ,  C01B32/194 ,  C01P2004/60

摘要： A method for making graphene comprising the steps of reacting a catalyst with a plurality of source carbon solids; creating a graphene precursor from the reaction of the catalyst with the plurality of source carbon solids; pyrolyzing the graphene precursor; and extracting graphene from the pyrolyzed graphene precursor. Creating a graphene precursor comprises the steps of creating a solution comprising deionized water and the catalyst; reacting the catalyst with the plurality of source carbon solids by mixing the plurality of source carbon solids into the solution comprising deionized water and the catalyst; heating the solution; and stirring the heated mixture until substantially all liquid has evaporated. Pyrolyzing the graphene precursor is done by placing the graphene precursor in a furnace; creating an un-oxidizing environment within the furnace; heating the furnace; and annealing the graphene precursor.

公开(公告)号：US20170320742A1

公开(公告)日：2017-11-09

申请号：US15618804

申请日：2017-06-09

申请人： WEST VIRGINIA UNIVERSITY RESEARCH CORPORATION

发明人： Alfred H. STILLER

IPC分类号： C01B32/25 ,  C01F7/58 ,  C01B32/36 ,  C01F11/28 ,  C01B32/942

CPC分类号： C01B32/25 ,  C01B32/05 ,  C01B32/184 ,  C01B32/26 ,  C01B32/36 ,  C01B32/914 ,  C01B32/942 ,  C01F7/58 ,  C01F11/28

摘要： The disclosure provides for methods of oxidizing carbide anions, or negative ions, from salt like carbides at temperatures from about 150° C. to about 750° C. In another aspect, the disclosure provides for reactions with intermediate transition metal carbides. In yet another aspect, the disclosure provides for a system of reactions where salt-like carbide anions and intermediate carbide anions are oxidized to produce pure carbon of various allotropes.

公开(公告)号：US09783423B2

公开(公告)日：2017-10-10

申请号：US14537159

申请日：2014-11-10

申请人： INCUBATION ALLIANCE, INC.

发明人： Kazuo Muramatsu ,  Masahiro Toyoda

IPC分类号： B29B13/02 ,  C01B31/04 ,  B82Y30/00 ,  B82Y40/00 ,  C01B31/02 ,  H01G11/32 ,  H01G11/34 ,  H01G11/36 ,  H01G11/84 ,  H01M4/587 ,  H01M4/62 ,  H01M4/86 ,  C04B35/52 ,  C04B35/532 ,  C04B35/632 ,  C04B35/645 ,  F16L59/02 ,  H01B1/04 ,  H01M4/583 ,  H01M4/36 ,  H01M10/0525 ,  B29K105/00

CPC分类号： C01B32/20 ,  B29B13/021 ,  B29K2105/251 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/152 ,  C01B32/158 ,  C01B32/16 ,  C01B32/18 ,  C01B32/184 ,  C01B2202/36 ,  C04B35/52 ,  C04B35/522 ,  C04B35/532 ,  C04B35/6325 ,  C04B35/6455 ,  C04B2235/3208 ,  C04B2235/3215 ,  C04B2235/40 ,  C04B2235/405 ,  C04B2235/422 ,  C04B2235/425 ,  C04B2235/428 ,  C04B2235/48 ,  C04B2235/5248 ,  C04B2235/526 ,  C04B2235/528 ,  C04B2235/5436 ,  C04B2235/72 ,  C04B2235/725 ,  C04B2235/728 ,  C04B2235/77 ,  F16L59/028 ,  H01B1/04 ,  H01G11/32 ,  H01G11/34 ,  H01G11/36 ,  H01G11/84 ,  H01M4/366 ,  H01M4/583 ,  H01M4/587 ,  H01M4/62 ,  H01M4/625 ,  H01M4/8673 ,  H01M10/0525 ,  Y02E60/13 ,  Y10T83/0591 ,  Y10T428/24999 ,  Y10T428/2918 ,  Y10T428/298 ,  Y10T428/2982

摘要： (Problem)In conventional method for producing artificial graphite, in order to obtain a product having excellent crystallinity, it was necessary to mold a filler and a binder and then repeat impregnation, carbonization and graphitization, and since carbonization and graphitization proceeded by a solid phase reaction, a period of time of as long as 2 to 3 months was required for the production and cost was high and further, a large size structure in the shape of column and cylinder could not be produced. In addition, nanocarbon materials such as carbon nanotube, carbon nanofiber and carbon nanohorn could not be produced.(Means to solve)A properly pre-baked filler is sealed in a graphite vessel and is subsequently subjected to hot isostatic pressing (HIP) treatment, thereby allowing gases such as hydrocarbon and hydrogen to be generated from the filler and precipitating vapor-phase-grown graphite around and inside the filler using the generated gases as a source material, and thereby, an integrated structure of carbide of the filler and the vapor-phase-grown graphite is produced. In addition, nanocarbon materials are produced selectively and efficiently by adding a catalyst or adjusting the HIP treating temperature.

公开(公告)号：US09771665B2

公开(公告)日：2017-09-26

申请号：US15022532

申请日：2014-09-08

申请人： Griffith University

发明人： Francesca Iacopi ,  Mohsin Ahmed ,  Benjamin Vaughan Cunning

IPC分类号： H01L21/00 ,  C30B1/02 ,  C30B1/10 ,  C30B29/02 ,  C01B31/04 ,  B81C1/00 ,  H01L21/02

CPC分类号： C30B1/026 ,  B81C1/0038 ,  B81C2201/0197 ,  C01B32/184 ,  C01B32/188 ,  C30B1/10 ,  C30B29/02 ,  H01L21/00 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/02614

摘要： A process for forming graphene, includes: depositing at least a first and a second metal onto a surface of silicon carbide (SiC), and heating the SiC and the first and second metals under conditions that cause the first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide. The corresponding solubilities of the carbon in the stable silicide and in the second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC.

公开(公告)号：US09768026B2

公开(公告)日：2017-09-19

申请号：US14396041

申请日：2014-10-21

申请人： Solan, LLC

发明人： Mark Alan Davis

IPC分类号： B32B3/10 ,  H01L21/04 ,  C01B31/04 ,  H01B13/00 ,  B82B1/00 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02 ,  H01L21/203 ,  H01L21/306

CPC分类号： H01L21/042 ,  B82B1/00 ,  B82B1/005 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/182 ,  C01B32/184 ,  C01B32/20 ,  C01B2204/04 ,  C23C16/26 ,  C23C16/56 ,  H01B13/0026 ,  H01L21/0226 ,  H01L21/02263 ,  H01L21/02373 ,  H01L21/02422 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/2033 ,  H01L21/30604 ,  H01L29/0684 ,  H01L29/1606 ,  Y10T428/24851

摘要： Graphite-based devices with a reduced characteristic dimension and methods for forming such devices are provided. One or more thin films are deposited onto a substrate and undesired portions of the deposited thin film or thin films are removed to produce processed elements with reduced characteristic dimensions. Graphene layers are generated on selected processed elements or exposed portions of the substrate after removal of the processed elements. Multiple sets of graphene layers can be generated, each with a different physical characteristic, thereby producing a graphite-based device with multiple functionalities in the same device.