Method to prevent low temperature degradation of zirconia
    45.
    发明授权
    Method to prevent low temperature degradation of zirconia 有权
    防止氧化锆低温降解的方法

    公开(公告)号:US07435443B2

    公开(公告)日:2008-10-14

    申请号:US11297075

    申请日:2005-12-08

    Inventor: Guangqiang Jiang

    Abstract: The invention is directed to a method of producing the material that is unaffected by the low-temperature degradation, humidity-enhanced phase transformation typical of yttria-stabilized zirconia, as well as of yttria-stabilized tetragonal zirconia polycrystalline ceramic (Y-TZP). Because of the high fracture toughness and high mechanical strength, this class of materials is widely used, including as implants, such as for the packaging material for small implantable neural-muscular sensors and stimulators. The destructive phase transformation rate is dramatically reduced by coating the surface of the Y-TZP component with dense alumina by a physical vapor deposition process, preferably ion beam assisted deposition.

    Abstract translation: 本发明涉及一种生产该材料的方法,该方法不受氧化钇稳定的氧化锆以及氧化钇稳定的四方晶氧化锆多晶陶瓷(Y-TZP)的低温降解,增湿相变的影响。 由于高断裂韧性和高机械强度,这类材料被广泛使用,包括作为植入物,如用于小植入式神经 - 肌肉传感器和刺激物的包装材料。 通过物理气相沉积工艺,优选离子束辅助沉积法,用致密的氧化铝涂覆Y-TZP组分的表面,显着降低了破坏相变速率。

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