公开(公告)号：US06232787B1

公开(公告)日：2001-05-15

申请号：US09226962

申请日：1999-01-08

Applicant: Chiwoei Wayne Lo ,  Pierre Perez

Inventor： Chiwoei Wayne Lo ,  Pierre Perez

IPC: G01R3128

CPC classification number: H01J37/268 ,  H01J37/28 ,  H01J2237/0048 ,  H01J2237/281 ,  H01J2237/2817

Abstract: Methods of inspecting a microstructure comprise: applying charged particles to the wafer to negatively charge up the wafer over a region having contact or via holes, scanning a charged-particle beam over the region while detecting secondary particles so as to produce a detector signal, determining from the detector signal an apparent dimension of a contact hole, and comparing the apparent dimension of the contact hole with reference information to identify a defect. The reference information can be a conventional voltage-contrast image or can be design data indicating expected physical size of the contact hole and expected electrical connectivity of material within or beneath the contact hole. The wafer can be charged up by directing a flood of electrons toward a surface of the wafer and/or by controlling potential of an energy filter so as to direct secondary electrons back to the wafer while directing a charged-particle beam at the wafer. Other methods of inspecting a microstructure comprise charging up a microstructure, interrogating the microstructure with a charged-particle beam to obtain apparent dimensional information for a feature of the microstructure, and comparing the apparent dimensional information with reference information about the microstructure to identify a defect. Apparatus for inspecting semiconductor wafers and other microstructures are also disclosed, as are computer program products comprising a computer usable media having computer-readable program code embodied therein for controlling a charged-particle-beam system for inspecting a microstructure.

Abstract translation: 检查微结构的方法包括：将带电粒子施加到晶片上以在具有接触孔或通孔的区域上对晶片负电荷，在检测次级粒子的同时扫描带电粒子束，以产生检测器信号，确定 从检测器信号检测接触孔的表观尺寸，并将接触孔的表观尺寸与参考信息进行比较以识别缺陷。 参考信息可以是传统的电压对比图像，或者可以是指示接触孔的预期物理尺寸和接触孔内或下的材料的预期电连接性的设计数据。 可以通过将大量电子引向晶片的表面和/或通过控制能量滤波器的电位来使晶片充电，以便将二次电子引导回到晶片，同时将带电粒子束引导到晶片。 检查微结构的其他方法包括充电微结构，用带电粒子束询问微结构以获得用于微结构特征的表观尺寸信息，并将表观尺寸信息与关于微结构的参考信息进行比较以识别缺陷。 还公开了用于检查半导体晶片和其它微结构的装置，以及计算机程序产品，包括其中包含计算机可读程序代码的计算机可用介质，用于控制用于检查微结构的带电粒子束系统。

公开(公告)号：US5594245A

公开(公告)日：1997-01-14

申请号：US386766

申请日：1995-02-10

Applicant: Hideo Todokoro ,  Kenji Takamoto ,  Tadashi Otaka ,  Fumio Mizuno ,  Satoru Yamada ,  Sadao Terakado ,  Katsuhiro Kuroda ,  Ken Ninomiya ,  Tokuo Kure

Inventor： Hideo Todokoro ,  Kenji Takamoto ,  Tadashi Otaka ,  Fumio Mizuno ,  Satoru Yamada ,  Sadao Terakado ,  Katsuhiro Kuroda ,  Ken Ninomiya ,  Tokuo Kure

IPC: G01B15/00 ,  G01B15/04 ,  H01J37/28 ,  H01J37/30 ,  H01J37/26

CPC classification number: H01J37/3005 ,  G01B15/00 ,  G01B15/04 ,  H01J37/28 ,  H01J2237/2448 ,  H01J2237/24495 ,  H01J2237/281

Abstract: An electron beam, which can transmit through part of a specimen and can reach a portion that is not exposed to the electron beam, is irradiated, and a scanning image is obtained on the basis of a signal secondarily generated from a portion irradiated with the electron beam. Dimension-measuring start and end points are set on the scanning image and a dimension therebetween is measured. A three-dimensional model is assumed, the three-dimensional model is modified so as to match the scanning image, and dimension measurement is carried out on the basis of a modified three-dimensional model.

Abstract translation: 照射可以透过部分试样并且可以到达未暴露于电子束的部分的电子束，并且基于从照射电子的部分二次产生的信号获得扫描图像 光束。 在扫描图像上设置尺寸测量开始点和终点，并测量它们之间的尺寸。 假设三维模型，修改三维模型以匹配扫描图像，并且基于修改的三维模型进行尺寸测量。

公开(公告)号：US20160379798A1

公开(公告)日：2016-12-29

申请号：US15039527

申请日：2014-11-19

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Chie SHISHIDO ,  Takuma YAMAMOTO ,  Shinya YAMADA ,  Maki TANAKA

IPC: H01J37/29 ,  H01J37/244 ,  G01B15/00

CPC classification number: H01J37/29 ,  G01B15/00 ,  G01B15/04 ,  G01B2210/56 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24495 ,  H01J2237/2806 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L22/12

Abstract: In order to allow detecting backscattered electrons (BSEs) generated from the bottom of a hole for determining whether a hole with a super high aspect ratio is opened or for inspecting and measuring the ratio of the top diameter to the bottom diameter of a hole, which are typified in 3D-NAND processes of opening a hole, a primary electron beam accelerated at a high accelerating voltage is applied to a sample. Backscattered electrons (BSEs) at a low angle (e.g. a zenith angle of five degrees or more) are detected. Thus, the bottom of a hole is observed using “penetrating BSEs” having been emitted from the bottom of the hole and penetrated the side wall. Using the characteristics in which a penetrating distance is relatively prolonged through a deep hole and the amount of penetrating BSEs is decreased to cause a dark image, a calibration curve expressing the relationship between a hole depth and the brightness is given to measure the hole depth.

Abstract translation: 为了允许检测从孔的底部产生的背散射电子（BSE），用于确定是否打开具有超高纵横比的孔，或者用于检查和测量孔的顶部直径与底部直径的比， 以3D-NAND打开孔的方式为代表，以高加速电压加速的一次电子束被施加到样品。 检测到低角度（例如五度以上的天顶角）的背散射电子（BSE）。 因此，使用从孔的底部排出并穿透侧壁的“穿透BSE”来观察孔的底部。 利用穿透深度相对延长穿过深孔的特性，并减少穿透性BSE的量使黑暗的图像表现出孔深与亮度之间的关系的校准曲线来测量孔深度。

公开(公告)号：US09336984B2

公开(公告)日：2016-05-10

申请号：US14244802

申请日：2014-04-03

Applicant: Hitachi High-Technologies Corporation

Inventor： Daisuke Bizen ,  Hajime Kawano ,  Hideyuki Kazumi

IPC: H01J37/00 ,  H01J37/28 ,  H01J37/244

CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J2237/2448 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/2806 ,  H01J2237/281

Abstract: In an SEM provided with an ExB deflector for deflecting secondary electrons outside an optical axis of a primary electron beam between an electronic source and an object lens for condensing the primary electron beam and irradiating a sample with the beam, a unit to decelerate the secondary electrons deflected in the ExB deflector, and a magnetic generator for deflecting the decelerated secondary electron are provided, and a plurality of energy filters and detectors are arranged around the magnetic generator. That is, by separating loci of the secondary electrons incident on the energy filters and of the secondary electrons reflected at the energy filters by the magnetic generator, both of the secondary electrons are concurrently detected.

Abstract translation: 在具有ExB偏转器的SEM中，用于使电子源和物镜之间的一次电子束的光轴外侧的二次电子偏转，用于聚集一次电子束并用光束照射样品，使二次电子减速的单元 偏转在ExB偏转器中，并且设置用于使减速二次电子偏转的磁发生器，并且多个能量滤波器和检测器布置在磁发生器周围。 也就是说，通过分离入射到能量滤波器上的二次电子的位置和通过磁性发生器在能量滤波器处反射的二次电子的位置，同时检测二次电子。

公开(公告)号：US20160114503A1

公开(公告)日：2016-04-28

申请号：US14986027

申请日：2015-12-31

Applicant: ASAHI KASEI E-MATERIALS CORPORATION

Inventor： Masaru Suzuki ,  Yoshimichi MITAMURA ,  Masatoshi MAEDA

IPC: B29C33/42 ,  G03F7/00 ,  B29C33/38 ,  C23C14/34

CPC classification number: B29C33/424 ,  B29C33/3842 ,  B29C33/56 ,  B29K2833/04 ,  B29K2905/00 ,  B41C1/05 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/3407 ,  G03F7/0002 ,  H01J2237/281

Abstract: A seamless mold manufacturing method of the invention is a seamless mold manufacturing method having the steps of forming a thermal reaction type resist layer on a sleeve-shaped mold, and exposing using a laser and developing the thermal reaction type resist layer and thereby forming a fine mold pattern, and is characterized in that the thermal reaction type resist layer is comprised of a thermal reaction type resist having a property of reacting in predetermined light intensity or more in a light intensity distribution in a spot diameter of the laser.

Abstract translation: 本发明的无缝模具制造方法是一种无缝模具制造方法，其具有以下步骤：在套筒状模具上形成热反应型抗蚀剂层，并使用激光曝光并显影热反应型抗蚀剂层，从而形成精细 模具图案，其特征在于，热反应型抗蚀剂层由具有在激光的光点直径的光强度分布中以预定的光强度以上反应的性质的热反应型抗蚀剂构成。

公开(公告)号：US20160071688A1

公开(公告)日：2016-03-10

申请号：US14786039

申请日：2014-04-17

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yasunori GOTO ,  Takuma YAMAMOTO

IPC: H01J37/22 ,  H01J37/28

CPC classification number: H01J37/222 ,  H01J37/22 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/281 ,  H01J2237/2815 ,  H01L22/12

Abstract: Provided is a sample observation apparatus including a charged particle optical column that, irradiates a sample including an observation target portion that is a concave portion with a charged particle beam at an acceleration voltage, an image generation section that acquires an image including the observation target portion from a signal acquired with irradiation of the charged particle beam, a storage section that stores information representing a relationship between a brightness ratio of a concave portion and its neighboring portion of a reference sample that is irradiated with the charged particle beam at the acceleration voltage and a value that represents a structure of the concave portions of the reference sample in advance, a calculation section that acquires a brightness ratio of the concave portion and its neighboring portion of the image, and a determination section that determines whether or not a defect occurs in the observation target portion based on the information that represents the relationship and the brightness ratio of the image.

Abstract translation: 本发明提供一种样本观察装置，其包括带电粒子光学柱，其将包括具有加速电压的带有带电粒子束的凹部的观察对象部的样本照射到获取包含观察对象部的图像的图像生成部 存储部分，其存储表示在加速电压下照射带电粒子束的参考样本的凹部的亮度与其相邻部分的亮度比之间的关系的信息;以及存储部， 预先表示参考样本的凹部的结构的值，获取图像的凹部及其相邻部分的亮度比的计算部，以及判断是否发生缺陷的判定部 基于信息th的观察目标部分 at表示图像的关系和亮度比。

公开(公告)号：US20150362524A1

公开(公告)日：2015-12-17

申请号：US14719193

申请日：2015-05-21

Applicant: Applied Materials Israel, Ltd.

Inventor： Konstantin Chirko ,  Alon Litman

IPC: G01Q60/30

CPC classification number: G01Q60/30 ,  G01Q30/02 ,  H01J37/28 ,  H01J2237/281 ,  H01J2237/2815

Abstract: A system, method and a non-transitory compute readable medium for evaluating a high aspect ratio (HAR) hole having a nanometric scale width and formed in a substrate, including obtaining, during an illumination period, multiple measurement results by an electrostatic measurement device that comprises a probe tip that is placed in proximity to the HAR hole; wherein multiple locations within the HAR hole are illuminated with a beam of charged particles during the illumination period; and processing the multiple measurement results to determine a state of the HAR hole.

Abstract translation: 一种用于评估具有纳米尺度宽度并形成在衬底中的高纵横比（HAR）孔的系统，方法和非暂时计算可读介质，包括在照明周期期间通过静电测量装置获得多个测量结果， 包括放置在靠近HAR孔的探针尖端; 其中所述HAR孔内的多个位置在照明周期期间用带电粒子束照射; 并处理多个测量结果以确定HAR孔的状态。

公开(公告)号：US20140367586A1

公开(公告)日：2014-12-18

申请号：US13920284

申请日：2013-06-18

Applicant: Jürgen FROSIEN ,  Benjamin John COOK

Inventor： Jürgen FROSIEN ,  Benjamin John COOK

IPC: H01J37/04

CPC classification number: H01J37/045 ,  H01J37/1478 ,  H01J37/153 ,  H01J37/263 ,  H01J2237/1534 ,  H01J2237/281 ,  H01J2237/2815

Abstract: A charged particle beam device is described. In one aspect, the charged particle beam device includes a charged particle beam source, and a switchable multi-aperture for generating two or more beam bundles from a charged particle beam which includes: two or more aperture openings, wherein each of the two or more aperture openings is provided for generating a corresponding beam bundle of the two or more beam bundles; a beam blanker arrangement configured for individually blanking the two or more beam bundles; and a stopping aperture for blocking beam bundles. The device further includes a control unit configured to control the individual blanking of the two or more beam bundles for switching of the switchable multi-aperture and an objective lens configured for focusing the two or more beam bundles on a specimen or wafer.

Abstract translation: 描述带电粒子束装置。 一方面，带电粒子束装置包括带电粒子束源和用于从带电粒子束产生两个或更多个束束的可切换多孔，其包括：两个或更多个孔口，其中两个或更多个 提供孔径开口以产生两个或更多束束的相应束束; 束消除器配置，其被配置为单独地消隐所述两个或更多个束束; 以及用于阻挡束束的止动孔。 该装置还包括控制单元，该控制单元被配置为控制用于切换可切换多孔的两个或更多束束的单独消隐，以及被配置用于将两束或更多束束聚焦在样本或晶片上的物镜。

公开(公告)号：US08530866B2

公开(公告)日：2013-09-10

申请号：US12709264

申请日：2010-02-19

Applicant: Hideaki Abe

Inventor： Hideaki Abe

IPC: G21K5/04

CPC classification number: H01J37/28 ,  H01J37/263 ,  H01J2237/0048 ,  H01J2237/281 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The pattern observation method for observing a pattern which is formed on an insulating film, includes: irradiating an entirety of the pattern with a charged particle beam, to obtain a temporary image of the pattern which has region information of a convex pattern and a concave pattern; irradiating the convex and concave patterns with the charged particle beam having a first and second voltages based on the region information, to thereby form an electric field between a top surface of the convex pattern and a bottom surface of the concave pattern so that charged particles emitted from the bottom surface of the concave pattern may be drawn out to an outside of the pattern; and irradiating the entirety of the pattern with the charged particle beam to obtain an image of the pattern having the information of the bottom surface of the concave pattern.

Abstract translation: 用于观察形成在绝缘膜上的图案的图案观察方法包括：用带电粒子束照射整个图案，以获得具有凸形图案和凹图案的区域信息的图案的临时图像 ; 利用基于区域信息的具有第一和第二电压的带电粒子束照射凸和凹图案，从而在凸形图案的顶表面和凹图案的底表面之间形成电场，使得带电粒子发射 从凹形图案的底面可以被拉出到图案的外侧; 并用带电粒子束照射整个图案，以获得具有凹形图案底面信息的图案的图像。

公开(公告)号：US08481934B2

公开(公告)日：2013-07-09

申请号：US13107892

申请日：2011-05-14

Applicant: Makoto Ezumi ,  Satoru Iwama ,  Junichi Kakuta ,  Takahiro Sato ,  Akira Ikegami

Inventor： Makoto Ezumi ,  Satoru Iwama ,  Junichi Kakuta ,  Takahiro Sato ,  Akira Ikegami

IPC: H01J37/28

CPC classification number: H01J37/26 ,  G01N23/2251 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/0048 ,  H01J2237/281

Abstract: As an aspect for realizing accurate observation, inspection, or measurement of the contact hole with large aspect ratio, a method and a device to scan a second electron beam after scanning a first electron beam to a sample to charge the sample are proposed wherein the beam diameter of the first electron beam is made larger than the beam diameter of the second electron beam.

Abstract translation: 作为用于实现具有大纵横比的接触孔的精确观察，检查或测量的一个方面，提出了在将第一电子束扫描到样品以对样品充电之后扫描第二电子束的方法和装置，其中， 使第一电子束的直径大于第二电子束的光束直径。