Separator for Electricity Storage Device, Laminate and Porous Film

    公开(公告)号:US20190140242A1

    公开(公告)日:2019-05-09

    申请号:US16178839

    申请日:2018-11-02

    Abstract: An object is to provide a separator excellent in adhesiveness to electrodes and a separator for an electricity storage device also excellent in handling performance. A separator for an electricity storage device having a polyolefin microporous film and a thermoplastic polymer coating layer covering at least a part of at least one of surfaces of the polyolefin microporous film, in which the thermoplastic polymer coating layer, on the polyolefin microporous film, has a portion containing a thermoplastic polymer and a portion not containing the thermoplastic polymer in a sea-island configuration, the thermoplastic polymer coating layer contains the thermoplastic polymer having at least two glass-transition temperatures, at least one of the glass-transition temperatures is in a range of less than 20° C. and at least one of the glass-transition temperatures is in a range of 20° C. or more.

    RESIN MOLD
    4.
    发明申请
    RESIN MOLD 审中-公开

    公开(公告)号:US20180207841A1

    公开(公告)日:2018-07-26

    申请号:US15925342

    申请日:2018-03-19

    Abstract: To provide a resin mold which is excellent in adhesion to a substrate, excellent in release properties from a transfer material resin, further excellent in durability of the resin mold itself, and which endures repetition transfer to the transfer material resin, a resin mold of the invention is a resin mold having a fine concavo-convex structure on the surface, and is characterized in that the fluorine element concentration (Es) in a resin mold surface portion is the average fluorine element concentration (Eb) in the resin forming the resin mold or more.

    Semiconductor light emitting apparatus

    公开(公告)号:US09653657B2

    公开(公告)日:2017-05-16

    申请号:US14897159

    申请日:2014-06-02

    Abstract: A semiconductor light emitting apparatus comprised of a semiconductor light emitting device (100) having a layered semiconductor layer (110) configured by layering at least two or more semiconductor layers (103), (105) and a light emitting layer (104) to emit first light, and a wavelength conversion member that covers at least apart of the semiconductor light emitting device (100), absorbs at least a part of the first light and that emits second light with a wavelength different from that of the first light, characterized in that the semiconductor light emitting device (100) is provided with a fine structure layer, as a component, including dots comprised of a plurality of convex portions or concave portions extending in the out-of-plane direction on one of main surfaces forming the semiconductor light emitting device (100), the fine structure layer forms a two-dimensional photonic crystal (102) controlled by at least one of a pitch among the dots, a dot diameter and a dot height, and that the two-dimensional photonic crystal (102) has at least two or more periods each of 1 μm or more.

    PATTERN WAFER FOR LEDS, EPITAXIAL WAFER FOR LEDS AND METHOD OF MANUFACTURING THE EPITAXIAL WAFER FOR LEDS
    10.
    发明申请
    PATTERN WAFER FOR LEDS, EPITAXIAL WAFER FOR LEDS AND METHOD OF MANUFACTURING THE EPITAXIAL WAFER FOR LEDS 有权
    用于LED的图案波形,LED的外延波形及其制造用于LED的外延波形的方法

    公开(公告)号:US20160149079A1

    公开(公告)日:2016-05-26

    申请号:US14894480

    申请日:2014-05-28

    Inventor: Jun KOIKE

    Abstract: A pattern wafer (10) for LEDs is provided with an uneven structure A (20) having an arrangement with n-fold symmetry substantially on at least a part of the main surface, where in at least a part of the uneven structure A (20), a rotation shift angle Θ meets 0°

    Abstract translation: 用于LED的图案晶片(10)设置有基本上在主表面的至少一部分上具有n倍对称配置的不平坦结构A(20),其中在至少一部分不平坦结构A(20 ),旋转偏移角θ满足0°<Θ&nlE;(180 / n)°,其中Θ是不平坦结构A(20)的布置轴线A相对于主体中的晶轴方向的旋转移动角 表面,凹凸结构A(20)的凸部的顶部是曲率半径超过“0”的角部。 第一半导体层(30),发光半导体层(40)和第二半导体层(50)被层叠在不平坦结构A(20)上以构成用于LED的外延晶片(100)。 可以提供用于LED的图案晶片和用于具有裂纹和内部量子效率IQE的LED的外延晶片。

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