Abstract:
Methods and systems for determining one or more parameters of a wafer inspection process are provided. One method includes acquiring metrology data for a wafer generated by a wafer metrology system. The method also includes determining one or more parameters of a wafer inspection process for the wafer or another wafer based on the metrology data.
Abstract:
Methods and systems for detecting defects on a wafer are provided. One system includes an illumination subsystem configured to direct light to at least one spot on a wafer. The system also includes at least one element configured to block first portion(s) of light scattered from the at least one spot from reaching a detector while allowing second portion(s) of the light scattered from the at least one spot to be detected by the detector. The first portion(s) of the light are scattered from one or more patterned features in a logic region on the wafer. The second portion(s) of the light are not scattered from the one or more patterned features. The detector is not an imaging detector. The system further includes a computer subsystem configured to detect defects on the wafer based on output of the detector.
Abstract:
Methods and systems for generating a wafer inspection process are provided. One method includes storing output of detector(s) of an inspection system during scanning of a wafer regardless of whether the output corresponds to defects detected on the wafer and separating physical locations on the wafer that correspond to bit failures detected by testing of the wafer into a first portion of the physical locations at which the defects were not detected and a second portion of the physical locations at which the defects were detected. In addition, the method includes applying defect detection method(s) to the stored output corresponding to the first portion of the physical locations to detect defects at the first portion of the physical locations and generating a wafer inspection process based on the defects detected by the defect detection method(s) at the first portion of the physical locations.
Abstract:
Various embodiments for extended defect sizing range for wafer inspection are provided. One inspection system includes an illumination subsystem configured to direct light to the wafer. The system also includes an image sensor configured to detect light scattered from wafer defects and to generate output responsive to the scattered light. The image sensor is also configured to not have an anti-blooming feature such that when a pixel in the image sensor reaches full well capacity, excess charge flows from the pixel to one or more neighboring pixels in the image sensor. The system further includes a computer subsystem configured to detect the defects on the wafer using the output and to determine a size of the defects on the wafer using the output generated by a pixel and any neighboring pixels of the pixel to which the excess charge flows.
Abstract:
Methods and systems for generating unbiased wafer defect samples are provided. One method includes selecting the defects detected by each of multiple scans performed on a wafer that have the most diversity in one or more defect attributes such that a diverse set of defects are selected across each scan. In addition, the method may include selecting the defects such that any defect that is selected and is common to two or more of the scans is not selected twice and any defects that are selected are diverse with respect to the common, selected defect. Furthermore, no sampling, binning, or classifying of the defects may be performed prior to selection of the defects such that the sampled defects are unbiased by any sampling, binning, or classifying method.
Abstract:
Illumination subsystems for multi-spot wafer inspection are provided. One illumination subsystem includes a diffractive optical element configured to separate an illumination light beam into multiple light beams and a refractive lens array positioned in the path of the multiple light beams. The refractive lens array is configured to relay the laser beam waist at the diffractive optical element onto a wafer surface and to separately and simultaneously focus each of the multiple light beams to a wafer for inspection.
Abstract:
Various metrology systems and methods for high aspect ratio and large lateral dimension structures are provided. One method includes directing light to one or more structures formed on a wafer. The light includes ultraviolet light, visible light, and infrared light. The one or more structures include at least one high aspect ratio structure or at least one large lateral dimension structure. The method also includes generating output responsive to light from the one or more structures due to the light directed to the one or more structures. In addition, the method includes determining one or more characteristics of the one or more structures using the output.
Abstract:
Methods and systems for segmenting pixels for wafer inspection are provided. One method includes determining a statistic for individual pixels based on a characteristic of the individual pixels in an image acquired for a wafer by an inspection system. The method also includes assigning the individual pixels to first segments based on the statistic. In addition, the method includes detecting one or more edges between the first segments in an image of the first segments and generating an edge map by projecting the one or more edges across an area corresponding to the image for the wafer. The method further includes assigning the individual pixels to second segments by applying the first segments and the edge map to the image for the wafer thereby segmenting the image. Defect detection is performed based on the second segments to which the individual pixels are assigned.