Abstract:
In one embodiment, a phase change memory device includes an insulation structure over a substrate. The insulation structure ahs an opening defined therethrough. A first layer pattern is formed on sidewalls and a bottom of the opening. A second layer pattern is formed on the first layer pattern and substantially fills the opening.
Abstract:
Metal organic chemical vapor deposition (MOCVD) may be utilized in methods of forming an (111) oriented PZT ferroelectric layer at a lower temperature, a ferroelectric capacitor and methods of fabricating, and a ferroelectric memory device using the same may be provided. Using the metal organic chemical vapor deposition, ferroelectric layers, capacitors, and memory devices, which may be fabricated and may have (111) preferred oriented crystal growth.
Abstract:
In a method of manufacturing a ferroelectric capacitor, a lower electrode layer is formed on a substrate. The lower electrode layer includes at least one lower electrode film. A ferroelectric layer is formed on the lower electrode layer, and then an upper electrode layer is formed on the ferroelectric layer. A hard mask structure is formed on the upper electrode layer. The hard mask structure includes a first hard mask and a second hard mask. An upper electrode, a ferroelectric layer pattern and a lower electrode are formed by partially etching the upper electrode layer, the ferroelectric layer and the lower electrode layer using the hard mask structure. The hard mask structure may prevent damage to the ferroelectric layer and may enlarge an effective area of the ferroelectric capacitor so that the ferroelectric capacitor may have enhanced electrical and ferroelectric characteristics.
Abstract:
Methods of forming ferroelectric layers include forming a ferroelectric layer on a substrate and chemically-mechanically polishing a surface of the ferroelectric layer by rotating a polishing pad on the surface at a rotation speed in a range from about 5 rpm to about 25 rpm. This polishing step includes pressing the polishing pad onto the surface of the ferroelectric layer at a pressure in a range from about 0.5 psi to about 3 psi. This polishing step may be followed by the step of exposing the polished surface to a rapid thermal anneal. This anneal can be performed in an inert atmosphere containing a gas selected from a group consisting of nitrogen, helium, argon and neon.
Abstract:
A vapor deposition system can include a first portion of the vapor deposition system that is configured to be purged using a first material and a second portion that is configured to be purged using a second material. Related methods are also disclosed.
Abstract:
In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.
Abstract translation:一方面,提供了形成相变材料层的方法。 该方法包括将包含式1的组合物的反应气体供应到反应室中,将包含Ge(II)的第一源供应到反应室中,并将第二源供应到反应室中。 式1是NR1R2R3,其中R1,R2和R3各自独立地选自H,CH3,C2H5,C3H7,C4H9,Si(CH3)3,NH2,NH(CH3),N(CH3) 2,NH(C 2 H 5)和N(C 2 H 5)2。
Abstract:
A system and a method for handover of a terminal in a wireless communication system are provided. The method includes transmitting, by a serving BS, measurement control information and DRX control information to a terminal; measuring, by the terminal, a channel, based on the measurement control information; operating, by the terminal, in connected DRX, based on the DRX control information; reporting, by the terminal, channel measurement information to the serving BS; determining, by the serving BS, the handover of the terminal based on the channel measurement information provided from the terminal; resetting, by the serving BS, the DRX control information of the terminal; transmitting, by the serving BS, the reset DRX control information to the terminal; operating, by the terminal, in the connected DRX, based on the reset DRX control information provided from the serving BS; and transmitting, by the serving BS, handover indication information to the terminal.
Abstract:
In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.
Abstract:
A system and a method for handover of a terminal in a wireless communication system are provided. The method includes transmitting, by a serving BS, measurement control information and DRX control information to a terminal; measuring, by the terminal, a channel, based on the measurement control information; operating, by the terminal, in connected DRX, based on the DRX control information; reporting, by the terminal, channel measurement information to the serving BS; determining, by the serving BS, the handover of the terminal based on the channel measurement information provided from the terminal; resetting, by the serving BS, the DRX control information of the terminal; transmitting, by the serving BS, the reset DRX control information to the terminal; operating, by the terminal, in the connected DRX, based on the reset DRX control information provided from the serving BS; and transmitting, by the serving BS, handover indication information to the terminal.
Abstract:
A method of fabricating a phase-change semiconductor memory device includes a plasma treatment of an electrode connected to a phase-change material pattern after a conductive layer used to form the electrode has been planarized in the presence of an oxidizing agent. The plasma is formed from a plasma gas having a molecular weight of 17 or less.