Abstract:
A method and apparatus for depositing an etch stop layer. The method begins by introducing process gases into a processing chamber in which a substrate is disposed. An etch stop layer is then deposited over the substrate. An overlying layer is then deposited over the etch stop layer. The etch stop layer substantially protects underlying materials from the etchants used in patterning the overlying layer. Moreover, the etch stop layer also possesses advantageous optical characteristics, making it suitable for use as an antireflective coating in the patterning of layers underlying the etch stop layer.
Abstract:
A method for forming thin polymer layers having low dielectric constants or semiconductor substrates. In one embodiment, the method includes the vaporization of stable di-p-xylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and blending of the resulting gaseous p-xylylene monomers with one or more comonomers having silicon-oxygen bonds and at least two pendent carbon--carbon double bonds. The copolymer films have low dielectric constants, improved thermal stability, and excellent adhesion to silicon oxide layers in comparison to parylene-N homopolymers.
Abstract:
A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH.sub.3 SiH.sub.3, and N.sub.2 O.
Abstract:
An apparatus for minimizing deposition in an exhaust line of a substrate processing chamber. The apparatus includes first and second members having opposing surfaces that define a fluid conduit between them. The fluid conduit includes an inlet, an outlet and a collection chamber between the inlet and the outlet. The apparatus is connected at its inlet to receive the exhaust of the substrate processing chamber, and the collection chamber is structured and arranged to collect particulate matter flowing through the fluid conduit and to inhibit egress of the particulate matter from the collection chamber. A microwave plasma generation system supplies microwave energy within the fluid conduit to form a plasma from etchant gases within the fluid conduit. Constituents from the plasma react with the particulate matter collected in the collection chamber to form gaseous products that may be pumped out of the fluid conduit. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.
Abstract:
A stable process for depositing an antireflective layer. Helium gas is used to lower the deposition rate of plasma-enhanced silane oxide, silane oxynitride, and silane nitride processes. Helium is also used to stabilize the process, so that different films can be deposited. The invention also provides conditions under which process parameters can be controlled to produce antireflective layers with varying optimum refractive index, absorptive index, and thickness for obtaining the desired optical behavior.
Abstract:
A network device includes a plurality of blades, each having a plurality of CPU cores that process requests received by the network device. Each blade further includes an accumulator circuit. Each accumulator circuit periodically aggregates the local counter values of the CPU cores of the corresponding blade. One accumulator circuit is designated as a master, and the other accumulator circuit(s) are designated as slave(s). The slave accumulator circuits transmit their aggregated local counter values to the master accumulator circuit. The master accumulator circuit aggregates the sets of aggregated local counter values to create a set of global counter values. The master accumulator circuit transmits the global counter values to a management processor (for display), to the CPU cores located on its corresponding blade, and to each of the slave accumulator circuits. Each slave accumulator circuit then transmits the global counter values to the CPU cores located on its corresponding blade.
Abstract:
A system for use with a computer is provided, the computer including a self-encrypting drive (SED), the SED including a nominal space and a pre-boot region, wherein the nominal space can be locked to prevent access to the nominal space. The system includes SED management software configured to be loaded in the pre-boot region of the SED. The SED management software includes a pre-boot operating system (OS) and an unlocking program. The unlocking program is configured (a) to execute within the pre-boot OS, and (b) upon successful authentication of a user, to unlock the nominal space of the SED. Other embodiments are described and claimed.