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公开(公告)号：US12027823B2
公开(公告)日：2024-07-02
申请号：US17449560
申请日：2021-09-30
申请人： Lumentum Japan, Inc.
发明人： Shoko Yokokawa , Atsushi Nakamura
CPC分类号： H01S5/2224 , H01S5/1014 , H01S5/12 , H01S5/227 , H01S5/34
摘要： A semiconductor laser includes: a multi-quantum well layer in a mesa structure; a buried layer comprising a semi-insulating semiconductor, the buried layer being in contact with each of both sides of the mesa structure; a first cladding layer with a first conductivity type, the first cladding layer having a lower refractive index than the multi-quantum well layer; a high refractive index layer configured to not absorb light oscillating in the multi-quantum well layer, the high refractive index layer having a higher refractive index than the first cladding layer; a diffraction grating layer at least partially constituting a diffraction grating capable of diffracting the light oscillating in the multi-quantum well layer, the diffraction grating layer not contacting the high refractive index layer; a substrate with the first conductivity type; and a second cladding layer with a second conductivity type above the multi-quantum well layer.
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公开(公告)号：US12027822B2
公开(公告)日：2024-07-02
申请号：US17304526
申请日：2021-06-22
申请人： Lumentum Japan, Inc.
发明人： Atsushi Nakamura , Hayato Takita , Shigetaka Hamada , Ryosuke Nakajima , Masatoshi Arasawa , Ryu Washino
CPC分类号： H01S5/2218 , H01S5/0265 , H01S5/12 , H01S5/2206 , H01S5/227 , H01S5/34
摘要： To provide an optical semiconductor device having excellent long-term reliability, the optical semiconductor device includes: a substrate; a mesa structure provided on the substrate; a semiconductor burial layer provided in contact with two sides of the mesa structure; and an electrode containing Au, which is provided above the semiconductor burial layer. The mesa structure includes a first conductivity type semiconductor layer, a multiple-quantum well layer, and a second conductivity type semiconductor layer, which are stacked in the stated order from a substrate side. The semiconductor burial layer includes a first semi-insulating InP layer provided in contact with side portions of the mesa structure, a first anti-diffusion layer provided in contact with the first semi-insulating InP layer, and a second semi-insulating InP layer provided on the first anti-diffusion layer. The first anti-diffusion layer has an Au diffusion constant that is smaller than that of the first semi-insulating InP layer.
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公开(公告)号：US20240072513A1
公开(公告)日：2024-02-29
申请号：US18501199
申请日：2023-11-03
申请人： Lumentum Japan, Inc.
CPC分类号： H01S5/04256 , H01S5/0282 , H01S5/22 , H01S5/34
摘要： A semiconductor optical device may include a semiconductor substrate; a compound semiconductor layer on the semiconductor substrate; an additional insulating film on the pedestal portion of the compound semiconductor layer, the additional insulating film having an upper surface and a side surface at an inner obtuse angle between them; a passivation film covering the compound semiconductor layer and the additional insulating film except at least part of the mesa portion, the passivation film having a protrusion raised by overlapping with the additional insulating film; a mesa electrode on the at least part of the mesa portion; a pad electrode on the passivation film within the protrusion; and an extraction electrode on the passivation film, the extraction electrode being continuous within and outside the protrusion, the extraction electrode connecting the pad electrode and the mesa electrode, the extraction electrode being narrower in width than the pad electrode.
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公开(公告)号：US11909170B2
公开(公告)日：2024-02-20
申请号：US17357351
申请日：2021-06-24
申请人： Lumentum Japan, Inc.
发明人： Koichiro Adachi
IPC分类号： H01S5/00 , H01S5/023 , H01S5/02 , H01S5/026 , H01S5/02345 , H01S5/0239 , H01S5/042 , H01S5/062 , H01S5/0625 , H01S5/02325
CPC分类号： H01S5/023 , H01S5/026 , H01S5/0207 , H01S5/0239 , H01S5/02325 , H01S5/02345 , H01S5/0427 , H01S5/06226 , H01S5/06251
摘要： A semiconductor light emitting device includes a microstrip substrate with a single-ended transmission line on a top surface, wherein the single-ended transmission line extends from a first end portion to a second end portion, the microstrip substrate has a ground plane on a bottom surface, and the ground plane is opposed and bonded to the conductive pattern. The single-ended transmission line includes a first section and a second section, wherein the second section extends from the first section and includes the second end portion. The second section is lower in characteristic impedance than the first section. A load circuit that includes the wire, the optical modulator, and the termination resistor is electrically connected between the second end portion and the conductive pattern. The load circuit is equal to or lower in the characteristic impedance than the second section.
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公开(公告)号：US20240022042A1
公开(公告)日：2024-01-18
申请号：US18057979
申请日：2022-11-22
申请人： Lumentum Japan, Inc.
发明人： Atsushi NAKAMURA
IPC分类号： H01S5/0625 , H01S5/183 , H01S5/12 , H01S5/028
CPC分类号： H01S5/06258 , H01S5/1835 , H01S5/124 , H01S5/0287
摘要： Provided is a semiconductor laser that includes: an active layer; a grating layer including a phase shift portion with partially different grating periods; a contact layer placed above the grating layer; a highly resistive element higher in electric resistance than the contact layer; and an electrode in contact with the contact layer, and the highly resistive element is below at least a part of a portion of the electrode that overlaps with the phase shift portion.
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公开(公告)号：US20230072390A1
公开(公告)日：2023-03-09
申请号：US18047064
申请日：2022-10-17
申请人： Lumentum Japan, Inc.
IPC分类号： H01L31/11 , H01L31/103
摘要： A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×1016/cm3. The high-concentration layers have a carrier concentration of 1×1017/cm3 or more. At least one of the low-concentration layers includes an absorption layer with a band gap that absorbs incident light.
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公开(公告)号：US11563302B2
公开(公告)日：2023-01-24
申请号：US17110195
申请日：2020-12-02
申请人： Lumentum Japan, Inc.
发明人： Akira Nakanishi , Noriko Sasada , Takayuki Nakajima , Yuji Sekino
摘要： A ridge type semiconductor optical device includes a first conductivity type semiconductor layer including at least a first stripe section; an active layer including at least an active stripe section on the first stripe section; a second conductivity type semiconductor layer including at least a second stripe section on the active stripe section; a ridge electrode on the second stripe section; an insulation film on an end face of each of the first stripe section, the active stripe section, and the second stripe section; and a film heater on the insulation film, the film heater overlapping with the end face of at least the first stripe section.
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公开(公告)号：US11552448B2
公开(公告)日：2023-01-10
申请号：US16901872
申请日：2020-06-15
申请人： Lumentum Japan, Inc.
发明人： Atsushi Nakamura , Kaoru Okamoto , Masatoshi Arasawa , Tetsuya Nishida , Yasushi Sakuma , Shigetaka Hamada , Ryosuke Nakajima
摘要： A semiconductor optical amplifier integrated laser includes a semiconductor laser oscillator portion that oscillates laser light having a wavelength included in a gain band and a semiconductor optical amplifier portion that amplifies laser light output from the semiconductor laser oscillator portion. The semiconductor laser oscillator portion and the semiconductor optical amplifier portion have one common p-i-n structure, the common p-i-n structure includes an active layer, a cladding layer provided apart from the active layer, and a common functional layer formed in the cladding layer, and the common functional layer includes a first portion that reflects light having a wavelength within the gain band in the semiconductor laser oscillator portion and a second portion that transmits light having a wavelength within the gain band in the semiconductor optical amplifier portion.
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公开(公告)号：US20220238745A1
公开(公告)日：2022-07-28
申请号：US17362316
申请日：2021-06-29
申请人： Lumentum Japan, Inc.
IPC分类号： H01L31/11 , H01L31/103
摘要： A semiconductor light-receiving element, includes: a semiconductor substrate; a high-concentration layer of a first conductivity type formed on the semiconductor substrate; a low-concentration layer of the first conductivity type formed on the high-concentration layer of the first conductivity type and in contact with the high-concentration layer of the first conductivity type; a low-concentration layer of a second conductivity type configured to form a PN junction interface together with the low-concentration layer of the first conductivity type; and a high-concentration layer of the second conductivity type formed on the low-concentration layer of the second conductivity type and in contact with the low-concentration layer of the second conductivity type. The low-concentration layers have a carrier concentration of less than 1×1016/cm3. The high-concentration layers have a carrier concentration of 1×1017/cm3 or more. At least one of the low-concentration layers includes an absorption layer with a band gap that absorbs incident light.
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公开(公告)号：US11360279B2
公开(公告)日：2022-06-14
申请号：US16713623
申请日：2019-12-13
申请人： Lumentum Japan, Inc.
发明人： Daisuke Noguchi , Hiroshi Yamamoto
IPC分类号： G02B6/42
摘要： An optical subassembly includes an eyelet including a first through-hole penetrating from a first surface through a second surface; a first lead terminal, which is to be inserted into the first through-hole, and is configured to transmit an electric signal; a dielectric material, which is filled in a space between the first through-hole and the first lead terminal; a device mounting substrate, on which an optical device is to be mounted, and which includes a first conductor pattern configured to transmit the electric signal to the optical device; a metal block having mounted thereon the device mounting substrate; a temperature regulator placed between the metal block and the eyelet; a relay substrate including a second conductor pattern, which is configured to transmit the electric signal to the optical device; a seat, which protrudes from the first surface in a direction extended from the first through-hole, and has a third surface mounting the relay substrate; and a spacer interposed between the third surface and the relay substrate to establish conduction between a rear surface of the relay substrate and the seat.
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