公开(公告)号：US06592196B2

公开(公告)日：2003-07-15

申请号：US09986734

申请日：2001-11-09

Applicant: Yoshitaka Akiyama ,  Nobuhiro Noto ,  Yutaka Shoji ,  Hiroshi Takahagi ,  Osamu Machida ,  Yoshinari Suzuki

Inventor： Yoshitaka Akiyama ,  Nobuhiro Noto ,  Yutaka Shoji ,  Hiroshi Takahagi ,  Osamu Machida ,  Yoshinari Suzuki

IPC: B41J2938

CPC classification number: B41J2/04581 ,  B41J2/04588

Abstract: An appropriate pulse width of a driving pulse for driving a piezoelectric element of ink jet head is determined by using the head difference. That is, the pulse width with which the least change in the ink speed occurs can be used as the pulse width of the driving signal for the piezoelectric actuator. As a result, a reliable ink jet printer head capable of stably ejecting ink droplets over a long period of time and having excellent frequency characteristics can be provided.

公开(公告)号：US5831648A

公开(公告)日：1998-11-03

申请号：US580273

申请日：1995-12-27

Applicant: Masao Mitani ,  Kenji Yamada ,  Katsunori Kawasumi ,  Kazuo Shimizu ,  Osamu Machida

Inventor： Masao Mitani ,  Kenji Yamada ,  Katsunori Kawasumi ,  Kazuo Shimizu ,  Osamu Machida

IPC: B41J2/005 ,  B41J2/14 ,  B41J2/16 ,  B41J2/05

CPC classification number: B41J2/14056 ,  B41J2/005 ,  B41J2/1412 ,  B41J2/14129 ,  B41J2/1603 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/164 ,  B41J2202/11

Abstract: A plurality of heaters are provided on a silicon substrate in a plurality of individual ink channels. Each heater is constructed from a thin-film resistor and a thin-film conductor. The thin-film resistor is formed with an electrical insulation layer at its upper surface. The electrical insulation layer is formed through subjecting the thin-film resistor to a high-temperature thermal oxidation process. The thin-film resistor formed with the electrical insulation layer may be covered with an additional insulation layer of a thickness substantially equal to the thin-film resistor.

Abstract translation: 多个加热器设置在多个单独墨水通道中的硅基板上。 每个加热器由薄膜电阻器和薄膜导体构成。 薄膜电阻器在其上表面形成有电绝缘层。 通过对薄膜电阻进行高温热氧化处理来形成电绝缘层。 形成有电绝缘层的薄膜电阻器可以用厚度基本上等于薄膜电阻器的附加绝缘层覆盖。

公开(公告)号：US5790154A

公开(公告)日：1998-08-04

申请号：US761900

申请日：1996-12-09

Applicant: Masao Mitani ,  Kenji Yamada ,  Osamu Machida

Inventor： Masao Mitani ,  Kenji Yamada ,  Osamu Machida

IPC: B41J2/16 ,  B41J2/05 ,  H01C1/012 ,  H01L29/00

CPC classification number: B41J2/14129 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1643 ,  B41J2/1646 ,  B41J2202/03 ,  B41J2202/13

Abstract: In an ink ejection recording head, a silicon dioxide layer is formed on the surface of a silicon substrate, a silicon nitride layer is formed on the silicon dioxide layer, and a plurality of heaters are formed on the silicon nitride layer. The heater is constituted by a thin film resistor made from a Ta--Si--O alloy and a thin film conductor made from nickel. Further, a gold layer is formed through plating on at least a portion of the thin film conductor to be connected to another conductor prior to thermally oxidizing the heaters.

Abstract translation: 在喷墨记录头中，在硅衬底的表面上形成二氧化硅层，在二氧化硅层上形成氮化硅层，在氮化硅层上形成多个加热器。 加热器由由Ta-Si-O合金制成的薄膜电阻器和由镍制成的薄膜导体构成。 此外，在热氧化加热器之前，在至少一部分薄膜导体上形成金层以连接到另一导体。

公开(公告)号：US5697144A

公开(公告)日：1997-12-16

申请号：US502179

申请日：1995-07-13

Applicant: Masao Mitani ,  Kenji Yamada ,  Katsunori Kawasumi ,  Kazuo Shimizu ,  Osamu Machida

Inventor： Masao Mitani ,  Kenji Yamada ,  Katsunori Kawasumi ,  Kazuo Shimizu ,  Osamu Machida

IPC: B41J2/05 ,  B41J2/16 ,  H05B3/00

CPC classification number: B41J2/14129 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1635 ,  B41J2/1643 ,  B41J2/1646 ,  Y10T29/49083

Abstract: To provide a method of fabricating, using thin-film processes only, a 1,600 dpi head with nozzles arranged two-dimensionally on a substrate, e.g., silicon wafer, a drive LSI, thin-film resistors and thin-film conductors are formed on the silicon wafer. Thereafter, ink channels and through-holes are formed by silicon anisotropic etching from both sides of the silicon wafer. After connecting the orifice plate to the silicon wafer, nozzles are formed in the orifice plate using photoetching.

Abstract translation: 为了提供仅使用薄膜工艺的方法，在基板上例如硅晶片，驱动LSI，薄膜电阻器和薄膜导体上形成具有二维排列的喷嘴的1,600dpi的头部 硅晶片。 此后，通过硅晶片的两侧的硅各向异性蚀刻形成油墨通道和通孔。 在将孔板连接到硅晶片之后，使用光刻在孔板中形成喷嘴。

公开(公告)号：US5265118A

公开(公告)日：1993-11-23

申请号：US853189

申请日：1992-03-18

Applicant: Takashi Takenaka ,  Shigeto Mori ,  Osamu Machida

Inventor： Takashi Takenaka ,  Shigeto Mori ,  Osamu Machida

IPC: C30B29/62 ,  C30B25/00 ,  H05B3/62

CPC classification number: C30B25/005 ,  C30B29/36

Abstract: A silicon carbide whisker production apparatus manufactured by placing a plurality of lidded reaction vessels in the longitudinal direction of an Acheson furnace at intervals, packing graphite grains in the gaps between the adjacent reaction vessels and around the reaction vessels along the longitudinal direction of the furnace starting with the furnace-side ends of terminal electrodes to form a surrounding heating zone, and packing a heat insulating packing around the surrounding heating zone.

Abstract translation: 一种碳化硅晶须生产装置，其通过在Acheson炉的纵向方向间隔放置多个带盖的反应容器而制造，将石墨颗粒沿着炉的纵向方向在相邻反应容器之间的间隙和反应容器周围包装， 端子电极的炉端端形成周围的加热区，并在周围的加热区周围填充隔热填料。

公开(公告)号：US09533502B2

公开(公告)日：2017-01-03

申请号：US13965900

申请日：2013-08-13

Applicant: Osamu Machida ,  Akira Shimofuku ,  Ryo Tashiro ,  Atsushi Takeuchi

Inventor： Osamu Machida ,  Akira Shimofuku ,  Ryo Tashiro ,  Atsushi Takeuchi

IPC: H01L41/33 ,  B41J2/14 ,  H01L41/08 ,  H01L41/332 ,  H01L41/09 ,  H01L41/187 ,  H01L41/318 ,  H01L41/331

CPC classification number: B41J2/14233 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/318 ,  H01L41/33 ,  H01L41/331 ,  H01L41/332

Abstract: An electro-mechanical transducer element is disclosed. The electro-mechanical transducer element includes a first electrode formed on a substrate; an electro-mechanical transducer film formed on at least a part of the first electrode; and a second electrode formed on at least a part of the electro-mechanical transducer film. In at least one cross section of the electro-mechanical transducer film, a film thickness distribution shape is convex to the second electrode side.

Abstract translation: 公开了一种机电换能器元件。 机电换能器元件包括形成在基板上的第一电极; 形成在所述第一电极的至少一部分上的机电换能器膜; 以及形成在所述机电换能器膜的至少一部分上的第二电极。 在机电换能器膜的至少一个截面中，膜厚分布形状向第二电极侧凸出。

公开(公告)号：US20160221033A1

公开(公告)日：2016-08-04

申请号：US15094256

申请日：2016-04-08

Applicant: Yoshikazu AKIYAMA ,  Akira SHIMOFUKU ,  Atsushi TAKEUCHI ,  Osamu MACHIDA

Inventor： Yoshikazu AKIYAMA ,  Akira SHIMOFUKU ,  Atsushi TAKEUCHI ,  Osamu MACHIDA

IPC: B05D1/32 ,  H01L21/02 ,  H01L41/317 ,  H01L49/02 ,  B05D1/02 ,  B05D3/00

CPC classification number: B05D1/322 ,  B05D1/02 ,  B05D3/007 ,  H01L21/02623 ,  H01L27/11568 ,  H01L27/20 ,  H01L28/40 ,  H01L41/0973 ,  H01L41/113 ,  H01L41/1132 ,  H01L41/1876 ,  H01L41/317 ,  H01L41/319 ,  H01L41/332 ,  H05K1/16 ,  H05K3/1241

Abstract: An electronic device includes a substrate; and a plurality of thin-film elements formed on the substrate. Further, the thin-film element includes a thin-film section having a function selected from a group including piezoelectric effect, inverse piezoelectric effect, charge storage, semiconductivity, and conductivity, and the plurality of thin-film elements includes the thin-film sections having two or more different functions.

Abstract translation: 电子装置包括：基板; 以及形成在所述基板上的多个薄膜元件。 此外，薄膜元件包括具有选自包括压电效应，反压电效应，电荷存储，半导电性和导电性的组的功能的薄膜部分，并且多个薄膜元件包括薄膜部分 具有两个或多个不同的功能。

公开(公告)号：US20150307403A1

公开(公告)日：2015-10-29

申请号：US14689138

申请日：2015-04-17

Applicant: Atsushi TAKEUCHI ,  Osamu MACHIDA ,  Akira SHIMOFUKU

Inventor： Atsushi TAKEUCHI ,  Osamu MACHIDA ,  Akira SHIMOFUKU

IPC: C04B35/472 ,  G01P15/02 ,  G01C19/5607 ,  C01G25/00 ,  H01L41/08 ,  F04B19/00 ,  F16K99/00 ,  F16K31/02 ,  G02B26/08 ,  H01L41/187

CPC classification number: C04B35/472 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/164 ,  C23C18/1216 ,  C23C18/1254 ,  C23C18/1283 ,  F04B19/006 ,  F04B43/046 ,  F16K99/0015 ,  F16K99/0048 ,  F16K2099/0092 ,  G02B26/0858 ,  H01L41/1876 ,  H01L41/318 ,  H01L41/331

Abstract: A precursor sol-gel solution is provided that has been subjected to a partial hydrolysis process and is used for forming an oxide dielectric film having a perovskite structure represented by the general formula ABO3. The precursor sol-gel solution is subjected to a stabilization process for controlling a viscosity change resulting from the partial hydrolysis process to be less than or equal to 50%, and water contained in the precursor sol-gel solution is controlled to be greater than or equal to 0.50 times and less than or equal to 10 times by molar ratio with respect to a B site atom contained in the precursor sol-gel solution.

Abstract translation: 提供已经进行部分水解处理的前体溶胶 - 凝胶溶液，并用于形成具有由通式ABO 3表示的钙钛矿结构的氧化物电介质膜。 将前体溶胶 - 凝胶溶液进行稳定化处理，以将由部分水解过程产生的粘度变化控制在小于或等于50％，并且将前体溶胶 - 凝胶溶液中包含的水控制为大于或等于 相对于前体溶胶 - 凝胶溶液中所含的B位原子，为摩尔比的0.50倍以上且小于等于10倍。

公开(公告)号：US20150145924A1

公开(公告)日：2015-05-28

申请号：US14554568

申请日：2014-11-26

Applicant: Akira SHIMOFUKU ,  Osamu Machida ,  Atsushi Takeuchi

Inventor： Akira SHIMOFUKU ,  Osamu Machida ,  Atsushi Takeuchi

IPC: H01L41/08 ,  B41J2/14 ,  H01L41/09 ,  G01B11/14

CPC classification number: H01L41/0805 ,  B41J2/14 ,  B41J2/161 ,  B41J2/1634 ,  B41J2/1645 ,  B41J2202/03 ,  G01B11/14 ,  H01L41/081 ,  H01L41/0973 ,  H01L41/318

Abstract: Disclosed is a method of fabricating an electromechanical transducer film. The method includes treating a surface of a first electrode to be liquid-repellent, the first electrode being formed on one surface of a substrate, irradiating the surface of the first liquid-repellent electrode with an energy ray while moving an irradiation position in accordance with a shape of the electromechanical transducer film to be formed and a shape of an alignment mark to be formed, and forming the alignment mark by applying an application liquid to an area including a portion irradiated with the energy ray in accordance with the shape of the alignment mark in the irradiating step, the application liquid being applied by an inkjet method.

Abstract translation: 公开了一种制造机电换能器薄膜的方法。 该方法包括将第一电极的表面处理为拒水剂，第一电极形成在基板的一个表面上，同时按照照射位置移动照射位置，用能量射线照射第一疏液电极的表面 要形成的机电换能器膜的形状和要形成的对准标记的形状，并且通过根据对准的形状向包括能量射线照射的部分的区域施加施加液体来形成对准标记 在照射步骤中标记，通过喷墨法施加涂布液。

公开(公告)号：US08911063B2

公开(公告)日：2014-12-16

申请号：US13751206

申请日：2013-01-28

Applicant: Yasuhiro Watanabe ,  Osamu Machida ,  Akira Shimofuku ,  Ryo Tashiro ,  Atsushi Takeuchi

Inventor： Yasuhiro Watanabe ,  Osamu Machida ,  Akira Shimofuku ,  Ryo Tashiro ,  Atsushi Takeuchi

IPC: B41J2/045 ,  H05K13/00 ,  H02N11/00 ,  B41J2/14 ,  H01L21/00 ,  B05C9/10 ,  H01L21/67

CPC classification number: H05K13/00 ,  B05C9/10 ,  B41J2/14 ,  H01L21/00 ,  H01L21/67051 ,  H01L21/6715 ,  H02N11/006

Abstract: A thin film forming apparatus which automatically forms, on an electrode layer formed on a substrate, a functional thin film which is crystallized from a precursor layer is disclosed, including a water-repellant film forming unit which forms, on a region other than a region on which is to be formed the functional thin film on the electrode layer, a water-repellant film which includes a self-assembled monolayer; an inkjet coating unit which coats, on the region on which is to be formed the functional thin film on the electrode layer, the precursor layer by an inkjet method; and a controller which controls, to within a predetermined time, a time from forming the water-repellant film with the water-repellant film forming unit to coating the precursor layer with the inkjet coating unit.

Abstract translation: 公开了一种薄膜形成装置，其在形成于基板上的电极层上自动形成从前体层析出的功能性薄膜，其特征在于，具有防水膜形成单元，其在区域以外的区域 在该电极层上形成功能性薄膜，包括自组装单层的防水膜; 喷墨涂布单元，其在要在电极层上形成功能性薄膜的区域上涂布前驱体层; 以及控制器，其在预定时间内控制从防水膜形成单元形成防水膜到使用喷墨涂布单元涂覆前体层的时间。