Abstract:
A liquid crystal display device 1 of the invention has a liquid crystal display panel in which a liquid crystal layer 14 is provided between a TFT substrate 2 and a CF substrate 25 that has a common electrode 26, a light sensing component LS1 with a TFT photosensor that senses external light, and an illuminating means controlled according to the output of the light sensing component. The light sensing component is deployed at the periphery of the TFT substrate's display area DA and uses a thin film transistor as photosensor. A capacitor C is connected between source and drain electrodes SL, DL for such TFT photosensor. One of the capacitor's terminals is connected to a standard voltage source VS via a switch element SW, and the other to the common electrode 26. Voltage that is always lower than the voltage applied to the common electrode by an amount corresponding to a reverse bias voltage is applied to the gate electrode GL for the TFT photosensor. The capacitor's voltage a certain time after the switch element turns off is output. As a result, it will be possible to provide a liquid crystal display device in which the light sensing component incorporated in the liquid crystal display panel is not susceptible to the influence of the drive signals for the display panel, and in which the light sensing component does not induce deterioration of the liquid crystals.
Abstract translation:本发明的液晶显示装置1具有液晶显示面板,其中液晶层14设置在TFT基板2和具有公共电极26的CF基板25之间,具有TFT的光感测部件LS 1 感测外部光的光电传感器,以及根据光检测部件的输出控制的照明装置。 光感测部件配置在TFT基板的显示区域DA的周围,并且使用薄膜晶体管作为光电传感器。 对于这种TFT光电传感器,电容器C连接在源电极和漏电极S L L,D L L之间。 电容器的端子中的一个通过开关元件SW连接到标准电压源V SUB,另一个连接到公共电极26.电压总是低于通过公共电极施加到公共电极的电压 将对应于反向偏置电压的量施加到用于TFT光电传感器的栅电极G L L。 输出开关元件关闭后一定时间内的电容器电压。 结果,可以提供一种液晶显示装置,其中结合在液晶显示面板中的感光元件不受显示面板的驱动信号的影响,并且其中感光部件 不会引起液晶的劣化。
Abstract:
In a masking pattern (a) for patterning word and data lines, length is changed between adjacent word lines so as to be shifted from each other at their tips, and furthermore, the tip of each word line is cut obliquely. It is thus possible to prevent the resist pattern from separation and contact of adjacent patterns. Consequently, it is also possible to prevent break failures of patterned lines and short failures between those patterned lines.
Abstract:
A cam follower includes a shaft member which is cantilevered at one end and a slide bearing fitted onto the outer periphery of the other end of the shaft member. The slide bearing is composed of a cylindrical matrix made of an Fe-based sintered metal material having an Fe content of 90 wt % or more and a slide layer formed from the inner peripheral surface to the both end faces of the matrix. The slide layer is made of a slide material composition having a base material such as polyethylene resin blended with a lubricant such as silicone oil and a globular porous silica impregnated with this lubricant.
Abstract:
A driving circuit of an LCD display apparatus, which adjusts the sampling timing of a video signal. Driving signals from a driving IC and a reference power source are supplied via a flexible printed circuit FPC to an LCD panel. A horizontal clock signal is subjected to switching adjustment in a propagation delay adjustment circuit, which alternatively switches a delay amount of the horizontal clock signal between two levels, and the resulting horizontal clock signal subjected to the switching adjustment is then supplied to a horizontal shift register. The FPC generates a switching signal by branching from either a high potential voltage signal VDD or a low potential voltage signal VSS and supplies the switching signal to the propagation delay adjustment circuit. A phase switching circuit having a function similar to that of the propagation delay adjustment circuit may be provided within the driving IC.
Abstract:
In order to shorten the period for the development and manufacture of a semiconductor integrated circuit device, at the time of transferring integrated circuit patterns onto a wafer by an exposure process, a photomask PM1 is used which is provided partially with light shielding patterns 3a formed of a resist film, in addition to light shielding patterns formed of a metal.
Abstract:
A method for manufacturing an electronic device is provided. In one example of the method, the method prevents deformation of a resist mask caused by the irradiation of exposure light. The resist mask has a resist as an opaque element, and can afford mask patterns undergoing little change even with an increase in the number of wafers subjected to exposure processing. The resist mask maintains a high dimensional accuracy. A photomask pattern is formed using as an opaque element a resist comprising a base resin and Si incorporated therein or a resist with a metal such as Si incorporated thereby by a silylation process, to improve the resistance to active oxygen. The deformation of a resist opaque pattern in a photomask is prevented. The dimensional accuracy of patterns transferred onto a Si wafer is improved in repeated use of the photomask.
Abstract:
A circuit pattern, a reticle alignment mark, a bar code, and a discrimination mark which are formed on a glass plate of a photo mask is constituted of a photo sensitive and photo attenuative material containing a fine particle material and a binder. Discrimination of the photo mask is performed by irradiating predetermined discrimination light on the discrimination mark or the bar code. Alignment of the photo mask by an aligner is performed by irradiating predetermined detection light on the reticle alignment mark. In an exposure process, the pattern on the photo mask is transferred onto a semiconductor wafer by using exposure light having a wavelength different from that of the discrimination light or that of the detection light.
Abstract:
After a shade pattern constituted by a resist film formed on a photomask is stripped, a new shade pattern constituted by a resist film is formed on the photomask to reclaim a photomask.
Abstract:
A semiconductor memory wherein a memory cell region having a plurality of memory cells and a relatively high altitude above the surface of semiconductor substrate is formed at a recessed part of the semiconductor substrate having the recessed part and a projected part, and wherein a peripheral circuit region having a comparatively low altitude from the surface of the semiconductor substrate is formed at the projected part of the semiconductor substrate.
Abstract:
A resist mask having a satisfactory resolution effect may be obtained even in the case of use of exposure light having a wavelength of 200 nm or more. An opaque pattern 2a comprising an organic layer for transferring a pattern is constituted by a multi-layer formed by a photo-absorptive organic layer 3a having an light shielding effect or a light attenuating effect even relative to exposure light having a wavelength of 200 nm or more, and a resist layer 4a for chiefly patterning this.