公开(公告)号：US20110294259A1

公开(公告)日：2011-12-01

申请号：US13205408

申请日：2011-08-08

申请人： Yoshihiko KANZAWA ,  Koji Katayama ,  Satoru Fujii ,  Shunsaku Muraoka ,  Koichi Osano ,  Satoru Mitani ,  Ryoko Miyanaga ,  Takeshi Takagi ,  Kazuhiko Shimakawa

发明人： Yoshihiko KANZAWA ,  Koji Katayama ,  Satoru Fujii ,  Shunsaku Muraoka ,  Koichi Osano ,  Satoru Mitani ,  Ryoko Miyanaga ,  Takeshi Takagi ,  Kazuhiko Shimakawa

IPC分类号： H01L21/36

CPC分类号： H01L27/101 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1675 ,  Y10S438/90

摘要： A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0

摘要翻译： 非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻 电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽， 由TaOx（0

公开(公告)号：US20110233510A1

公开(公告)日：2011-09-29

申请号：US13132058

申请日：2009-12-01

申请人： Yoshihiko Kanzawa ,  Satoru Mitani ,  Zhiqiang Wei ,  Takeshi Takagi ,  Koji Katayama

发明人： Yoshihiko Kanzawa ,  Satoru Mitani ,  Zhiqiang Wei ,  Takeshi Takagi ,  Koji Katayama

IPC分类号： H01L47/00

CPC分类号： H01L27/101 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

摘要： A nonvolatile memory element of the present invention comprises a first electrode (103); a second electrode (109); and a resistance variable layer (106) disposed between the first electrode and the second electrode, resistance values of the resistance variable layer reversibly changing in response to electric signals applied between the first electrode and the second electrode; at least one of the first electrode and the second electrode including a platinum-containing layer (107) comprising platinum; the resistance variable layer including at least a first oxygen-deficient transition metal oxide layer (104) which is not physically in contact with the platinum-containing layer and a second oxygen-deficient transition metal oxide layer (105) which is disposed between the first oxygen-deficient transition metal oxide layer and the platinum-containing layer and is physically in contact with the platinum-containing layer; x

摘要翻译： 本发明的非易失性存储元件包括第一电极（103） 第二电极（109）; 以及设置在所述第一电极和所述第二电极之间的电阻变化层（106），所述电阻变化层的电阻值响应于施加在所述第一电极和所述第二电极之间的电信号而可逆地变化; 所述第一电极和所述第二电极中的至少一个包括含铂的含铂层（107） 所述电阻变化层至少包括不与所述含铂层物理接触的第一缺氧过渡金属氧化物层（104）和第二缺氧过渡金属氧化物层（105），所述第二缺氧过渡金属氧化物层（105）设置在所述第一 氧缺陷型过渡金属氧化物层和含铂层，并且与含铂层物理接触; 当第一缺氧过渡金属氧化物层中包含的缺氧过渡金属氧化物被表示为MOx时，x

公开(公告)号：US20110174708A1

公开(公告)日：2011-07-21

申请号：US13121872

申请日：2009-10-02

申请人： Shin-ichi Oota ,  Hidenari Yamagata ,  Takeshi Takagi ,  Koji Egawa

发明人： Shin-ichi Oota ,  Hidenari Yamagata ,  Takeshi Takagi ,  Koji Egawa

IPC分类号： B01F9/00 ,  B01D15/08 ,  B01L9/00

CPC分类号： G01N35/1097 ,  B01F11/0002 ,  B01F11/0037 ,  B01L9/06 ,  B01L2300/0851 ,  G01N30/06 ,  G01N2035/00524

摘要： A sample stirring device of the present invention includes a driving roller and two follower rollers for coming into contact with a sample container including a cylindrical portion for containing a sample to be stirred. The driving roller is driven for rotation to stir the sample contained in the sample container. The two follower rollers have rotation axes inclined with respect to an axial direction of the cylindrical portion. This arrangement allows the sample container such as a blood collection tube to be rotated stably.

摘要翻译： 本发明的样品搅拌装置包括驱动辊和两个从动辊，用于与包括用于容纳待搅拌样品的圆筒部分的样品容器接触。 驱动辊被驱动旋转以搅拌包含在样品容器中的样品。 两个从动辊具有相对于圆筒部的轴向倾斜的旋转轴。 这种布置允许诸如采血管的样品容器能够稳定地旋转。

公开(公告)号：US07801186B2

公开(公告)日：2010-09-21

申请号：US11952647

申请日：2007-12-07

申请人： Sugio Wako ,  Atsushi Koyama ,  Xiongfei Zhang ,  Hiroshi Matsuura ,  Satoru Abe ,  Takeshi Takagi

发明人： Sugio Wako ,  Atsushi Koyama ,  Xiongfei Zhang ,  Hiroshi Matsuura ,  Satoru Abe ,  Takeshi Takagi

IPC分类号： H01S3/30

CPC分类号： H01S3/09415 ,  G01N2201/06113 ,  G02B6/29317 ,  G02B6/29358 ,  H01S3/06708 ,  H01S3/0675 ,  H01S3/08036 ,  H01S3/1062 ,  H01S3/1618

摘要： A spatial coupling provided between an amplified-light waveguide and an output-light waveguide includes a wavelength selecting element that selectively transmits a light having a desired wavelength band out of a spontaneous emission light generated in the amplified-light waveguide and a lens unit that couples the spontaneous emission light to the wavelength selecting unit. An input-side light reflecting unit provided between a semiconductor pumping laser and the amplified-light waveguide and an output-side light reflecting unit formed on an output side of the spatial coupling unit form a laser resonator.

摘要翻译： 提供在放大光波导和输出光波导之间的空间耦合包括波长选择元件，其选择性地透射在放大光波导中产生的自发发射光中具有期望波长带的光;以及透镜单元，其耦合 对波长选择单元的自发发射光。 设置在半导体泵浦激光器和放大光波导之间的输入侧光反射单元和形成在空间耦合单元的输出侧的输出侧光反射单元形成激光谐振器。

公开(公告)号：US20100200432A1

公开(公告)日：2010-08-12

申请号：US12449732

申请日：2008-02-24

申请人： Tatsuo Kamata ,  Takeshi Takagi

发明人： Tatsuo Kamata ,  Takeshi Takagi

IPC分类号： G01N27/26 ,  C01B21/08

CPC分类号： C12Q1/006 ,  C12Q1/28

摘要： The present invention relates to a method, a reagent and an apparatus for determining a substrate concentration based on an amount of hydrogen peroxide generated from a substrate. In the present invention, a suppressing agent for suppressing a reaction between the hydrogen peroxide and an inhibitor is added. As the suppressing agent, an azide compound such as sodium azide or a nitrite compound such as sodium nitrite is used. In the invention, a supporting electrolyte, such as sodium chloride or potassium chloride may be further added.

摘要翻译： 本发明涉及一种基于从基底产生的过氧化氢量来确定底物浓度的方法，试剂和装置。 在本发明中，添加抑制过氧化氢与抑制剂的反应的抑制剂。 作为抑制剂，可以使用叠氮化钠等叠氮化合物，亚硝酸钠等亚硝酸酯化合物。 在本发明中，可以进一步添加氯化钠或氯化钾等担载电解质。

公开(公告)号：US20100148143A1

公开(公告)日：2010-06-17

申请号：US12600793

申请日：2008-05-16

申请人： Satoru Fujii ,  Yoshihiko Kanzawa ,  Takeshi Takagi ,  Kazuhiko Shimakawa

发明人： Satoru Fujii ,  Yoshihiko Kanzawa ,  Takeshi Takagi ,  Kazuhiko Shimakawa

IPC分类号： H01L45/00 ,  H01L21/16

CPC分类号： H01L27/101 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1625

摘要： A nonvolatile semiconductor apparatus of the present invention comprises (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (105), a resistance value of the resistance variable layer being switchable reversibly in response to an electric signal applied between the electrodes (103), (105), wherein the resistance variable layer (104) comprises an oxide containing tantalum and nitrogen.

摘要翻译： 本发明的非易失性半导体装置包括：（103），设置在第一电极（103）和第二电极（105）之间的第二电极（105）和电阻变化层（104），电阻值 可变层可响应施加在电极（103），（105）之间的电信号而可逆地切换，其中电阻变化层（104）包括含有钽和氮的氧化物。

公开(公告)号：US07729866B2

公开(公告)日：2010-06-01

申请号：US11666055

申请日：2005-10-25

申请人： Koji Sugiyama ,  Takeshi Takagi

发明人： Koji Sugiyama ,  Takeshi Takagi

IPC分类号： G01N33/49 ,  G01N27/327 ,  C12Q1/26

CPC分类号： G01N27/3271

摘要： The present invention relates to a method for measuring the concentration of a particular component in a blood sample containing blood cells based on a variable correlated with the concentration of the particular component. In the present invention, a concentration (S) in blood plasma obtained by removing blood cell components from the blood sample, a concentration (DI) in the blood sample computed by a differential method and a concentration (EP) in the blood sample computed by an equilibrium point method are expressed by a relational expression which is unrelated to the proportion of the blood cell components in the blood sample, and the concentration of the particular component is computed by using the relational expression.

摘要翻译： 本发明涉及基于与特定成分的浓度相关的变量来测定含有血细胞的血液样品中特定成分的浓度的方法。 在本发明中，通过从血液样品中除去血细胞成分而获得的血浆中的浓度（S），通过微分法计算的血液样品中的浓度（DI）和血液样品中的浓度（EP） 平衡点法由与血样中血细胞成分比例无关的关系表达式表示，特定成分的浓度用关系式计算。

公开(公告)号：US20090014710A1

公开(公告)日：2009-01-15

申请号：US12281034

申请日：2007-03-06

申请人： Yoshio Kawashima ,  Takeshi Takagi ,  Takumi Mikawa ,  Zhiqiang Wei

发明人： Yoshio Kawashima ,  Takeshi Takagi ,  Takumi Mikawa ,  Zhiqiang Wei

IPC分类号： H01L45/00

CPC分类号： H01L27/101 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1658 ,  H01L45/1675

摘要： A lower electrode layer 2, an upper electrode layer 4 formed above the lower electrode layer 2, and a metal oxide thin film layer 3 formed between the lower electrode layer 2 and the upper electrode layer 4 are provided. The metal oxide thin film layer 3 includes a first region 3a whose value of resistance increases or decreases by an electric pulse that is applied between the lower electrode layer 2 and the upper electrode layer 4 and a second region 3b arranged around the first region 3a and having a larger content of oxygen than the first region 3a, wherein the lower and upper electrode layers 2 and 4 and at least a part of the first region 3a are arranged so as to overlap as viewed from the direction of the thickness of the first region 3a.

摘要翻译： 设置下电极层2，形成在下电极层2上的上电极层4和形成在下电极层2和上电极层4之间的金属氧化物薄膜层3。 金属氧化物薄膜层3包括第一区域3a，其第一区域3a的电阻值通过施加在下电极层2和上电极层4之间的电脉冲和围绕第一区域3a布置的第二区域3b而增大或减小，以及 具有比第一区域3a更大的氧含量，其中下电极层2和上电极层4以及第一区域3a的至少一部分从第一区域的厚度方向观察而重叠 3a。

公开(公告)号：US07133626B2

公开(公告)日：2006-11-07

申请号：US10902790

申请日：2004-08-02

申请人： Miho Kaiga ,  Takeshi Takagi

发明人： Miho Kaiga ,  Takeshi Takagi

IPC分类号： G03G15/00 ,  H02J1/00

CPC分类号： G03G7/00 ,  G03G7/0053 ,  G03G21/1628 ,  G03G2215/00548 ,  G03G2221/1687

摘要： An image forming apparatus includes an image forming portion for forming an image, an image reading portion for reading an image, displaceable with respect to the image forming portion, and an open/closable member that can be opened or closed with respect to a main body of the image forming portion and displaced toward the image reading portion, wherein the displacement of the open/closable member is effected in relation to the displacement of the image reading portion. In this manner the open/closable member can be opened or closed by a simple operation, without increasing the dimension of the image forming apparatus.

摘要翻译： 图像形成装置包括用于形成图像的图像形成部分，用于读取图像的图像读取部分，可相对于图像形成部分移位;以及打开/关闭部件，其可相对于主体打开或关闭 并且朝向图像读取部分移位，其中打开/关闭部件的位移相对于图像读取部分的位移进行。 以这种方式，可以通过简单的操作来打开或关闭打开/关闭构件，而不增加图像形成装置的尺寸。

公开(公告)号：US06876045B2

公开(公告)日：2005-04-05

申请号：US10626642

申请日：2003-07-25

申请人： Takeshi Takagi

发明人： Takeshi Takagi

IPC分类号： H01L21/28 ,  H01L21/321 ,  H01L21/8238 ,  H01L29/10 ,  H01L29/49 ,  H01L29/78 ,  H01L29/80 ,  H01L29/72

CPC分类号： H01L29/4983 ,  H01L21/2807 ,  H01L21/28105 ,  H01L21/28114 ,  H01L21/28247 ,  H01L21/32105 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/82385 ,  H01L21/823864 ,  H01L29/1054 ,  H01L29/7836 ,  H01L29/802

摘要： This specification relates to a process for manufacturing a semiconductor device, comprising the steps of: forming a lower gate electrode film on a semiconductor substrate 10 via a gate insulating film 11; forming an upper gate electrode film on the lower gate electrode film, the upper gate electrode film being made of a material having a lower oxidation rate than that of the lower gate electrode film; forming a gate electrode 12 by patterning the upper gate electrode film and the lower gate electrode film, the gate electrode 12 comprising a lower gate electrode element 12a and an upper gate electrode element 12b; forming source/drain regions 15 by introducing an impurity into the semiconductor substrate 10; and forming oxide film sidewalls 13 by oxidizing the side faces of the lower gate electrode element 12a and the upper gate electrode element 12b, the thickness of the oxide film sidewalls 13 in the gate length direction being larger at the sides of the lower gate electrode element 12a than at the sides of the upper gate electrode element 12b.

摘要翻译： 本说明书涉及半导体器件的制造方法，其特征在于，包括以下步骤：通过栅极绝缘膜11在半导体衬底10上形成下部栅极电极膜; 在下栅电极膜上形成上栅极电极膜，上栅极电极膜由比下栅极电极膜氧化率低的材料制成; 通过图案化上栅极电极膜和下栅极电极膜形成栅电极12，栅电极12包括下栅电极元件12a和上栅极电极元件12b; 通过将杂质引入到半导体衬底10中来形成源/漏区15; 以及通过氧化下部栅极电极元件12a和上部栅极电极元件12b的侧面而形成氧化膜侧壁13，栅极长度方向上的氧化膜侧壁13的厚度在下部栅极电极元件的侧面较大 12a比在上栅极电极元件12b的侧面处。