公开(公告)号：US10738008B2

公开(公告)日：2020-08-11

申请号：US16400269

申请日：2019-05-01

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson

IPC: C07F1/08 ,  C07D213/38 ,  C07F7/00 ,  C07D207/335 ,  C07D213/36 ,  C23C16/455 ,  C23C16/18 ,  C07F1/00 ,  C07F5/02 ,  C07F5/06 ,  C07F7/28 ,  C07F9/00 ,  C07F11/00 ,  C07F13/00 ,  C07F15/00 ,  C07C211/13 ,  C07C211/54 ,  C23C16/50

Abstract: Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.

公开(公告)号：US20200148712A1

公开(公告)日：2020-05-14

申请号：US16747220

申请日：2020-01-20

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/00 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  C23C16/50 ,  C23C16/34

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R′ is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US10364492B2

公开(公告)日：2019-07-30

申请号：US14515958

申请日：2014-10-16

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  David Thompson ,  Ravi Kanjolia ,  Shaun Garrett

IPC: C23C16/18 ,  C23C16/455 ,  C22C22/00 ,  C23C16/34

Abstract: Methods are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising an amidoimino-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a co-reagent.

公开(公告)号：US10323054B2

公开(公告)日：2019-06-18

申请号：US15823755

申请日：2017-11-28

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/06 ,  C07F5/00 ,  C07F15/04 ,  C07F15/02

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one aza-allyl ligand having the structure represented by: where each R1-R4 are independently selected from the group consisting of H, branched or unbranched C1-C6 alkyl, branched or unbranched C1-C6 alkenyl, branched or unbranched C1-C6 alkynyl, cycloalkyl groups having in the range of 1 to 6 carbon atoms, silyl groups and halogens. Methods of depositing a film using the metal coordination complex and a suitable reactant are also described.

公开(公告)号：US10297462B2

公开(公告)日：2019-05-21

申请号：US15789282

申请日：2017-10-20

Applicant: Applied Materials, Inc.

Inventor： Jeffrey W. Anthis ,  Benjamin Schmiege ,  David Thompson

IPC: H01L21/3213 ,  C23F1/00 ,  H01J37/32 ,  C23F1/12 ,  C23F4/00

Abstract: Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate surface; and exposing the activated substrate surface to a reagent comprising a Lewis base or pi acid to provide a vapor phase coordination complex comprising one or more atoms of the transition metal coordinated to one or more ligands from the reagent. Certain other methods provide selective etching from a multi-layer substrate comprising two or more of a layer of Co, a layer of Cu and a layer of Ni.

公开(公告)号：US10219373B2

公开(公告)日：2019-02-26

申请号：US15912388

申请日：2018-03-05

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Mark Saly ,  Bhaskar Jyoti Bhuyan

IPC: H01L21/02 ,  H05K1/02 ,  C23C16/455 ,  C23C16/04 ,  C23C16/50 ,  H01L21/311 ,  H01L21/67 ,  C07F7/00 ,  H01L21/3105 ,  H01L21/32 ,  G03G15/00 ,  G03G21/16 ,  H05K1/11 ,  H05K3/40

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface. Methods include soaking a substrate surface comprising hydroxyl-terminations with a silylamine to form silyl ether-terminations and depositing a film onto a surface other than the silyl ether-terminated surface.

公开(公告)号：US20190013202A1

公开(公告)日：2019-01-10

申请号：US16128962

申请日：2018-09-12

Applicant: Applied Materials,Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan

IPC: H01L21/033 ,  H01L21/3213 ,  C23F1/00

CPC classification number: H01L21/0338 ,  C23F1/00 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/321 ,  H01L21/32133 ,  H01L21/32139 ,  H01L21/76805 ,  H01L21/76883 ,  H01L21/76897

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US10109520B2

公开(公告)日：2018-10-23

申请号：US15285011

申请日：2016-10-04

Applicant: APPLIED MATERIALS, INC.

Inventor： Sree Rangasai V. Kesapragada ,  Kevin Moraes ,  Srinivas Guggilla ,  He Ren ,  Mehul Naik ,  David Thompson ,  Weifeng Ye ,  Yana Cheng ,  Yong Cao ,  Xianmin Tang ,  Paul F. Ma ,  Deenesh Padhi

IPC: H01L21/768 ,  H01L21/02

Abstract: In some embodiments, a method of forming an interconnect structure includes selectively depositing a barrier layer atop a substrate having one or more exposed metal surfaces and one or more exposed dielectric surfaces, wherein a thickness of the barrier layer atop the one or more exposed metal surfaces is greater than the thickness of the barrier layer atop the one or more exposed dielectric surfaces. In some embodiments, a method of forming an interconnect structure includes depositing an etch stop layer comprising aluminum atop a substrate via a physical vapor deposition process; and depositing a barrier layer atop the etch stop layer via a chemical vapor deposition process, wherein the substrate is transferred from a physical vapor deposition chamber after depositing the etch stop layer to a chemical vapor deposition chamber without exposing the substrate to atmosphere.

公开(公告)号：US10083834B2

公开(公告)日：2018-09-25

申请号：US15718148

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Benjamin Schmiege ,  Jeffrey W. Anthis ,  Abhijit Basu Mallick ,  Susmit Singha Roy ,  Ziqing Duan

IPC: H01L21/00 ,  H01L21/033 ,  C23F1/00 ,  H01L21/3213

CPC classification number: H01L21/0338 ,  C23F1/00 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/321 ,  H01L21/32133 ,  H01L21/32139 ,  H01L21/76805 ,  H01L21/76883 ,  H01L21/76897

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.

公开(公告)号：US09916975B2

公开(公告)日：2018-03-13

申请号：US14919149

申请日：2015-10-21

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC: H01L21/4763 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  C23C16/00 ,  H01L21/02 ,  C23C16/18 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768 ,  C23C16/34

CPC classification number: H01L21/02271 ,  C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76873 ,  H01L23/53238

Abstract: Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.