利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

254 条记录 (耗时 0.031 秒)

    TANTALUM AMIDO-COMPLEXES WITH CHELATE LIGANDS USEFUL FOR CVD AND ALD OF TaN AND Ta205 THIN FILMS
    51.
    发明申请
    TANTALUM AMIDO-COMPLEXES WITH CHELATE LIGANDS USEFUL FOR CVD AND ALD OF TaN AND Ta205 THIN FILMS 有权
    具有适用于TaN和Ta205薄膜的CVD和ALD的CHATEAL配体的TANTALUM AMIDO复合物

    公开(公告)号：US20100240918A1

    公开(公告)日：2010-09-23

    申请号：US12790835

    申请日：2010-05-30

    申请人： Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum

    发明人： Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum

    IPC分类号： C07F9/00

    CPC分类号： C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.

    摘要翻译： 公开了式I的钽化合物，其用作形成含钽膜如阻挡层的前体。 可以通过CVD或ALD沉积式I的钽化合物以形成包括电介质层，电介质层上的阻挡层和阻挡层上的铜金属化的半导体器件结构，其中阻挡层包括含Ta层 和足够的碳，使得含Ta层是无定形的。 根据一个实施例，半导体器件结构通过CVD或ALD从包含式I的钽化合物的前体在低于约400℃的还原或惰性的沉积中制备 气氛，例如任选地含有还原剂的气体或等离子体。

    A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators
    54.
    发明授权
    A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators 失效
    A位和/或B位修饰的PbZrTiO3材料和在铁电随机存取存储器中有用的（Pb，Sr，Ca，Ba，Mg）（Zr，Ti，Nb，Ta）O 3膜和高性能薄膜微致动器

    公开(公告)号：US06312816B1

    公开(公告)日：2001-11-06

    申请号：US09026946

    申请日：1998-02-20

    申请人： Jeffrey F. Roeder ,  Ing-Shin Chen ,  Steven Bilodeau ,  Thomas H. Baum

    发明人： Jeffrey F. Roeder ,  Ing-Shin Chen ,  Steven Bilodeau ,  Thomas H. Baum

    IPC分类号： H01G406

    CPC分类号： H01L41/187 ,  C30B25/02 ,  C30B29/32

    摘要： A modified PbZrTiO3 perovskite crystal material thin film, wherein the PbZrTiO3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

    摘要翻译： 一种改性PbZrTiO3钙钛矿晶体材料薄膜，其中所述PbZrTiO3钙钛矿晶体材料包括晶格A位点和B位，其中至少一个通过存在选自以下的取代基进行修饰：（i）A-位点 由Sr，Ca，Ba和Mg组成的取代基，（ii）选自Nb和Ta的B位取代基。 钙钛矿晶体薄膜材料可以通过从薄膜的金属组分的金属有机前体的液体输送MOCVD形成，以形成PZT和PSZT等压电和铁电薄膜材料。 本发明的薄膜在非挥发性铁电存储器件（NV-FeRAM）中以及在微机电系统（MEMS）中用作传感器和/或致动器元件，例如需要低输入功率电平的高速数字系统致动器。

    Composition and method for forming thin film ferrite layers on a substrate
    55.
    发明授权
    Composition and method for forming thin film ferrite layers on a substrate 失效
    在基板上形成薄膜铁氧体层的组合物和方法

    公开(公告)号：US6030454A

    公开(公告)日：2000-02-29

    申请号：US828404

    申请日：1997-03-28

    申请人： Jeffrey F. Roeder ,  Thomas H. Baum

    发明人： Jeffrey F. Roeder ,  Thomas H. Baum

    IPC分类号： C23C16/40 ,  C30B25/02

    CPC分类号： C30B25/02 ,  C23C16/406 ,  C30B29/22

    摘要： A method of forming a thin film ferrite material on a substrate from corresponding precursor(s), comprising liquid delivery and flash vaporization thereof to yield a precursor vapor, and transporting the precursor vapor to a chemical vapor deposition reactor for formation of the thin film ferrite material on the substrate. The invention also contemplates a device comprising a ferrite layer on a substrate, in which the ferrite layer is formed on the substrate by a process as described above.

    摘要翻译： 一种从相应的前体在衬底上形成薄膜铁氧体材料的方法，包括液体输送和闪蒸以产生前体蒸汽，并将前体蒸气输送到化学气相沉积反应器以形成薄膜铁素体 材料在基板上。 本发明还考虑了一种在衬底上包括铁氧体层的器件，其中铁氧体层通过如上所述的工艺形成在衬底上。

    Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
    56.
    发明授权
    Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films 有权
    具有螯合配体的钽酰氨基复合物，可用于TaN和Ta205薄膜的CVD和ALD

    公开(公告)号：US07750173B2

    公开(公告)日：2010-07-06

    申请号：US12013433

    申请日：2008-01-12

    申请人： Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum

    发明人： Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum

    IPC分类号： C07F9/00 ,  C01G35/00

    CPC分类号： C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.

    摘要翻译： 公开了式I的钽化合物，其用作形成含钽膜如阻挡层的前体。 可以通过CVD或ALD沉积式I的钽化合物以形成包括电介质层，电介质层上的阻挡层和阻挡层上的铜金属化的半导体器件结构，其中阻挡层包括含Ta层 和足够的碳，使得含Ta层是无定形的。 根据一个实施例，半导体器件结构通过CVD或ALD从包含式I的钽化合物的前体在低于约400℃的还原或惰性的沉积中制备 气氛，例如任选地含有还原剂的气体或等离子体。

    PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS
    57.
    发明申请
    PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS 有权
    用于原子层沉积和钛酸盐，钛酸盐和钛酸盐电介质膜的化学气相沉积的前体组合物

    公开(公告)号：US20100062150A1

    公开(公告)日：2010-03-11

    申请号：US12619165

    申请日：2009-11-16

    申请人： Chongying Xu ,  Tianniu Chen ,  Thomas M. Cameron ,  Jeffrey F. Roeder ,  Thomas H. Baum

    发明人： Chongying Xu ,  Tianniu Chen ,  Thomas M. Cameron ,  Jeffrey F. Roeder ,  Thomas H. Baum

    IPC分类号： B05D5/12

    CPC分类号： C23C14/088 ,  C07F17/00 ,  C23C16/409 ,  C23C16/45553

    摘要： Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

    摘要翻译： 用于钛酸盐薄膜的原子层沉积（ALD）和化学气相沉积（CVD）的钡，锶，钽和镧前体组合物。 前体具有式M（Cp）2，其中M是锶，钡，钽或镧，Cp是环戊二烯基，其中R 1 -R 5各自彼此相同或不同，各自独立地 选自氢，C1-C12烷基，C1-C12氨基，C6-C10芳基，C1-C12烷氧基，C3-C6烷基甲硅烷基，C2-C12烯基，R1R2R3NNR3，其中R1，R2和R3可以相同或不同 并且各自独立地选自氢和C 1 -C 6烷基，以及包括提供与金属中心M进一步配位的官能团的侧链配体。上式的前体可用于实现高介电常数的均匀涂布 材料制造闪存等微电子器件。

    PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS
    59.
    发明申请
    PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS 有权
    用于原子层沉积和钛酸盐，钛酸盐和钛酸盐电介质膜的化学气相沉积的前体组合物

    公开(公告)号：US20090074965A1

    公开(公告)日：2009-03-19

    申请号：US12282511

    申请日：2007-03-12

    申请人： Chongying Xu ,  Tianniu Chen ,  Thomas M. Cameron ,  Jeffrey F. Roeder ,  Thomas H. Baum

    发明人： Chongying Xu ,  Tianniu Chen ,  Thomas M. Cameron ,  Jeffrey F. Roeder ,  Thomas H. Baum

    IPC分类号： C23C16/44 ,  C09D7/12 ,  C07F3/00

    CPC分类号： C23C14/088 ,  C07F17/00 ,  C23C16/409 ,  C23C16/45553

    摘要： Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula (I), wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

    摘要翻译： 用于钛酸盐薄膜的原子层沉积（ALD）和化学气相沉积（CVD）的钡，锶，钽和镧前体组合物。 前体具有式（I）的式M（Cp）2，其中M是锶，钡，钽或镧，Cp是环戊二烯基，其中R 1 -R 5各自彼此相同或不同， 其中每个独立地选自氢，C 1 -C 12烷基，C 1 -C 12氨基，C 6 -C 10芳基，C 1 -C 12烷氧基，C 3 -C 6烷基甲硅烷基，C 2 -C 12烯基，R 1 R 2 R 3 N NR 3，其中R 1，R 2和R 3可以是 彼此相同或不同，并且各自独立地选自氢和C 1 -C 6烷基，以及包括提供与金属中心M进一步配位的官能团的侧链配体。上式的前体可用于实现均匀涂布 的高介电常数材料制造闪存和其他微电子器件。

    TANTALUM AMIDO-COMPLEXES WITH CHELATE LIGANDS USEFUL FOR CVD AND ALD OF TaN AND Ta205 THIN FILMS
    60.
    发明申请
    TANTALUM AMIDO-COMPLEXES WITH CHELATE LIGANDS USEFUL FOR CVD AND ALD OF TaN AND Ta205 THIN FILMS 有权
    具有适用于TaN和Ta205薄膜的CVD和ALD的CHATEAL配体的TANTALUM AMIDO复合物

    公开(公告)号：US20090032952A1

    公开(公告)日：2009-02-05

    申请号：US12013433

    申请日：2008-01-12

    申请人： Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum

    发明人： Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum

    IPC分类号： H01L23/532

    CPC分类号： C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.

    摘要翻译： 公开了式I的钽化合物，其用作形成含钽膜如阻挡层的前体。 可以通过CVD或ALD沉积式I的钽化合物以形成包括电介质层，电介质层上的阻挡层和阻挡层上的铜金属化的半导体器件结构，其中阻挡层包括含Ta层 和足够的碳，使得含Ta层是无定形的。 根据一个实施例，半导体器件结构通过CVD或ALD从包含式I的钽化合物的前体在低于约400℃的还原或惰性的沉积中制备 气氛，例如任选地含有还原剂的气体或等离子体。