ENZYMATIC PRODUCTION OF FATTY ACID ETHYL ESTERS
    51.
    发明申请
    ENZYMATIC PRODUCTION OF FATTY ACID ETHYL ESTERS 审中-公开
    脂肪酸乙酯的生产

    公开(公告)号:US20110219675A1

    公开(公告)日:2011-09-15

    申请号:US13125189

    申请日:2009-10-29

    IPC分类号: C10L1/02 C12P7/64

    CPC分类号: C12P7/649 Y02E50/13

    摘要: The invention relates to a method of producing fatty acid ethyl esters comprising: a) reacting a substrate comprising triglycerides, diglycerides, monoglycerides, free fatty acids, or any combination thereof, with at least one immobilized lipolytenzyme, to provide a reaction mixture wherein the enzyme loading is below 30% w/w with respect to the substrate, and the molar ratio of ethanol to fatty acid (EtOH:FA) is at least 3.0 equivalents; b) separating the immobilized lipolytic enzyme from the resulting reaction mixture; and c) subjecting the immobilized lipolytic enzyme to at least one further reaction directly without modifications.

    摘要翻译: 本发明涉及一种生产脂肪酸乙酯的方法,包括:a)使包含甘油三酯,甘油二酯,甘油单酯,游离脂肪酸或其任何组合的底物与至少一种固定化的脂解酶进行反应,以提供反应混合物,其中所述酶 载体相对于底物低于30%w / w,乙醇与脂肪酸(EtOH:FA)的摩尔比为至少3.0当量; b)从所得反应混合物中分离固定化的脂肪分解酶; 和c)直接将固定化的脂肪分解酶进行至少一种其他反应而无需修改。

    RESIST ADHENSION TO CARBON OVERCOATS FOR NANOIMPRINT LITHOGRAPHY
    52.
    发明申请
    RESIST ADHENSION TO CARBON OVERCOATS FOR NANOIMPRINT LITHOGRAPHY 审中-公开
    碳纳米尺度对碳纳米管的耐蚀性

    公开(公告)号:US20110195276A1

    公开(公告)日:2011-08-11

    申请号:US12703887

    申请日:2010-02-11

    IPC分类号: G11B5/702 B05D5/08 B05D3/12

    摘要: In an imprint lithography process, a carbon overcoat (COC) layer has nitrogen introduced into an upper surface region thereof before application of an adhesion layer to the COC/substrate combination. This results in the formation of a thin layer of nitrogenated carbon at the surface of the COC layer that promotes covalent bonding with the functional groups of the adhesion layer and, thus, significantly improves resist adhesion upon imprint template removal. Thus, an embodiment of an imprint lithography method comprises introducing nitrogen into an upper surface region of the COC layer, forming an adhesion layer on the nitrogenated COC layer, forming resist on the adhesion layer, contacting the resist with an imprint template having patterned features formed therein such that the resist fills the patterned features of the imprint template, and separating the imprint template from the resist such that a negative image of the patterned features is formed in the resist. An embodiment of an imprint structure comprises a substrate, a COC layer formed on the substrate, the COC layer having a nitrogenated upper surface region formed therein, and adhesion layer formed on the COC layer, and resist formed on the adhesion layer.

    摘要翻译: 在压印光刻工艺中,在向COC /衬底组合施加粘附层之前,碳覆盖层(COC)层将氮气引入其上表面区域。 这导致在COC层的表面上形成薄层的氮化碳,其促进与粘合层的官能团的共价键,并且因此显着提高印模模板去除时的抗附着力。 因此,压印光刻方法的一个实施例包括将氮气引入COC层的上表面区域,在氮化COC层上形成粘合层,在粘合层上形成抗蚀剂,使抗蚀剂与形成图案的特征的印模模板接触 其中抗蚀剂填充压印模板的图案化特征,以及将印​​模模板与抗蚀剂分离,使得图案特征的负像形成在抗蚀剂中。 压印结构的实施例包括基板,形成在基板上的COC层,其中形成有氮化的上表面区域的COC层和形成在COC层上的粘合层,以及形成在粘合层上的抗蚀剂。

    P channel radhard device with boron diffused P-type polysilicon gate
    56.
    发明授权
    P channel radhard device with boron diffused P-type polysilicon gate 有权
    具有硼扩散P型多晶硅栅极的P通道Radhard器件

    公开(公告)号:US07569901B1

    公开(公告)日:2009-08-04

    申请号:US09691083

    申请日:2000-10-18

    IPC分类号: H01L21/336

    摘要: A MOS gated device is resistant to both high radiation and SEE environments. Spaced, N-type body regions are formed in the surface of a P-type substrate of a semiconductor wafer. P-type dopants are introduced into the surface within each of the channel regions to form respective source regions therein. The periphery of each of the source regions is spaced from the periphery of its respective channel region at the surface to define N-type channel regions between the spaced peripheries. A layer of gate oxide is formed over the channel areas. A doped polysilicon gate electrode is formed atop the gate oxide. A source electrode is formed atop the source regions. The MOS gated device is optimized to maintain a threshold voltage of between −2V to −5V for a total irradiation dose of 300 Krad while maintaining SEE withstand capability.

    摘要翻译: MOS门控器件能够抵抗高辐射和SEE环境。 在半导体晶片的P型基板的表面形成间隔的N型体区域。 P型掺杂剂被引入到每个沟道区域内的表面中以在其中形成相应的源区。 每个源极区域的周边与其相应沟道区域的周边在表面处间隔开,以在间隔开的周边之间限定N型沟道区域。 在通道区域上形成一层栅极氧化物。 掺杂的多晶硅栅电极形成在栅极氧化物的顶部。 源极电极形成在源极区域的顶部。 MOS门控器件经过优化,可以在总抗辐射剂量为300克拉德的同时保持SEE耐受能力,维持-2V至-5V之间的阈值电压。

    Method And Apparatus For Forming Microstructures
    57.
    发明申请
    Method And Apparatus For Forming Microstructures 审中-公开
    用于形成微结构的方法和装置

    公开(公告)号:US20080307849A1

    公开(公告)日:2008-12-18

    申请号:US11791567

    申请日:2004-11-26

    摘要: A method of micro forming an array of microstructures comprising: advancing a punch having an array of protrusions (620) towards a sheet of material (640) disposed between the punch (620) and a die (630), each protrusion (625) shaped to deform the sheet of material (640) into a corresponding microstructure; providing a holder for holding the sheet of material (640) in place; and punching the sheet of material (640) with the protrusions on the punch (620) to form the array of microstructures on the sheet of material (640).

    摘要翻译: 一种微观形成微结构阵列的方法,其特征在于,包括:朝向设置在冲头(620)和模具(630)之间的材料片(640)前进具有突起阵列(620)的冲头,每个凸起(625)成形 使所述材料片(640)变形成相应的微结构; 提供用于将材料片(640)保持在适当位置的保持器; 以及用所述冲头(620)上的突起冲压所述材料片(640)以在所述材料片(640)上形成所述微结构阵列。

    Method and Device of Reconstructing an (N+1)-Dimensional Image Function from Radon Data
    58.
    发明申请
    Method and Device of Reconstructing an (N+1)-Dimensional Image Function from Radon Data 有权
    从氡数据重建(N + 1)维图像函数的方法和装置

    公开(公告)号:US20080130974A1

    公开(公告)日:2008-06-05

    申请号:US11794558

    申请日:2005-12-21

    IPC分类号: G06K9/00 G06K9/36

    摘要: A method of reconstructing an (n+1)-dimensional image function ƒ representing a region of investigation comprises determining the image function ƒ from n-dimensional or less dimensional Radon data comprising a plurality of projection functions pθ(t) measured corresponding to a plurality of predetermined projection directions (Θ), wherein the image function ƒ is determined as a sum of polynomials multiplied with values of the projection functions pθ(t). Imaging methods, imaging devices, and computer tomography devices using this reconstruction method are described.

    摘要翻译: 重建表示调查区域的(n + 1)维图像函数f的方法包括从n维或更小尺寸的Radon数据确定包括多个投影函数p < (t)对应于多个预定投影方向(Theta)测量,其中图像函数f被确定为与投影函数pθθ(t)的值相乘的多项式的和。 描述使用该重建方法的成像方法,成像装置和计算机断层摄影装置。

    Silicone hydrogel contact lenses
    60.
    发明授权
    Silicone hydrogel contact lenses 有权
    硅胶水凝胶隐形眼镜

    公开(公告)号:US09057822B2

    公开(公告)日:2015-06-16

    申请号:US13983774

    申请日:2012-02-23

    摘要: Silicone hydrogel contact lenses that are derived from a polymerizable composition including a first siloxane monomer represented by formula (3): wherein m of formula (3) represents one integer from 3 to 10, n of formula (3) represents one integer from 1 to 10, R1 of formula (3) is an alkyl group having from 1 to 4 carbon atoms, and each R2 of formula (3) is independently either a hydrogen atom or a methyl group; and at least one vinyl ether-containing cross-linking agent are described. Batches of silicone hydrogel contact lenses and methods of making silicone hydrogel contact lenses are also described. In one example, the batches of silicone hydrogel contact lenses are dimensionally stable, and the method of making is a method of making dimensionally stable silicone hydrogel contact lenses.

    摘要翻译: 衍生自包含由式(3)表示的第一硅氧烷单体的可聚合组合物的聚合性组合物的硅氧水凝胶隐形眼镜:式(3)的m表示3〜10的整数,式(3)的n表示1〜 10,式(3)的R 1为碳原子数1〜4的烷基,式(3)的各R 2独立地为氢原子或甲基。 和至少一种含乙烯基醚的交联剂。 还描述了硅胶水凝胶隐形眼镜的批次和制造硅酮水凝胶隐形眼镜的方法。 在一个示例中,硅胶水凝胶隐形眼镜的批次是尺寸稳定的,并且制造方法是制备尺寸稳定的硅酮水凝胶隐形眼镜的方法。