公开(公告)号：US4574095A

公开(公告)日：1986-03-04

申请号：US672975

申请日：1984-11-19

申请人： Thomas H. Baum ,  Frances A. Houle ,  Carol R. Jones ,  Caroline A. Kovac

发明人： Thomas H. Baum ,  Frances A. Houle ,  Carol R. Jones ,  Caroline A. Kovac

IPC分类号： C23C18/16 ,  C23C18/18 ,  C23C18/20 ,  C23C18/30 ,  C23C18/31 ,  H05K3/18 ,  B05D3/06 ,  B05D5/12

CPC分类号： C23C18/1879 ,  C23C18/1608 ,  C23C18/1612 ,  C23C18/182 ,  C23C18/1831 ,  C23C18/1868 ,  C23C18/204 ,  C23C18/30 ,  C23C18/38 ,  H05K3/184 ,  H05K2203/107

摘要： A process for selectively depositing copper by first selectively depositing palladium seeds by irradiating a palladium compound with light. Following the deposition of the palladium seeds, copper is deposited by an electroless process.

摘要翻译： 一种选择性沉积铜的方法，首先通过用光照射钯化合物来选择性地沉积钯种子。 在钯种子沉积之后，通过无电镀方法沉积铜。

公开(公告)号：US20140234436A1

公开(公告)日：2014-08-21

申请号：US14240404

申请日：2012-06-12

申请人： James V. McManus ,  Edward A. Sturm ,  Thomas H. Baum ,  J. Donald Carruthers ,  Joshua B. Sweeney

发明人： James V. McManus ,  Edward A. Sturm ,  Thomas H. Baum ,  J. Donald Carruthers ,  Joshua B. Sweeney

IPC分类号： A01N59/26 ,  A01M13/00

CPC分类号： A01N59/26 ,  A01M13/00 ,  B01J20/08 ,  B01J20/103 ,  B01J20/18 ,  B01J20/20 ,  B01J20/28011 ,  B01J20/28066 ,  C01B25/06 ,  A01N25/08 ,  A01N25/18

摘要： A system and process for generating and packaging phosphine gas, in which the process includes: reacting water and aluminum phosphide to generate phosphine, and providing the phosphine in a gas mixture at a phosphine concentration below a lower explosive limit; adsorptively removing phosphine from the gas mixture; and packaging the removed phosphine in a fluid storage and dispensing vessel.

摘要翻译： 一种用于产生和包装磷化氢气体的系统和方法，其中该方法包括：使水和磷化铝磷化氢反应生成磷化氢，并在低于爆炸下限的磷化氢浓度的气体混合物中提供磷化氢; 从气体混合物中吸附去除磷化氢; 并将去除的磷化氢包装在流体储存和分配容器中。

公开(公告)号：US08679894B2

公开(公告)日：2014-03-25

申请号：US13610928

申请日：2012-09-12

申请人： Jeffrey F. Roeder ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Gregory T. Stauf ,  Chongying Xu ,  William Hunks ,  Tianniu Chen ,  Matthias Stender

发明人： Jeffrey F. Roeder ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Gregory T. Stauf ,  Chongying Xu ,  William Hunks ,  Tianniu Chen ,  Matthias Stender

IPC分类号： H01L51/40

CPC分类号： H01L51/0002 ,  C07F7/30 ,  C23C16/305 ,  C23C16/45553

摘要： A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

公开(公告)号：US08501976B2

公开(公告)日：2013-08-06

申请号：US12978393

申请日：2010-12-23

申请人： Thomas H. Baum

发明人： Thomas H. Baum

IPC分类号： C07C49/92

CPC分类号： C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

公开(公告)号：US20130125999A1

公开(公告)日：2013-05-23

申请号：US13704612

申请日：2011-06-18

申请人： Joseph D. Sweeney ,  Anthony M. Avila ,  Michael J. Wodjenski ,  Joseph R. Despres ,  Thomas H. Baum

发明人： Joseph D. Sweeney ,  Anthony M. Avila ,  Michael J. Wodjenski ,  Joseph R. Despres ,  Thomas H. Baum

IPC分类号： F17D3/00

CPC分类号： F17D3/01 ,  F17D3/00 ,  G05D7/0635 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/30466 ,  H01L21/67017 ,  H01L21/67253 ,  Y10T137/0324 ,  Y10T137/86389

摘要： Apparatus and method for determining endpoint of a fluid supply vessel in which fluid flow is controlled through a flow passage disposed in an interior volume of the fluid supply vessel with a static flow restricting device and a selectively actuatable valve element upon establishing fluid flow. The endpoint determination can be employed to terminate fluid supply from the fluid supply vessel and/or to switch from a fluid-depleted supply vessel to a fresh vessel for continuity or renewal of fluid supply operation. The apparatus and method are suitable for use with fluidutilizing apparatus such as ion implanters.

摘要翻译： 用于确定流体供应容器的端点的装置和方法，其中通过设置在流体供应容器的内部容积中的流动通道具有静态流动限制装置和在建立流体流动时可选择性致动的阀元件来控制流体流动。 端点确定可以用于终止从流体供应容器供应的流体和/或从流体耗尽的供应容器切换到新鲜的容器，以便连续或更新流体供应操作。 该设备和方法适用于离子注入机等流体化处理装置。

公开(公告)号：US20130005078A1

公开(公告)日：2013-01-03

申请号：US13610928

申请日：2012-09-12

申请人： Jeffrey F. Roeder ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Gregory T. Stauf ,  Chongying Xu ,  William Hunks ,  Tianniu Chen ,  Matthias Stender

发明人： Jeffrey F. Roeder ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Gregory T. Stauf ,  Chongying Xu ,  William Hunks ,  Tianniu Chen ,  Matthias Stender

IPC分类号： H01L51/30

CPC分类号： H01L51/0002 ,  C07F7/30 ,  C23C16/305 ,  C23C16/45553

摘要： A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C., with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

摘要翻译： 在基板上形成相变记忆材料的系统和方法，其中在温度低于350℃的条件下，在产生硫属元素化合物的沉积的条件下，在相变存储硫族化合物的前体与基板接触的基板上， 其接触通过化学气相沉积或原子层沉积进行。 描述了各种碲，锗和锗 - 碲前体，其可用于在基底上形成GST相变记忆膜。

公开(公告)号：US08288198B2

公开(公告)日：2012-10-16

申请号：US12300459

申请日：2007-03-12

申请人： Jeffrey F. Roeder ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Gregory T. Stauf ,  Chongying Xu ,  William Hunks ,  Tianniu Chen ,  Matthias Stender

发明人： Jeffrey F. Roeder ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Gregory T. Stauf ,  Chongying Xu ,  William Hunks ,  Tianniu Chen ,  Matthias Stender

IPC分类号： H01L51/40

CPC分类号： H01L51/0002 ,  C07F7/30 ,  C23C16/305 ,  C23C16/45553

摘要： A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C. with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

摘要翻译： 一种用于在基板上形成相变记忆材料的系统和方法，其中在温度低于350℃的条件下，在产生硫属化物合金沉积的条件下，在温度低于350℃的条件下，基板与相变存储器硫族化合物的前体接触， 通过化学气相沉积或原子层沉积进行接触。 描述了各种碲，锗和锗 - 碲前体，其可用于在基底上形成GST相变记忆膜。

公开(公告)号：US20120138631A1

公开(公告)日：2012-06-07

申请号：US13375462

申请日：2010-06-08

申请人： Steven M. Lurcott ,  John E.Q. Hughes ,  Peter Wrschka ,  Thomas H. Baum ,  Donald D. Ware ,  Peng Zou

发明人： Steven M. Lurcott ,  John E.Q. Hughes ,  Peter Wrschka ,  Thomas H. Baum ,  Donald D. Ware ,  Peng Zou

IPC分类号： B67D7/72 ,  B67D7/08 ,  B67D7/74 ,  B65B3/14 ,  B65B3/16

CPC分类号： B01F15/0203 ,  B01F3/0861 ,  B01F15/0258 ,  B01F2003/0896 ,  B65B3/14 ,  B67D7/025 ,  B67D7/0261 ,  B67D7/0283 ,  B67D7/741

摘要： Systems and methods for delivering fluid-containing feed materials to process equipment are disclosed. A liner-based pressure dispensing vessel is subjected to filling by application of vacuum between the liner and overpack. Multiple feed material flow controllers of different calibrated flow ranges may be selectively operated in parallel for a single feed material. Feed material blending and testing for scale-up may be performed with feed materials supplied by multiple liner-based pressure dispensing containers. A gravimetric system may be used to determine concentration of at least one component of a multi-component solution or mixture.

摘要翻译： 公开了用于将含流体的进料传送到加工设备的系统和方法。 基于衬管的压力分配容器通过在衬套和外包装之间施加真空而进行填充。 不同校准流量范围的多个进料流量控制器可以针对单个进料进行选择性并行操作。 用于放大的进料混合和测试可以通过由多个基于衬管的压力分配容器供应的进料进行。 重量分析系统可用于测定多组分溶液或混合物中至少一种组分的浓度。

公开(公告)号：US20120131990A1

公开(公告)日：2012-05-31

申请号：US13381332

申请日：2010-06-23

申请人： Thomas H. Baum ,  Ing-Shin Barry Chen ,  Richard D. Chism

发明人： Thomas H. Baum ,  Ing-Shin Barry Chen ,  Richard D. Chism

IPC分类号： G01N11/00

CPC分类号： G01D11/245

摘要： A fluid monitoring apparatus, including a circuitry housing containing circuitry for processing fluid sensing signals and responsively transmitting an output, with a sensor assembly adapted for mechanical and electrical coupling to the circuitry housing. The sensor assembly includes at least one sensing member arranged to respond to a fluid species of interest in the monitored fluid, for generation of an output. The apparatus includes at least one of (A) a printed circuit board adapted to engage the circuitry housing and to mechanically couple to the sensor assembly, (B) the sensor assembly including a base and sensing element removably connected to the base by press-fit coupling elements, and (C) the sensor assembly including a base and a sensing filament connected thereto, and a filament guard to protectively circumscribe the sensing filament.

摘要翻译： 一种流体监测装置，包括用于处理流体感测信号并且响应地传输输出的电路壳体，其具有适于机械和电耦合到电路壳体的传感器组件。 传感器组件包括至少一个感测构件，其被布置成响应被监视流体中感兴趣的流体种类，以产生输出。 该装置包括以下中的至少一个：（A）适于接合电路外壳并机械地耦合到传感器组件的印刷电路板中的至少一个;（B）传感器组件，包括基座和感测元件，该基座和感测元件通过压配合可移除地连接到基座 耦合元件，和（C）传感器组件，其包括基座和连接到其上的感测灯丝，以及灯丝防护罩，用于保护地围绕感测灯丝。

公开(公告)号：US20110263100A1

公开(公告)日：2011-10-27

申请号：US13168979

申请日：2011-06-26

申请人： William Hunks ,  Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum ,  Matthias Stender ,  Philip S.H. Chen ,  Gregory T. Stauf ,  Bryan C. Hendrix

发明人： William Hunks ,  Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum ,  Matthias Stender ,  Philip S.H. Chen ,  Gregory T. Stauf ,  Bryan C. Hendrix

IPC分类号： H01L21/208

CPC分类号： H01L45/1616 ,  C07C251/08 ,  C07F7/003 ,  C07F7/10 ,  C07F7/28 ,  C07F9/90 ,  C07F9/902 ,  C07F17/00 ,  C23C16/18 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

摘要： Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

摘要翻译： 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这些前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。