公开(公告)号：US20120131990A1

公开(公告)日：2012-05-31

申请号：US13381332

申请日：2010-06-23

申请人： Thomas H. Baum ,  Ing-Shin Barry Chen ,  Richard D. Chism

发明人： Thomas H. Baum ,  Ing-Shin Barry Chen ,  Richard D. Chism

IPC分类号： G01N11/00

CPC分类号： G01D11/245

摘要： A fluid monitoring apparatus, including a circuitry housing containing circuitry for processing fluid sensing signals and responsively transmitting an output, with a sensor assembly adapted for mechanical and electrical coupling to the circuitry housing. The sensor assembly includes at least one sensing member arranged to respond to a fluid species of interest in the monitored fluid, for generation of an output. The apparatus includes at least one of (A) a printed circuit board adapted to engage the circuitry housing and to mechanically couple to the sensor assembly, (B) the sensor assembly including a base and sensing element removably connected to the base by press-fit coupling elements, and (C) the sensor assembly including a base and a sensing filament connected thereto, and a filament guard to protectively circumscribe the sensing filament.

摘要翻译： 一种流体监测装置，包括用于处理流体感测信号并且响应地传输输出的电路壳体，其具有适于机械和电耦合到电路壳体的传感器组件。 传感器组件包括至少一个感测构件，其被布置成响应被监视流体中感兴趣的流体种类，以产生输出。 该装置包括以下中的至少一个：（A）适于接合电路外壳并机械地耦合到传感器组件的印刷电路板中的至少一个;（B）传感器组件，包括基座和感测元件，该基座和感测元件通过压配合可移除地连接到基座 耦合元件，和（C）传感器组件，其包括基座和连接到其上的感测灯丝，以及灯丝防护罩，用于保护地围绕感测灯丝。

公开(公告)号：US09134146B2

公开(公告)日：2015-09-15

申请号：US13381332

申请日：2010-06-23

申请人： Thomas H. Baum ,  Ing-Shin Barry Chen ,  Richard D. Chism

发明人： Thomas H. Baum ,  Ing-Shin Barry Chen ,  Richard D. Chism

IPC分类号： G01D11/24

CPC分类号： G01D11/245

摘要： A fluid monitoring apparatus, including a circuitry housing containing circuitry for processing fluid sensing signals and responsively transmitting an output, with a sensor assembly adapted for mechanical and electrical coupling to the circuitry housing. The sensor assembly includes at least one sensing member arranged to respond to a fluid species of interest in the monitored fluid, for generation of an output. The apparatus includes at least one of (A) a printed circuit board adapted to engage the circuitry housing and to mechanically couple to the sensor assembly, (B) the sensor assembly including a base and sensing element removably connected to the base by press-fit coupling elements, and (C) the sensor assembly including a base and a sensing filament connected thereto, and a filament guard to protectively circumscribe the sensing filament.

摘要翻译： 一种流体监测装置，包括用于处理流体感测信号并且响应地传输输出的电路壳体，其具有适于机械和电耦合到电路壳体的传感器组件。 传感器组件包括至少一个感测构件，其被布置成响应被监视流体中感兴趣的流体种类，以产生输出。 该装置包括以下中的至少一个：（A）适于接合电路外壳并机械地耦合到传感器组件的印刷电路板中的至少一个;（B）传感器组件，包括基座和感测元件，该基座和感测元件通过压配合可移除地连接到基座 耦合元件，和（C）传感器组件，其包括基座和连接到其上的感测灯丝，以及灯丝防护罩，用于保护地围绕感测灯丝。

公开(公告)号：US08802882B2

公开(公告)日：2014-08-12

申请号：US12862739

申请日：2010-08-24

申请人： Ziyun Wang ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Tianniu Chen ,  Thomas H. Baum

发明人： Ziyun Wang ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Tianniu Chen ,  Thomas H. Baum

IPC分类号： C07F7/10

CPC分类号： C07F7/10 ,  H01L21/02271

摘要： Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,

摘要翻译： 在制造半导体器件（例如包括碳氮化硅，碳氮化硅和氮化硅（Si 3 N 4）的薄膜）的制造中的硅前体，以及使用低温（例如，550℃）将硅前体沉积在衬底上的方法 ℃）化学气相沉积工艺，用于制造ULSI器件和器件结构。

公开(公告)号：US08541318B2

公开(公告)日：2013-09-24

申请号：US13369810

申请日：2012-02-09

申请人： Ziyun Wang ,  Chongying Xu ,  Thomas H. Baum

发明人： Ziyun Wang ,  Chongying Xu ,  Thomas H. Baum

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C07F7/10

摘要： This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g.,

公开(公告)号：US20120267388A1

公开(公告)日：2012-10-25

申请号：US13382743

申请日：2010-07-09

申请人： Glenn Tom ,  Thomas H. Baum ,  Matt Kusz ,  Joseph Menning ,  Greg Nelson ,  Dongyun Lee ,  Wei Liu ,  Kanghyun Kim ,  Karl Boggs ,  Richard Chism

发明人： Glenn Tom ,  Thomas H. Baum ,  Matt Kusz ,  Joseph Menning ,  Greg Nelson ,  Dongyun Lee ,  Wei Liu ,  Kanghyun Kim ,  Karl Boggs ,  Richard Chism

IPC分类号： B65D1/40 ,  B65D83/00 ,  B65D35/28 ,  B67D7/78

CPC分类号： B65D83/0055 ,  B05B7/241 ,  B05B11/00412 ,  B05B11/30 ,  B29C49/04 ,  B29C49/06 ,  B29L2023/006 ,  B65D35/02 ,  B65D77/06 ,  B65D77/065 ,  B65D83/60 ,  B65D83/62 ,  B65D2231/001 ,  B65D2231/004 ,  B65D2231/008

摘要： The present disclosure relates to a blow-molded, rigid collapsible liner that can be suitable particularly for smaller storage and dispensing systems. The rigid collapsible liner may be a stand-alone liner, e.g., used without an outer container, and may be dispensed from a fixed pressure dispensing can. Folds in the rigid collapsible liner may be substantially eliminated, thereby substantially reducing or eliminating the problems associated with pinholes, weld tears, and overflow. The present disclosure also relates to flexible gusseted or non-gusseted liners, which is scalable in size and may be used for storage of up to 200 L or more. The flexible gusseted liner may be foldable, such that the liner can be introduced into a dispensing can. The liner can be made of thicker materials, substantially reducing or eliminating the problems associated pinholes, and may include more robust welds, substantially reducing or eliminating the problems associated weld tears.

摘要翻译： 本发明涉及吹塑成型的刚性可折叠衬里，其特别适用于较小的储存和分配系统。 刚性可折叠内衬可以是独立的衬垫，例如在没有外部容器的情况下使用，并且可以从固定的压力分配罐分配。 可以基本上消除刚性可折叠衬里中的折叠，从而基本上减少或消除与针孔，焊缝和溢流相关的问题。 本公开还涉及柔性角撑板或非角撑板衬垫，其可尺寸可缩放并且可用于高达200L或更高的存储。 柔性角撑板衬垫可以是可折叠的，使得衬里可以被引入到分配罐中。 衬里可以由更厚的材料制成，大大减少或消除与针孔相关的问题，并且可以包括更坚固的焊缝，大大减少或消除与焊缝相关的问题。

公开(公告)号：US08236485B2

公开(公告)日：2012-08-07

申请号：US10389214

申请日：2003-03-14

申请人： David W. Minsek ,  Melissa K. Murphy ,  David Daniel Bernhard ,  Thomas H. Baum

发明人： David W. Minsek ,  Melissa K. Murphy ,  David Daniel Bernhard ,  Thomas H. Baum

IPC分类号： G03F7/42 ,  B08B3/04

CPC分类号： C11D3/30 ,  C11D1/72 ,  C11D3/044 ,  C11D3/3947 ,  C11D3/3955 ,  C11D3/3956 ,  C11D3/43 ,  C11D7/06 ,  C11D7/3209 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/50 ,  C11D11/0047 ,  C23G1/20 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/31116 ,  H01L21/31133 ,  Y10S438/906

摘要： Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist.

摘要翻译： 本文公开了一种用于半导体处理的组合物和方法。 在一个实施方案中，提供了用于去除光致抗蚀剂的湿清洁组合物。 组合物包含强碱; 氧化剂 和极性溶剂。 在另一个实施例中，提供了一种去除光致抗蚀剂的方法。 该方法包括以下步骤：施加包含约0.1至约30重量％的强碱的湿清洁组合物; 约1至约30重量％的氧化剂; 约20至约95重量％的极性溶剂; 并去除光致抗蚀剂。

公开(公告)号：US07887883B2

公开(公告)日：2011-02-15

申请号：US12777519

申请日：2010-05-11

申请人： Ziyun Wang ,  Chongying Xu ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Jeffrey F. Roeder

发明人： Ziyun Wang ,  Chongying Xu ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Jeffrey F. Roeder

IPC分类号： C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C07F7/02

CPC分类号： H01L21/0217 ,  C07F7/025 ,  C07F7/10 ,  C07F7/12 ,  C23C16/308 ,  C23C16/345 ,  C23C16/402 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/31612 ,  H01L21/3185

摘要： This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g.,

摘要翻译： 本发明涉及通过用于制造ULSI器件和器件结构的低温（例如，<300℃）的化学气相沉积工艺形成含硅膜的硅前体组合物。 这种硅前体组合物包含至少一个完全被烷基氨基和/或二烷基氨基官能团取代的二烷基硅烷衍生物化合物。

公开(公告)号：US07862857B2

公开(公告)日：2011-01-04

申请号：US12768374

申请日：2010-04-27

申请人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

发明人： Peter C. Van Buskirk ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Michael W. Russell ,  Stephen T. Johnston ,  Daniel J. Vestyck ,  Thomas H. Baum

IPC分类号： C23C16/40 ,  H01L21/02 ,  H01G4/10

CPC分类号： C07C49/92 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/963 ,  C07F7/003 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55

摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15μm。 在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。

公开(公告)号：US07858816B2

公开(公告)日：2010-12-28

申请号：US12790835

申请日：2010-05-30

申请人： Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum

发明人： Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum

IPC分类号： C07F9/00

CPC分类号： C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.

公开(公告)号：US20100240918A1

公开(公告)日：2010-09-23

申请号：US12790835

申请日：2010-05-30

申请人： Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum

发明人： Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum

IPC分类号： C07F9/00

CPC分类号： C23C16/18 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.

摘要翻译： 公开了式I的钽化合物，其用作形成含钽膜如阻挡层的前体。 可以通过CVD或ALD沉积式I的钽化合物以形成包括电介质层，电介质层上的阻挡层和阻挡层上的铜金属化的半导体器件结构，其中阻挡层包括含Ta层 和足够的碳，使得含Ta层是无定形的。 根据一个实施例，半导体器件结构通过CVD或ALD从包含式I的钽化合物的前体在低于约400℃的还原或惰性的沉积中制备 气氛，例如任选地含有还原剂的气体或等离子体。