公开(公告)号：US20050266355A1

公开(公告)日：2005-12-01

申请号：US11118316

申请日：2005-05-02

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano ,  Satoko Seta ,  Hirokazu Kato

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano ,  Satoko Seta ,  Hirokazu Kato

IPC分类号： G03F7/00 ,  G03F7/09 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/768

CPC分类号： G03F7/094 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76825 ,  H01L21/76835

摘要： Disclosed is a method of manufacturing a semiconductor device comprising forming an insulating film above a substrate, forming a recess in the insulating film, successively forming an underlying layer, an immediate layer and a resist film above the insulating film having the recess formed thereon, the underlying layer being formed by a process comprising forming a first organic film above the insulating film, chemically mechanically polishing the first organic film to expose a surface of the insulating film and to remain the first organic film selectively in the recess, and forming a second organic film above the insulating film and above the first organic film, and subjecting the resist film to patterning exposure.

摘要翻译： 公开了一种制造半导体器件的方法，包括在衬底上形成绝缘膜，在绝缘膜中形成凹陷，在其上形成有凹部的绝缘膜上依次形成下层，立即层和抗蚀剂膜， 通过包括在绝缘膜上形成第一有机膜的方法形成下层，对第一有机膜进行化学机械抛光以暴露绝缘膜的表面，并在第一有机膜中选择性地保留第一有机膜，并形成第二有机膜 在绝缘膜之上和第一有机膜之上，并且对抗蚀剂膜进行图案曝光。

公开(公告)号：US07682975B2

公开(公告)日：2010-03-23

申请号：US11472462

申请日：2006-06-22

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： H01L21/461 ,  H01L21/4763

CPC分类号： H01L21/76829 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/7684

摘要： A semiconductor device fabricating method includes forming a thin film at a top surface of a substrate; polishing a back surface of said substrate; and after the polishing of the back surface, polishing said thin film as formed at the top surface of said substrate.

摘要翻译： 一种半导体器件制造方法，包括在衬底的顶表面上形成薄膜; 抛光所述衬底的背面; 并且在后表面的抛光之后，在所述基板的顶表面处形成所述薄膜。

公开(公告)号：US07402521B2

公开(公告)日：2008-07-22

申请号：US11418070

申请日：2006-05-05

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Atsushi Shigeta ,  Hiroyuki Yano

IPC分类号： H01L21/302

CPC分类号： H01L21/31058 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  H01L27/10867

摘要： There is proposed a polishing method. The method includes feeding a slurry onto a polishing pad, press-contacting a semiconductor substrate held on a polishing head with the polishing pad, the semiconductor substrate having an organic film thereon, and chemically mechanically polishing the organic film by repeating a sequence of rotation and halt of rotation of the polishing pad and the polishing head.

摘要翻译： 提出了抛光方法。 该方法包括将浆料进料到抛光垫上，将保持在抛光头上的半导体衬底与抛光垫压接，半导体衬底上具有有机膜，并通过重复旋转顺序化学机械抛光有机膜， 停止抛光垫和抛光头的旋转。

公开(公告)号：US20060293191A1

公开(公告)日：2006-12-28

申请号：US11472462

申请日：2006-06-22

申请人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Dai Fukushima ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： H01L39/24

CPC分类号： H01L21/76829 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/7684

摘要： A semiconductor device fabricating method includes forming a thin film at a top surface of a substrate; polishing a back surface of said substrate; and after the polishing of the back surface, polishing said thin film as formed at the top surface of said substrate.

摘要翻译： 一种半导体器件制造方法，包括在衬底的顶表面上形成薄膜; 抛光所述衬底的背面; 并且在后表面的抛光之后，在所述基板的顶表面处形成所述薄膜。

公开(公告)号：US07138073B2

公开(公告)日：2006-11-21

申请号：US10762514

申请日：2004-01-23

申请人： Gaku Minamihaba ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C23F3/00

摘要： A method of manufacturing a semiconductor device using a polishing slurry for CMP of Cu, which includes a first complexing agent containing a heterocyclic compound which is capable of forming a water-insoluble complex with Cu, and a second complexing agent containing a heterocyclic compound which is capable of forming a slightly water-soluble or water-soluble complex with Cu to thereby provide at least one extra ligand subsequent to formation of the complex.

摘要翻译： 使用Cu的CMP研磨用浆料的半导体装置的制造方法，其包括含有能够与Cu形成水不溶性络合物的杂环化合物的第一配位剂和含有杂环化合物的第二络合剂，所述杂环化合物为 能够与Cu形成轻微的水溶性或水溶性络合物，从而在形成络合物后提供至少一种额外的配体。

公开(公告)号：US07060621B2

公开(公告)日：2006-06-13

申请号：US10838261

申请日：2004-05-05

申请人： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d2, the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w2 by weight, wherein d1, d2, w1 and w2 are selected to concurrently meet following conditions (A) and (B) excluding situations where d1, d2, w1 and w2 concurrently meet following conditions (C) and (D): 3≦d2/d1≦8  (A) 0.7≦w1/(w1+w2)≦0.97  (B) 3≦d2/d1≦5  (C) 0.7≦w1/(w1+w2)≦0.9.  (D)

摘要翻译： 公开了一种CMP浆料，其包含一次粒径为5nm〜30nm，平均粒径为d 1的第一胶体粒子，第一胶体粒子的重量为w 1，第二胶体粒子 其第一粒径大于第一胶体粒子的一次粒径，平均粒径为d 2，第二胶体粒子由与第一胶体粒子相同的材料形成，w 2的重量比， 其中d 1，d 2，w 1和w 2同时满足以下条件（A）和（B），不包括d 1，d 2，w 1和w 2同时满足以下条件（C）和（D ）：<？in-line-formula description =“In-line Formulas”end =“lead”？> 3 <= d2 / d1 <= 8（A）<？in-line-formula description =“ “end =”tail“？> <？in-line-formula description =”In-line Formulas“end =”lead“？> 0.7 <= w1 /（w1 + w2）<= 0.97（B） line-formu lae description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 3 <= d2 / d1 <= 5（C） <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula”end =“lead”？> 0.7 <= w1 /（ w1 + w2）<= 0.9。 （D）<？in-line-formula description =“In-line Formulas”end =“tail”？>

公开(公告)号：US20050064796A1

公开(公告)日：2005-03-24

申请号：US10865818

申请日：2004-06-14

申请人： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

发明人： Gaku Minamihaba ,  Yukiteru Matsui ,  Hiroyuki Yano

IPC分类号： B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  B24B1/00

CPC分类号： C09G1/02 ,  B24B37/044

摘要： There is disclosed a polishing method comprising contacting a polishing surface of a semiconductor substrate with a polishing pad comprising a resin as a main component and attached to a turntable, and dropping a CMP slurry onto the polishing pad to polish the polishing surface, the CMP slurry comprising a resin particle, an inorganic particle, a polymerizable component, and a polymerization initiator.

摘要翻译： 公开了一种抛光方法，包括使半导体衬底的抛光表面与包括树脂作为主要组分并附着在转台上的抛光垫相接触，并将CMP浆料落在抛光垫上以抛光抛光表面，CMP浆料 包括树脂颗粒，无机颗粒，可聚合组分和聚合引发剂。

公开(公告)号：US20050009322A1

公开(公告)日：2005-01-13

申请号：US10909287

申请日：2004-08-03

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Hiroyuki Yano

IPC分类号： B24B37/00 ,  C09G1/02 ,  H01L21/02 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02074 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684

摘要： There is disclosed a CMP slurry which comprises a solvent, abrasive grains, and a silicone-based surfactant having an HLB value ranging from 7 to 20.

摘要翻译： 公开了一种CMP浆料，其包含溶剂，磨粒和HLB值为7至20的硅氧烷基表面活性剂。

公开(公告)号：US06611060B1

公开(公告)日：2003-08-26

申请号：US09677743

申请日：2000-10-03

申请人： Hiroshi Toyoda ,  Hiroyuki Yano ,  Gaku Minamihaba ,  Dai Fukushima ,  Tetsuo Matsuda ,  Hisashi Kaneko

发明人： Hiroshi Toyoda ,  Hiroyuki Yano ,  Gaku Minamihaba ,  Dai Fukushima ,  Tetsuo Matsuda ,  Hisashi Kaneko

IPC分类号： H01L2352

CPC分类号： H01L21/76846 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76819 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76849 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a cap film comprises a first polishing step of performing a polishing operation at selectivity of R1 (=removal rate for the cap film/removal rate for the insulating film), and a second polishing step of performing a polishing operation at selectivity of R2 (=removal rate for the cap film/removal rate for the insulating film). Each of the polishing operations is performed by using a slurry having the condition of R1>R2. By performing the polishing operations at different selectivity, the cap film free from problems such as dishing of the cap film and the residual cap film on side walls of a recess is formed. Consequently, a semiconductor device having an excellent RC characteristic can be provided.

摘要翻译： 形成盖膜的方法包括以R1的选择性（=绝缘膜的除去速率/绝缘膜的去除速率）进行抛光操作的第一抛光步骤，以及以选择性进行抛光操作的第二抛光步骤 的R2（=盖膜的去除率/绝缘膜的去除率）。 通过使用条件为R1> R2的浆料进行每次研磨操作。 通过以不同的选择性进行抛光操作，形成了帽膜没有诸如凹陷的盖膜和残留帽膜之间的问题。 因此，可以提供具有优异RC特性的半导体器件。

公开(公告)号：US07452819B2

公开(公告)日：2008-11-18

申请号：US10855529

申请日：2004-05-28

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

IPC分类号： H01L21/302

CPC分类号： H01L21/76808 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L27/10867

摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.

摘要翻译： 公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光 所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒 官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm和具有亲水部分的表面活性剂。