公开(公告)号：US07801101B2

公开(公告)日：2010-09-21

申请号：US10892679

申请日：2004-07-15

申请人： Minsu Shin ,  Joon-Gyu Ryu ,  Hoon Jeong ,  Ho-Jin Lee

发明人： Minsu Shin ,  Joon-Gyu Ryu ,  Hoon Jeong ,  Ho-Jin Lee

IPC分类号： H04B7/216

CPC分类号： H04B7/18513 ,  H04L1/0003 ,  H04L1/0009 ,  H04W4/18 ,  H04W84/06

摘要： Provided are a forward link rain attenuation compensating apparatus using an adaptive transmission scheme in an interactive satellite communication system and a method thereof. The apparatus separates the mobile stations into clear-sky mobile stations and mobile stations in the state of rain attenuation and makes the clear-sky mobile stations receive data having a high data transmission efficiency at a high-speed while making the rain attenuation mobile stations receive the data continuously although the data transmit rate is low by making each of the two kinds of mobile stations receive data frames of a different transmission method, and provides a method therefor. The apparatus includes: a resource manager, a transmitting data format converter, a forward modulator, a backward demodulator, a receiving data format converter.

摘要翻译： 提供一种在交互式卫星通信系统中使用自适应传输方案的前向链路雨衰补偿装置及其方法。 该装置将移动台分为处于雨衰状态的空中移动台和移动台，使得天空清空的移动台高速接收高数据传输效率的数据，同时使雨衰移移动站接收 通过使两种移动站中的每一个接收到不同的传输方式的数据帧，数据传输速率是低的，并且提供了一种方法。 该装置包括：资源管理器，发送数据格式转换器，前向调制器，反向解调器，接收数据格式转换器。

公开(公告)号：US07777345B2

公开(公告)日：2010-08-17

申请号：US12132925

申请日：2008-06-04

申请人： Ho-Jin Lee ,  Nam-Seog Kim ,  Yong-Chai Kwon ,  Hyun-Soo Chung ,  In-Young Lee ,  Son-Kwan Hwang

发明人： Ho-Jin Lee ,  Nam-Seog Kim ,  Yong-Chai Kwon ,  Hyun-Soo Chung ,  In-Young Lee ,  Son-Kwan Hwang

IPC分类号： H01L23/48

CPC分类号： H01L24/05 ,  H01L23/481 ,  H01L24/03 ,  H01L24/06 ,  H01L24/13 ,  H01L24/32 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/034 ,  H01L2224/036 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05011 ,  H01L2224/05552 ,  H01L2224/05559 ,  H01L2224/05561 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06136 ,  H01L2224/06181 ,  H01L2224/08146 ,  H01L2224/32145 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/19041 ,  H01L2924/00014

摘要： A semiconductor device having a through electrode and a method of fabricating the same are disclosed. In one embodiment, a semiconductor device includes a first insulating layer formed on a semiconductor substrate. A wiring layer having a first aperture to expose a portion of the first insulating layer is formed on the first insulating layer. A second insulating layer is formed on an upper portion of the wiring layer and in the first aperture. A conductive pad having a second aperture to expose a portion of the second insulating layer is formed on the second insulating layer. A through hole with a width narrower than widths of the first and second apertures is formed through the first and second insulating layers and an upper portion of the semiconductor substrate. A through electrode is formed in the through hole.

摘要翻译： 公开了一种具有通孔的半导体器件及其制造方法。 在一个实施例中，半导体器件包括形成在半导体衬底上的第一绝缘层。 具有用于露出第一绝缘层的一部分的第一孔的布线层形成在第一绝缘层上。 第二绝缘层形成在布线层的上部和第一孔中。 具有第二孔径以暴露第二绝缘层的一部分的导电焊盘形成在第二绝缘层上。 通过第一和第二绝缘层和半导体衬底的上部形成宽度比第一和第二孔的宽度窄的通孔。 在通孔中形成贯通电极。

公开(公告)号：US20090305502A1

公开(公告)日：2009-12-10

申请号：US12476793

申请日：2009-06-02

申请人： Ho-Jin Lee ,  Kang-Wook Lee ,  Myeong-Soon Park ,  Ju-il Choi ,  Son-Kwan Hwang

发明人： Ho-Jin Lee ,  Kang-Wook Lee ,  Myeong-Soon Park ,  Ju-il Choi ,  Son-Kwan Hwang

IPC分类号： H01L21/768

CPC分类号： H01L23/528 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5226 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/06181 ,  H01L2224/13009 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/48145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/15311 ,  H01L2924/00012

摘要： Methods of forming an integrated circuit device include forming an interlayer dielectric layer on a first surface of a semiconductor substrate and then forming an interconnect hole that extends through the interlayer dielectric layer and into the semiconductor substrate. A first sidewall spacer layer is formed on a sidewall of the interconnect hole. The semiconductor substrate at a bottom of the interconnect hole is isotropically etched to define an undercut recess in the semiconductor substrate. This etching step is performed using the first sidewall spacer layer as an etching mask. The interconnect hole and the uncut recess are then filled with a through-via electrode. A second surface of the semiconductor substrate is removed for a sufficient duration to expose the uncut recess containing the through-via electrode.

摘要翻译： 形成集成电路器件的方法包括在半导体衬底的第一表面上形成层间电介质层，然后形成延伸穿过层间电介质层并进入半导体衬底的互连孔。 第一侧壁间隔层形成在互连孔的侧壁上。 在互连孔的底部的半导体衬底被各向同性蚀刻以在半导体衬底中限定底切凹部。 该蚀刻步骤使用第一侧壁间隔层作为蚀刻掩模进行。 然后用通孔电极填充互连孔和未切割的凹部。 去除半导体衬底的第二表面足够的持续时间以露出包含通孔电极的未切割凹部。

公开(公告)号：US20090180476A1

公开(公告)日：2009-07-16

申请号：US12298426

申请日：2007-04-24

申请人： Jang-Won Lee ,  Ho-Jin Lee ,  Sang-Man Bak

发明人： Jang-Won Lee ,  Ho-Jin Lee ,  Sang-Man Bak

IPC分类号： H04L12/56

CPC分类号： H04L65/1006 ,  H04L29/06027 ,  H04L29/12367 ,  H04L29/12528 ,  H04L29/12556 ,  H04L61/2514 ,  H04L61/2575 ,  H04L61/2585 ,  H04L65/103 ,  H04L65/104 ,  H04L65/1043

摘要： Disclosed are an interworking system between IP networks using different IP address format, an application layer gateway (ALG) server, a network address translator, an interworking method, and a SIP message routing method. The interworking system between a local network using a private IP and a public network using a public IP includes a STUN server and an application layer gateway (ALG) server. The STUN server provides binding information of header information of a public IP binding request. The application layer gateway (ALG) server performs a public IP binding request with header information changed by IP masquerading, and performs routing by applying the received binding information to media receiving address information of a SIP message.

摘要翻译： 公开了使用不同IP地址格式的IP网络，应用层网关（ALG）服务器，网络地址转换器，互通方法和SIP消息路由方法之间的互通系统。 使用专用IP的本地网络和使用公共IP的公共网络之间的互通系统包括STUN服务器和应用层网关（ALG）服务器。 STUN服务器提供公有IP绑定请求的头信息的绑定信息。 应用层网关（ALG）服务器执行具有由IP伪装改变的头信息的公共IP绑定请求，并通过将接收到的绑定信息应用于SIP消息的媒体接收地址信息来执行路由。

公开(公告)号：US20070151298A1

公开(公告)日：2007-07-05

申请号：US11489959

申请日：2006-07-20

申请人： Jin-Haing Kim ,  Ho-Jin Lee ,  Mun-Hyun Do ,  Jae-Hyeon Seong ,  Yun-Ho Kim

发明人： Jin-Haing Kim ,  Ho-Jin Lee ,  Mun-Hyun Do ,  Jae-Hyeon Seong ,  Yun-Ho Kim

IPC分类号： C03B37/07 ,  C03B37/018 ,  F27B1/26

CPC分类号： C03B37/0142 ,  C03B2207/50 ,  C03B2207/70

摘要： Vapor Axial Deposition (VAD) apparatus and method is provided. The VAD apparatus includes a first torch, a second torch, a thermometer, a controller, and a moving device. The first torch grows a core by depositing a soot at an end of a soot preform arranged on an axis. The second torch grows a clad by depositing a soot on the face of the core. The thermometer detects the temperature of the end of the soot preform along the axis and the temperature of an other/lower portion of the core. The controller calculates a difference between a temperature (T1) of the end of the soot preform and a temperature (T4) of a lower portion of the core and controls the movement of the soot preform according to the difference. The moving device moves the soot preform along the axis according to the instruction of the controller.

摘要翻译： 提供蒸气轴向沉积（VAD）装置和方法。 VAD装置包括第一炬，第二炬，温度计，控制器和移动装置。 第一个火炬通过在布置在轴上的烟灰预制件的端部沉积烟灰来生长核心。 第二个火炬通过在核心的表面上放置一个烟灰来生长一个包裹。 温度计检测烟炱预制件的端部沿着轴的温度和芯的另一/下部的温度。 控制器计算烟灰预制件的端部的温度（T 1）与芯部的下部的温度（T 4）之间的差异，并根据差异来控制烟灰预制件的移动。 移动装置根据控制器的指示沿着轴移动烟灰预制件。

公开(公告)号：US20070089464A1

公开(公告)日：2007-04-26

申请号：US11489883

申请日：2006-07-20

申请人： Yun-Ho Kim ,  Mun-Hyun Do ,  Ho-Jin Lee ,  Jin-Seong Yang ,  Jae-Hyeon Seong

发明人： Yun-Ho Kim ,  Mun-Hyun Do ,  Ho-Jin Lee ,  Jin-Seong Yang ,  Jae-Hyeon Seong

IPC分类号： C03B37/07 ,  C03B37/018

CPC分类号： C03B37/01413 ,  C03B2207/81 ,  C03B2207/87 ,  Y02P40/57

摘要： An apparatus for fabricating a soot preform includes at least one torch for depositing soot generated by flame hydrolysis on the soot preform. A vaporizer vaporizes a liquid source material. A heater heats a dilution gas. The vaporizer and the heater respectively supply, to the torch, the vaporized source material and the heated dilution gas together through a single pipe.

摘要翻译： 用于制造烟灰预制件的装置包括至少一个用于在烟炱预制件上沉积通过火焰水解产生的烟灰的炬。 蒸发器蒸发液体源材料。 加热器加热稀释气体。 蒸发器和加热器分别通过单个管道将蒸发的源材料和加热的稀释气体一起提供给割炬。

公开(公告)号：US20050141472A1

公开(公告)日：2005-06-30

申请号：US10892679

申请日：2004-07-15

申请人： Minsu Shin ,  Joon-Gyn Ryu ,  Hoon Jeong ,  Ho-Jin Lee

发明人： Minsu Shin ,  Joon-Gyn Ryu ,  Hoon Jeong ,  Ho-Jin Lee

IPC分类号： H04B7/185 ,  H04L1/00 ,  H04L12/56 ,  H04Q7/00

CPC分类号： H04B7/18513 ,  H04L1/0003 ,  H04L1/0009 ,  H04W4/18 ,  H04W84/06

摘要： Provided are a forward link rain attenuation compensating apparatus using an adaptive transmission scheme in an interactive satellite communication system and a method thereof. The apparatus separates the mobile stations into clear-sky mobile stations and mobile stations in the state of rain attenuation and makes the clear-sky mobile stations receive data having a high data transmission efficiency at a high-speed while making the rain attenuation mobile stations receive the data continuously although the data transmit rate is low by making each of the two kinds of mobile stations receive data frames of a different transmission method, and provides a method therefor. The apparatus includes: a resource manager, a transmitting data format converter, a forward modulator, a backward demodulator, a receiving data format converter.

摘要翻译： 提供一种在交互式卫星通信系统中使用自适应传输方案的前向链路雨衰补偿装置及其方法。 该装置将移动台分为处于雨衰状态的空中移动台和移动台，使得天空清晰的移动台高速接收高数据传输效率的数据，同时使雨衰移移动站接收 通过使两种移动站中的每一个接收到不同传输方式的数据帧，数据传输速率低，并且提供了一种方法。 该装置包括：资源管理器，发送数据格式转换器，前向调制器，反向解调器，接收数据格式转换器。

公开(公告)号：US06885668B1

公开(公告)日：2005-04-26

申请号：US09543822

申请日：2000-04-05

申请人： Ho-Jin Lee ,  Chae-Moon Lee ,  Duck-Young Seo ,  Jin-Hyung Yang

发明人： Ho-Jin Lee ,  Chae-Moon Lee ,  Duck-Young Seo ,  Jin-Hyung Yang

IPC分类号： H04L12/28 ,  H04L12/70 ,  H04W36/18 ,  H04W88/08 ,  H04W88/12 ,  H04W88/14 ,  H04L12/56

CPC分类号： H04L12/5601 ,  H04L49/606 ,  H04L2012/5607 ,  H04L2012/5676 ,  H04W36/18 ,  H04W88/08 ,  H04W88/12 ,  H04W88/14

摘要： Disclosed is an apparatus and a method capable of processing low-speed circuit data lower than 64 kbps and high-speed packet data higher than 64 kbps in which a high-speed data network is constructed by converting an LCIN (local CDMA (code division multiple access) interconnection network) for supplying a communication path of packet data among sub-systems in a BSC (base station controller) of CDMA system to an ATM (asynchronous transfer mode) for processing high-speed data, installing a TSB (transcoder selector bank) or an SDU (selector distribution unit) for processing high-speed packet data higher than 64 kbps in the BSC, and linking an ATM switch to an MSC (mobile switching center) to provide a high-speed data service with respect to other network. The TSB for processing voice data and low-speed data lower than 64 kbps and high-speed data higher than 64 kbps, or the TSB for processing high-speed data higher than 64 kbps is provided to the BSC, thus allowing high-speed data processing up to 2 mbps, high-speed data service, multimedia service like a video service, and high-speed Internet service.

摘要翻译： 公开了一种能够处理低于64kbps的低速电路数据和高于64kbps的高速分组数据的装置和方法，其中高速数据网络通过转换LCIN（本地CDMA（码分多址） 接入）互连网络），用于将CDMA系统的BSC（基站控制器）中的子系统之间的分组数据的通信路径提供给用于处理高速数据的ATM（异步传输模式），安装TSB（代码转换器选择器组 ）或用于在BSC中处理高于64kbps的高速分组数据的SDU（选择器分配单元），以及将ATM交换机链接到MSC（移动交换中心）以提供关于其他网络的高速数据服务 。 用于处理语音数据和低于64kbps的低速数据的TSB和高于64kbps的高速数据，或用于处理高于64kbps的高速数据的TSB提供给BSC，从而允许高速数据 处理高达2 Mbps，高速数据服务，视频服务等多媒体服务，高速上网服务。

公开(公告)号：US20050069055A1

公开(公告)日：2005-03-31

申请号：US10839383

申请日：2004-05-04

申请人： Yun-Jeong Song ,  PanSoo Kim ,  Ho-Jin Lee

发明人： Yun-Jeong Song ,  PanSoo Kim ,  Ho-Jin Lee

IPC分类号： H04L27/06 ,  H04L27/00 ,  H04L27/22 ,  H04L27/38

CPC分类号： H04L27/22 ,  H04L27/3809 ,  H04L2027/0016 ,  H04L2027/0024

摘要： An apparatus and method for compensating an imbalance of phase and gain between I-channel and Q-channel by using variable loop gains is disclosed. The apparatus includes: a phase error generator for generating a phase error signal by using the I-channel signal and the Q-channel signal; an average value calculator for calculating an average value of the phase error signal; a comparator for comparing the average value with a predetermined threshold; a selector for selecting a loop gain value among a set of loop gains based on the comparison result; a phase imbalance generator for generating a phase imbalance by using the selected loop gain value; and a compensator for compensating the Q-channel signal based on the phase imbalance.

摘要翻译： 公开了一种用于通过使用可变环路增益来补偿I信道和Q信道之间的相位和增益不平衡的装置和方法。 该装置包括：相位误差发生器，用于通过使用I信道信号和Q信道信号产生相位误差信号; 用于计算相位误差信号的平均值的平均值计算器; 用于将所述平均值与预定阈值进行比较的比较器; 用于根据比较结果在一组循环增益中选择一个环路增益值的选择器; 相位不平衡发生器，用于通过使用所选择的环路增益值来产生相位不平衡; 以及用于基于相位不平衡来补偿Q通道信号的补偿器。

公开(公告)号：US09847276B2

公开(公告)日：2017-12-19

申请号：US14463645

申请日：2014-08-19

申请人： Pil-Kyu Kang ,  Byung Lyul Park ,  SungHee Kang ,  Taeseong Kim ,  Taeyeong Kim ,  Kwangjin Moon ,  Jae-Hwa Park ,  Sukchul Bang ,  Seongmin Son ,  Jin Ho An ,  Ho-Jin Lee ,  Jeonggi Jin

发明人： Pil-Kyu Kang ,  Byung Lyul Park ,  SungHee Kang ,  Taeseong Kim ,  Taeyeong Kim ,  Kwangjin Moon ,  Jae-Hwa Park ,  Sukchul Bang ,  Seongmin Son ,  Jin Ho An ,  Ho-Jin Lee ,  Jeonggi Jin

IPC分类号： H01L29/40 ,  H01L23/48 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having a top surface and a bottom surface facing each other, an interlayer dielectric layer provided on the top surface of the semiconductor substrate and including an integrated circuit, an inter-metal dielectric layer provided on the interlayer dielectric layer and including at least one metal interconnection electrically connected to the integrated circuit, an upper dielectric layer disposed on the inter-metal dielectric layer, a through-electrode penetrating the inter-metal dielectric layer, the interlayer dielectric layer, and the semiconductor substrate, a via-dielectric layer surrounding the through-electrode and electrically insulating the through-electrode from the semiconductor substrate. The via-dielectric layer includes one or more air-gaps between the upper dielectric layer and the interlayer dielectric layer.