METHOD FOR FORMING VIAS IN A SUBSTRATE
    51.
    发明申请
    METHOD FOR FORMING VIAS IN A SUBSTRATE 有权
    在基材中形成六角形的方法

    公开(公告)号:US20100330803A1

    公开(公告)日:2010-12-30

    申请号:US12876721

    申请日:2010-09-07

    Applicant: Meng-Jen Wang

    Inventor: Meng-Jen Wang

    CPC classification number: H01L21/76898

    Abstract: The present invention relates to a method for forming vias in a substrate, including the following steps: (a) providing a substrate having a first surface and a second surface; (b) forming a groove on the substrate; (c) filling the groove with a conductive metal; (d) removing part of the substrate which surrounds the conductive metal, wherein the conductive metal is maintained so as to form an accommodating space between the conductive metal and the substrate; (e) forming an insulating material in the accommodating space; and (f) removing part of the second surface of the substrate to expose the conductive metal and the insulating material. In this way, thicker insulating material can be formed in the accommodating space, and the thickness of the insulating material in the accommodating space is even.

    Abstract translation: 本发明涉及一种在衬底中形成通孔的方法,包括以下步骤:(a)提供具有第一表面和第二表面的衬底; (b)在基板上形成凹槽; (c)用导电金属填充凹槽; (d)去除围绕所述导电金属的所述衬底的一部分,其中所述导电金属被保持以在所述导电金属和所述衬底之间形成容纳空间; (e)在容纳空间中形成绝缘材料; 和(f)去除衬底的第二表面的一部分以暴露导电金属和绝缘材料。 以这种方式,可以在容纳空间中形成更厚的绝缘材料,并且容纳空间中的绝缘材料的厚度是均匀的。

    Method for forming vias in a substrate
    53.
    发明授权
    Method for forming vias in a substrate 有权
    在基板中形成通孔的方法

    公开(公告)号:US07816265B2

    公开(公告)日:2010-10-19

    申请号:US12183140

    申请日:2008-07-31

    Applicant: Meng-Jen Wang

    Inventor: Meng-Jen Wang

    CPC classification number: H01L21/76898

    Abstract: A method for forming vias in a substrate, including the following steps: (a) providing a substrate having a first surface and a second surface; (b) forming a groove on the substrate; (c) filling the groove with a conductive metal; (d) removing part of the substrate which surrounds the conductive metal, wherein the conductive metal is maintained so as to form an accommodating space between the conductive metal and the substrate; (e) forming an insulating material in the accommodating space; and (f) removing part of the second surface of the substrate to expose the conductive metal and the insulating material. In this way, thicker insulating material can be formed in the accommodating space, and the thickness of the insulating material in the accommodating space is even.

    Abstract translation: 一种在衬底中形成通孔的方法,包括以下步骤:(a)提供具有第一表面和第二表面的衬底; (b)在基板上形成凹槽; (c)用导电金属填充凹槽; (d)去除围绕所述导电金属的所述衬底的一部分,其中所述导电金属被保持以在所述导电金属和所述衬底之间形成容纳空间; (e)在容纳空间中形成绝缘材料; 和(f)去除衬底的第二表面的一部分以暴露导电金属和绝缘材料。 以这种方式,可以在容纳空间中形成更厚的绝缘材料,并且容纳空间中的绝缘材料的厚度是均匀的。

    SEMICONDUCTOR STRUCTURE, METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR PACKAGE
    54.
    发明申请
    SEMICONDUCTOR STRUCTURE, METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR PACKAGE 审中-公开
    半导体结构,制造半导体结构和半导体封装的方法

    公开(公告)号:US20090321916A1

    公开(公告)日:2009-12-31

    申请号:US12484860

    申请日:2009-06-15

    Abstract: A semiconductor structure, a method for manufacturing a semiconductor structure and a semiconductor package are provided. The method for manufacturing a semiconductor structure includes the following steps. Firstly, a silicon substrate is provided. Next, a part of the silicon substrate is removed to form a ring hole and a silicon pillar surrounded by the silicon pillar. Then, a photosensitive material is disposed in the ring hole, wherein the photosensitive material is insulating. After that, the silicon pillar is removed, such that the ring hole forms a through hole and the photosensitive material covers a lateral wall of the through hole. Lastly, the conductive material is disposed in the through hole, wherein the outer surface of the conductive material is surrounded by the photosensitive material.

    Abstract translation: 提供半导体结构,半导体结构的制造方法以及半导体封装。 制造半导体结构的方法包括以下步骤。 首先,提供硅基板。 接下来,去除硅衬底的一部分以形成由硅柱包围的环形孔和硅柱。 然后,感光材料设置在环形孔中,其中感光材料是绝缘的。 之后,去除硅柱,使得环孔形成通孔,并且感光材料覆盖通孔的侧壁。 最后,导电材料设置在通孔中,其中导电材料的外表面被感光材料包围。

    METHOD FOR FORMING VIAS IN A SUBSTRATE
    55.
    发明申请
    METHOD FOR FORMING VIAS IN A SUBSTRATE 有权
    在基材中形成六角形的方法

    公开(公告)号:US20090035932A1

    公开(公告)日:2009-02-05

    申请号:US12183140

    申请日:2008-07-31

    Applicant: Meng-Jen Wang

    Inventor: Meng-Jen Wang

    CPC classification number: H01L21/76898

    Abstract: The present invention relates to a method for forming vias in a substrate, including the following steps: (a) providing a substrate having a first surface and a second surface; (b) forming a groove on the substrate; (c) filling the groove with a conductive metal; (d) removing part of the substrate which surrounds the conductive metal, wherein the conductive metal is maintained so as to form an accommodating space between the conductive metal and the substrate; (e) forming an insulating material in the accommodating space; and (f) removing part of the second surface of the substrate to expose the conductive metal and the insulating material. In this way, thicker insulating material can be formed in the accommodating space, and the thickness of the insulating material in the accommodating space is even.

    Abstract translation: 本发明涉及一种在衬底中形成通孔的方法,包括以下步骤:(a)提供具有第一表面和第二表面的衬底; (b)在基板上形成凹槽; (c)用导电金属填充凹槽; (d)去除围绕所述导电金属的所述衬底的一部分,其中所述导电金属被保持以在所述导电金属和所述衬底之间形成容纳空间; (e)在容纳空间中形成绝缘材料; 和(f)去除衬底的第二表面的一部分以暴露导电金属和绝缘材料。 以这种方式,可以在容纳空间中形成更厚的绝缘材料,并且容纳空间中的绝缘材料的厚度是均匀的。

    Chip package structure and method for manufacturing the same
    57.
    发明申请
    Chip package structure and method for manufacturing the same 审中-公开
    芯片封装结构及其制造方法

    公开(公告)号:US20060244115A1

    公开(公告)日:2006-11-02

    申请号:US11313679

    申请日:2005-12-22

    Abstract: A chip package structure and a method for manufacturing the same are disclosed. The chip package structure comprises a carrier and a chip deposed on the carrier. The carrier comprises a heat-sinking pad, a plurality of pins, and at least two supporting bars, in which the heat-sinking pad has a carrying surface. The chip includes a plurality of bonding bumps flipped and connected to the heat-sinking pad, the pins, and the supporting bars of the carrier.

    Abstract translation: 公开了一种芯片封装结构及其制造方法。 芯片封装结构包括载体和放置在载体上的芯片。 载体包括散热垫,多个销和至少两个支撑条,其中散热垫具有承载表面。 芯片包括翻转并连接到散热垫,引脚和载体的支撑杆的多个接合凸块。

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