公开(公告)号：US07358186B2

公开(公告)日：2008-04-15

申请号：US10735216

申请日：2003-12-12

申请人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred C. Redeker ,  Joel M. Cook

发明人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred C. Redeker ,  Joel M. Cook

IPC分类号： H01L21/44 ,  B05C5/12

CPC分类号： C23C18/1612 ,  C23C18/14 ,  C23C18/161 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1667 ,  C23C18/168 ,  C23C18/31 ,  H01L21/288

摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.

摘要翻译： 概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。 更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。 通过向晶片表面施加辐射能来提供选择性加热。 晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。 界面处的温度升高又导致在晶片表面发生电镀反应。 因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

公开(公告)号：US20060063470A1

公开(公告)日：2006-03-23

申请号：US10948510

申请日：2004-09-22

申请人： John Boyd ,  Fred Redeker ,  Yezdi Dordi

发明人： John Boyd ,  Fred Redeker ,  Yezdi Dordi

IPC分类号： B24B51/00 ,  B24B1/00

CPC分类号： B24B7/228 ,  B24B37/013 ,  B24B49/12

摘要： A system for applying a microtopography to a semiconductor wafer (“wafer”) is provided. The system includes a chuck configured to hold and rotate the wafer. The system also includes a grinding wheel disposed over the chuck in a proximately adjustable manner relative to the wafer to be held by the chuck. The grinding wheel is configured to rotate about a central axis of the grinding wheel, wherein the central axis of the grinding wheel is non-parallel to the central axis of the chuck. The grinding wheel is capable of contacting the wafer and removing material from the wafer at the area of contact. Appropriate application of the grinding wheel to the wafer serves to generate a microtopography across the wafer surface. The resulting microtopography can then be planarized more effectively by conventional chemical mechanical planarization methods.

摘要翻译： 提供了一种将微形态学应用于半导体晶片（“晶片”）的系统。 该系统包括配置成保持和旋转晶片的卡盘。 该系统还包括以相对于由卡盘保持的晶片可接近调节的方式设置在卡盘上方的砂轮。 砂轮构造成围绕研磨轮的中心轴线旋转，其中砂轮的中心轴线不平行于卡盘的中心轴线。 砂轮能够在接触区域接触晶片并从晶片上去除材料。 将砂轮适当地施加到晶片用于在晶片表面上产生微观形貌。 然后可以通过常规的化学机械平面化方法更有效地平面化所得到的微观形态。

公开(公告)号：US08048283B2

公开(公告)日：2011-11-01

申请号：US12724379

申请日：2010-03-15

申请人： Yezdi Dordi ,  Bob Maraschin ,  John Boyd ,  Fred C. Redeker ,  Carl Woods

发明人： Yezdi Dordi ,  Bob Maraschin ,  John Boyd ,  Fred C. Redeker ,  Carl Woods

IPC分类号： C25D5/02

CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D17/12 ,  H01L21/2885

摘要： First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.

摘要翻译： 第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处，其中第一和第二位置相对于晶片支撑件彼此基本相对。 可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。 阳极设置在晶片上方并且靠近晶片，使得电镀溶液的弯液面保持在阳极和晶片之间。 当阳极从晶片从第一位置移动到第二位置时，通过阳极和晶片之间的弯液面施加电流。 此外，当阳极移动到晶片上时，第一和第二电极被控制以与晶片连接，同时确保阳极不通过连接的电极。

公开(公告)号：US07884017B2

公开(公告)日：2011-02-08

申请号：US12699518

申请日：2010-02-03

申请人： Zhonghui Alex Wang ,  Tiruchirapalli Arunagiri ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Boyd ,  Mikhail Korolik ,  Arthur M. Howald ,  William Thie ,  Praveen Nalla

发明人： Zhonghui Alex Wang ,  Tiruchirapalli Arunagiri ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Boyd ,  Mikhail Korolik ,  Arthur M. Howald ,  William Thie ,  Praveen Nalla

IPC分类号： H01L21/44 ,  H01L21/31 ,  H01L21/469 ,  H01L21/24 ,  H01L21/40

CPC分类号： H01L21/02074

摘要： Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in the oxidizing environment both removes residues and oxidizes exposed copper surfaces to form a cupric oxide layer. The thermal treatment in the reducing environment then reduces the cupric oxide to elemental copper. This leaves the exposed copper clean and in condition for further processing, such as electroless plating.

摘要翻译： 提供了化学机械抛光后的半导体晶片清洗方法。 一种示例性方法将晶片暴露于氧化环境中的热处理，然后在还原环境中进行热处理。 在氧化环境中的热处理既去除残留物，又氧化暴露的铜表面以形成氧化铜层。 然后，在还原环境中的热处理将氧化铜还原为元素铜。 这使得暴露的铜清洁并进行进一步处理，例如化学镀。

公开(公告)号：US07563348B2

公开(公告)日：2009-07-21

申请号：US10879396

申请日：2004-06-28

申请人： Yezdi Dordi ,  Bob Maraschin ,  John Boyd ,  Fred C. Redeker

发明人： Yezdi Dordi ,  Bob Maraschin ,  John Boyd ,  Fred C. Redeker

IPC分类号： C25D17/00

CPC分类号： C25D5/026 ,  C25D5/02 ,  C25D5/06 ,  C25D17/14

摘要： An electroplating head including a chamber having a fluid entrance and a fluid exit is provided. The chamber is configured to contain a flow of electroplating solution from the fluid entrance to the fluid exit. The electroplating head also includes an anode disposed within the chamber. The anode is configured to be electrically connected to a power supply. The electroplating head further includes a porous resistive material disposed at the fluid exit such that the flow of electroplating solution is required to traverse through the porous resistive material.

摘要翻译： 提供一种包括具有流体入口和流体出口的室的电镀头。 腔室被配置成包含从流体入口到流体出口的电镀溶液流。 电镀头还包括设置在室内的阳极。 阳极被配置为电连接到电源。 电镀头还包括设置在流体出口处的多孔电阻材料，使得电镀溶液的流动需要穿过多孔电阻材料。

公开(公告)号：US20080280456A1

公开(公告)日：2008-11-13

申请号：US11801269

申请日：2007-05-08

申请人： Zhonghui Alex Wang ,  Tiruchirapalli Arunagiri ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Boyd ,  Mikhail Korolik ,  Arthur M. Howald ,  William Thie ,  Praveen Nalla

发明人： Zhonghui Alex Wang ,  Tiruchirapalli Arunagiri ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Boyd ,  Mikhail Korolik ,  Arthur M. Howald ,  William Thie ,  Praveen Nalla

IPC分类号： H01L21/00

CPC分类号： H01L21/02074

摘要： Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in the oxidizing environment both removes residues and oxidizes exposed copper surfaces to form a cupric oxide layer. The thermal treatment in the reducing environment then reduces the cupric oxide to elemental copper. This leaves the exposed copper clean and in condition for further processing, such as electroless plating.

摘要翻译： 提供了化学机械抛光后的半导体晶片清洗方法。 一种示例性方法将晶片暴露于氧化环境中的热处理，然后在还原环境中进行热处理。 在氧化环境中的热处理既去除残留物，又氧化暴露的铜表面以形成氧化铜层。 然后，在还原环境中的热处理将氧化铜还原为元素铜。 这使得暴露的铜清洁并进行进一步处理，例如化学镀。

公开(公告)号：US20080152823A1

公开(公告)日：2008-06-26

申请号：US11643404

申请日：2006-12-20

申请人： John Boyd ,  Yezdi Dordi ,  Tiruchirapalli Arunagiri ,  William Thie ,  Fritz C. Redeker ,  Praveen Nalla

发明人： John Boyd ,  Yezdi Dordi ,  Tiruchirapalli Arunagiri ,  William Thie ,  Fritz C. Redeker ,  Praveen Nalla

IPC分类号： B05D1/18

CPC分类号： C23C18/1689 ,  C23C18/161 ,  C23C18/1653 ,  C23C18/1658 ,  C23C18/1683 ,  C23C18/31 ,  H01L21/288 ,  H01L21/76877

摘要： A self-limiting electroless plating process is provided to plate thin films with improved uniformity. The process comprises dispensing an electroless plating solution onto a substrate to form a quiescent solution layer from which a conformal plated layer plates onto a surface of the substrate by a redox reaction. The redox reaction occurs at the surface of the substrate between a reducing agent ion and a plating ion and produces an oxidized ion. Because the solution is quiescent, a boundary layer forms within the solution layer adjacent to the surface. The boundary layer is characterized by a concentration gradient of the oxidized ion. Diffusion of the reducing agent ion through the boundary layer controls the redox reaction. The quiescent solution layer can be maintained until the reducing agent ion in the solution layer is substantially depleted.

摘要翻译： 提供了一种自限制化学镀工艺，以平整薄膜，以均匀度提高。 该方法包括将化学镀溶液分配到基底上以形成静电溶液层，通过氧化还原反应从其中将共形镀层从该平板镀在基底的表面上。 氧化还原反应发生在还原剂离子和镀覆离子之间的衬底表面，并产生氧化离子。 因为溶液是静止的，所以在与表面相邻的溶液层内形成边界层。 边界层的特征在于氧化离子的浓度梯度。 还原剂离子通过边界层的扩散控制氧化还原反应。 可以维持静止溶液层，直到溶液层中的还原剂离子基本上被耗尽。

公开(公告)号：US20070292604A1

公开(公告)日：2007-12-20

申请号：US11513634

申请日：2006-08-30

申请人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

发明人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

IPC分类号： B05D3/00 ,  B05D5/12 ,  B05D1/18 ,  C04B41/00 ,  C23C14/00 ,  B05C13/02 ,  B29C71/04

CPC分类号： B05C13/02 ,  B05D3/002 ,  C23C18/1651 ,  C23C18/1851 ,  C23C18/1893 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862

摘要： The embodiments fill the need to enhance electro-migration performance, provide lower metal resistivity, and improve metal-to-metal interfacial adhesion for copper interconnects by providing improved processes and systems that produce an improved metal-to-metal interface, more specifically copper-to-cobalt-alloy interface. An exemplary method of preparing a substrate surface of a substrate to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of a copper interconnect of the substrate in an integrated system to improve electromigration performance of the copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. An exemplary system to practice the exemplary method described above is also provided.

摘要翻译： 这些实施方案通过提供改进的工艺和系统来提供改进的金属 - 金属界面，更具体地说是铜 - 金属界面，从而满足增强电迁移性能，提供较低的金属电阻率以及改善铜互连的金属 - 金属界面粘附的需要， 钴合金界面。 提供了一种制备基板的基板表面的示例性方法，以在集成系统中选择性地在基板的铜互连的铜表面上沉积钴合金材料的薄层，以改善铜互连的电迁移性能。 该方法包括从集成系统中的衬底表面去除污染物和金属氧化物，并且在去除集成系统中的污染物和金属氧化物之后，使用还原环境来修复衬底表面。 该方法还包括在修复基板表面之后，在集成系统中的铜互连的铜表面上选择性地沉积钴合金材料的薄层。 还提供了用于实践上述示例性方法的示例性系统。

公开(公告)号：US20050130415A1

公开(公告)日：2005-06-16

申请号：US10735216

申请日：2003-12-12

申请人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred Redeker ,  Joel Cook

发明人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred Redeker ,  Joel Cook

IPC分类号： C23C18/14 ,  C23C18/16 ,  C23C18/31 ,  G01N27/26 ,  H01L21/288 ,  H01L21/44

CPC分类号： C23C18/1612 ,  C23C18/14 ,  C23C18/161 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1667 ,  C23C18/168 ,  C23C18/31 ,  H01L21/288

摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.

摘要翻译： 概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。 更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。 通过向晶片表面施加辐射能来提供选择性加热。 晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。 界面处的温度升高又导致在晶片表面发生电镀反应。 因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

公开(公告)号：US20050126932A1

公开(公告)日：2005-06-16

申请号：US10734704

申请日：2003-12-12

申请人： Fred Redeker ,  John Boyd ,  Yezdi Dordi ,  William Thie ,  Bob Maraschin

发明人： Fred Redeker ,  John Boyd ,  Yezdi Dordi ,  William Thie ,  Bob Maraschin

IPC分类号： B23H3/02 ,  C23C18/06 ,  C23C18/12 ,  C25C3/20 ,  G01N27/26 ,  H01L21/288 ,  H01L21/461 ,  H01L21/768

CPC分类号： H01L21/7684 ,  C23C18/06 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1291 ,  C23C18/14 ,  H01L21/288

摘要： Broadly speaking, the present invention provides a method and an apparatus for planarizing a semiconductor wafer (“wafer”). More specifically, the present invention provides for depositing a planarizing layer over the wafer, wherein the planarizing layer serves to fill recessed areas present on a surface of the wafer. A planar member is positioned over and proximate to a top surface of the wafer. Positioning of the planar member serves to entrap electroless plating solution between the planar member and the wafer surface. Radiant energy is applied to the wafer surface to cause a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase in turn causes plating reactions to occur at the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member.

摘要翻译： 广义而言，本发明提供了一种用于平面化半导体晶片（“晶片”）的方法和装置。 更具体地，本发明提供了在晶片上沉积平坦化层，其中平坦化层用于填充存在于晶片表面上的凹陷区域。 平面构件定位在晶片的顶表面上方并靠近晶片的顶表面。 平面构件的定位用于在平面构件和晶片表面之间夹带化学镀溶液。 辐射能量被施加到晶片表面以在晶片表面和化学镀溶液之间的界面处引起温度升高。 温度升高又会导致电镀反应发生在晶片表面。 通过电镀反应沉积的材料形成符合平面构件平坦度的平坦化层。