公开(公告)号：US07912553B2

公开(公告)日：2011-03-22

申请号：US10536878

申请日：2003-11-27

申请人： Jun-ichi Nishizawa

发明人： Jun-ichi Nishizawa

IPC分类号： A61F7/00 ,  H05B6/64

CPC分类号： A61L2/0011 ,  A61B18/18 ,  A61B18/1815 ,  A61B18/22 ,  A61B90/37 ,  A61N1/40 ,  A61N5/02

摘要： An electromagnetic wave irradiation tool encompasses a narrow tube (endoscope probe) (7) defined by an outside diameter of 0.1 mm-20 mm, having an electromagnetic wave irradiation terminal (3) configured to irradiate an electromagnetic wave (2) having a frequency equal to a characteristic frequency of a microorganism (11) at the top of the narrow tube (7) and an electromagnetic wave generation unit (3) configured to generate the electromagnetic wave (2) and to supply the electromagnetic wave (2) to the electromagnetic wave irradiation terminal (3). The electromagnetic wave irradiation tool drives the microorganism (11) into a resonant vibration state selectively so that the microorganism (11) can be destroyed, without giving damages to biological body (1) for medically treating the disease induced by the microorganism (11).

摘要翻译： 电磁波照射工具包括由外径为0.1mm-20mm限定的窄管（内窥镜探针）（7），具有电磁波照射端（3），其被配置为照射具有频率相等的电磁波（2） 到微管（7）的顶部的微生物（11）的特征频率和被配置为产生电磁波（2）并将电磁波（2）提供给电磁波的电磁波产生单元（3） 波辐射终端（3）。 电磁波照射工具选择性地将微生物（11）驱动到共振振动状态，从而可以破坏微生物（11），而不会对用于医疗治疗由微生物（11）诱导的疾病的生物体（1）造成损害。

公开(公告)号：US5557119A

公开(公告)日：1996-09-17

申请号：US449525

申请日：1995-05-24

申请人： Jun-ichi Nishizawa

发明人： Jun-ichi Nishizawa

IPC分类号： H01L29/10 ,  H01L29/772 ,  H01L29/808

CPC分类号： H01L29/7722 ,  H01L29/1066

摘要： A field effect transistor has the property that the product of its active total series resistance and its true transconductance is less than one throughout the entire range of drain voltage in the operative state of this transistor, the active total series resistance being the sum of the active resistance from source to channel, the active resistance of this channel and the active resistance from channel to drain. In order to prevent an excessive increase in the active resistance of the channel, the channel is made to have an impurity concentration as low as less than 10.sup.15 atoms/cm.sup.3, preferably less than 10.sup.14 atoms/cm.sup.3, so that the depletion layers extending from the gates grow extensively to become contiguous in such fashion in response to a small increase in the reverse gate voltage applied, that no narrow lengthy path is formed between the depletion layers. As a result, the field effect transistor of this invention has an unsaturated drain current versus drain voltage characteristic.

摘要翻译： gA场效应晶体管具有在该晶体管的工作状态下，其有源总串联电阻与其真正跨导的乘积在整个漏极电压范围内小于1的特性，有源总串联电阻为有源总串联电阻的总和 从源极到通道的电阻，该通道的有源电阻和从通道到漏极的有源电阻。 为了防止通道的有效电阻的过度增加，使沟道的杂质浓度低至1015原子/ cm3，优选小于1014原子/ cm3，从而从 栅极响应于所施加的反向栅极电压的小的增加而广泛地生长成为连续的，在耗尽层之间不形成窄的漫长路径。 结果，本发明的场效晶体管具有不饱和漏极电流对漏极电压特性。

公开(公告)号：US5338389A

公开(公告)日：1994-08-16

申请号：US49661

申请日：1993-04-21

申请人： Jun-ichi Nishizawa ,  Toru Kurabayashi

发明人： Jun-ichi Nishizawa ,  Toru Kurabayashi

IPC分类号： C30B25/02 ,  C30B25/10 ,  C30B25/14

CPC分类号： C30B25/02 ,  C30B25/14 ,  C30B29/40

摘要： In a method of epitaxially growing a compound crystal, a plurality of crystal component gasses of a compound and reaction gas chemically reacting with the crystal component gasses are individually directed, in the predetermined order, onto a substrate crystal heated under vacuum. The crystal compound gasses and the reaction gas may be overlapped with each other. In a doping method in the above-described epitaxial growth method, the crystal component gasses and the compound gas of dopant are directed onto the substrate crystal and, subsequently, reaction gas, which chemically reacts with the compound gasses, is directed onto the substrate crystal. Also in this case, the reaction gas may be in overlapped relation to the component gas of dopant.

摘要翻译： 在外延生长化合物晶体的方法中，化合物的多个晶体组分气体和与晶体组分气体化学反应的反应气体以预定顺序分别指向在真空下加热的衬底晶体上。 晶体复合气体和反应气体可以彼此重叠。 在上述外延生长方法中的掺杂方法中，将晶体成分气体和掺杂剂的复合气体引导到衬底晶体上，随后将与化合物气体发生化学反应的反应气体导向衬底晶体 。 在这种情况下，反应气体也可能与掺杂剂的成分气体重叠。

公开(公告)号：US5323028A

公开(公告)日：1994-06-21

申请号：US947939

申请日：1992-09-21

申请人： Jun-ichi Nishizawa ,  Sohbe Suzuki

发明人： Jun-ichi Nishizawa ,  Sohbe Suzuki

IPC分类号： H01L29/74 ,  H01L29/739 ,  H01L29/749 ,  H01L29/72 ,  H01L29/76

CPC分类号： H01L29/7392

摘要： In a MOS controlled power device, or MOS composite a static induction thyristor, an static induction thyristor (SI thyristor) unit, a MOS transistor connected in cascode relation to the SI thyristor unit and a voltage regulation element are merged onto the single monolithic chip. The SI thyristor unit has a cathode region of first conductivity type having high impurity concentration, an anode and a gate regions of second conductivity type having high impurity concentration, and a channel region of first conductivity type having low impurity concentration. The MOS transistor has a drain region which is the same region as the cathode region, a well or a base of second conductivity type formed adjacent to the channel region of the SI thyristor unit, and a source region of first conductivity type having high impurity concentration. The source region is formed within the well or above the base. The voltage regulation element comprises a first semiconductor region of second conductivity type, and a second semiconductor region of first conductivity type, both having high impurity concentration.

摘要翻译： 在MOS控制功率器件或MOS复合静态感应晶闸管中，静态感应晶闸管（SI晶闸管）单元，与SI晶闸管单元并联连接的MOS晶体管和电压调节元件合并到单个单片芯片上。 SI晶闸管单元具有具有高杂质浓度的第一导电类型的阴极区域，具有高杂质浓度的阳极和第二导电类型的栅极区域以及杂质浓度低的第一导电类型的沟道区域。 MOS晶体管具有与阴极区相同的漏极区域，与SI晶闸管单元的沟道区相邻形成的第二导电类型的阱或基极，以及具有高杂质浓度的第一导电型的源极区 。 源区形成在井内或基底之上。 电压调节元件包括第二导电类型的第一半导体区域和具有高杂质浓度的第一导电类型的第二半导体区域。

公开(公告)号：US4909998A

公开(公告)日：1990-03-20

申请号：US351340

申请日：1989-05-09

申请人： Jun-ichi Nishizawa

发明人： Jun-ichi Nishizawa

IPC分类号： C30B9/06 ,  C30B11/00 ,  C30B11/08 ,  C30B29/48 ,  H01L21/02

CPC分类号： C30B11/08 ,  C30B11/00 ,  C30B11/003 ,  C30B29/48 ,  Y10S117/90 ,  Y10S117/902 ,  Y10S117/906 ,  Y10T117/1092

摘要： In performing a solution growth of a Group II-VI compound semiconductor crystal by relying on the temperature difference technique under controlled vapor pressure on a solution growth apparatus having a recrystallizing zone, a source crystal supply zone and a vapor pressure controlling zone enclosed in a growth quartz tube and placed under different temperatures for the respective zones, wherein a heat sink is provided at the bottom end portion of the recrystallizing zone to cause a thermal flow to pass therethrough to the outside of the whole apparatus to insure that a single crystal will grow from this bottom end portion of the zone. The quartz tube may be enclosed in a pressure-resistant tube to apply a pressure to the growth quartz tube externally thereof to avoid its destruction to enable the growth to be performed at a high temperature to obtain a high growth rate. Thus, a large size crystal having a good crystal perfection can be grown.

摘要翻译： 在通过在具有重结晶区域的溶液生长装置的控制蒸气压下依靠温度差技术进行II-VI族化合物半导体晶体的溶液生长，源晶体供给区和封闭在生长中的蒸气压控制区 石英管，并在各个区域的不同温度下放置，其中在再结晶区的底端部分设置散热器，以使热流通过其流到整个设备的外部，以确保单晶将生长 从该区域的该底端部分。 石英管可以封闭在耐压管中，以向其外部的生长石英管施加压力以避免其破坏，以使得能够在高温下进行生长以获得高生长速率。 因此，可以生长具有良好晶体完整性的大尺寸晶体。

公开(公告)号：US4870028A

公开(公告)日：1989-09-26

申请号：US322515

申请日：1989-03-13

申请人： Jun-ichi Nishizawa ,  Hisao Kondoh

发明人： Jun-ichi Nishizawa ,  Hisao Kondoh

CPC分类号： H01L29/7392 ,  H01L29/1066

摘要： A double gate static induction thyristor comprises an n.sup.- semiconductor substrate having first and second principal surfaces opposite to each other. An n.sup.- epitaxial semiconductor layer is formed on the first principal surface of the substrate, and a p.sup.- epitaxial semiconductor layer is formed on the second principal surface of the substrate. A cathode electrode is deposited on the surface of the n.sup.- epitaxial layer, and an anode electrode is deposited on the surface of the p.sup.- epitaxial layer. In addition, a first gate electrode is formed on the first principal surface of the substrate, and a second gate electrode is formed on the second principal surface of the substrate.

公开(公告)号：US4799090A

公开(公告)日：1989-01-17

申请号：US314496

申请日：1981-10-23

申请人： Jun-ichi Nishizawa

发明人： Jun-ichi Nishizawa

IPC分类号： H01L29/80 ,  H01L21/331 ,  H01L29/08 ,  H01L29/73 ,  H01L29/739 ,  H01L29/772 ,  H01L29/78 ,  H01L29/788 ,  H01L29/88 ,  H01L29/20 ,  H01L29/36

CPC分类号： H01L29/7884 ,  H01L29/0843 ,  H01L29/7391 ,  H01L29/7392 ,  H01L29/7722

摘要： A tunnel injection controlling type semiconductor device comprising a source semiconductor region having a certain conductivity type for supplying carriers, a drain semiconductor region for receiving the carriers, and a gate electrode for controlling the flow of these carriers. A highly-doped semiconductor region having a conductivity type opposite to that of the source semiconductor region is provided in contact with the source region or contained locally in the source region to cause tunnel injection of carriers. The potential level of this highly-doped region is varied by virtue of the static induction effect exerted by the voltage applied to the gate electrode which is provided at a site close to but separate from the highly-doped region, and to the drain semiconductor region.

摘要翻译： 一种隧道注入控制型半导体器件，包括具有用于提供载流子的一定导电类型的源极半导体区域，用于接收载流子的漏极半导体区域和用于控制这些载流子流动的栅电极。 提供具有与源极半导体区域相反的导电类型的高掺杂半导体区域与源极区域接触或局部包含在源极区域中以引起载流子的隧道注入。 这个高度掺杂区域的电位电平由于施加到栅极电极施加的静电感应效应而变化，栅极电极设置在靠近但与高度掺杂区域分开的位置处，并且与漏极半导体区域 。

公开(公告)号：US4720735A

公开(公告)日：1988-01-19

申请号：US903890

申请日：1986-09-04

申请人： Jun-ichi Nishizawa

发明人： Jun-ichi Nishizawa

IPC分类号： H01L31/10 ,  H01L31/0352 ,  H01L31/11 ,  H01L29/80

CPC分类号： H01L31/035281 ,  H01L31/1105 ,  Y02E10/50

摘要： In a phototransistor which comprises an emitter, a collector and a base, base portions 20 and 21 are made unequal in impurity density, by which minority carriers of optically excited carriers are stored in the high impurity density regions 20 of the base and majority carriers are permitted to easily pass through the low impurity sensity regions 21 of the base, and voltages of the high and low impurity density regions are coupled together. A very high-sensitivity and high-speed operation can be achieved.

摘要翻译： PCT No.PCT / JP83 / 00290 Sec。 1984年4月30日 102（e）日期1984年4月30日PCT提交1983年8月31日PCT公布。 公开号WO84 / 01055 日期为1984年3月15日。在包括发射极，集电极和基极的光电晶体管中，基极部分20和21的杂质密度不等于光激发载流子的少数载流子被储存在高杂质密度区域20中 的基极和多数载流子容许通过基极的低杂质感度区域21，并且高和低杂质浓度区域的电压耦合在一起。 可以实现非常高灵敏度和高速度的操作。

公开(公告)号：US4692194A

公开(公告)日：1987-09-08

申请号：US904759

申请日：1986-09-25

申请人： Jun-ichi Nishizawa

发明人： Jun-ichi Nishizawa

IPC分类号： C30B19/00 ,  C30B19/04 ,  C30B29/40 ,  H01L21/208

CPC分类号： C30B19/04 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02625 ,  H01L21/02628 ,  Y10S117/907 ,  Y10S438/915

摘要： In a solution growth method to perform an epitaxial growth by doping an amphoteric impurity into a Group III-V compound semiconductor crystal, vapor of a crystal-constituting Group V element is supplied to the solution, during the growth process, from above this solution under a controlled vapor pressure, while maintaining the growth temperature at a constant value by relying on, for example, a temperature difference technique, whereby the conductivity type in the grown crystal layer can be controlled easily as desired, and also a pn junction can be conveniently formed in the grown crystal.

摘要翻译： 在通过将两性杂质掺杂到III-V族化合物半导体晶体中进行外延生长的溶液生长方法中，在生长过程中，从该溶液的上方向溶液中提供晶体构成的V族元素的蒸气 通过依靠例如温差技术将生长温度保持在恒定值，由此可以根据需要容易地控制生长晶体层中的导电类型，并且还可以方便地进行pn结的控制蒸气压 在生长的水晶中形成。

公开(公告)号：US4686555A

公开(公告)日：1987-08-11

申请号：US556347

申请日：1983-11-30

申请人： Atsushi Yusa ,  Jun-ichi Nishizawa ,  Sohbe Suzuki ,  Takashige Tamamushi

发明人： Atsushi Yusa ,  Jun-ichi Nishizawa ,  Sohbe Suzuki ,  Takashige Tamamushi

IPC分类号： H01L27/146 ,  H01L29/772 ,  H01L31/112 ,  H01L31/113 ,  H04N5/30 ,  H04N5/335 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L29/7722 ,  H01L27/14679 ,  H01L31/1126 ,  H01L31/1136 ,  H04N5/30

摘要： A solid state image sensor comprising static induction transistors each forming a picture element.Each static induction transistor in the solid state image sensor has a lateral structure in which the source and drain regions are formed by surface regions provided on the same side in an epitaxial layer forming the channel region and a signal charge storage gate region are formed by a buried gate region provided under the channel region and a surface gate region provided on the channel region, so that the source-drain current flows in parallel to the surface of epitaxial layer and is effectively controlled between the buried and surface gate regions.

摘要翻译： 一种固态图像传感器，包括各自形成像素的静态感应晶体管。 固态图像传感器中的每个静态感应晶体管具有横向结构，其中源极和漏极区域由形成沟道区的外延层中设置在同一侧的表面区域形成，并且信号电荷存储栅极区域由 掩埋栅极区域和设置在沟道区域上的表面栅极区域，使得源极 - 漏极电流平行于外延层的表面流动并且被有效地控制在掩埋栅极区域和表面栅极区域之间。