Semiconductor optical integrated device
    53.
    发明授权
    Semiconductor optical integrated device 有权
    半导体光学集成器件

    公开(公告)号:US08964809B2

    公开(公告)日:2015-02-24

    申请号:US13597375

    申请日:2012-08-29

    摘要: A semiconductor optical integrated device includes a substrate having a main surface with a first and second regions arranged along a waveguiding direction; a gain region including a first cladding layer, an active layer, and a second cladding layer arranged on the first region of the main surface; and a wavelength control region including a third cladding layer, an optical waveguide layer, and a fourth cladding layer arranged on the second region of the main surface and including a heater arranged along the optical waveguide layer. The substrate includes a through hole extending from a back surface of the substrate in the thickness direction and reaching the first region. A metal member is arranged in the through hole. The metal member extends from the back surface of the substrate in the thickness direction and is in contact with the first cladding layer.

    摘要翻译: 半导体光学集成器件包括具有沿着波导方向布置的具有第一和第二区域的主表面的衬底; 包括布置在所述主表面的第一区域上的第一包层,有源层和第二包层的增益区域; 以及包括布置在主表面的第二区域上的第三包层,光波导层和第四包层的波长控制区域,并且包括沿着光波导层布置的加热器。 基板包括从基板的厚度方向的背面延伸并到达第一区域的通孔。 金属构件布置在通孔中。 金属部件在厚度方向上从基板的背面延伸并与第一包覆层接触。

    Communication device and communication method
    54.
    发明授权
    Communication device and communication method 有权
    通信设备和通信方式

    公开(公告)号:US08565131B2

    公开(公告)日:2013-10-22

    申请号:US13101825

    申请日:2011-05-05

    IPC分类号: H04B7/00

    摘要: A communication device has a first communication section that supports a first communication mode having a low communication rate and a second communication section that supports a second communication mode having a higher communication rate than the first communication mode. The communication device includes a packet generation section and a communication control section. The packet generation section generates a first portion containing authentication information used for connection authentication for the second communication mode and a second portion other than the first portion. The communication control section performs control to cause the first communication section to transmit the first portion and to cause the second communication section to transmit the second portion after the connection authentication succeeds using the authentication information contained in the first portion.

    摘要翻译: 通信装置具有支持具有低通信速率的第一通信模式的第一通信部分和支持具有比第一通信模式更高通信速率的第二通信模式的第二通信部分。 通信设备包括分组产生部分和通信控制部分。 分组产生部分生成包含用于第二通信模式的连接认证的认证信息的第一部分和除了第一部分之外的第二部分。 通信控制部进行控制,使得第一通信部发送第一部分,并且在使用包含在第一部分中的认证信息进行连接认证成功之后使第二通信部发送第二部分。

    Protective element and secondary battery device
    55.
    发明授权
    Protective element and secondary battery device 有权
    保护元件和二次电池装置

    公开(公告)号:US08547195B2

    公开(公告)日:2013-10-01

    申请号:US12677492

    申请日:2009-05-14

    摘要: A protection element and a secondary battery device employing the protection element are provided for stably retaining a flux on a soluble conductor at a predetermined position, so as to enable appropriate blowout of the soluble conductor in the event of an abnormality. The protection element has a soluble conductor which is disposed on an insulation baseboard, and which is connected to a power supply path of a device targeted to be protected, and which causes a blowout when a predetermined abnormal electric power amount is supplied. A flux is coated on a surface of the soluble conductor, and an insulation cover member is mounted on the baseboard and covers the soluble conductor. The protection element also includes a stepped portion for retaining the flux at a predetermined position in contact with the flux, and the stepped portion is formed opposite to the soluble conductor on an interior face of the insulation cover member.

    摘要翻译: 提供一种使用保护元件的保护元件和二次电池装置,用于将预定位置上的可溶性导体上的助熔剂稳定地保持,从而能够在发生异常时适当地喷出可溶性导体。 保护元件具有设置在绝缘基板上的可溶性导体,其与被保护对象的装置的电源路径连接,当提供规定的异常电力量时,产生喷出。 助焊剂涂覆在可溶性导体的表面上,绝缘覆盖件安装在基板上并覆盖可溶性导体。 保护元件还包括用于将焊剂保持在与焊剂接触的预定位置的阶梯部分,并且阶梯部分形成在绝缘覆盖部件的内表面上与可溶性导体相对。

    Information processing apparatus and method and program
    56.
    发明授权
    Information processing apparatus and method and program 有权
    信息处理装置及方法及程序

    公开(公告)号:US08301124B2

    公开(公告)日:2012-10-30

    申请号:US12365379

    申请日:2009-02-04

    IPC分类号: H04M3/42

    摘要: An information processing apparatus for communicating with a different information processing apparatus, includes: a first connection establishment block configured to control a first communication section, which carries out nearby wireless communication for delivering and accepting information to and from the different information processing apparatus positioned near to the information processing apparatus, to establish a connection for the nearby wireless communication; an acquisition block configured to acquire setting information for short range wireless communication which exhibits a wire communication range than the nearby wireless communication and capability information regarding the capacity of the different information processing apparatus from the different information processing apparatus through the nearby wireless communication; and a second connection establishment block configured to control a second communication section, which carries out the short range wireless communication, based on the setting information and the capability information to establish a connection for the short range wireless communication.

    摘要翻译: 一种用于与不同的信息处理装置进行通信的信息处理装置,包括:第一连接建立块,被配置为控制第一通信部分,其执行附近的无线通信,用于向位于附近的不同信息处理装置传送和接收信息; 信息处理装置,用于建立附近无线通信的连接; 获取块,被配置为从不同的信息处理设备通过附近的无线通信获取与不同的信息处理设备的容量相关的与附近的无线通信相关的有线通信范围的短距离无线通信的设置信息和能力信息; 以及第二连接建立块,其被配置为基于所述设置信息和能力信息来控制执行所述短距离无线通信的第二通信部分,以建立所述短距离无线通信的连接。

    Information management apparatus, method, and computer program product, and communication processing apparatus, method, and computer program product
    57.
    发明授权
    Information management apparatus, method, and computer program product, and communication processing apparatus, method, and computer program product 有权
    信息管理装置,方法和计算机程序产品,以及通信处理装置,方法和计算机程序产品

    公开(公告)号:US08135343B2

    公开(公告)日:2012-03-13

    申请号:US12480295

    申请日:2009-06-08

    IPC分类号: H04B5/00

    摘要: An information management apparatus includes a communication unit configured to receive, from a plurality of communication processing apparatuses, a plurality of pieces of communication history data of near-field communication performed in the plurality of communication processing apparatuses; a data comparison unit configured to perform comparison of the plurality of pieces of communication history data received by the communication unit; and a data registration unit configured to register a plurality of pieces of user information associated with the plurality of communication processing apparatuses as a group in a database on condition that it is verified by the data comparison unit, in accordance with the plurality of pieces of communication history data of the near-field communication, that near-field communication has been performed between the plurality of communication processing apparatuses.

    摘要翻译: 信息管理装置包括:通信单元,被配置为从多个通信处理装置接收在所述多个通信处理装置中执行的近场通信的多条通信历史数据; 数据比较单元,被配置为执行由所述通信单元接收的所述多条通信历史数据的比较; 以及数据登记单元,被配置为在数据比较单元验证的条件下,根据多条通信信息,将与多个通信处理装置相关联的多条用户信息作为一组登记在数据库中 近场通信的历史数据,在多个通信处理装置之间进行了近场通信。

    Method of making PIN-type photo detecting element with a controlled thickness of window semiconductor layer
    58.
    发明授权
    Method of making PIN-type photo detecting element with a controlled thickness of window semiconductor layer 有权
    制造具有受控厚度的窗口半导体层的PIN型光电检测元件的方法

    公开(公告)号:US08105866B2

    公开(公告)日:2012-01-31

    申请号:US12711881

    申请日:2010-02-24

    摘要: A semiconductor photo detecting element includes a PIN-type photo detecting element and window semiconductor layer. The PIN-type photo detecting element has a semiconductor substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The first semiconductor layer is provided on the semiconductor substrate, is lattice-matched to the semiconductor substrate, includes a first conductivity type dopant, and has first band gap energy. The second semiconductor layer is provided on the first semiconductor layer, has the first band gap energy, and has a concentration of the first conductivity type dopant lower than that of the first semiconductor layer or is substantially undoped. The third semiconductor layer is provided on the second semiconductor layer. The window semiconductor layer has second band gap energy larger than the first band gap energy at a light-incoming side with respect to the second semiconductor layer and has a thickness of 5 nm to 50 nm.

    摘要翻译: 半导体光电检测元件包括PIN型光检测元件和窗半导体层。 PIN型光检测元件具有半导体衬底,第一半导体层,第二半导体层和第三半导体层。 第一半导体层设置在半导体衬底上,与半导体衬底晶格匹配,包括第一导电型掺杂剂,并且具有第一带隙能量。 第二半导体层设置在第一半导体层上,具有第一带隙能量,并且第一导电类型掺杂物的浓度低于第一半导体层的浓度或基本上未掺杂。 第三半导体层设置在第二半导体层上。 窗口半导体层具有比相对于第二半导体层的光入射侧的第一带隙能量大的第二带隙能量,并且具有5nm至50nm的厚度。

    Semiconductor photodetector and method for manufacturing the same
    59.
    发明申请
    Semiconductor photodetector and method for manufacturing the same 有权
    半导体光电探测器及其制造方法

    公开(公告)号:US20110068428A1

    公开(公告)日:2011-03-24

    申请号:US12926484

    申请日:2010-11-22

    IPC分类号: H01L31/107 H01L31/18

    摘要: In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

    摘要翻译: 为了通过防止具有诸如台面APD的台面结构的半导体光电探测器中的边缘击穿来提高可靠性,半导体光电检测器包括形成在形成在半导体衬底上的第一导电类型的第一半导体层上的台面结构,台面 包括用于吸收光的光吸收层的结构,用于降低电场强度的电场缓冲层,用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层,其中雪崩的厚度 在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。