Manufacturing process for thin film bulk acoustic resonator (FBAR) filters
    51.
    发明授权
    Manufacturing process for thin film bulk acoustic resonator (FBAR) filters 有权
    薄膜体声波谐振器(FBAR)滤波器的制造工艺

    公开(公告)号:US07802349B2

    公开(公告)日:2010-09-28

    申请号:US11748970

    申请日:2007-05-15

    Abstract: Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.

    Abstract translation: 在具有顶面的基板上制造声学谐振器的方法。 首先,产生上表面的凹陷。 接下来,凹陷填充有牺牲材料。 填充的凹陷具有与所述基底的所述顶表面相对的上表面水平。 接下来,在所述上表面上沉积第一电极。 然后,在所述第一电极上沉积一层压电材料。 使用质量负载剥离工艺将第二电极沉积在压电材料层上。

    Acoustic resonator performance enhancement using filled recessed region
    55.
    发明授权
    Acoustic resonator performance enhancement using filled recessed region 有权
    使用填充凹陷区域的声谐振器性能提升

    公开(公告)号:US07369013B2

    公开(公告)日:2008-05-06

    申请号:US11100311

    申请日:2005-04-06

    Abstract: An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and a fill region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The fill region is in one of the first and second electrodes.

    Abstract translation: 声谐振器,其包括基板,第一电极,压电材料层,第二电极和填充区域。 第一电极与衬底相邻,并且第一电极具有外周边。 压电层与第一电极相邻。 第二电极邻近压电层,第二电极具有外周。 填充区域位于第一和第二电极之一中。

    HBAR oscillator and method of manufacture
    56.
    发明申请
    HBAR oscillator and method of manufacture 有权
    HBAR振荡器及其制造方法

    公开(公告)号:US20080079516A1

    公开(公告)日:2008-04-03

    申请号:US11540413

    申请日:2006-09-28

    CPC classification number: H03H3/04 H03H9/105 H03H9/605

    Abstract: An oscillator including a high tone bulk acoustic resonator (HBAR), a film bulk acoustic resonator (FBAR) filter and a method of fabrication are described.

    Abstract translation: 描述了包括高音体积声共振器(HBAR),薄膜体声波谐振器(FBAR)滤波器和制造方法的振荡器。

    Vertically separated acoustic filters and resonators
    58.
    发明授权
    Vertically separated acoustic filters and resonators 失效
    垂直分离的声学滤波器和谐振器

    公开(公告)号:US07312675B2

    公开(公告)日:2007-12-25

    申请号:US11373355

    申请日:2006-03-09

    Abstract: An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.

    Abstract translation: 公开了一种包括垂直分离的声谐振器的装置。 该装置包括在基板上的第一声谐振器和在第一声谐振器之上垂直分离的第二声谐振器。 由于谐振器在另一个上方垂直分离,所以实现谐振器所需的总面积减小,从而实现了芯片尺寸和成本的节省。 垂直分离的谐振器由制造在衬底上或在谐振器上的支座支撑。

    Method for fabricating an acoustical resonator on a substrate
    59.
    发明授权
    Method for fabricating an acoustical resonator on a substrate 有权
    在基板上制造声学谐振器的方法

    公开(公告)号:US07275292B2

    公开(公告)日:2007-10-02

    申请号:US10384199

    申请日:2003-03-07

    Abstract: Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.

    Abstract translation: 在具有顶面的基板上制造声学谐振器的方法。 首先,产生上表面的凹陷。 接下来,凹陷填充有牺牲材料。 填充的凹陷具有与所述基底的所述顶表面相对的上表面水平。 接下来,在所述上表面上沉积第一电极。 然后,在所述第一电极上沉积一层压电材料。 使用质量负载剥离工艺将第二电极沉积在压电材料层上。

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