公开(公告)号：US5854097A

公开(公告)日：1998-12-29

申请号：US440917

申请日：1995-05-15

申请人： Tadahiro Ohmi ,  Mamoru Miyawaki

发明人： Tadahiro Ohmi ,  Mamoru Miyawaki

IPC分类号： H01L29/73 ,  H01L21/283 ,  H01L21/316 ,  H01L21/331 ,  H01L21/336 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/737 ,  H01L29/78 ,  H01L21/338

CPC分类号： H01L29/66287 ,  H01L21/31683 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/41775 ,  H01L29/42304 ,  H01L29/66272 ,  H01L29/66545 ,  H01L29/66613 ,  H01L29/66628 ,  H01L29/7375 ,  H01L29/7378 ,  H01L2924/0002 ,  Y10S148/10 ,  Y10S438/926 ,  Y10S438/951

摘要： A device having, at least, a first film having a surface on which neither a natural oxide film nor impurity grains caused by a resist residue is or are present, and a conductive material layer formed on a surface adjacent to the surface of the first film, wherein an insulative compound film is formed on a surface of the conductive material layer by a surface reaction with the conductive material layer, and a predetermined second film required for an arrangement is formed on the surface of the first film.

摘要翻译： 一种具有至少具有其表面上没有自然氧化物膜和由抗蚀剂残渣引起的杂质颗粒的表面的第一膜的器件，以及形成在与第一膜的表面相邻的表面上的导电材料层 其中通过与导电材料层的表面反应在导电材料层的表面上形成绝缘化合物膜，并且在第一膜的表面上形成预定的第二膜。

公开(公告)号：US5808336A

公开(公告)日：1998-09-15

申请号：US435803

申请日：1995-05-05

申请人： Mamoru Miyawaki

发明人： Mamoru Miyawaki

IPC分类号： G11C17/00 ,  G11C16/04 ,  H01L21/8247 ,  H01L21/84 ,  H01L27/115 ,  H01L27/12 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/115 ,  H01L21/84 ,  H01L27/1203 ,  H01L2924/0002

摘要： A storage device comprises, on a substrate, a first semiconductor region of one conductivity type, second and third semiconductor regions of a conductivity type opposite to the one conductivity type contiguous to the first semiconductor region, a first electrode which is formed on a region for isolating the second and third semiconductor regions via an insulating layer, and a second electrode formed on the first electrode, but spaced therefrom by an insulating layer. The resistance between the first and second electrodes is selectively changed from a high-resistance state to a low-resistance state is needed, to record a bit of data.

摘要翻译： 一种存储装置，在基板上包括一个导电类型的第一半导体区域，与该第一半导体区域相邻的导电类型相反的导电类型的第二和第三半导体区域，形成在第一半导体区域 通过绝缘层隔离第二和第三半导体区域，以及形成在第一电极上但与绝缘层隔开的第二电极。 需要将第一和第二电极之间的电阻从高电阻状态选择性地改变为低电阻状态，以记录位数据。

公开(公告)号：US5793452A

公开(公告)日：1998-08-11

申请号：US915663

申请日：1997-08-21

申请人： Mamoru Miyawaki

发明人： Mamoru Miyawaki

IPC分类号： G02B26/08 ,  G02F1/133 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/00 ,  H01L29/786 ,  H04N5/74 ,  G02F1/1333

CPC分类号： G02F1/133385

摘要： In a display device using a liquid-crystal panel, pixel electrodes for reflecting illuminating light, transistors for switching corresponding pixels, and a peripheral driving circuit are integrated on a Si semiconductor substrate. The angle of the surface of connecting portions of a jig for fixing and supporting the Si semiconductor substrate is made to be different from the angle of the surfaces of the pixel electrodes. A cooling device is mounted on the back of the Si semiconductor substrate.

摘要翻译： 在使用液晶面板的显示装置中，用于反射照明光的像素电极，用于切换对应像素的晶体管和外围驱动电路集成在Si半导体衬底上。 用于固定和支撑Si半导体衬底的夹具的连接部分的表面的角度与像素电极的表面的角度不同。 冷却装置安装在Si半导体衬底的背面。

公开(公告)号：US5726439A

公开(公告)日：1998-03-10

申请号：US717680

申请日：1996-09-23

申请人： Mamoru Miyawaki ,  Isamu Ueno

发明人： Mamoru Miyawaki ,  Isamu Ueno

IPC分类号： H01L27/148 ,  H04N1/028 ,  H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/357 ,  H04N5/363 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378 ,  H01L27/14 ,  H01J40/14

CPC分类号： H04N3/1512 ,  H04N3/155

摘要： An image sensor in which a plurality of photoelectric conversion elements are arranged in a two-dimensional form and which has reading means for enabling output signals from the elements in the row direction and output signals from the elements in the column direction to be read out in parallel is provided.

摘要翻译： 一种图像传感器，其中多个光电转换元件以二维形式布置，并且具有读取装置，用于使来自行方向上的元件的输出信号和来自列方向上的元件的输出信号被读出 并行提供。

公开(公告)号：US5644373A

公开(公告)日：1997-07-01

申请号：US312172

申请日：1994-09-26

申请人： Teruhiko Furushima ,  Shigetoshi Sugawa ,  Moriyuki Okamura ,  Masaru Kamio ,  Mamoru Miyawaki

发明人： Teruhiko Furushima ,  Shigetoshi Sugawa ,  Moriyuki Okamura ,  Masaru Kamio ,  Mamoru Miyawaki

IPC分类号： G02F1/1333 ,  G02F1/1362 ,  G02F1/13

CPC分类号： G02F1/1333 ,  G02F1/13454

摘要： A liquid crystal device having a pair of substrates opposed to each other at a predetermined distance from each other, and a liquid crystal enclosed between the pair of substrates. The pair of substrates are formed of different materials, and the difference between the thermal expansion coefficients of the substrates is set within the range of .+-.50% of the thermal expansion coefficient of one of the two substrates. Misalignment between the substrates is thereby prevented.

摘要翻译： 一种液晶装置，其具有彼此相对的彼此相对的一对基板以及一对基板之间的液晶。 一对基板由不同的材料形成，并且基板的热膨胀系数之间的差设定在两个基板之一的热膨胀系数的+/- 50％的范围内。 由此防止了基板之间的不对准。

公开(公告)号：US5644370A

公开(公告)日：1997-07-01

申请号：US675807

申请日：1996-07-05

申请人： Mamoru Miyawaki ,  Shigetoshi Sugawa

发明人： Mamoru Miyawaki ,  Shigetoshi Sugawa

IPC分类号： G02F1/1333 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/136

CPC分类号： G02F1/13454 ,  G02F1/1368 ,  G02F1/133345 ,  G02F1/133512 ,  G02F2202/105

摘要： A liquid crystal display apparatus has LOCOS insulating layers having an increased thickness under pixel electrodes, the LOCOS insulating layers being formed by LOCOS-oxidizing a Si layer formed on a glass substrate. Because of the thick LOCOS insulating layers, the pixel electrodes are provided at an elevated position which is substantially the same level as the top surfaces of the TFT portions. The apparatus also has metal layers of W, Al or the like which connect the elevated pixel electrodes and the drains. After W, Al or the like is deposited on the top surface of the drains, ITO deposited to form the pixel electrodes so that the electrodes are connected to the deposited metal layers.

摘要翻译： 液晶显示装置具有在像素电极下具有增加的厚度的LOCOS绝缘层，LOCOS绝缘层通过LOCOS氧化形成在玻璃基板上的Si层形成。 由于厚的LOCOS绝缘层，像素电极设置在与TFT部分的上表面基本上相同的高度位置。 该装置还具有连接升高的像素电极和下水道的W，Al等的金属层。 在W，Al等沉积在排水管的顶表面上，沉积以形成像素电极的ITO，使得电极连接到沉积的金属层。

公开(公告)号：US5539196A

公开(公告)日：1996-07-23

申请号：US412102

申请日：1995-03-28

申请人： Mamoru Miyawaki ,  Isamu Ueno

发明人： Mamoru Miyawaki ,  Isamu Ueno

IPC分类号： H04N1/028 ,  H04N1/401 ,  H04N5/335 ,  H04N5/353 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378

CPC分类号： H04N5/3741 ,  H04N5/3692 ,  H04N5/3745 ,  H04N5/37452 ,  H04N5/37457 ,  H04N5/378

摘要： A photo-electric conversion apparatus having a plurality of photo-electric conversion elements is provided with an amplifier which can externally control a gain thereof, at an output terminal of each of the photo-electric conversion elements.

摘要翻译： 具有多个光电转换元件的光电转换装置设置有可以在每个光电转换元件的输出端子处外部控制其增益的放大器。

公开(公告)号：US5485004A

公开(公告)日：1996-01-16

申请号：US432726

申请日：1995-05-02

申请人： Kenji Suzuki ,  Mamoru Miyawaki ,  Akira Akashi ,  Toshiki Nakayama

发明人： Kenji Suzuki ,  Mamoru Miyawaki ,  Akira Akashi ,  Toshiki Nakayama

IPC分类号： G02B7/34 ,  H01L27/148 ,  H04N5/232 ,  H01J40/14

CPC分类号： H04N5/23212 ,  G02B7/346 ,  H01L27/148

摘要： A photoelectric sensor device has a two-dimensional arrangement of a multiplicity of unit structures each including a pixel. The sensor device includes a circuit for simultaneously designating a plurality of pixel blocks of any desired sizes at any desired positions on the two dimensional arrangement of unit structures, each pixel block being composed of pixels which are to be actually used. The sensor device also includes a monitor output circuit for outputting, for each of the pixel blocks, at least one monitor output as the representative of the amounts of charges accumulated in the pixels in each of the pixel blocks. The sensor device further includes a circuit which executes the control of accumulation of charges and the control of outputting of the image signals on each of the pixel blocks independently of other pixel blocks. Disclosed also is a focus detection system using the sensor device.

摘要翻译： 光电传感器装置具有各自包括像素的多个单位结构的二维排列。 传感器装置包括一个电路，用于在单元结构的二维排列上的任何期望位置同时指定任何所需尺寸的多个像素块，每个像素块由实际使用的像素构成。 传感器装置还包括监视器输出电路，用于为每个像素块输出至少一个监视器输出，作为在每个像素块中的像素中积累的电荷量的代表。 传感器装置还包括执行电荷累积控制的电路和独立于其它像素块的每个像素块上输出图像信号的控制。 还公开了使用该传感器装置的焦点检测系统。

公开(公告)号：US5428237A

公开(公告)日：1995-06-27

申请号：US158371

申请日：1993-11-29

申请人： Hiroshi Yuzurihara ,  Mamoru Miyawaki ,  Akira Ishizaki ,  Genzo Momma ,  Tetsunobu Kochi

发明人： Hiroshi Yuzurihara ,  Mamoru Miyawaki ,  Akira Ishizaki ,  Genzo Momma ,  Tetsunobu Kochi

IPC分类号： G11C17/16 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/112 ,  H01L27/12 ,  H01L29/06 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/7851 ,  G11C17/16 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/8238 ,  H01L21/823821 ,  H01L29/0653 ,  H01L29/66651 ,  H01L29/66795 ,  H01L29/7834 ,  H01L29/78612 ,  H01L29/78639 ,  H01L27/112 ,  H01L27/1211 ,  Y10S257/901

摘要： An insulated gate type transistor includes a plurality of major electrode regions, a channel region provided between the plurality of major electrode regions, a gate electrode provided on the channel region with a gate insulating film therebetween, and a semiconductor region provided in contact with the channel region, the semiconductor region having the same conductivity type as that of the channel region and a higher impurity concentration than the channel region. The gate electrode has at least two opposing portions. The plurality of major electrode regions are provided on an substrate insulating film. The transistor is activated in a state where the semiconductor region is maintained at a predetermined voltage. A semiconductor device includes a plurality of memory cells, each of which includes the aforementioned insulated gate type transistor and an electrically breakable memory element provided on one of the major electrode regions.

摘要翻译： 绝缘栅型晶体管包括多个主电极区域，设置在多个主电极区域之间的沟道区域，设置在沟道区域上的栅极电极之间的栅极绝缘膜，以及设置成与沟道接触的半导体区域 区域，具有与沟道区相同的导电类型和比沟道区更高的杂质浓度的半导体区。 栅电极具有至少两个相对的部分。 多个主电极区域设置在基板绝缘膜上。 晶体管在半导体区域保持在预定电压的状态下被激活。 半导体器件包括多个存储单元，每个存储单元包括上述绝缘栅型晶体管和设置在其中一个主电极区上的电可破坏存储元件。

公开(公告)号：US5241167A

公开(公告)日：1993-08-31

申请号：US789045

申请日：1991-11-07

申请人： Kenji Suzuki ,  Mamoru Miyawaki ,  Akira Akashi ,  Toshiki Nakayama

发明人： Kenji Suzuki ,  Mamoru Miyawaki ,  Akira Akashi ,  Toshiki Nakayama

IPC分类号： G02B7/34 ,  H01L27/148 ,  H04N5/232

CPC分类号： H04N5/23212 ,  G02B7/346 ,  H01L27/148

摘要： A photoelectric sensor device has a two-dimensional arrangement of a multiplicity of unit structures each including a pixel. The sensor device includes a circuit for simultaneously designating a plurality of pixel blocks of any desired sizes at any desired positions on the two dimensional arrangement of unit structures, each pixel block being composed of pixels which are to be actually used. The sensor device also includes a monitor output circuit for outputting, for each of the pixel blocks, at least one monitor output as the representative of the amounts of charges accumulated in the pixels in each of the pixel blocks. The sensor device further includes a circuit which executes the control of accumulation of charges and the control of outputting of the image signals on each of the pixel blocks independently of other pixel blocks. Disclosed also is a focus detection system using the sensor device.

摘要翻译： 光电传感器装置具有各自包括像素的多个单位结构的二维排列。 传感器装置包括一个电路，用于在单元结构的二维排列上的任何期望位置同时指定任何所需尺寸的多个像素块，每个像素块由实际使用的像素构成。 传感器装置还包括监视器输出电路，用于为每个像素块输出至少一个监视器输出，作为在每个像素块中的像素中积累的电荷量的代表。 传感器装置还包括执行电荷累积控制的电路和独立于其它像素块的每个像素块上输出图像信号的控制。 还公开了使用该传感器装置的焦点检测系统。