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    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING SAME
    53.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING SAME 有权
    非易失性半导体存储器件及其驱动方法

    公开(公告)号：US20120069679A1

    公开(公告)日：2012-03-22

    申请号：US13239964

    申请日：2011-09-22

    申请人： Jun FUJIKI ,  Naoki Yasuda ,  Koichi Muraoka

    发明人： Jun FUJIKI ,  Naoki Yasuda ,  Koichi Muraoka

    IPC分类号： G11C16/06

    CPC分类号： G11C16/26 ,  G11C16/3454 ,  G11C16/3459

    摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a memory string including a plurality of memory cells and, a driving unit. In sequentially reading data stored in the memory cells by applying a first signal to the memory cells, a second signal is applied to a second cell. The driving unit applies a third signal to the gate electrodes of all the memory cells prior to the sequential reading. The third signal has a voltage smaller than the second signal and time duration equal to or more than that of a sum of time duration during which the first signal is applied to all the memory cells. In a period prior to the third signal application, the driving unit performs at least one of applying a fourth signal to the gate electrodes and matching a potential of the gate electrodes with that of the semiconductor layer.

    摘要翻译： 根据一个实施例，非易失性半导体存储器件包括包括多个存储单元的存储器串和驱动单元。 通过向存储单元施加第一信号来顺序读取存储在存储单元中的数据，第二信号被施加到第二单元。 驱动单元在顺序读取之前将所有存储单元的栅电极施加第三信号。 第三信号的电压小于第二信号，并且持续时间等于或大于将第一信号施加到所有存储器单元的持续时间之和的电平。 在第三信号施加之前的时段中，驱动单元执行将第四信号施加到栅电极并使栅电极的电位与半导体层的电位相匹配中的至少一个。

    Semiconductor device
    54.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07977787B2

    公开(公告)日：2011-07-12

    申请号：US12332409

    申请日：2008-12-11

    申请人： Kazuhiro Shimizu ,  Hajime Akiyama ,  Naoki Yasuda

    发明人： Kazuhiro Shimizu ,  Hajime Akiyama ,  Naoki Yasuda

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L21/67271 ,  H01L21/67282 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device manufacturing apparatus is provided with a drawing pattern printing part having a print head which injects a conductive solvent, an insulative solvent and an interface treatment solution. The print head is formed in such a way that desired circuit drawing pattern can be printed on a wafer based on information on the drawing pattern from a wafer testing part, information on the wafer from a storage part and coordinate information from a chip coordinate recognition part. In a semiconductor device manufacturing method according to the present invention, a semiconductor device is manufactured by using the semiconductor device manufacturing apparatus in such a manner that desired circuits are formed through printing process. In the semiconductor device, pad electrodes and so on are formed in such a way that trimming process can be conducted by printing circuit drawing patterns.

    摘要翻译： 半导体器件制造装置具备：具有喷射导电性溶剂的印刷头，绝缘性溶剂和界面处理液的图形印刷部。 打印头形成为使得可以基于来自晶片测试部件的绘图图案的信息，从存储部分获得关于晶片的信息和来自芯片坐标识别部分的坐标信息，将期望的电路图形图案印刷在晶片上 。 在根据本发明的半导体器件制造方法中，通过使用半导体器件制造设备以通过印刷处理形成期望的电路的方式制造半导体器件。 在半导体器件中，焊盘电极等以能够通过打印电路图形进行修整处理的方式形成。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME
    55.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME 失效
    非易失性半导体存储器件及其驱动方法

    公开(公告)号：US20100080065A1

    公开(公告)日：2010-04-01

    申请号：US12496064

    申请日：2009-07-01

    申请人： Jun FUJIKI ,  Koichi Muraoka ,  Naoki Yasuda

    发明人： Jun FUJIKI ,  Koichi Muraoka ,  Naoki Yasuda

    IPC分类号： G11C16/04 ,  H01L29/792

    CPC分类号： H01L29/7881 ,  G11C16/0466 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/792

    摘要： A nonvolatile semiconductor memory device includes a memory cell and a driving unit. The a memory cell has a semiconductor layer having, a channel, and a source region and a drain region provided on both sides of the channel; a first insulating film provided on the channel; a charge retention layer provided on the first insulating film; and a gate electrode provided on the charge retention layer. The driving unit applies a burst signal having a constant amplitude and a constant frequency between the gate electrode and the semiconductor layer and performs at least one of operations of programming and erasing charge on the charge retention layer.

    摘要翻译： 非易失性半导体存储器件包括存储单元和驱动单元。 存储单元具有半导体层，具有设置在沟道两侧的沟道以及源极区和漏极区; 设置在所述通道上的第一绝缘膜; 设置在所述第一绝缘膜上的电荷保持层; 以及设置在电荷保持层上的栅电极。 驱动单元在栅电极和半导体层之间施加具有恒定幅度和恒定频率的突发​​信号，并执行对电荷保持层进行编程和擦除电荷的操作中的至少一种。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
    56.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
    非易失性半导体存储器件

    公开(公告)号：US20100072535A1

    公开(公告)日：2010-03-25

    申请号：US12506588

    申请日：2009-07-21

    申请人： Akira Takashima ,  Masao Shingu ,  Naoki Yasuda ,  Koichi Muraoka

    发明人： Akira Takashima ,  Masao Shingu ,  Naoki Yasuda ,  Koichi Muraoka

    IPC分类号： H01L29/792

    CPC分类号： H01L29/513 ,  H01L27/11568 ,  H01L29/4234 ,  H01L29/792

    摘要： A nonvolatile semiconductor memory device includes a source region and a drain region provided apart from each other in a semiconductor substrate, a first insulating film provided on a channel region between the source region and the drain region, a charge storage layer provided on the first insulating film, a second insulating film provided on the charge storage layer and including a stacked structure of a lanthanum aluminum silicate film and a dielectric film made of silicon oxide or silicon oxynitride, and a control gate electrode provided on the second insulating film.

    摘要翻译： 非易失性半导体存储器件包括在半导体衬底中彼此分开设置的源极区域和漏极区域，设置在源极区域和漏极区域之间的沟道区域上的第一绝缘膜，设置在第一绝缘体上的电荷存储层 膜，设置在电荷存储层上并包括硅酸铝镧硅酸盐膜和由氧化硅或氮氧化硅制成的电介质膜的叠层结构的第二绝缘膜和设置在第二绝缘膜上的控制栅电极。

    Semiconductor device and method of fabricating the same
    57.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07671473B2

    公开(公告)日：2010-03-02

    申请号：US11452376

    申请日：2006-06-14

    申请人： Teruhiko Kumada ,  Hideharu Nobutoki ,  Naoki Yasuda ,  Kinya Goto ,  Masazumi Matsuura

    发明人： Teruhiko Kumada ,  Hideharu Nobutoki ,  Naoki Yasuda ,  Kinya Goto ,  Masazumi Matsuura

    IPC分类号： H01L23/48

    CPC分类号： H01L21/02271 ,  H01L21/314 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835

    摘要： There is provided a semiconductor device and method of fabricating the same that employs an insulation film of a borazine-based compound to provided enhanced contact between a material for insulation and that for interconnection, increased mechanical strength, and other improved characteristics. The semiconductor device includes a first insulation layer having a recess with a first conductor layer buried therein, an etching stopper layer formed on the first insulation layer, a second insulation layer formed on the etching stopper layer, a third insulation layer formed on the second insulation layer, and a second conductor layer buried in a recess of the second and third insulation layers. The second and third insulation layers are grown by chemical vapor deposition with a carbon-containing borazine compound used as a source material and the third insulation layer is smaller in carbon content than the second insulation layer.

    摘要翻译： 提供一种半导体器件及其制造方法，其采用环硼氮烷化合物的绝缘膜，以提供绝缘材料和互连材料，增加的机械强度和其它改进的特性之间的增强的接触。 半导体器件包括具有埋设有第一导体层的凹部的第一绝缘层，形成在第一绝缘层上的蚀刻阻挡层，形成在蚀刻停止层上的第二绝缘层，形成在第二绝缘层上的第三绝缘层 层，以及埋在第二绝缘层和第三绝缘层的凹部中的第二导体层。 第二绝缘层和第三绝缘层通过化学气相沉积生长，其中含有碳源的环硼氮烷化合物用作源材料，第三绝缘层的碳含量比第二绝缘层小。