公开(公告)号：US20090233418A1

公开(公告)日：2009-09-17

申请号：US12474720

申请日：2009-05-29

申请人： Anant Agarwal ,  Sei-Hyung Ryu ,  Matthew Donofrio

发明人： Anant Agarwal ,  Sei-Hyung Ryu ,  Matthew Donofrio

IPC分类号： H01L21/304

CPC分类号： H01L21/0485 ,  H01L21/0495 ,  H01L21/268 ,  H01L29/6606 ,  Y10S438/931

摘要： Methods of forming a silicon carbide semiconductor device are disclosed. The methods include forming a semiconductor device at a first surface of a silicon carbide substrate having a first thickness, and mounting a carrier substrate to the first surface of the silicon carbide substrate. The carrier substrate provides mechanical support to the silicon carbide substrate. The methods further include thinning the silicon carbide substrate to a thickness less the first thickness, forming a metal layer on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate, and locally annealing the metal layer to form an ohmic contact on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate. The silicon carbide substrate is singulated to provide a singulated semiconductor device.

摘要翻译： 公开了形成碳化硅半导体器件的方法。 所述方法包括在具有第一厚度的碳化硅衬底的第一表面上形成半导体器件，以及将载体衬底安装到碳化硅衬底的第一表面上。 载体衬底为碳化硅衬底提供机械支撑。 所述方法还包括将碳化硅衬底减薄至小于第一厚度的厚度，在与碳化硅衬底的第一表面相对的稀薄的碳化硅衬底上形成金属层，并局部退火金属层以在其上形成欧姆接触 薄碳化硅衬底与碳化硅衬底的第一表面相对。 将碳化硅衬底分离以提供单片半导体器件。

公开(公告)号：US07547578B2

公开(公告)日：2009-06-16

申请号：US11531975

申请日：2006-09-14

申请人： Anant Agarwal ,  Sei-Hyung Ryu ,  Matthew Donofrio

发明人： Anant Agarwal ,  Sei-Hyung Ryu ,  Matthew Donofrio

IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/44

CPC分类号： H01L21/0485 ,  H01L21/0495 ,  H01L21/268 ,  H01L29/6606 ,  Y10S438/931

摘要： Methods of forming a silicon carbide semiconductor device are disclosed. The methods include forming a semiconductor device at a first surface of a silicon carbide substrate having a first thickness, and mounting a carrier substrate to the first surface of the silicon carbide substrate. The carrier substrate provides mechanical support to the silicon carbide substrate. The methods further include thinning the silicon carbide substrate to a thickness less the first thickness, forming a metal layer on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate, and locally annealing the metal layer to form an ohmic contact on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate. The silicon carbide substrate is singulated to provide a singulated semiconductor device.

摘要翻译： 公开了形成碳化硅半导体器件的方法。 所述方法包括在具有第一厚度的碳化硅衬底的第一表面上形成半导体器件，以及将载体衬底安装到碳化硅衬底的第一表面上。 载体衬底为碳化硅衬底提供机械支撑。 所述方法还包括将碳化硅衬底减薄至小于第一厚度的厚度，在与碳化硅衬底的第一表面相对的稀薄的碳化硅衬底上形成金属层，并局部退火金属层以在其上形成欧姆接触 薄碳化硅衬底与碳化硅衬底的第一表面相对。 将碳化硅衬底分离以提供单片半导体器件。

公开(公告)号：US20080296771A1

公开(公告)日：2008-12-04

申请号：US11756020

申请日：2007-05-31

申请人： Mrinal Kanti Das ,  Qingchun Zhang ,  John M. Clayton, JR. ,  Matthew Donofrio

发明人： Mrinal Kanti Das ,  Qingchun Zhang ,  John M. Clayton, JR. ,  Matthew Donofrio

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L29/66068 ,  H01L21/0475 ,  H01L21/0485 ,  H01L21/268 ,  H01L23/4827 ,  H01L29/1095 ,  H01L29/7395 ,  H01L2224/04026 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/00

摘要： A silicon carbide power device is fabricated by forming a p-type silicon carbide epitaxial layer on an n-type silicon carbide substrate, and forming a silicon carbide power device structure on the p-type silicon carbide epitaxial layer. The n-type silicon carbide substrate is at least partially removed, so as to expose the p-type silicon carbide epitaxial layer. An ohmic contact is formed on at least some of the p-type silicon carbide epitaxial layer that is exposed. By at least partially removing the n-type silicon carbide substrate and forming an ohmic contact on the p-type silicon carbide epitaxial layer, the disadvantages of using a p-type substrate may be reduced or eliminated. Related structures are also described.

摘要翻译： 通过在n型碳化硅衬底上形成p型碳化硅外延层并在p型碳化硅外延层上形成碳化硅功率器件结构来制造碳化硅功率器件。 至少部分去除n型碳化硅衬底，以露出p型碳化硅外延层。 在露出的至少一些p型碳化硅外延层上形成欧姆接触。 通过至少部分去除n型碳化硅衬底并在p型碳化硅外延层上形成欧姆接触，可以减少或消除使用p型衬底的缺点。 还描述了相关结构。

公开(公告)号：US07419912B2

公开(公告)日：2008-09-02

申请号：US10815293

申请日：2004-04-01

申请人： Matthew Donofrio

发明人： Matthew Donofrio

IPC分类号： H01L21/311 ,  B29D11/00 ,  G03F1/00

CPC分类号： H01L33/20 ,  B23K26/066 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/52 ,  H01L33/0095 ,  H01L33/32 ,  Y10S438/94

摘要： Light extraction features are provided for a light emitting device having a substrate and a semiconductor light emitting element on the substrate by shaping a surface of a layer of semiconductor material utilizing a laser to define three dimensional patterns in the layer of semiconductor material. The layer of semiconductor material may be the substrate. In particular embodiments of the present invention, the surface of the layer of semiconductor material is shaped by applying laser light to the layer of semiconductor material at an energy sufficient to remove material from the layer of semiconductor material. The laser light may also by applied in a blanket manner at a level below the ablation threshold. The application of laser light to the layer of semiconductor material may be followed by etching the substrate. The layer of semiconductor material may be anisotropically etched. A mask could also be patterned utilizing laser light and the layer of semiconductor material etched using the mask. Light emitting devices have three dimensional patterns in a layer of semiconductor material of the device are also provided.

摘要翻译： 通过使用激光对半导体材料层的表面进行成形以在半导体材料层中形成三维图案，为具有衬底和半导体发光元件的发光器件提供光提取特征。 半导体材料层可以是衬底。 在本发明的特定实施例中，半导体材料层的表面通过以足以从半导体材料层去除材料的能量将激光施加到半导体材料层而成形。 也可以以低于消融阈值的水平以橡皮布方式施加激光。 将激光应用于半导体材料层之后可以蚀刻基板。 可以各向异性地蚀刻半导体材料层。 也可以使用激光对掩模进行图案化，并使用掩模蚀刻半导体材料层。 还提供了发光器件在器件的半导体材料层中具有三维图案。

公开(公告)号：US07384809B2

公开(公告)日：2008-06-10

申请号：US11461018

申请日：2006-07-31

申请人： Matthew Donofrio

发明人： Matthew Donofrio

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/20 ,  B23K26/066 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/52 ,  H01L33/0095 ,  H01L33/32 ,  Y10S438/94

摘要： A method is disclosed for obtaining a high-resolution lenticular pattern on the surface of a light emitting diode. The method comprises imprinting a patterned sacrificial layer of etchable material that is positioned on a semiconductor surface that is in turn adjacent a light emitting active region, and thereafter etching the imprinted sacrificial layer and the underlying semiconductor to transfer an imprinted pattern into the semiconductor layer adjacent the light emitting active region.

摘要翻译： 公开了一种用于在发光二极管的表面上获得高分辨率透镜图案的方法。 该方法包括将可蚀刻材料的图案化牺牲层压印在半导体表面上，该半导体表面又邻近发光有源区，然后蚀刻印刻的牺牲层和下面的半导体以将压印图案转移到邻近的半导体层 发光有源区。

公开(公告)号：US20050227379A1

公开(公告)日：2005-10-13

申请号：US10815293

申请日：2004-04-01

申请人： Matthew Donofrio

发明人： Matthew Donofrio

IPC分类号： B23K26/00 ,  B23K26/06 ,  B23K26/40 ,  H01L21/027 ,  H01L21/04 ,  H01L33/00 ,  H01L33/20 ,  H01L33/32 ,  H01L21/00 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L33/20 ,  B23K26/066 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/52 ,  H01L33/0095 ,  H01L33/32 ,  Y10S438/94

摘要： Light extraction features are provided for a light emitting device having a substrate and a semiconductor light emitting element on the substrate by shaping a surface of a layer of semiconductor material utilizing a laser to define three dimensional patterns in the layer of semiconductor material. The layer of semiconductor material may be the substrate. In particular embodiments of the present invention, the surface of the layer of semiconductor material is shaped by applying laser light to the layer of semiconductor material at an energy sufficient to remove material from the layer of semiconductor material. The laser light may also by applied in a blanket manner at a level below the ablation threshold. The application of laser light to the layer of semiconductor material may be followed by etching the substrate. The layer of semiconductor material may be anisotropically etched. A mask could also be patterned utilizing laser light and the layer of semiconductor material etched using the mask. Light emitting devices have three dimensional patterns in a layer of semiconductor material of the device are also provided.

摘要翻译： 通过使用激光对半导体材料层的表面进行成形以在半导体材料层中形成三维图案，为具有衬底和半导体发光元件的发光器件提供光提取特征。 半导体材料层可以是衬底。 在本发明的特定实施例中，半导体材料层的表面通过以足以从半导体材料层去除材料的能量将激光施加到半导体材料层而成形。 也可以以低于消融阈值的水平以橡皮布方式施加激光。 将激光应用于半导体材料层之后可以蚀刻基板。 可以各向异性地蚀刻半导体材料层。 也可以使用激光对掩模进行图案化，并使用掩模蚀刻半导体材料层。 还提供了发光器件在器件的半导体材料层中具有三维图案。

公开(公告)号：US20050151138A1

公开(公告)日：2005-07-14

申请号：US10987135

申请日：2004-11-12

申请人： David Slater ,  Matthew Donofrio

发明人： David Slater ,  Matthew Donofrio

IPC分类号： H01L21/78 ,  H01L33/00 ,  H01L33/20 ,  H01L21/00 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12

CPC分类号： H01L33/0095 ,  H01L21/78 ,  H01L33/20

摘要： Processing a semiconductor wafer can include forming a plurality of Light Emitting Devices (LED) on a semiconductor wafer having a first thickness. The plurality of LEDs on the wafer are brought into contact with a surface of a carrier to couple the wafer to the carrier. The first thickness of the wafer is reduced to a second thickness that is less than the first thickness by processing the backside of the wafer. The carrier is separated from the plurality of LEDs on the wafer and the wafer is cut to separate the plurality of LEDs from one another. Related devices are also disclosed.

摘要翻译： 处理半导体晶片可以包括在具有第一厚度的半导体晶片上形成多个发光器件（LED）。 使晶片上的多个LED与载体的表面接触以将晶片耦合到载体。 通过处理晶片的背面，将晶片的第一厚度减小到小于第一厚度的第二厚度。 载体与晶片上的多个LED分离，并且切割晶片以将多个LED彼此分离。 还公开了相关设备。

公开(公告)号：US09754926B2

公开(公告)日：2017-09-05

申请号：US13027006

申请日：2011-02-14

申请人： Matthew Donofrio ,  John Adam Edmond ,  Hua-Shuang Kong ,  Peter S. Andrews ,  David Todd Emerson

发明人： Matthew Donofrio ,  John Adam Edmond ,  Hua-Shuang Kong ,  Peter S. Andrews ,  David Todd Emerson

IPC分类号： H01L27/15 ,  H01L25/075 ,  H01L33/50 ,  H01L33/62

CPC分类号： H01L25/0753 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/16

摘要： An electronic device may include a packaging substrate having a packaging substrate face with a plurality of electrically conductive pads on the packaging substrate face. A first light emitting diode die may bridge first and second ones of the electrically conductive pads. More particularly, the first light emitting diode die may include first anode and cathode contacts respectively coupled to the first and second electrically conductive pads using metallic bonds. Moreover, widths of the metallic bonds between the first anode contact and the first pad and between the first cathode contact and the second pad may be at least 60 percent of a width of the first light emitting diode die. A second light emitting diode die may bridge third and fourth ones of the electrically conductive pads. The second light emitting diode die may include second anode and cathode contacts respectively coupled to the third and fourth electrically conductive pads using metallic bonds. Widths of the metallic bonds between the second anode contact and the second pad and between the second cathode contact and the third pad may be at least 60 percent of a width of the first light emitting diode die.

公开(公告)号：US09640737B2

公开(公告)日：2017-05-02

申请号：US13018013

申请日：2011-01-31

申请人： Matthew Donofrio ,  John Adam Edmond ,  James Ibbetson ,  David Todd Emerson ,  Michael John Bergmann ,  Kevin Haberern ,  Raymond Rosado ,  Jeffrey Carl Britt

发明人： Matthew Donofrio ,  John Adam Edmond ,  James Ibbetson ,  David Todd Emerson ,  Michael John Bergmann ,  Kevin Haberern ,  Raymond Rosado ,  Jeffrey Carl Britt

IPC分类号： H01L33/50 ,  H01L33/20

CPC分类号： H01L33/505 ,  H01L33/20 ,  H01L33/507

摘要： Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 μm is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount.

公开(公告)号：US09053958B2

公开(公告)日：2015-06-09

申请号：US13463267

申请日：2012-05-03

申请人： Matthew Donofrio ,  Christopher P. Hussell ,  John Adam Edmond

发明人： Matthew Donofrio ,  Christopher P. Hussell ,  John Adam Edmond

IPC分类号： H01L33/62 ,  H01L25/075 ,  H01L33/20 ,  H01L33/50 ,  H01L33/54

CPC分类号： H01L25/0753 ,  H01L33/20 ,  H01L33/505 ,  H01L33/54 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electronic device may include a packaging substrate having a packaging face and first and second pluralities of light emitting diodes electrically and mechanically coupled to the packaging face of the packaging substrate. The packaging substrate may include first and second electrically conductive pads on the packaging face. The light emitting diodes of the first plurality of light emitting diodes may be electrically coupled in parallel between the first electrically conductive pad and an interconnection structure on the packaging face. The light emitting diodes of the second plurality of light emitting diodes may be electrically coupled in parallel between the interconnection structure and the second electrically conductive pad.

摘要翻译： 电子设备可以包括具有封装面的封装基板，以及电气和机械耦合到封装基板的封装面的第一和第二多个发光二极管。 包装衬底可以包括在包装面上的第一和第二导电垫。 第一多个发光二极管的发光二极管可以并联在第一导电焊盘和封装面上的互连结构之间电耦合。 第二多个发光二极管的发光二极管可以在互连结构和第二导电焊盘之间并联电耦合。