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    Methods of Processing Semiconductor Wafers Having Silicon Carbide Power Devices Thereon
    2.
    发明申请
    Methods of Processing Semiconductor Wafers Having Silicon Carbide Power Devices Thereon 有权
    处理具有碳化硅功率器件的半导体晶片的方法

    公开(公告)号：US20090233418A1

    公开(公告)日：2009-09-17

    申请号：US12474720

    申请日：2009-05-29

    申请人： Anant Agarwal ,  Sei-Hyung Ryu ,  Matthew Donofrio

    发明人： Anant Agarwal ,  Sei-Hyung Ryu ,  Matthew Donofrio

    IPC分类号： H01L21/304

    CPC分类号： H01L21/0485 ,  H01L21/0495 ,  H01L21/268 ,  H01L29/6606 ,  Y10S438/931

    摘要： Methods of forming a silicon carbide semiconductor device are disclosed. The methods include forming a semiconductor device at a first surface of a silicon carbide substrate having a first thickness, and mounting a carrier substrate to the first surface of the silicon carbide substrate. The carrier substrate provides mechanical support to the silicon carbide substrate. The methods further include thinning the silicon carbide substrate to a thickness less the first thickness, forming a metal layer on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate, and locally annealing the metal layer to form an ohmic contact on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate. The silicon carbide substrate is singulated to provide a singulated semiconductor device.

    摘要翻译： 公开了形成碳化硅半导体器件的方法。 所述方法包括在具有第一厚度的碳化硅衬底的第一表面上形成半导体器件，以及将载体衬底安装到碳化硅衬底的第一表面上。 载体衬底为碳化硅衬底提供机械支撑。 所述方法还包括将碳化硅衬底减薄至小于第一厚度的厚度，在与碳化硅衬底的第一表面相对的稀薄的碳化硅衬底上形成金属层，并局部退火金属层以在其上形成欧姆接触 薄碳化硅衬底与碳化硅衬底的第一表面相对。 将碳化硅衬底分离以提供单片半导体器件。

    Methods of processing semiconductor wafers having silicon carbide power devices thereon
    3.
    发明授权
    Methods of processing semiconductor wafers having silicon carbide power devices thereon 有权
    处理其上具有碳化硅功率器件的半导体晶片的方法

    公开(公告)号：US07547578B2

    公开(公告)日：2009-06-16

    申请号：US11531975

    申请日：2006-09-14

    申请人： Anant Agarwal ,  Sei-Hyung Ryu ,  Matthew Donofrio

    发明人： Anant Agarwal ,  Sei-Hyung Ryu ,  Matthew Donofrio

    IPC分类号： H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/44

    CPC分类号： H01L21/0485 ,  H01L21/0495 ,  H01L21/268 ,  H01L29/6606 ,  Y10S438/931

    摘要： Methods of forming a silicon carbide semiconductor device are disclosed. The methods include forming a semiconductor device at a first surface of a silicon carbide substrate having a first thickness, and mounting a carrier substrate to the first surface of the silicon carbide substrate. The carrier substrate provides mechanical support to the silicon carbide substrate. The methods further include thinning the silicon carbide substrate to a thickness less the first thickness, forming a metal layer on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate, and locally annealing the metal layer to form an ohmic contact on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate. The silicon carbide substrate is singulated to provide a singulated semiconductor device.

    摘要翻译： 公开了形成碳化硅半导体器件的方法。 所述方法包括在具有第一厚度的碳化硅衬底的第一表面上形成半导体器件，以及将载体衬底安装到碳化硅衬底的第一表面上。 载体衬底为碳化硅衬底提供机械支撑。 所述方法还包括将碳化硅衬底减薄至小于第一厚度的厚度，在与碳化硅衬底的第一表面相对的稀薄的碳化硅衬底上形成金属层，并局部退火金属层以在其上形成欧姆接触 薄碳化硅衬底与碳化硅衬底的第一表面相对。 将碳化硅衬底分离以提供单片半导体器件。

    METHODS OF PROCESSING SEMICONDUCTOR WAFERS HAVING SILICON CARBIDE POWER DEVICES THEREON
    4.
    发明申请
    METHODS OF PROCESSING SEMICONDUCTOR WAFERS HAVING SILICON CARBIDE POWER DEVICES THEREON 有权
    加工具有硅碳膜电源器件的半导体晶体管的方法

    公开(公告)号：US20070066039A1

    公开(公告)日：2007-03-22

    申请号：US11531975

    申请日：2006-09-14

    申请人： Anant Agarwal ,  Sei-Hyung Ryu ,  Matthew Donofrio

    发明人： Anant Agarwal ,  Sei-Hyung Ryu ,  Matthew Donofrio

    IPC分类号： H01L21/425

    CPC分类号： H01L21/0485 ,  H01L21/0495 ,  H01L21/268 ,  H01L29/6606 ,  Y10S438/931

    摘要： Methods of forming a silicon carbide semiconductor device are disclosed. The methods include forming a semiconductor device at a first surface of a silicon carbide substrate having a first thickness, and mounting a carrier substrate to the first surface of the silicon carbide substrate. The carrier substrate provides mechanical support to the silicon carbide substrate. The methods further include thinning the silicon carbide substrate to a thickness less the first thickness, forming a metal layer on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate, and locally annealing the metal layer to form an ohmic contact on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate. The silicon carbide substrate is singulated to provide a singulated semiconductor device.

    摘要翻译： 公开了形成碳化硅半导体器件的方法。 所述方法包括在具有第一厚度的碳化硅衬底的第一表面上形成半导体器件，以及将载体衬底安装到碳化硅衬底的第一表面上。 载体衬底为碳化硅衬底提供机械支撑。 所述方法还包括将碳化硅衬底减薄至小于第一厚度的厚度，在与碳化硅衬底的第一表面相对的稀薄的碳化硅衬底上形成金属层，并局部退火金属层以在其上形成欧姆接触 薄碳化硅衬底与碳化硅衬底的第一表面相对。 将碳化硅衬底分离以提供单片半导体器件。

    Methods of forming light emitting devices having current reducing structures
    10.
    发明授权
    Methods of forming light emitting devices having current reducing structures 有权
    形成具有电流还原结构的发光器件的方法

    公开(公告)号：US08436368B2

    公开(公告)日：2013-05-07

    申请号：US13406251

    申请日：2012-02-27

    申请人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, Jr. ,  Matthew Donofrio ,  John Edmond

    发明人： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, Jr. ,  Matthew Donofrio ,  John Edmond

    IPC分类号： H01L27/15

    CPC分类号： H01L33/145 ,  H01L24/05 ,  H01L33/14 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

    摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.

    摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。