公开(公告)号：US08867261B2

公开(公告)日：2014-10-21

申请号：US13858141

申请日：2013-04-08

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Gurtej S. Sandhu

IPC: G11C11/24 ,  H01L21/28 ,  H01L27/06 ,  H01L29/792 ,  G11C13/00 ,  H01L49/02 ,  G11C11/56

CPC classification number: H01L29/7841 ,  G11C11/565 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2213/51 ,  G11C2213/53 ,  G11C2213/77 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/0629 ,  H01L28/40 ,  H01L29/792

Abstract: A memcapacitor device includes a pair of opposing conductive electrodes. A semiconductive material including mobile dopants within a dielectric and a mobile dopant barrier dielectric material are received between the pair of opposing conductive electrodes. The semiconductive material and the barrier dielectric material are of different composition relative one another which is at least characterized by at least one different atomic element. One of the semiconductive material and the barrier dielectric material is closer to one of the pair of electrodes than is the other of the semiconductive material and the barrier dielectric material. The other of the semiconductive material and the barrier dielectric material is closer to the other of the pair of electrodes than is the one of the semiconductive material and the barrier dielectric material. Other implementations are disclosed, including field effect transistors, memory arrays, and methods.

Abstract translation: 电容器装置包括一对相对的导电电极。 包括电介质中的移动掺杂剂和可移动掺杂剂阻挡介电材料的半导体材料被接收在该对相对的导电电极之间。 半导体材料和阻挡介电材料的组成彼此不同，其至少特征在于至少一种不同的原子元素。 半导体材料和阻挡介电材料之一比半导体材料和阻挡介电材料中的另一个更靠近一对电极之一。 半导体材料和阻挡介电材料中的另一个比半导电材料和阻挡介电材料中的一个更接近于该对电极中的另一个。 公开了其他实现方式，包括场效应晶体管，存储器阵列和方法。

公开(公告)号：US20140246671A1

公开(公告)日：2014-09-04

申请号：US14277134

申请日：2014-05-14

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Gurtej S. Sandhu

IPC: H01L29/78

CPC classification number: H01L29/7841 ,  G11C11/565 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2213/51 ,  G11C2213/53 ,  G11C2213/77 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/0629 ,  H01L28/40 ,  H01L29/792

Abstract: A memcapacitor device includes a pair of opposing conductive electrodes. A semiconductive material including mobile dopants within a dielectric and a mobile dopant barrier dielectric material are received between the pair of opposing conductive electrodes. The semiconductive material and the barrier dielectric material are of different composition relative one another which is at least characterized by at least one different atomic element. One of the semiconductive material and the barrier dielectric material is closer to one of the pair of electrodes than is the other of the semiconductive material and the barrier dielectric material. The other of the semiconductive material and the barrier dielectric material is closer to the other of the pair of electrodes than is the one of the semiconductive material and the barrier dielectric material. Other implementations are disclosed, including field effect transistors, memory arrays, and methods.

Abstract translation: 电容器装置包括一对相对的导电电极。 包括电介质中的移动掺杂剂和可移动掺杂剂阻挡介电材料的半导体材料被接收在该对相对的导电电极之间。 半导体材料和阻挡介电材料的组成彼此不同，其至少特征在于至少一种不同的原子元素。 半导体材料和阻挡介电材料之一比半导体材料和阻挡介电材料中的另一个更靠近一对电极之一。 半导体材料和阻挡介电材料中的另一个比半导体材料和阻挡介电材料中的一个更接近于该对电极中的另一个。 公开了其他实现方式，包括场效应晶体管，存储器阵列和方法。

公开(公告)号：US20140029225A1

公开(公告)日：2014-01-30

申请号：US14038472

申请日：2013-09-26

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Gurtej S. Sandhu

IPC: H05K7/04 ,  H05K3/36

CPC classification number: H05K1/0298 ,  B82Y99/00 ,  G11C8/08 ,  G11C8/10 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C19/0808 ,  H01L24/02 ,  H01L24/80 ,  H01L2224/04042 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01093 ,  H01L2924/014 ,  H01L2924/12042 ,  H05K1/112 ,  H05K1/113 ,  H05K1/144 ,  H05K3/3436 ,  H05K3/36 ,  H05K3/4697 ,  H05K7/04 ,  H05K2201/09381 ,  Y10S977/932 ,  Y10T29/49126 ,  Y10T29/49128 ,  H01L2924/00

Abstract: Electronic devices may include a first substrate bearing circuitry components at a nanoscale pitch within the first substrate. The first substrate may include microscale bond pads on a surface of the first substrate. A via may electrically connect one of the microscale bond pads to one of the circuitry components. A second substrate may be electrically connected to at least one of the microscale bond pads. Methods of forming electronic devices may include positioning a first substrate adjacent to a second substrate. The first substrate may bear circuitry components at a nanoscale pitch within the first substrate. The first substrate may include microscale bond pads on a surface of the first substrate. A via may electrically connect one of the microscale bond pads to one of the circuitry components. The second substrate may be electrically connected to at least one of the microscale bond pads.

Abstract translation: 电子器件可以包括第一衬底，其承载在第一衬底内的纳米级间距的电路组件。 第一衬底可以包括在第一衬底的表面上的微结构焊盘。 通孔可以将微型接合焊盘之一电连接到电路部件之一。 第二衬底可以电连接到至少一个微结构焊盘。 形成电子器件的方法可以包括将邻近第二衬底的第一衬底定位。 第一衬底可以承载第一衬底内的纳米级间距的电路组件。 第一衬底可以包括在第一衬底的表面上的微结构焊盘。 通孔可以将微型接合焊盘之一电连接到电路部件之一。 第二衬底可以电连接到至少一个微结构焊盘。

公开(公告)号：US20130154042A1

公开(公告)日：2013-06-20

申请号：US13766970

申请日：2013-02-14

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L31/02325 ,  G02B6/12004 ,  G02B6/1223 ,  H01L31/02327 ,  H01L31/105 ,  H01L31/1808

Abstract: Some embodiments include photonic systems. The systems may include a silicon-containing waveguide configured to direct light along a path, and a detector proximate the silicon-containing waveguide. The detector may comprise a detector material which has a lower region and an upper region, with the lower region having a higher concentration of defects than the upper region. The detector material may comprise germanium in some embodiments. Some embodiments include methods of forming photonic systems.

Abstract translation: 一些实施例包括光子系统。 该系统可以包括配置成沿着路径引导光的含硅波导和靠近含硅波导的检测器。 检测器可以包括具有较低区域和上部区域的检测器材料，其中下部区域具有比上部区域更高的缺陷浓度。 在一些实施例中，检测器材料可以包括锗。 一些实施例包括形成光子系统的方法。