公开(公告)号：US20200251579A1

公开(公告)日：2020-08-06

申请号：US16854262

申请日：2020-04-21

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Yasunari UMEMOTO ,  Masahiro SHIBATA ,  Shigeki KOYA ,  Masao KONDO ,  Takayuki TSUTSUI

IPC: H01L29/737 ,  H01L29/205 ,  H03F3/195 ,  H03F3/213 ,  H01L29/66 ,  H01L21/308 ,  H01L21/311 ,  H01L21/285 ,  H01L21/02 ,  H01L21/306 ,  H01L29/423 ,  H01L29/417 ,  H01L29/08 ,  H01L29/10 ,  H01L23/00 ,  H03F3/24 ,  H03F1/56 ,  H03F3/21

Abstract: A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

公开(公告)号：US20200091874A1

公开(公告)日：2020-03-19

申请号：US16569271

申请日：2019-09-12

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kenji SASAKI ,  Isao OBU ,  Takayuki TSUTSUI

IPC: H03F3/19 ,  H03F3/213 ,  H03F1/30

Abstract: In a radio frequency power amplifier, a semiconductor chip includes at least one first transistor amplifying a radio frequency signal, a first external-connection conductive member connected to the first transistor, a bias circuit including a second transistor that applies a bias voltage to the first transistor, and a second external-connection conductive member connected to the second transistor. The second external-connection conductive member at least partially overlaps with the second transistor when viewed in plan.

公开(公告)号：US20200027876A1

公开(公告)日：2020-01-23

申请号：US16440700

申请日：2019-06-13

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Shigeki KOYA ,  Yasunari UMEMOTO ,  Takayuki TSUTSUI

IPC: H01L27/082 ,  H01L21/8252 ,  H01L23/00 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L29/66 ,  H01L23/498

Abstract: A semiconductor device has a semiconductor substrate, and multiple first bipolar transistors on the first primary surface side of the semiconductor substrate. The first bipolar transistors have a first height between an emitter layer and an emitter electrode in the direction perpendicular to the first primary surface. The semiconductor device further has at least one second bipolar transistor on the first primary surface side of the semiconductor substrate. The second bipolar transistor have a second height, greater than the first height, between an emitter layer and an emitter electrode in the direction perpendicular to the first primary surface. Also, the semiconductor has a first bump stretching over the multiple first bipolar transistors and the at least one second bipolar transistor.

公开(公告)号：US20190115338A1

公开(公告)日：2019-04-18

申请号：US16219886

申请日：2018-12-13

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kenji SASAKI ,  Takayuki TSUTSUI ,  Isao OBU ,  Yasuhisa YAMAMOTO

IPC: H01L27/02 ,  H03F3/213 ,  H01L23/00 ,  H01L29/417 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H03F1/52 ,  H03F3/195

Abstract: An amplifier circuit including a semiconductor element is formed on a substrate. A protection circuit formed on the substrate includes a plurality of protection diodes that are connected in series with each other, and the protection circuit is connected to an output terminal of the amplifier circuit. A pad conductive layer at least partially includes a pad for connecting to a circuit outside the substrate. The pad conductive layer and the protection circuit at least partially overlap each other in plan view.

公开(公告)号：US20190006075A1

公开(公告)日：2019-01-03

申请号：US16026469

申请日：2018-07-03

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takeyuki OKABE ,  Eigo TANGE ,  Takayuki TSUTSUI

IPC: H01F17/00 ,  H03F3/19 ,  H03F3/21

CPC classification number: H01F17/0013 ,  H01F2017/002 ,  H01F2017/004 ,  H01F2017/0073 ,  H03F3/19 ,  H03F3/21 ,  H03F3/60 ,  H03F2200/301 ,  H03F2200/387 ,  H03F2200/451

Abstract: An inductor includes first and second wirings respectively formed in a substantially spiral shape on first and second surfaces of a multilayer substrate. The multilayer substrate includes plural dielectric layers stacked on each other in a predetermined direction. The multilayer substrate includes a first layer having the first surface, which is an end surface in the predetermined direction, and a second layer having the second surface within the multilayer substrate. The width of the second wiring is smaller than that of the first wiring. The first and second wirings are electrically connected in parallel with each other. The inductance of the first wiring and that of the second wiring are substantially equal to each other. When the first and second wirings are projected on the first surface in the predetermined direction, entirety of a projected image of the second wiring is contained within that of the first wiring.

公开(公告)号：US20180343022A1

公开(公告)日：2018-11-29

申请号：US16052774

申请日：2018-08-02

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takayuki TSUTSUI ,  Satoshi TANAKA ,  Hidenori OBIYA

IPC: H04B1/04 ,  H04B15/00 ,  H03F1/32 ,  H03F3/195 ,  H03F3/21 ,  H03F3/24 ,  H03F3/68 ,  H03F1/02 ,  H03F3/72

CPC classification number: H04B1/0475 ,  H03F1/0277 ,  H03F1/32 ,  H03F3/195 ,  H03F3/211 ,  H03F3/24 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/318 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/451 ,  H03F2203/7209 ,  H04B1/0458 ,  H04B15/00 ,  H04B2001/0408

Abstract: A power amplification module includes a first input terminal arranged to receive a first transmission signal in a first frequency band, a second input terminal arranged to receive a second transmission signal in a second frequency band higher than the first frequency band, a first amplification circuit that amplifies the first transmission signal, a second amplification circuit that amplifies the second transmission signal, a first filter circuit located between the first input terminal and the first amplification circuit, and a second filter circuit located between the second input terminal and the second amplification circuit. The first filter circuit is a low-pass filter that allows the first frequency band to pass therethrough and that attenuates a harmonic of the first transmission signal and the second transmission signal. The second filter circuit is a high-pass filter that allows the second frequency band to pass therethrough and that attenuates the first transmission signal.

公开(公告)号：US20180247926A1

公开(公告)日：2018-08-30

申请号：US15902815

申请日：2018-02-22

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kenji SASAKI ,  Takayuki TSUTSUI ,  Isao OBU ,  Yasuhisa YAMAMOTO

IPC: H01L27/02 ,  H03F3/213 ,  H01L23/00 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L27/0255 ,  H01L24/05 ,  H01L24/06 ,  H01L24/17 ,  H01L24/49 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/41708 ,  H01L29/42304 ,  H01L2224/48463 ,  H01L2924/00014 ,  H03F1/52 ,  H03F3/195 ,  H03F3/213 ,  H03F2200/444 ,  H01L2224/45099

Abstract: An amplifier circuit including a semiconductor element is formed on a substrate. A protection circuit formed on the substrate includes a plurality of protection diodes that are connected in series with each other, and the protection circuit is connected to an output terminal of the amplifier circuit. A pad conductive layer at least partially includes a pad for connecting to a circuit outside the substrate. The pad conductive layer and the protection circuit at least partially overlap each other in plan view.

公开(公告)号：US20180102801A1

公开(公告)日：2018-04-12

申请号：US15837499

申请日：2017-12-11

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takayuki TSUTSUI ,  Satoshi TANAKA ,  Hidenori OBIYA

IPC: H04B1/04

CPC classification number: H04B1/0475 ,  H03F1/0277 ,  H03F1/32 ,  H03F3/195 ,  H03F3/211 ,  H03F3/24 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/318 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/451 ,  H03F2203/7209 ,  H04B1/0458 ,  H04B15/00 ,  H04B2001/0408

Abstract: A power amplification module includes a first input terminal arranged to receive a first transmission signal in a first frequency band, a second input terminal arranged to receive a second transmission signal in a second frequency band higher than the first frequency band, a first amplification circuit that amplifies the first transmission signal, a second amplification circuit that amplifies the second transmission signal, a first filter circuit located between the first input terminal and the first amplification circuit, and a second filter circuit located between the second input terminal and the second amplification circuit. The first filter circuit is a low-pass filter that allows the first frequency band to pass therethrough and that attenuates a harmonic of the first transmission signal and the second transmission signal. The second filter circuit is a high-pass filter that allows the second frequency band to pass therethrough and that attenuates the first transmission signal.

公开(公告)号：US20170359038A1

公开(公告)日：2017-12-14

申请号：US15600993

申请日：2017-05-22

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Satoshi TANAKA ,  Kazuo WATANABE ,  Takayuki TSUTSUI ,  Masao KONDO ,  Satoshi ARAYASHIKI ,  Fumio HARIMA ,  Masatoshi HASE

IPC: H03F3/24 ,  H04L5/14 ,  H03F3/21 ,  H03F3/195 ,  H04L5/00 ,  H03F1/56 ,  H03F1/02 ,  H03F3/00 ,  H04W88/00

CPC classification number: H03F3/245 ,  H03F1/0205 ,  H03F1/0272 ,  H03F1/0277 ,  H03F1/22 ,  H03F1/565 ,  H03F3/005 ,  H03F3/195 ,  H03F3/21 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/408 ,  H03F2200/451 ,  H03F2200/555 ,  H04L5/0007 ,  H04L5/14 ,  H04W88/00

Abstract: A power amplifier circuit includes first and second transistors and a first voltage output circuit. A radio frequency signal is input into a base of the first transistor. The first voltage output circuit outputs a first voltage in accordance with a power supply voltage. The first voltage is supplied to a base or a gate of the second transistor. An emitter or a source of the second transistor is connected to a collector of the first transistor. A first amplified signal generated by amplifying the radio frequency signal is output from a collector or a drain of the second transistor.

公开(公告)号：US20170181108A1

公开(公告)日：2017-06-22

申请号：US15451490

申请日：2017-03-07

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Satoshi TANAKA ,  Takayuki TSUTSUI ,  Yusuke TANAKA ,  Hayato NAKAMURA ,  Kazuhito NAKAI

IPC: H04W52/52 ,  H04W72/04 ,  H04B7/26

CPC classification number: H04W52/52 ,  H03F1/0261 ,  H03F3/195 ,  H03F3/245 ,  H03F3/68 ,  H03F2200/111 ,  H04B7/265 ,  H04L5/14 ,  H04W72/042 ,  H04W88/06

Abstract: Provided is a communication unit that includes first and second power-amplification modules, which can be integrated. The first power-amplification module includes a first power-amplifier for a first frequency band in a first communication scheme, a second power-amplifier for a second frequency band in the first communication scheme, a third power-amplifier for a third frequency band in a second communication scheme, a fourth power-amplifier for a fourth frequency band in the second communication scheme, a first bias circuit that generates a first bias current to the first and second power-amplifiers, and a bias current circuit that converts the first bias current into a second bias current to the third and fourth power-amplifiers. The second power-amplification module includes a fifth power-amplifier for a fifth frequency band in the first communication scheme, and a second bias circuit that generates a third bias current to the fifth power-amplifier.