公开(公告)号：US09362006B2

公开(公告)日：2016-06-07

申请号：US14570773

申请日：2014-12-15

Applicant: RAMBUS INC.

Inventor： Yohan U. Frans ,  Wayne F. Ellis ,  Akash Bansal

IPC: G06F1/04 ,  G01R23/00 ,  G01R23/10 ,  G01D21/00 ,  G01R35/00 ,  G11C29/50 ,  G06F13/16 ,  G01R23/02 ,  G11C7/22 ,  G11C29/02 ,  H03L1/02 ,  G11C8/18 ,  G06F11/16 ,  G06F1/12 ,  G06F1/08 ,  G01R23/15 ,  G11C7/04

CPC classification number: G11C29/50012 ,  G01R23/02 ,  G01R23/15 ,  G01R35/005 ,  G06F1/08 ,  G06F1/12 ,  G06F11/1604 ,  G06F13/1689 ,  G11C7/04 ,  G11C7/22 ,  G11C7/222 ,  G11C7/225 ,  G11C8/18 ,  G11C29/023 ,  G11C29/028 ,  G11C2207/2254 ,  H03L1/02

Abstract: The disclosed embodiments relate to components of a memory system that support timing-drift calibration. In specific embodiments, this memory system contains a memory device (or multiple devices) which includes a clock distribution circuit and an oscillator circuit which can generate a frequency, wherein a change in the frequency is indicative of a timing drift of the clock distribution circuit. The memory device also includes a measurement circuit which is configured to measure the frequency of the oscillator circuit. Additionally, the memory system contains a memory controller which can transmit a request to the memory device to trigger the memory device to measure the frequency of the oscillator circuit. The memory controller is also configured to receive the measured frequency from the memory device and uses the measured frequency to determine the timing drift in the memory device.

Abstract translation: 所公开的实施例涉及支持定时漂移校准的存储器系统的组件。 在具体实施例中，该存储器系统包含存储器件（或多个器件），其包括可产生频率的时钟分配电路和振荡器电路，其中频率变化表示时钟分配电路的定时漂移。 存储装置还包括被配置为测量振荡器电路的频率的测量电路。 此外，存储器系统包含存储器控制器，该存储器控制器可向存储器件发送请求以触发存储器件以测量振荡器电路的频率。 存储器控制器还被配置为从存储器件接收测量的频率，并使用测量的频率来确定存储器件中的定时漂移。

公开(公告)号：US20150310903A1

公开(公告)日：2015-10-29

申请号：US14687739

申请日：2015-04-15

Applicant: Rambus Inc.

Inventor： Akash Bansal ,  Yohan U. Frans ,  Kishore V. Kasamsetty ,  Todd Bystrom ,  Simon Li ,  Arun Vaidyanath

IPC: G11C7/22

CPC classification number: G11C7/22 ,  G06F1/10 ,  G11C7/222 ,  G11C29/023 ,  G11C29/028 ,  G11C2207/2254

Abstract: The disclosed embodiments related to a clocked memory system which performs a calibration operation at a full-rate frequency to determine a full-rate calibration state that specifies a delay between a clock signal and a corresponding data signal in the clocked memory system. Next, the clocked memory system uses the full-rate calibration state to calculate a sub-rate calibration state, which is associated with a sub-rate frequency (e.g., 1/2, 1/4 or 1/8 of the full-rate frequency). The system then uses this sub-rate calibration state when the clocked memory system is operating at the sub-rate frequency. This calculation of the sub-rate state calibration states eliminates the need to perform an additional time-consuming calibration operation for each sub-rate.

Abstract translation: 所公开的实施例涉及一种时钟存储器系统，其以全速率频率执行校准操作，以确定指定时钟信号与时钟控制的存储器系统中的相应数据信号之间的延迟的全速率校准状态。 接下来，时钟存储器系统使用全速率校准状态来计算子速率校准状态，其与子速率频率（例如，全速率的1/2，1/4或1/8）相关联 频率）。 当时钟存储器系统以子速率频率工作时，系统然后使用该子速率校准状态。 子速率状态校准状态的这种计算消除了对每个子速率执行附加耗时的校准操作的需要。

公开(公告)号：US09117496B2

公开(公告)日：2015-08-25

申请号：US13753360

申请日：2013-01-29

Applicant: Rambus Inc.

Inventor： Ian Shaeffer ,  Lawrence Lai ,  Fan Ho ,  David A. Secker ,  Wayne S. Richardson ,  Akash Bansal ,  Brian S. Leibowitz ,  Kyung Suk Oh

IPC: G11C5/06 ,  G11C5/04 ,  G11C7/10 ,  H01L23/00 ,  H01L25/065

CPC classification number: G11C8/12 ,  G11C5/02 ,  G11C5/04 ,  G11C5/06 ,  G11C5/063 ,  G11C7/1012 ,  G11C7/1045 ,  G11C8/18 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48471 ,  H01L2224/49171 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00

Abstract: A memory device comprising a programmable command-and-address (CA) interface and/or a programmable data interface is described. In an operational mode, two or more CA interfaces may be active. In another operational mode, at least one, but not all, CA interfaces may be active. In an operational mode, all of the data interfaces may be active. In another operational mode, at least one, but not all, data interfaces may be active. The memory device can include circuitry to select: an operational mode; a sub-mode within an operational mode; one or more CA interfaces as the active CA interface(s); a main CA interface from multiple active CA interfaces; and/or one or more data interfaces as the active data interfaces. The circuitry may perform these selection(s) based on one or more bits in one or more registers and/or one or more signals received on one or more pins.

Abstract translation: 描述了包括可编程命令和地址（CA）接口和/或可编程数据接口的存储器件。 在操作模式下，两个或多个CA接口可能处于活动状态。 在另一操作模式中，至少一个但不是全部的CA接口可能是活动的。 在操作模式下，所有数据接口都可能处于活动状态。 在另一种操作模式中，至少一个但不是全部的数据接口可能是活动的。 存储器装置可以包括用于选择：操作模式的电路; 操作模式中的子模式; 一个或多个CA接口作为活动CA接口; 来自多个活动CA接口的主CA接口; 和/或一个或多个数据接口作为活动数据接口。 电路可以基于一个或多个寄存器中的一个或多个位和/或在一个或多个引脚上接收到的一个或多个信号来执行这些选择。

公开(公告)号：US20250054561A1

公开(公告)日：2025-02-13

申请号：US18809250

申请日：2024-08-19

Applicant: Rambus Inc.

Inventor： Yohan U. Frans ,  Wayne F. Ellis ,  Akash Bansal

IPC: G11C29/50 ,  G01R23/02 ,  G01R23/15 ,  G01R35/00 ,  G06F1/08 ,  G06F1/12 ,  G06F11/16 ,  G06F13/16 ,  G11C7/04 ,  G11C7/22 ,  G11C8/18 ,  G11C29/02 ,  H03L1/02

Abstract: The disclosed embodiments relate to components of a memory system that support timing-drift calibration. In specific embodiments, this memory system contains a memory device (or multiple devices) which includes a clock distribution circuit and an oscillator circuit which can generate a frequency, wherein a change in the frequency is indicative of a timing drift of the clock distribution circuit. The memory device also includes a measurement circuit which is configured to measure the frequency of the oscillator circuit.

公开(公告)号：US20240282354A1

公开(公告)日：2024-08-22

申请号：US18590221

申请日：2024-02-28

Applicant: Rambus Inc.

Inventor： Wayne F. Ellis ,  Wayne S. Richardson ,  Akash Bansal ,  Frederick A. Ware ,  Lawrence Lai ,  Kishore Ven Kasamsetty

IPC: G11C11/406 ,  G06F1/3234 ,  G11C7/02 ,  G11C7/20 ,  G11C11/4072 ,  G11C11/4074 ,  G11C29/02

CPC classification number: G11C11/40615 ,  G06F1/3234 ,  G11C7/02 ,  G11C7/20 ,  G11C11/4072 ,  G11C11/4074 ,  G11C29/022 ,  G11C29/028

Abstract: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.

公开(公告)号：US11948619B2

公开(公告)日：2024-04-02

申请号：US18181185

申请日：2023-03-09

Applicant: Rambus Inc.

Inventor： Wayne F. Ellis ,  Wayne S. Richardson ,  Akash Bansal ,  Frederick A. Ware ,  Lawrence Lai ,  Kishore Ven Kasamsetty

IPC: G11C7/00 ,  G06F1/3234 ,  G11C7/02 ,  G11C7/20 ,  G11C11/406 ,  G11C11/4072 ,  G11C11/4074 ,  G11C29/02

CPC classification number: G11C11/40615 ,  G06F1/3234 ,  G11C7/02 ,  G11C7/20 ,  G11C11/4072 ,  G11C11/4074 ,  G11C29/022 ,  G11C29/028

Abstract: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.

公开(公告)号：US20220254407A1

公开(公告)日：2022-08-11

申请号：US17568656

申请日：2022-01-04

Applicant: Rambus Inc.

Inventor： Wayne F. Ellis ,  Wayne S. Richardson ,  Akash Bansal ,  Frederick A. Ware ,  Lawrence Lai ,  Kishore Ven Kasamsetty

IPC: G11C11/406 ,  G11C7/02 ,  G11C7/20 ,  G11C11/4072 ,  G11C29/02 ,  G06F1/3234 ,  G11C11/4074

Abstract: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.

公开(公告)号：US20210174865A1

公开(公告)日：2021-06-10

申请号：US17103374

申请日：2020-11-24

Applicant: Rambus Inc.

Inventor： Wayne F. Ellis ,  Wayne S. Richardson ,  Akash Bansal ,  Frederick A. Ware ,  Lawrence Lai ,  Kishore Ven Kasamsetty

IPC: G11C11/406 ,  G11C11/4074 ,  G11C7/20 ,  G11C7/02 ,  G11C11/4072 ,  G11C29/02 ,  G06F1/3234

Abstract: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.

公开(公告)号：US20200349991A1

公开(公告)日：2020-11-05

申请号：US16853612

申请日：2020-04-20

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely K. Tsern ,  Brian S. Leibowitz ,  Wayne Frederick Ellis ,  Akash Bansal ,  John Welsford Brooks ,  Kishore Ven Kasamsetty

IPC: G11C8/18 ,  G11C29/02 ,  G06F13/16 ,  G11C7/10 ,  G11C5/02 ,  G06F13/42

Abstract: In a multirank memory system in which the clock distribution trees of each rank are permitted to drift over a wide range (e.g., low power memory systems), the fine-interleaving of commands between ranks is facilitated through the use of techniques that cause each addressed rank to properly sample commands intended for that rank, notwithstanding the drift. The ability to perform such “microthreading” provides for substantially enhanced memory capacity without sacrificing the performance of single rank systems. This disclosure provides methods, memory controllers, memory devices and system designs adapted to these ends.

公开(公告)号：US10672450B2

公开(公告)日：2020-06-02

申请号：US16139636

申请日：2018-09-24

Applicant: Rambus Inc.

Inventor： Wayne F. Ellis ,  Wayne S. Richardson ,  Akash Bansal ,  Frederick A. Ware ,  Lawrence Lai ,  Kishore Ven Kasamsetty

IPC: G11C8/00 ,  G11C11/406 ,  G11C7/02 ,  G11C7/20 ,  G11C11/4072 ,  G11C29/02 ,  G06F1/3234 ,  G11C11/4074

Abstract: In one embodiment, a memory device includes a memory core and input receivers to receive commands and data. The memory device also includes a register to store a value that indicates whether a subset of the input receivers are powered down in response to a control signal. A memory controller transmits commands and data to the memory device. The memory controller also transmits the value to indicate whether a subset of the input receivers of the memory device are powered down in response to the control signal. In addition, in response to a self-fresh command, the memory device defers entry into a self-refresh operation until receipt of the control signal that is received after receiving the self-refresh command.