公开(公告)号：US20090181540A1

公开(公告)日：2009-07-16

申请号：US12405327

申请日：2009-03-17

申请人： Hirotaka Shida ,  Masayuki Hattori

发明人： Hirotaka Shida ,  Masayuki Hattori

IPC分类号： H01L21/304

CPC分类号： C09G1/02 ,  H01L21/3212

摘要： A chemical mechanical polishing method, including: chemically and mechanically polishing a polishing target surface by continuously performing a first polishing step and a second polishing step having a polishing rate lower than a polishing rate of the first polishing step, a chemical mechanical polishing aqueous dispersion used in the first polishing step and the second polishing step being a mixture of an aqueous dispersion and an aqueous solution, and the polishing rate being changed between the first polishing step and the second polishing step by changing a mixing ratio of the aqueous dispersion and the aqueous solution.

摘要翻译： 一种化学机械抛光方法，包括：通过连续进行第一抛光步骤和抛光速率低于第一抛光步骤的抛光速率的抛光速率的化学机械抛光水分散体，使用化学机械抛光水分散体，化学和机械抛光抛光目标表面 在第一抛光步骤和第二抛光步骤是水分散体和水溶液的混合物，并且抛光速率在第一抛光步骤和第二抛光步骤之间通过改变水分散体和水性分散体的混合比而改变 解。

公开(公告)号：US07560384B2

公开(公告)日：2009-07-14

申请号：US11358224

申请日：2006-02-22

申请人： Hirotaka Shida ,  Masayuki Hattori

发明人： Hirotaka Shida ,  Masayuki Hattori

IPC分类号： H01L21/302

CPC分类号： C09G1/02 ,  H01L21/3212

摘要： A chemical mechanical polishing method, including: chemically and mechanically polishing a polishing target surface by continuously performing a first polishing step and a second polishing step having a polishing rate lower than a polishing rate of the first polishing step, a chemical mechanical polishing aqueous dispersion used in the first polishing step and the second polishing step being a mixture of an aqueous dispersion and an aqueous solution, and the polishing rate being changed between the first polishing step and the second polishing step by changing a mixing ratio of the aqueous dispersion and the aqueous solution.

摘要翻译： 一种化学机械抛光方法，包括：通过连续进行第一抛光步骤和抛光速率低于第一抛光步骤的抛光速率的抛光速率的化学机械抛光水分散体，使用化学机械抛光水分散体，化学和机械抛光抛光目标表面 在第一抛光步骤和第二抛光步骤是水分散体和水溶液的混合物，并且抛光速率在第一抛光步骤和第二抛光步骤之间通过改变水分散体和水性分散体的混合比而改变 解。

公开(公告)号：US20080075186A1

公开(公告)日：2008-03-27

申请号：US11900636

申请日：2007-09-11

申请人： Hidetoshi Kawauchi ,  Masayuki Hattori

发明人： Hidetoshi Kawauchi ,  Masayuki Hattori

IPC分类号： H04L27/28

CPC分类号： H04L25/0234 ,  H04L25/0216 ,  H04L25/022 ,  H04L25/0222 ,  H04L25/025 ,  H04L25/03159 ,  H04L27/2647 ,  H04L2025/03414

摘要： An OFDM receiver may include OFDM-signal receiving means for receiving an orthogonal frequency division multiplexing (OFDM) signal; channel-characteristic estimating means for estimating a channel characteristic using pilot signals in the OFDM signal received by the OFDM-signal receiving means; and transmission-distortion compensating means for applying, on the basis of the channel characteristic estimated by the channel-characteristic estimating means, processing for compensating for transmission distortion to the OFDM signal received by the OFDM-signal receiving means. The channel-characteristic estimating means may include plural kinds of time-direction-channel estimating means used for the estimation of a channel characteristic, and switching control means for switching these estimating means according to a state of a channel.

摘要翻译： OFDM接收机可以包括用于接收正交频分复用（OFDM）信号的OFDM信号接收装置; 信道特性估计装置，用于使用由OFDM信号接收装置接收的OFDM信号中的导频信号来估计信道特性; 以及发送失真补偿装置，用于根据由信道特性估计装置估计的信道特性，应用用于补偿由OFDM信号接收装置接收的OFDM信号的发送失真的处理。 信道特性估计装置可以包括用于估计信道特性的多种时间 - 方向信道估计装置，以及根据信道状态切换这些估计装置的切换控制装置。

公开(公告)号：US07196999B2

公开(公告)日：2007-03-27

申请号：US09814379

申请日：2001-03-21

申请人： Masayuki Hattori ,  Jun Murayama ,  Toshiyuki Miyauchi

发明人： Masayuki Hattori ,  Jun Murayama ,  Toshiyuki Miyauchi

IPC分类号： G11B5/09

CPC分类号： H03M13/6325 ,  G11B20/10009 ,  G11B20/1426 ,  G11B20/1866 ,  G11B2020/1434 ,  G11B2020/1446 ,  H03M5/14 ,  H03M13/27 ,  H03M13/2957 ,  H03M13/2972 ,  H03M13/45 ,  H03M13/6343

摘要： A method and apparatus for recording or reproducing data in which high performance encoding and a high efficiency decoding are realized to lower the decoding error rate. A magnetic recording and/or reproducing apparatus 50 includes, in a recording system, a modulation encoder 52 for modulation encoding input data in a predetermined fashion and an interleaver 53 for interleaving data supplied from the modulation encoder 52 to re-array the data sequence. The magnetic recording and/or reproducing apparatus 50 also includes, in a reproducing system, a first deinterleaver for interleaving the input data for re-arraying the data sequence so that the bit sequence of data re-arrayed by the interleaver 53 will be restored to its original bit sequence, a modulation SISO decoder for modulation decoding data supplied from the first deinterleaver and a second deinterleaver for interleaving data corresponding to a difference value between data output by the modulation SISO decoder and data output by the first deinterleaver to re-array the data sequence of the difference data.

摘要翻译： 用于记录或再现其中实现高性能编码和高效率解码以降低解码错误率的数据的方法和装置。 磁记录和/或再现装置50在记录系统中包括用于以预定方式对输入数据进行调制编码的调制编码器52和用于交织从调制编码器52提供的数据的交织器53以重新排列数据序列。 磁记录和/或再现装置50还包括在再现系统中的第一解交织器，用于交织用于重新排列数据序列的输入数据，使得由交织器53重新排列的数据的位序列将被恢复到 其原始比特序列，用于从第一去交织器提供的调制解码数据的调制SISO解码器和用于对应于由调制SISO解码器输出的数据与由第一解交织器输出的数据之间的差值相对应的数据的第二解交织器，用于重新排列 差异数据的数据序列。

公开(公告)号：US20070049180A1

公开(公告)日：2007-03-01

申请号：US11508893

申请日：2006-08-24

申请人： Hirotaka Shida ,  Akihiro Takemura ,  Masayuki Hattori ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Yoshikuni Tateyama ,  Hiroyuki Yano

发明人： Hirotaka Shida ,  Akihiro Takemura ,  Masayuki Hattori ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima ,  Susumu Yamamoto ,  Yoshikuni Tateyama ,  Hiroyuki Yano

IPC分类号： B24B7/30

CPC分类号： C09G1/02 ,  B24B37/044 ,  H01L21/3212 ,  H01L21/76835 ,  H01L21/7684

摘要： An aqueous dispersion for chemical mechanical polishing contains water, a polyvinylpyrrolidone having a weight-average molecular weight exceeding 200,000, an oxidant, a protective film-forming agent and abrasive grains, the protective film-forming agent containing a first metal compound-forming agent which forms a water-insoluble metal compound, and a second metal compound-forming agent which forms a water-soluble metal compound. The aqueous dispersion is capable of uniformly and stably polishing a metal film at low friction without causing defects in a metal film and an insulating film.

摘要翻译： 用于化学机械抛光的水性分散体含有水，重均分子量超过200,000的聚乙烯吡咯烷酮，氧化剂，保护性成膜剂和磨料颗粒，所述保护性成膜剂含有第一金属化合物形成剂，所述第一金属化合物形成剂 形成水不溶性金属化合物和形成水溶性金属化合物的第二金属化合物形成剂。 水分散体能够以低摩擦力均匀且稳定地抛光金属膜，而不会在金属膜和绝缘膜中产生缺陷。

公开(公告)号：US07163448B2

公开(公告)日：2007-01-16

申请号：US10833089

申请日：2004-04-28

申请人： Masayuki Hattori ,  Nobuo Kawahashi

发明人： Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： B24B1/00

CPC分类号： H01L21/31053 ,  H01L21/76229

摘要： A chemical/mechanical polishing method for polishing an object to be polished with an irregular surface, having a substrate with convexities and concavities, a stopper layer formed on the convexities of the substrate, and an embedded insulating layer formed to cover the concavities of the substrate and the stopper layer, wherein the method is characterized comprising a first polishing step of flattening the embedded insulating layer using a slurry (A) which can maintain the polishing speed at 500 Å/min or less and a second polishing step of further polishing the embedded insulating layer to cause the stopper layer on the convexities to be exposed using a slurry (B) which can maintain the polishing speed at 600 Å/min or more. The method is useful for flattening wafers during shallow trench isolation (STI) in manufacturing semiconductor devices.

摘要翻译： 一种用不规则表面抛光待抛光物体的化学/机械抛光方法，具有凸起和凹凸的基底，形成在基底的凸部上的阻挡层和形成为覆盖基底的凹部的嵌入绝缘层 和阻挡层，其特征在于，该方法的特征在于包括使用能够将抛光速度保持在500埃/分钟以下的浆料（A）来平坦化嵌入绝缘层的第一抛光步骤和进一步抛光嵌入的第二抛光步骤 使得能够使抛光速度保持在600 / min以上的浆料（B）使凸部上的阻挡层露出。 该方法在制造半导体器件中的浅沟槽隔离（STI）期间对于平坦化晶片是有用的。

公开(公告)号：US20060010781A1

公开(公告)日：2006-01-19

申请号：US11180619

申请日：2005-07-14

申请人： Norihiko Ikeda ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Norihiko Ikeda ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： B24D11/00 ,  B24D3/02

CPC分类号： H01L21/31053 ,  C09G1/02

摘要： A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle diameter of not less than 1.0 μm. A chemical mechanical polishing method comprises polishing an insulating film by the use of the chemical mechanical polishing aqueous dispersion. By the use of the chemical mechanical polishing aqueous dispersion, occurrence of polishing scratches can be suppressed without lowering a removal rate.

公开(公告)号：US20050176606A1

公开(公告)日：2005-08-11

申请号：US11052910

申请日：2005-02-09

申请人： Tomohisa Konno ,  Kiyonobu Kubota ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Tomohisa Konno ,  Kiyonobu Kubota ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： B08B1/04 ,  B08B3/08 ,  C11D3/37 ,  C11D11/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  C11D1/00

CPC分类号： H01L21/02074 ,  C11D3/3765 ,  C11D11/0047 ,  H01L21/3212

摘要： The cleaning composition which comprises organic polymer particles (A) having a crosslinked structure and a surfactant (B) and is used after chemical mechanical polishing. The cleaning method of a semiconductor substrate is a method for cleaning semiconductor substrate given after chemical mechanical polishing, by the use of the cleaning composition. The process for manufacturing a semiconductor device including a step of chemically and mechanically polishing a semiconductor substrate and a step of cleaning the semiconductor substrate obtained after the chemical mechanical polishing, by the cleaning method.

摘要翻译： 该清洁组合物包含具有交联结构的有机聚合物颗粒（A）和表面活性剂（B），并在化学机械抛光后使用。 半导体衬底的清洁方法是通过使用清洁组合物来清洁化学机械抛光后的半导体衬底的清洗方法。 通过清洗方法制造半导体器件的方法，该半导体器件包括化学和机械抛光半导体衬底的步骤以及在化学机械抛光之后获得的半导体衬底的清洁步骤。

公开(公告)号：US20050037693A1

公开(公告)日：2005-02-17

申请号：US10882362

申请日：2004-07-02

申请人： Kazuhito Uchikura ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Hiroyuki Yano ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima

发明人： Kazuhito Uchikura ,  Kazuo Nishimoto ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Hiroyuki Yano ,  Yukiteru Matsui ,  Gaku Minamihaba ,  Dai Fukushima ,  Nobuyuki Kurashima

IPC分类号： C09G1/02 ,  C09K3/14 ,  H01L21/02 ,  H01L21/321 ,  B24B1/00

CPC分类号： H01L21/02074 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/3212

摘要： A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.

公开(公告)号：US20050001199A1

公开(公告)日：2005-01-06

申请号：US10878052

申请日：2004-06-29

申请人： Masayuki Hattori ,  Nobuo Kawahashi

发明人： Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： A01N25/04 ,  A01N33/20 ,  A01N37/34 ,  B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  C09K13/00 ,  H01L21/304 ,  C09K5/00

CPC分类号： C09K3/1463 ,  C09G1/02

摘要： The aqueous dispersion comprising (A) abrasive grains, (B) at least one compound selected from the group consisting of 2-bromo-2-nitro-1,3-propanediol, 2-bromo-2-nitro-1,3-butanediol, 2,2-dibromo-2-nitroethanol, and 2,2-dibromo-3-nitrilopropionamide, and (C) an organic component other than the compounds of component (B is disclosed. The aqueous dispersion has no problem of rotting even if stored or used in a neutral pH region and produces an excellent polished surface with almost no dishing or scratches, when applied particularly to the STI process for manufacturing of semiconductor devices.

摘要翻译： 所述水性分散体包含（A）磨粒，（B）至少一种选自2-溴-2-硝基-1,3-丙二醇，2-溴-2-硝基-1,3-丁二醇 ，2,2-二溴-3-硝基丙酰胺和2,2-二溴-3-硝基丙酰胺，（C）除了组分（B）的化合物以外的有机成分，即使是水分散体也没有腐烂的问题 储存或使用在中性pH区域，并且当特别用于制造半导体器件的STI工艺时，产生几乎没有凹陷或划痕的优异的抛光表面。