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    PLASMA-SINGULATED, CONTAMINANT-REDUCED SEMICONDUCTOR DIE
    51.
    发明申请
    PLASMA-SINGULATED, CONTAMINANT-REDUCED SEMICONDUCTOR DIE 有权

    公开(公告)号：US20210118734A1

    公开(公告)日：2021-04-22

    申请号：US16948709

    申请日：2020-09-29

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： JeongPyo HONG ,  Mohd Akbar MD SUM ,  Gordon M. GRIVNA

    IPC: H01L21/78 ,  H01L23/00 ,  H01L21/3065 ,  H01L21/67

    Abstract: Described implementations include a contaminant-free plasma singulation process, in which residues of materials used during plasma singulation are fully removed from sidewalls of a resulting semiconductor die, without damaging the semiconductor die. From such a contaminant-free plasma singulation process, a semiconductor die may be manufactured. The semiconductor die may include a first plurality of sidewall recesses formed in a sidewall of a substrate of the semiconductor die between a first surface and a second surface of the substrate, each having at most a first depth, as well as a second plurality of sidewall recesses formed in the sidewall of the substrate and disposed between the first plurality of sidewall recesses and the second surface, each having at least a second depth that is greater than the first depth.

    SEMICONDUCTOR DEVICE AND METHOD OF FORMING BACKSIDE OPENINGS FOR AN ULTRA-THIN SEMICONDUCTOR DIE
    52.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FORMING BACKSIDE OPENINGS FOR AN ULTRA-THIN SEMICONDUCTOR DIE 审中-公开

    公开(公告)号：US20200321291A1

    公开(公告)日：2020-10-08

    申请号：US16907520

    申请日：2020-06-22

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Gordon M. GRIVNA

    IPC: H01L23/58 ,  H01L21/78 ,  H01L21/683

    Abstract: A semiconductor substrate contains a plurality of openings extending partially into a surface of the semiconductor substrate. A conductive layer is formed with a first portion of the conductive layer over a remaining portion of the surface of the semiconductor substrate between the openings and a second portion of the conductive layer in the openings. The remaining portion of the surface of the semiconductor substrate is removed to lift-off the first portion of the conductive layer while leaving the second portion of the conductive layer in the openings. The semiconductor substrate is singulated to separate the semiconductor die leaving the second portion of the conductive layer over a surface of the semiconductor die. Alternatively, a plurality of openings is formed over each semiconductor die. A conductive layer is formed over a remaining portion of the surface of the semiconductor substrate between the openings and into the openings.

    METHOD OF SINGULATING SEMICONDUCTOR WAFER HAVING A PLURALITY OF DIE AND A BACK LAYER DISPOSED ALONG A MAJOR SURFACE
    53.
    发明申请
    METHOD OF SINGULATING SEMICONDUCTOR WAFER HAVING A PLURALITY OF DIE AND A BACK LAYER DISPOSED ALONG A MAJOR SURFACE 审中-公开

    公开(公告)号：US20200118878A1

    公开(公告)日：2020-04-16

    申请号：US16715019

    申请日：2019-12-16

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Gordon M. GRIVNA

    IPC: H01L21/78 ,  H01L23/544 ,  H01L21/67 ,  B28D5/00 ,  H01L21/3065 ,  H01L21/477 ,  H01L21/683

    Abstract: A method for forming an electronic device includes providing a wafer having a plurality of die formed as part of the wafer and separated from each other by spaces. A layer of material is disposed atop a major surface of the wafer and the layer of material is placed adjacent to first carrier substrate comprising a first adhesive layer. The wafer is singulated through the spaces to form singulation lines. A second carrier substrate comprising a second adhesive layer is placed onto an opposite major surface of the wafer. The method includes moving a mechanical device adjacent to and in a direction generally parallel to one of the first carrier substrate or the second carrier substrate to separate the layer of material in the singulation lines. In one example, the second adhesive layer has an adhesive strength that is less than that of the first adhesive layer.

    SEMICONDUCTOR DEVICE AND METHOD FOR SUPPORTING ULTRA-THIN SEMICONDUCTOR DIE
    54.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR SUPPORTING ULTRA-THIN SEMICONDUCTOR DIE 审中-公开

    公开(公告)号：US20190035687A1

    公开(公告)日：2019-01-31

    申请号：US16144750

    申请日：2018-09-27

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Gordon M. GRIVNA ,  Stephen ST. GERMAIN

    IPC: H01L21/78 ,  H01L23/495 ,  H01L29/20 ,  H01L21/48 ,  H01L21/02

    Abstract: A first semiconductor substrate contains a first semiconductor material, such as silicon. A second semiconductor substrate containing a second semiconductor material, such as gallium nitride or aluminum gallium nitride, is formed on the first semiconductor substrate. The first semiconductor substrate and second semiconductor substrate are singulated to provide a semiconductor die including a portion of the second semiconductor material supported by a portion of the first semiconductor material. The semiconductor die is disposed over a die attach area of an interconnect structure. The interconnect structure has a conductive layer and optional active region. An underfill material is deposited between the semiconductor die and die attach area of the interconnect structure. The first semiconductor material is removed from the semiconductor die and the interconnect structure is singulated to separate the semiconductor die. The first semiconductor material can be removed post interconnect structure singulation.

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