公开(公告)号：US20160204270A1

公开(公告)日：2016-07-14

申请号：US15074287

申请日：2016-03-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Daisuke KAWAE

IPC: H01L29/786

CPC classification number: H01L29/41733 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0508 ,  H01L51/0512 ,  H01L51/0545 ,  H01L51/105

Abstract: A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.

Abstract translation: 下栅极薄膜晶体管中的源电极和漏电极之间可能发生的电场浓度被放宽并且抑制了开关特性的劣化的结构及其制造方法。 制造在源电极和漏电极上设置氧化物半导体层的底栅薄膜晶体管，与氧化物半导体层接触的源电极的侧表面的角度和角度;角度和角度; 与氧化物半导体层接触的漏电极的侧面的两个面积分别被设定为大于或等于20°且小于90°，​​使得从上边缘到下边缘的距离 每个电极的侧表面增加。

公开(公告)号：US20150340513A1

公开(公告)日：2015-11-26

申请号：US14816686

申请日：2015-08-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Tatsuya HONDA ,  Norihito SONE

IPC: H01L29/786 ,  H01L21/428 ,  H01L21/465 ,  H01L21/477 ,  H01L27/12 ,  H01L21/02

CPC classification number: H01L29/78696 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/428 ,  H01L21/465 ,  H01L21/477 ,  H01L27/1225 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

公开(公告)号：US20150091009A1

公开(公告)日：2015-04-02

申请号：US14567309

申请日：2014-12-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/78606

Abstract: To provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability and a manufacturing method of the semiconductor device with high mass productivity. The summary is that an inverted-staggered (bottom-gate) thin film transistor is included in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, a channel protective layer is provided in a region that overlaps a channel formation region of the semiconductor layer, and a buffer layer is provided between the semiconductor layer and source and drain electrodes. An ohmic contact is formed by intentionally providing the buffer layer having a higher carrier concentration than the semiconductor layer between the semiconductor layer and the source and drain electrodes.

Abstract translation: 提供一种包括具有优异的电特性和高可靠性的薄膜晶体管的半导体器件和具有高质量生产率的半导体器件的制造方法。 总而言之，包括使用含有In，Ga和Zn的氧化物半导体膜作为半导体层的反交错（底栅极）薄膜晶体管，沟道保护层设置在与 沟道形成区域，并且在半导体层和源极和漏极之间设置有缓冲层。 通过有意地提供具有比半导体层和源极和漏极之间的半导体层更高的载流子浓度的缓冲层来形成欧姆接触。

公开(公告)号：US20150060850A1

公开(公告)日：2015-03-05

申请号：US14487360

申请日：2014-09-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

IPC: H01L29/786 ,  H01L29/51 ,  H01L29/49 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/016 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/15 ,  H01L27/3225 ,  H01L27/3241 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78618

Abstract: In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film.

Abstract translation: 在有源矩阵显示装置中，包括在电路中的薄膜晶体管的电特性是重要的，显示装置的性能取决于电特性。 因此，通过使用包括In，Ga和Zn的氧化物半导体膜用于反向交错薄膜晶体管，可以减小薄膜晶体管的电特性的变化。 通过溅射法连续地形成三层栅极绝缘膜，氧化物半导体层和沟道保护层，而不暴露于空气。 此外，在氧化物半导体层中，与沟道保护膜重叠的区域的厚度大于与导电膜接触的区域的厚度。

公开(公告)号：US20140252348A1

公开(公告)日：2014-09-11

申请号：US14282305

申请日：2014-05-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki KUWABARA ,  Kengo AKIMOTO ,  Toshinari SASAKI

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/24 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78696

Abstract: An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized.

Abstract translation: 目的是增加包括氧化物半导体的薄膜晶体管的场效应迁移率。 另一个目的是稳定薄膜晶体管的电特性。 在包括氧化物半导体层的薄膜晶体管中，在氧化物半导体层上形成具有比氧化物半导体更高的导电性的半导体层或导电层，由此可以提高薄膜晶体管的场效应迁移率。 此外，通过在氧化物半导体层和薄膜晶体管的保护绝缘层之间形成具有比氧化物半导体更高的导电性的半导体层或导电层，防止氧化物半导体层的组成变化或膜质量的劣化 ，使得薄膜晶体管的电特性能够稳定。

公开(公告)号：US20130214273A1

公开(公告)日：2013-08-22

申请号：US13832479

申请日：2013-03-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

IPC: H01L29/04

CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.

Abstract translation: 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

公开(公告)号：US20130175525A1

公开(公告)日：2013-07-11

申请号：US13780138

申请日：2013-02-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

IPC: H01L33/00

CPC classification number: G02F1/136204 ,  H01L27/0248 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

公开(公告)号：US20130089950A1

公开(公告)日：2013-04-11

申请号：US13688598

申请日：2012-11-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Toshinari SASAKI

IPC: H01L29/66

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G02F1/167 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.

公开(公告)号：US20130087785A1

公开(公告)日：2013-04-11

申请号：US13688596

申请日：2012-11-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Toshinari SASAKI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  G02F1/167 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.

Abstract translation: 目的是提高使用氧化物半导体的薄膜晶体管的场效应迁移率。 另一个目的是抑制即使在具有改善的场效应迁移率的薄膜晶体管中，关断电流的增加。 在使用氧化物半导体层的薄膜晶体管中，通过形成具有比氧化物半导体层和栅极绝缘层之间的氧化物半导体层更高的导电性和更小的厚度的半导体层，薄膜晶体管的场效应迁移率可以是 可以抑制切断电流的提高。

公开(公告)号：US20130082255A1

公开(公告)日：2013-04-04

申请号：US13680345

申请日：2012-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Toshinari SASAKI ,  Hideaki KUWABARA

IPC: H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.

Abstract translation: 在使用氧化物半导体作为有源层的薄膜晶体管中，为了防止用作有源层的氧化物半导体区域的组成，膜质量，界面等的变化，并且为了稳定化 薄膜晶体管的电气特性。 在其中使用第一氧化物半导体区域作为有源层的薄膜晶体管中，在第一氧化物半导体区域和用于薄的第一氧化物半导体区域的保护绝缘层之间形成具有比第一氧化物半导体区域低导电性的第二氧化物半导体区域 由此第二氧化物半导体区域用作第一氧化物半导体区域的保护层; 因此，可以防止第一氧化物半导体区域的组成变化或膜质量的劣化，并且能够稳定薄膜晶体管的电特性。