公开(公告)号：US3968978A

公开(公告)日：1976-07-13

申请号：US210033

申请日：1971-12-20

申请人： Yoshihiro Hayashi

发明人： Yoshihiro Hayashi

IPC分类号： B60R22/06 ,  B60R21/02

CPC分类号： B60R22/06

摘要： An automatic safety belt apparatus for restraining the occupant sitting on the seat of a motor vehicle, which comprises a plurality of elements which operatively cooperate so that, when the door of a vehicle is closed from an open position, the safety belt automatically position itself around both the hip and the shoulders of the occupant in a restraining manner. Upon releasing the belt member or opening the vehicle door, the safety belt apparatus operates in an opposite manner permitting the occupant to leave the vehicle unobstructed.

摘要翻译： 一种用于限制坐在机动车辆座椅上的乘员的自动安全带装置，其包括多个可操作地配合的元件，使得当车辆的门从打开位置关闭时，安全带自动定位在其周围 无论是臀部还是肩膀上的乘客都受到限制。 在释放带构件或打开车门时，安全带装置以相反的方式操作，从而允许乘客不受阻碍地离开车辆。

公开(公告)号：US08916466B2

公开(公告)日：2014-12-23

申请号：US13067960

申请日：2011-07-11

申请人： Mari Amano ,  Munehiro Tada ,  Naoya Furutake ,  Yoshihiro Hayashi

发明人： Mari Amano ,  Munehiro Tada ,  Naoya Furutake ,  Yoshihiro Hayashi

IPC分类号： H01L23/485 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L23/5226 ,  H01L21/76877 ,  H01L23/528 ,  H01L23/53233 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate, an insulating film formed above the semiconductor substrate, and a multilayered wiring formed in a prescribed area within the insulating film. The multilayered wiring includes a dual damascene wiring positioned on at least one layer of the multilayered wiring. The dual damascene wiring includes an alloy having copper as a principal component. A concentration of at least one metallic element contained as an added component of the alloy in a via connected to the dual damascene wiring is 10% or more higher in a via connected to a wiring whose width exceeds by five or more times a diameter of the via than that in another via connected to another wiring of a smallest width in a same upper wiring layer of the multilayered wiring.

摘要翻译： 半导体器件包括半导体衬底，形成在半导体衬底上的绝缘膜，以及形成在绝缘膜内的规定区域中的多层布线。 多层布线包括位于多层布线的至少一层上的双镶嵌布线。 双镶嵌线包括以铜为主要成分的合金。 在连接到双镶嵌布线的通孔中作为合金的添加成分含有的至少一种金属元素的浓度在连接到宽度超过五倍或更多倍的布线的通孔中为10％以上 通过连接到多层布线的同一上布线层中的最小宽度的另一布线的通孔。

公开(公告)号：US08592303B2

公开(公告)日：2013-11-26

申请号：US12715088

申请日：2010-03-01

申请人： Munehiro Tada ,  Yoshihiro Hayashi ,  Yoshimichi Harada ,  Fuminori Ito ,  Hiroto Ohtake ,  Tatsuya Usami

发明人： Munehiro Tada ,  Yoshihiro Hayashi ,  Yoshimichi Harada ,  Fuminori Ito ,  Hiroto Ohtake ,  Tatsuya Usami

IPC分类号： H01L21/4763

CPC分类号： H01L23/53295 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： There are provided with a wiring structure and a method for manufacturing the same wherein in a wiring structure of multi-layered wiring in which a metal wiring is formed on a substrate forming a semiconductor element thereby obtaining connection of the element, no damage to insulation property between the abutting wirings by occurrence of leakage current and no deterioration of insulation resistance property between the abutting wirings are achieved in case that fine metal wiring is formed in a porous insulation film. The insulation barrier layer 413 is formed between an interlayer insulation film and the metal wiring, in the metal wiring structure on the substrate forming the semiconductor element. The insulation barrier layer enables to reduce leakage current between the abutting wirings and to elevate the insulation credibility.

摘要翻译： 提供一种布线结构及其制造方法，其中在形成半导体元件的基板上形成金属布线的多层布线的布线结构中，从而获得元件的连接，不会损坏绝缘性能 在多孔绝缘膜中形成细小的金属布线的情况下，可以通过发生漏电流而在邻接布线之间形成邻接布线之间的绝缘电阻特性。 在形成半导体元件的基板上的金属布线结构中，在层间绝缘膜和金属布线之间形成绝缘阻挡层413。 绝缘阻挡层能够减少邻接布线之间的泄漏电流并提高绝缘可靠性。

公开(公告)号：US08558334B2

公开(公告)日：2013-10-15

申请号：US13399475

申请日：2012-02-17

申请人： Makoto Ueki ,  Naoya Inoue ,  Yoshihiro Hayashi

发明人： Makoto Ueki ,  Naoya Inoue ,  Yoshihiro Hayashi

IPC分类号： H01L29/82 ,  H01L23/552 ,  H01L27/08 ,  H01L21/00

CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08

摘要： A semiconductor device in which MRAM is formed in a wiring layer A contained in a multilayered wiring layer, the MRAM having at least two first magnetization pinning layers in contact with a first wiring formed in a wiring layer and insulated from each other, a free magnetization layer overlapping the two first magnetization pinning layers in a plan view, and connected with the first magnetization pinning layers, a non-magnetic layer situated over the free magnetization layer, and a second magnetization pinning layer situated over the non-magnetic layer.

摘要翻译： 一种半导体器件，其中MRAM形成在包含在多层布线层中的布线层A中，所述MRAM具有与形成在布线层中并彼此绝缘的第一布线接触的至少两个第一磁化闭塞层，自由磁化 层在平面图中与两个第一磁化钉扎层重叠，并与第一磁化钉扎层，位于自由磁化层上方的非磁性层和位于非磁性层上的第二磁化钉扎层连接。

公开(公告)号：US08492266B2

公开(公告)日：2013-07-23

申请号：US13302348

申请日：2011-11-22

申请人： Makoto Ueki ,  Takahiro Onodera ,  Yoshihiro Hayashi

发明人： Makoto Ueki ,  Takahiro Onodera ,  Yoshihiro Hayashi

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L23/5329 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor device, which includes an interlayer insulating film formed on a semiconductor substrate, a wiring layer filled in a recess formed in the interlayer insulating film, and a cap insulating film. The interlayer insulating film includes a first SiOCH film and a surface modification layer including an SiOCH film formed by modifying a surface layer of the first SiOCH film, the SiOCH film having a lower carbon concentration and a higher oxygen concentration than the first SiOCH film has. The cap insulating film contacts with surfaces of the metal wiring and the surface modification layer.

摘要翻译： 提供了一种半导体器件，其包括形成在半导体衬底上的层间绝缘膜，填充在形成于层间绝缘膜中的凹部中的布线层和帽绝缘膜。 层间绝缘膜包括第一SiOCH膜和包括通过改性第一SiOCH膜的表面层形成的SiOCH膜的表面改性层，具有比第一SiOCH膜具有更低的碳浓度和更高的氧浓度的SiOCH膜具有。 盖绝缘膜与金属布线和表面改性层的表面接触。

公开(公告)号：US08426322B2

公开(公告)日：2013-04-23

申请号：US13029866

申请日：2011-02-17

申请人： Hironori Yamamoto ,  Jun Kawahara ,  Tomonori Sakaguchi ,  Yoshihiro Hayashi

发明人： Hironori Yamamoto ,  Jun Kawahara ,  Tomonori Sakaguchi ,  Yoshihiro Hayashi

IPC分类号： H01L21/312

CPC分类号： H01L21/02274 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/76807 ,  H01L21/7682 ,  H01L2221/1047

摘要： In a method for producing a semiconductor device, two or more kinds of organic siloxane compound materials each having a cyclic SiO structure as a main skeleton and having different structures are mixed and thereafter vaporized. Alternatively, those two or more kinds of organic siloxane compound materials are mixed and vaporized simultaneously to produce a vaporized gas. Then, the vaporized gas is transported to a reaction furnace together with a carrier gas. Then, in the reaction furnace, a porous insulating layer is formed by the plasma CVD method or the plasma polymerization method using the vaporized gas.

摘要翻译： 在半导体装置的制造方法中，将具有环状SiO结构作为主骨架且具有不同结构的两种以上的有机硅氧烷化合物混合，然后蒸发。 或者，将这两种或更多种有机硅氧烷化合物材料同时混合并蒸发以产生汽化气体。 然后，蒸发的气体与载气一起输送到反应炉。 然后，在反应炉中，通过等离子体CVD法或使用汽化气体的等离子体聚合法形成多孔绝缘层。

公开(公告)号：US08378341B2

公开(公告)日：2013-02-19

申请号：US12654205

申请日：2009-12-14

申请人： Yoshihiro Hayashi ,  Naoya Inoue ,  Kishou Kaneko

发明人： Yoshihiro Hayashi ,  Naoya Inoue ,  Kishou Kaneko

IPC分类号： H01L29/18 ,  H01L21/00

CPC分类号： H01L21/76807 ,  H01L21/28282 ,  H01L21/76877 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/242 ,  H01L29/41 ,  H01L29/42344 ,  H01L29/42352 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/518 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/792

摘要： A semiconductor device of the present invention has a first interconnect layer formed over the semiconductor substrate, and a semiconductor element; the first interconnect layer has an insulating layer, and a first interconnect filled in a surficial portion of the insulating layer; the semiconductor element has a semiconductor layer, a gate insulating film, and a gate electrode; the semiconductor layer is positioned over the first interconnect layer; the gate insulating film is positioned over or below semiconductor layer; and the gate electrode is positioned on the opposite side of the semiconductor layer while placing the gate insulating film in between.

摘要翻译： 本发明的半导体器件具有形成在半导体衬底上的第一互连层和半导体元件; 所述第一互连层具有绝缘层，以及填充在所述绝缘层的表面部分中的第一互连层; 半导体元件具有半导体层，栅极绝缘膜和栅电极; 半导体层位于第一互连层上方; 栅绝缘膜位于半导体层之上或之下; 并且栅极电极位于半导体层的相反侧，同时将栅极绝缘膜放置在其间。

公开(公告)号：US08288498B2

公开(公告)日：2012-10-16

申请号：US12594032

申请日：2008-03-26

申请人： Yoshihiro Hayashi ,  Satoshi Abe

发明人： Yoshihiro Hayashi ,  Satoshi Abe

IPC分类号： C08G77/04

CPC分类号： C08G77/16 ,  C08G77/38 ,  C08G77/46

摘要： A sugar-alcohol-modified organopolysiloxane compound represented by formula (1) and processes for producing the compound. (In the formula, R1 represents a hydrocarbon group having 1-8 carbon atoms; X is a group represented by formula (2); Y represents —R4O(AO)nR5 (wherein AO is an oxyalkylene group having 2-4 carbon atoms, R4 is a divalent hydrocarbon group having 3-5 carbon atoms, R5 is any of a hydrogen atom, a hydrocarbon group having 1-24 carbon atoms, and an acyl group having 2-24 carbon atoms, and n is 1-100); R2 is any of R1, X, and Y; and a is 0-700, b is 0-100, and c is 0-50; provided that when b is 0, at least one of the R2s is X.) (In the formula, R3 is a divalent hydrocarbon group having 3-5 carbon atoms; and d is 1-2.)

摘要翻译： 由式（1）表示的糖醇改性的有机聚硅氧烷化合物及其制备方法。 （式中，R 1表示碳原子数为1〜8的烃基，X表示由式（2）表示的基团，Y表示-R4O（AO）nR5（其中，AO为2-4个碳原子的氧化烯基， R4是具有3-5个碳原子的二价烃基，R5是氢原子，具有1-24个碳原子的烃基和具有2-24个碳原子的酰基，n是1-100）。 R2是R1，X和Y中的任一个; a是0-700，b是0-100，c是0-50;条件是当b是0时，R2中的至少一个是X.）（In 式中，R 3为碳原子数为3〜5的二价烃基，d为1-2。

公开(公告)号：US08080878B2

公开(公告)日：2011-12-20

申请号：US12557677

申请日：2009-09-11

申请人： Makoto Ueki ,  Takahiro Onodera ,  Yoshihiro Hayashi

发明人： Makoto Ueki ,  Takahiro Onodera ,  Yoshihiro Hayashi

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L23/5329 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor device, which includes an interlayer insulating film formed on a semiconductor substrate, a wiring layer filled in a recess formed in the interlayer insulating film, and a cap insulating film. The interlayer insulating film includes a first SiOCH film and a surface modification layer including an SiOCH film formed by modifying a surface layer of the first SiOCH film, the SiOCH film having a lower carbon concentration and a higher oxygen concentration than the first SiOCH film has. The cap insulating film contacts with surfaces of the metal wiring and the surface modification layer.

摘要翻译： 提供了一种半导体器件，其包括形成在半导体衬底上的层间绝缘膜，填充在形成于层间绝缘膜中的凹部中的布线层和帽绝缘膜。 层间绝缘膜包括第一SiOCH膜和包括通过改性第一SiOCH膜的表面层形成的SiOCH膜的表面改性层，具有比第一SiOCH膜具有更低的碳浓度和更高的氧浓度的SiOCH膜具有。 盖绝缘膜与金属布线和表面改性层的表面接触。

公开(公告)号：US08031536B2

公开(公告)日：2011-10-04

申请号：US12748497

申请日：2010-03-29

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G11C7/10

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2003/0694 ,  G06F2212/2022 ,  G11C16/102 ,  G11C16/349

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

摘要翻译： 采用其中以块为单位重写数据的闪存的半导体盘作为存储介质，该半导体盘包括存储有文件数据的数据存储器，代替数据存储器中的错误块的替换存储器， 存储有数据存储器的错误信息的错误存储器，以及从数据存储器，替代存储器和错误存储器读取数据并将数据写入数据存储器，替代存储器和错误存储器的数据的存储器控​​制器。 由于可以补救闪速存储器的写入错误，所以可以提高半导体盘的使用寿命。