公开(公告)号：US10553730B2

公开(公告)日：2020-02-04

申请号：US15603796

申请日：2017-05-24

申请人： Samsung Electronics Co., Ltd.

发明人： Kiyoung Lee ,  Jinseong Heo ,  Jaeho Lee ,  Haeryong Kim ,  Seongjun Park ,  Hyeonjin Shin ,  Eunkyu Lee ,  Sanghyun Jo

IPC分类号： H01L31/0216 ,  G01N21/59 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/18

摘要： A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.

公开(公告)号：US10553684B2

公开(公告)日：2020-02-04

申请号：US15825344

申请日：2017-11-29

申请人： Samsung Electronics Co., Ltd.

发明人： Jaeho Lee ,  Hyeonjin Shin ,  Dongwook Lee ,  Seongjun Park ,  Kiyoung Lee ,  Eunkyu Lee ,  Sanghyun Jo ,  Jinseong Heo

IPC分类号： H01L31/0352 ,  H01L29/16 ,  H01L31/028 ,  H01L31/09 ,  H01L31/101 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L29/12 ,  H01L51/00 ,  H01L51/05 ,  H01L27/30

摘要： Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US20200035602A1

公开(公告)日：2020-01-30

申请号：US16238208

申请日：2019-01-02

申请人： Samsung Electronics Co., Ltd.

发明人： Seunggeol Nam ,  Hyeonjin Shin ,  Keunwook Shin ,  Changhyun Kim ,  Kyung-Eun Byun ,  Hyunjae Song ,  Eunkyu Lee ,  Changseok Lee ,  Alum Jung ,  Yeonchoo Cho

IPC分类号： H01L23/532 ,  H01L23/528 ,  H01L23/522

摘要： An interconnect structure and an electronic device including the interconnect structure are disclosed. The interconnect structure may include a metal interconnect having a bottom surface and two opposite side surfaces surrounded by a dielectric layer, a graphene layer on the metal interconnect, and a metal bonding layer providing interface adhesion between the metal interconnect and the graphene layer. The metal bonding layer includes a metal material.

公开(公告)号：US10539868B2

公开(公告)日：2020-01-21

申请号：US15807106

申请日：2017-11-08

申请人： Samsung Electronics Co., Ltd.

发明人： Hyeonjin Shin ,  Hyunjae Song ,  Seongjun Park ,  Keunwook Shin ,  Changseok Lee

IPC分类号： G03F1/64 ,  G03F1/22 ,  G03F7/20

摘要： A pellicle for a photomask, a reticle including the same, and an exposure apparatus for lithography are provided. The pellicle may include a pellicle membrane, and the pellicle membrane may include nanocrystalline graphene. The nanocrystalline graphene may have defects. The nanocrystalline graphene may include a plurality of nanoscale crystal grains, and the nanoscale crystal grains may include a two-dimensional (2D) carbon structure having an aromatic ring structure. The defects of the nanocrystalline graphene may include at least one of an sp3 carbon atom, an oxygen atom, a nitrogen atom, or a carbon vacancy.

公开(公告)号：US10522583B2

公开(公告)日：2019-12-31

申请号：US15897439

申请日：2018-02-15

申请人： Samsung Electronics Co., Ltd.

发明人： Haeryong Kim ,  Jaeho Lee ,  Sanghyun Jo ,  Hyeonjin Shin

IPC分类号： H01L33/00 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/109 ,  H01L27/00 ,  G01J5/20

摘要： A photoelectric conversion element and an optical sensor including the same are disclosed. The photoelectric conversion element may include a plurality of lattice stacks repeatedly stacked on top of each other on a substrate and configured to have an effective band gap. The plurality of lattice stacks may each include a first active layer and a second active layer on the first active layer. The first active layer may include a first two-dimensional material having a first band gap. The second active layer may include a second two-dimensional material having a second band gap not overlapping the first band gap. An effective band gap may be adjusted based on the first two-dimensional materials and thicknesses of the first active layer and the second active layer and a number of times of plurality of lattice stacks.

公开(公告)号：US10424490B2

公开(公告)日：2019-09-24

申请号：US15805848

申请日：2017-11-07

申请人： Samsung Electronics Co., Ltd.

发明人： Sangwon Kim ,  Minsu Seol ,  Hyeonjin Shin ,  Dongwook Lee ,  Seongjun Jeong

IPC分类号： H01L21/308 ,  C09D1/00 ,  C08K3/04 ,  C08K9/04 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  C09D7/62 ,  C09D7/40 ,  C01B32/15 ,  C01B32/152 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  C01B32/184 ,  C01B32/156 ,  G03F7/09

摘要： Provided are a hardmask composition and a method of forming a fine pattern using the hardmask composition, the hardmask composition including a solvent, a 2D carbon nanostructure (and/or a derivative thereof), and a 0D carbon nanostructure (and/or a derivative thereof).

公开(公告)号：US10372277B2

公开(公告)日：2019-08-06

申请号：US15403491

申请日：2017-01-11

申请人： Samsung Electronics Co., Ltd.

发明人： Kyung-Eun Byun ,  Jae-Young Kim ,  Hyeonjin Shin ,  Alum Jung

IPC分类号： G06F3/044 ,  G02F1/01 ,  G02F1/167 ,  H02N1/04 ,  G06F3/041

摘要： Example embodiments relate to a triboelectric device including first and second electrodes that are spaced apart from each other, a charging layer provided on the first electrode, a display layer, which is provided between the first and second electrodes, configured to implement an image according to a change in an electric field between the first and second electrodes, and a charging member charged with an opposite polarity to the polarity of the charging layer by contacting the charging layer, wherein the triboelectric device is configured to implement the image according to the change in the electric field between the first and second electrodes in a contact area of the charging member and the charging layer.

公开(公告)号：US20190157211A1

公开(公告)日：2019-05-23

申请号：US16257171

申请日：2019-01-25

申请人： Samsung Electronics Co., Ltd.

发明人： Hyunjae SONG ,  Seunggeol Nam ,  Yeonchoo Cho ,  Seongjun Park ,  Hyeonjin Shin ,  Jaeho Lee

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L23/53209 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/5226

摘要： Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.

公开(公告)号：US10217819B2

公开(公告)日：2019-02-26

申请号：US15010807

申请日：2016-01-29

申请人： Samsung Electronics Co., Ltd.

发明人： Minhyun Lee ,  Haeryong Kim ,  Hyeonjin Shin ,  Seunggeol Nam ,  Seongjun Park

IPC分类号： H01L29/04 ,  H01L29/78 ,  H01L29/08 ,  H01L21/285 ,  H01L29/45 ,  H01L29/06 ,  H01L29/267 ,  H01L29/417 ,  H01L29/12 ,  H01L29/26 ,  H01L29/165 ,  H01L29/16

摘要： A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.

公开(公告)号：US10199958B2

公开(公告)日：2019-02-05

申请号：US15049726

申请日：2016-02-22

申请人： Samsung Electronics Co., Ltd.

发明人： Hyeonjin Shin ,  Kyungeun Byun ,  Minsu Seol ,  Seongjun Park

IPC分类号： H02N1/04 ,  H02N1/00

摘要： A triboelectric generator includes first and second electrodes facing each other, and a first energy generation layer provided on the first electrode and generating electric energy through contact with other material, the first energy generation layer comprising a two-dimensional (2D) material having a crystal structure of a 2D shape.