公开(公告)号：US20250159946A1

公开(公告)日：2025-05-15

申请号：US18811194

申请日：2024-08-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Baekwon PARK ,  Keunwook SHIN ,  Changhyun KIM ,  Minsu SEOL ,  Joungeun YOO ,  Hyunmi LEE

IPC: H01L29/76 ,  H01L21/02 ,  H01L21/443 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device may include a gate electrode, a metal nitride layer on the gate electrode, a gate insulating film on the metal nitride layer, a channel on the gate insulating film, a source electrode in one side of the channel, and a drain electrode in another side of the channel.

公开(公告)号：US20250142907A1

公开(公告)日：2025-05-01

申请号：US18643087

申请日：2024-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun KIM ,  Kyung-Eun BYUN ,  Minsu SEOL ,  Junyoung KWON ,  Huije RYU ,  Eunkyu LEE ,  Yeonchoo CHO

IPC: H01L29/10 ,  H01L29/06

Abstract: A semiconductor device may include a substrate, a vertical channel, a gate electrode, and a conductive layer. The vertical channel may have a tube shape extending in a direction perpendicular to a surface of the substrate. The gate electrode may face the vertical channel with an outer insulating layer therebetween on an outer circumferential surface of the vertical channel. The conductive layer may face the vertical channel with an inner insulating layer therebetween on an inner circumferential surface of the vertical channel.

公开(公告)号：US20250142896A1

公开(公告)日：2025-05-01

申请号：US18820588

申请日：2024-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun BYUN ,  Baekwon PARK ,  Minsu SEOL ,  Sungil PARK ,  Jaehyun PARK ,  Min seok YOO

IPC: H01L29/76 ,  H01L21/02 ,  H01L29/06 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes a metal nitride layer, a channel provided in the metal nitride layer and including a two-dimensional (2D) semiconductor material, a source electrode provided on one side of the channel, a drain electrode provided on another side of the channel, a gate insulating layer provided in the channel, and a gate electrode provided on the gate insulating layer.

公开(公告)号：US20250120130A1

公开(公告)日：2025-04-10

申请号：US18823988

申请日：2024-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Changhyun KIM ,  Kyung-Eun BYUN ,  Eunkyu LEE

IPC: H01L29/76 ,  H01L21/02 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a source electrode provided on a substrate, a drain electrode disposed away from the source electrode, and a channel connected between the source electrode and the drain electrode, wherein the channel includes a plurality of first channel layers and plurality of second channel layers, and the gate electrode is provided on one surface and another surface of each of the plurality of the first channel layers and on one surface and another surface of each of the plurality of the second channel layers.

公开(公告)号：US20230343846A1

公开(公告)日：2023-10-26

申请号：US18151775

申请日：2023-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Eunkyu LEE ,  Changseok LEE ,  Changhyun KIM ,  Kyung-Eun BYUN

IPC: H01L29/45

CPC classification number: H01L29/45

Abstract: A semiconductor device may include a first semiconductor layer including a first semiconductor material; a metal layer facing the first semiconductor layer and having conductivity; a 2D material layer between the first semiconductor layer and the metal layer; and a second semiconductor layer between the first semiconductor layer and the 2D material layer. The second semiconductor layer may include a second semiconductor material different from the first semiconductor material. The second semiconductor layer and the 2D material layer may be in direct contact with each other. The second semiconductor material may include germanium.

公开(公告)号：US20230275128A1

公开(公告)日：2023-08-31

申请号：US18154978

申请日：2023-01-16

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Junyoung KWON ,  Sangwoo KIM ,  Kyung-Eun BYUN ,  Minsu SEOL ,  Minseok SHIN ,  Pin ZHAO ,  Taehyeong KIM ,  Jaehwan JUNG

IPC: H01L29/18 ,  H01L29/66

CPC classification number: H01L29/18 ,  H01L29/66969

Abstract: A semiconductor device including a two-dimensional material and a method of manufacturing the same are provided. The semiconductor device may include a first two-dimensional material layer including a first two-dimensional semiconductor material; a plurality of second two-dimensional material layers connected to the first two-dimensional material layer, each having a thickness greater than that of the first two-dimensional material layer, and including a doped two-dimensional semiconductor material; and a plurality of electrodes on the plurality of second two-dimensional material layers.

公开(公告)号：US20230207312A1

公开(公告)日：2023-06-29

申请号：US18179565

申请日：2023-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunkyu LEE ,  Kyung-Eun BYUN ,  Hyunjae SONG ,  Hyeonjin SHIN ,  Changhyun KIM ,  Keunwook SHIN ,  Changseok LEE ,  Alum JUNG

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/165

CPC classification number: H01L21/02447 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/165 ,  H01L21/02499 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02381

Abstract: Provided are a graphene structure and a method of forming the graphene structure. The graphene structure includes a substrate and graphene on a surface of the substrate. Here, a bonding region in which a material of the substrate and carbon of the graphene are covalently bonded is formed between the surface of the substrate and the graphene.

公开(公告)号：US20230197837A1

公开(公告)日：2023-06-22

申请号：US18066659

申请日：2022-12-15

Applicant: Samsung Electronics Co., Ltd. ,  UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)

Inventor： Minsu SEOL ,  Hyeonsuk SHIN ,  Kyung-Eun BYUN ,  Hyuntae HWANG ,  Changseok LEE ,  Hyeongjoon KIM

IPC: H01L29/76 ,  H01L21/02 ,  H01L29/16 ,  H01L29/20 ,  H01L29/24 ,  H01L29/267

CPC classification number: H01L29/7606 ,  H01L21/02521 ,  H01L21/02527 ,  H01L21/0254 ,  H01L21/02568 ,  H01L21/0262 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/267

Abstract: Provided are a complex of heterogeneous two-dimensional materials and a method of manufacturing the same. The complex of heterogeneous two-dimensional materials may include a substrate; a first two-dimensional material layer on the substrate and having a two-dimensional crystal structure; and a second two-dimensional material layer between the substrate and the first two-dimensional material layer. The second two-dimensional material layer have a two-dimensional crystal structure in which a plurality of phosphorus atoms are covalently bonded to each other.

公开(公告)号：US20230070355A1

公开(公告)日：2023-03-09

申请号：US17670912

申请日：2022-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Changhyun KIM ,  Kyung-Eun BYUN

IPC: H01L29/49 ,  H01L29/40 ,  H01L21/28

Abstract: Disclosed are a layer structure including a metal layer and a carbon layer, a manufacturing method the layer structure, an electronic device including the layer structure, and an electronic apparatus including the electronic device. The layer structure according to an embodiment includes an insulating layer on one surface of a semiconductor layer, a first metal layer facing the semiconductor layer with the insulating layer therebetween, a conductive first carbon layer arranged between the insulating layer and the first metal layer, the conductive first carbon layer being in contact with a first surface of the first metal layer. The first metal layer may be provided above or below the semiconductor layer. The first carbon layer may include a graphene layer. The first carbon layer may extend to another surface of the first metal layer.

公开(公告)号：US20220415825A1

公开(公告)日：2022-12-29

申请号：US17549026

申请日：2021-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Junghoo SHIN ,  Kyung-Eun BYUN ,  Hyeonjin SHIN

IPC: H01L23/00 ,  H01L23/528 ,  H01L23/532

Abstract: Provided are an interconnect structure and an electronic device including the same. The interconnect structure may include a conductive wiring having a certain pattern, a dielectric layer on side surfaces of the conductive wiring, a capping layer on the conductive wiring, and a graphene layer on the dielectric layer. The graphene layer may include a graphene material. A ratio of carbons having sp3 bonds to carbons having sp2 bonds in the graphene material is 1 or less.