公开(公告)号：US6013940A

公开(公告)日：2000-01-11

申请号：US516627

申请日：1995-08-18

申请人： Hirofumi Harada ,  Jun Osanai ,  Yoshikazu Kojima ,  Yutaka Saitoh

发明人： Hirofumi Harada ,  Jun Osanai ,  Yoshikazu Kojima ,  Yutaka Saitoh

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L27/06 ,  H01L27/08 ,  H01L29/00

CPC分类号： H01L28/20 ,  H01L27/0629 ,  H01L27/0802

摘要： A resistor ladder network may be formed with a reduced space on a semiconductor substrate by patterning a plurality of layers of resistive polycrystalline silicon films spaced by insulating layers. Such a device includes a first insulating film formed on a semiconductor substrate, one or more serial-connected first resistors formed in a first polycrystalline silicon film provided on the semiconductor substrate via the first insulating film, a second insulating film provided on the first polycrystalline silicon film, one or more series-connected second resistors formed in a second polycrystalline silicon film provided apart from the first polycrystalline silicon film via the second insulating film, the second polycrystalline silicon film being connected to the first polycrystalline silicon film. A third insulating film is provided over the second polycrystalline silicon film, and metal wires provided on a surface of the second polycrystalline silicon film via contact holes formed in the third insulating film. Preferably, the first polycrystalline silicon film is thicker than the second polycrystalline silicon film, the impurity concentration of the first polycrystalline silicon film is lower than the impurity concentration of the second polycrystalline silicon film, and the grain size of the first polycrystalline silicon film is smaller than that of the second polycrystalline silicon film.

摘要翻译： 可以通过对由绝缘层隔开的多层电阻多晶硅膜进行构图而在半导体衬底上形成具有减小的空间的电阻梯形网络。 这种器件包括形成在半导体衬底上的第一绝缘膜，经由第一绝缘膜形成在设置在半导体衬底上的第一多晶硅膜中的一个或多个串联连接的第一电阻器，设置在第一多晶硅上的第二绝缘膜 膜，一个或多个串联连接的第二电阻器，形成在通过第二绝缘膜与第一多晶硅膜分开设置的第二多晶硅膜中，第二多晶硅膜连接到第一多晶硅膜。 在第二多晶硅膜上设置第三绝缘膜，通过形成在第三绝缘膜中的接触孔，设置在第二多晶硅膜的表面上的金属线。 优选地，第一多晶硅膜比第二多晶硅膜厚，第一多晶硅膜的杂质浓度低于第二多晶硅膜的杂质浓度，第一多晶硅膜的晶粒尺寸较小 比第二多晶硅膜的厚度大。

公开(公告)号：US5982150A

公开(公告)日：1999-11-09

申请号：US196697

申请日：1998-11-20

申请人： Minoru Sudo ,  Takayuki Takashina ,  Yoshikazu Kojima ,  Sadashi Shimoda ,  Hiroshi Mukainakano

发明人： Minoru Sudo ,  Takayuki Takashina ,  Yoshikazu Kojima ,  Sadashi Shimoda ,  Hiroshi Mukainakano

IPC分类号： G01R31/36 ,  H01M10/44 ,  H02H7/18 ,  H02J7/00 ,  H02J7/02 ,  H02J7/10 ,  H02J7/14 ,  H01M10/46

CPC分类号： H02J7/1438 ,  H02J7/0011 ,  H02J7/0018 ,  H02J7/0026 ,  H02J7/0031 ,  H02J7/0034 ,  H02J7/0063 ,  H02J7/008 ,  H02J7/0086 ,  H02J2007/004

摘要： A charge/discharge control circuit is provided for an electric power source apparatus in which a service life is prolonged. A voltage dividing circuit, an overcharge voltage detection circuit, an overdischarge voltage detection circuit and a control circuit are connected in parallel to a secondary cell which is an electric power source, wherein the control circuit detects a condition of the secondary cell from the overcharge/overdischarge voltage detection circuits and outputs a signal Vs for controlling a power supply to an external equipment and a charge by an external power source and controls a switching element provided in series with the voltage dividing circuit and reduces a current which flows through the voltage dividing circuit.

公开(公告)号：US5926699A

公开(公告)日：1999-07-20

申请号：US89465

申请日：1998-06-02

申请人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

发明人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

IPC分类号： G02F1/136 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/86 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/1368 ,  H01L21/84 ,  H01L21/86 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/66772 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78654 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  Y10S148/012 ,  Y10S148/15 ,  Y10S438/977

摘要： A method of fabricating a semiconductor device comprises the steps of sequentially forming a first gate electrode and an insulating film over a transparent support substrate, forming a through-hole in the insulating film, forming a semiconductor single crystal silicon thin film over the transparent support substrate by epitaxial growth in the through-hole of the insulating film, forming a transistor element having a channel region formed in the semiconductor single crystal silicon thin film, and forming a second gate electrode over and electrically insulated from the channel region of the transistor element.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在透明支撑衬底上依次形成第一栅电极和绝缘膜，在绝缘膜中形成通孔，在透明支撑衬底上形成半导体单晶硅薄膜 通过在绝缘膜的通孔中进行外延生长，形成具有在半导体单晶硅薄膜中形成的沟道区的晶体管元件，并且在晶体管元件的沟道区上形成第二栅电极并将其电绝缘。

公开(公告)号：US5712496A

公开(公告)日：1998-01-27

申请号：US2400

申请日：1993-01-13

申请人： Hiroshi Takahashi ,  Yoshikazu Kojima

发明人： Hiroshi Takahashi ,  Yoshikazu Kojima

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L29/08

CPC分类号： H01L29/6675 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/78675 ,  H01L29/78678

摘要： A thin film field effect transistor has a three-layer structure including a polycrystalline semiconductor layer to be a channel region, a conductive layer to be a gate electrode and a insulating layer to be a gate insulating film between the channel region and the gate electrode. The roughness of an interface between the channel region and the gate insulating film is less than a few nm so that the current drivability of the transistor is improved.

摘要翻译： 薄膜场效应晶体管具有包括作为沟道区的多晶半导体层，作为栅电极的导电层和作为沟道区和栅电极之间的栅极绝缘膜的绝缘层的三层结构。 沟道区域和栅极绝缘膜之间的界面的粗糙度小于几nm，从而提高了晶体管的电流驱动能力。

公开(公告)号：US5633176A

公开(公告)日：1997-05-27

申请号：US463687

申请日：1995-06-05

申请人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

发明人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

IPC分类号： G02F1/1362 ,  H01L27/12 ,  H01L21/84 ,  H01L21/304

CPC分类号： G02F1/13454 ,  H01L27/12 ,  H01L27/1203 ,  G02F2001/136281 ,  G02F2202/105 ,  Y10S438/977

摘要： A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve comprising a pixel array region and a drive circuit region on a major face of the semiconductor substrate. A stopper film is formed on the major face of the semiconductor substrate at the pixel array region, and a pixel array is formed over the silicon oxide stopper film. A drive circuit is formed on the drive circuit region, and silicon oxide posts are embedded in the major face of the semiconductor substrate at the drive circuit region. A thickness of the semiconductor substrate is then selectively removed from a back face opposite to the major face thereof to reach the stopper film. After the selective removing step, the portion of the semiconductor substrate under the pixel region is completely removed while a portion of the semiconductor substrate under the drive circuit region remains.

摘要翻译： 半导体衬底被用于整体形成驱动电路和像素阵列以产生用于光阀的透明半导体器件，其包括在半导体衬底的主面上的像素阵列区域和驱动电路区域。 在像素阵列区域的半导体基板的主面上形成有阻挡膜，在氧化硅阻挡膜上形成像素阵列。 在驱动电路区域上形成驱动电路，在驱动电路区域，氧化硅柱嵌入半导体基板的主面。 然后从与其主面相反的背面选择性地去除半导体衬底的厚度以到达阻挡膜。 在选择性去除步骤之后，半导体衬底在像素区域下方的部分被完全去除，而驱动电路区域下的半导体衬底的一部分保留。

公开(公告)号：US5610428A

公开(公告)日：1997-03-11

申请号：US476221

申请日：1995-06-07

申请人： Yukio Suzuki ,  Haruo Konishi ,  Yoshikazu Kojima

发明人： Yukio Suzuki ,  Haruo Konishi ,  Yoshikazu Kojima

IPC分类号： H01L21/8247 ,  H01L21/76 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/092 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L29/784 ,  H01L29/78

CPC分类号： H01L29/7883 ,  H01L27/105

摘要： A semiconductor integrated circuit comprises a semiconductor substrate of a first conductivity type, at least one electrically erasable floating gate type semiconductor non-volatile memory transistor disposed on a surface of the semiconductor substrate, a well region of a second conductivity type formed in the surface of the semiconductor substrate, and a program voltage switching transistor of the first conductivity type disposed in the well region. A field insulation film is disposed on the surface of the semiconductor substrate. A field dope region of the first conductivity type is provided beneath the field insulation film. The field dope region preferably has an impurity concentration higher than an impurity concentration of the semiconductor substrate. By this construction, current leakage is prevented at the time when a high voltage occurs such as, for example, when performing a writing operation with respect to EEPROM.

摘要翻译： 半导体集成电路包括第一导电类型的半导体衬底，设置在半导体衬底的表面上的至少一个电可擦除浮栅型半导体非易失性存储晶体管，形成在第二导电类型的表面上的第二导电类型的阱区 所述半导体衬底以及设置在所述阱区中的所述第一导电类型的编程电压开关晶体管。 在半导体衬底的表面上设置场绝缘膜。 第一导电类型的场掺杂区域设置在场绝缘膜的下方。 场掺杂区优选具有高于半导体衬底的杂质浓度的杂质浓度。 通过这种结构，在诸如例如当对EEPROM执行写入操作时出现高电压时，防止了电流泄漏。

公开(公告)号：US5574292A

公开(公告)日：1996-11-12

申请号：US57986

申请日：1993-05-05

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Tsuneo Yamazaki ,  Tadao Iwaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Tsuneo Yamazaki ,  Tadao Iwaki

IPC分类号： H01L29/78 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L27/1203 ,  H01L29/78609 ,  H01L29/78621 ,  G02F2202/105

摘要： A semiconductor device has an integrated circuit formed in a monosilicon layer provided on an electrically insulative material. The monosilicon layer has an integrated circuit formed thereon, and a passivation film covers the integrated circuit. A support member is fixed to the electrically insulative material through an adhesive layer to support the monosilicon layer. The integrated circuit comprises an MIS transistor having a source region, drain region, and channel region formed in the monosilicon layer. The semiconductor device is suitable for use in a high speed, high capacity liquid crystal light valve having a structure where a pixel switching element group and a peripheral driver circuit are formed integrally on a common substrate.

摘要翻译： 半导体器件具有形成在设置在电绝缘材料上的单硅层中的集成电路。 单晶硅层具有形成在其上的集成电路，钝化膜覆盖集成电路。 支撑构件通过粘合剂层固定到电绝缘材料以支撑单硅层。 集成电路包括具有形成在单硅层中的源极区，漏极区和沟道区的MIS晶体管。 该半导体装置适用于具有像素开关元件组和周边驱动电路一体地形成在共同的基板上的结构的高速，高容量的液晶光阀。

公开(公告)号：US5572045A

公开(公告)日：1996-11-05

申请号：US460538

申请日：1995-06-02

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： Herein disclosed are a semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film formed integrally with transistor elements is laminated on an insulating thin film and is formed with through holes and in which the insulating thin film is formed on its back with electrodes and a shielding film, and a light valve device using the semiconductor device. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate, which is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film, and a transparent opposite substrate, so that the optical transparency of the electrooptical substance is controlled by the switching elements.

摘要翻译： 这里公开了具有双面布线结构的半导体器件，其中与绝缘薄膜层叠与晶体管元件一体形成的单晶半导体薄膜并形成有通孔，并且其中形成绝缘薄膜 其背面具有电极和屏蔽膜，以及使用该半导体器件的光阀装置。 在单晶半导体薄膜上形成晶体管的开关元件，与开关元件电连接的像素电极以及用于扫描和驱动开关元件的驱动电路。 还公开了一种微型高密度光阀装置。 在该光阀装置中，在形成有电极的多层基板和通过绝缘膜形成有分组元件的一侧的绝缘膜的相对侧的屏蔽膜之间设置电光物质， 透明的相对基板，使得电光物质的光学透明度由开关元件控制。

公开(公告)号：US5233211A

公开(公告)日：1993-08-03

申请号：US771756

申请日：1991-10-04

申请人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

发明人： Yutaka Hayashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

IPC分类号： G02F1/136 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/86 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/13454 ,  G02F1/136209 ,  G02F1/1368 ,  H01L21/84 ,  H01L21/86 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/66772 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78654 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  Y10S148/012 ,  Y10S148/15 ,  Y10S438/977

摘要： The invention provides a semi-conductor light valve device and a process for fabricating the same. The device comprises a composite substrate having a supporte substrate, a light-shielding thin film formed on said supporte substrate and semiconductive thin film disposed on the light-shielding thin film with interposing an insulating thin film. A switching element made of a transistor and a transparent electrode for driving light valve are formed on the semiconductive thin film, and the switching element and the transparent electrode are connected electrically with each other. The transistor includes a channel region in the semiconductive thin film and a main gate electrode for controlling the conduction in the channel region, and the light-shielding thin film layer is so formed as to cover the channel region on the side opposite to said channel region, so as to prevent effectively a back channel and shut off the incident light.

公开(公告)号：US5053842A

公开(公告)日：1991-10-01

申请号：US530269

申请日：1990-05-30

申请人： Yoshikazu Kojima

发明人： Yoshikazu Kojima

IPC分类号： H01L27/115 ,  H01L29/788

CPC分类号： H01L29/7885 ,  H01L27/115

摘要： The invention is directed to a semiconductor nonvolatile memory of the floating gate type having dual gate structure comprised of a first channel region having a channel resistance controlled by a control gate electrode and a second channel region having a channel resistance controlled by a floating gate electrode. The first channel region is formed on one face section of semiconductor substrate which has a crystal face orientation different from that of another face section on which the second channel region is formed. By such construction, channel length of the first and second channel regions can be shortened to increase memory capacity density and to improve quality.

摘要翻译： 本发明涉及具有双栅极结构的浮栅型半导体非易失性存储器，由具有由控制栅极电极控制的沟道电阻的第一沟道区和由浮置栅电极控制的沟道电阻的第二沟道区构成。 第一沟道区形成在半导体衬底的一个面部区域上，其具有不同于其上形成有第二沟道区的另一面部区域的晶面取向。 通过这样的结构，可以缩短第一和第二通道区域的通道长度，以增加存储器容量密度并提高质量。