公开(公告)号：US10892282B2

公开(公告)日：2021-01-12

申请号：US16024997

申请日：2018-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro Takahashi ,  Takuya Hirohashi ,  Masashi Tsubuku ,  Noritaka Ishihara ,  Masashi Oota

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/04 ,  H01L21/66 ,  H01L29/24 ,  G02F1/1368 ,  G01N23/207 ,  H01L29/66 ,  C23C14/08 ,  H01L29/786 ,  H01L21/02

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US10700213B2

公开(公告)日：2020-06-30

申请号：US16353450

申请日：2019-03-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H01L29/08 ,  H01L29/24

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

公开(公告)号：US10249876B2

公开(公告)日：2019-04-02

申请号：US15874123

申请日：2018-01-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro Kawakami ,  Tatsuya Ikenuma ,  Teruaki Ochiai ,  Shuhei Yoshitomi ,  Mako Motoyoshi ,  Hiroyuki Miyake ,  Yohei Momma ,  Takuya Hirohashi ,  Satoshi Seo

IPC: H01M4/505 ,  H01M4/485 ,  H01M4/48 ,  H01M4/62 ,  H01M4/583 ,  G06F1/16 ,  G04G21/00 ,  G04C10/00 ,  H01M4/36 ,  H01M4/525 ,  H01M10/052

Abstract: A lithium-ion secondary battery with high capacity is provided. Alternatively, a lithium-ion secondary battery with unproved cycle characteristics is provided. To achieve this, an active material including a particle having a cleavage plane and a layer containing carbon covering at least part of the cleavage plane is provided. The particle having the cleavage plane contains lithium, manganese, nickel, and oxygen. The layer containing carbon preferably contains graphene. When a lithium-ion secondary battery is fabricated using an electrode including the particle having the cleavage plane at least part of which is covered with the layer containing carbon as an active material, the discharge capacity can be increased and the cycle characteristics can be improved.

公开(公告)号：US10141425B2

公开(公告)日：2018-11-27

申请号：US15856763

申请日：2017-12-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Takashi Shimazu

IPC: H01L21/00 ,  H01L21/336 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L29/786

Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

公开(公告)号：US10115831B2

公开(公告)日：2018-10-30

申请号：US15220532

申请日：2016-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/04 ,  H01L29/786 ,  H01L27/12 ,  H01L29/45

Abstract: In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced.

公开(公告)号：US09991396B2

公开(公告)日：2018-06-05

申请号：US15292530

申请日：2016-10-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L27/12 ,  H01L29/66 ,  H01L29/08 ,  H01L29/24 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

公开(公告)号：US09853167B2

公开(公告)日：2017-12-26

申请号：US15090937

申请日：2016-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masayuki Sakakura ,  Ryosuke Watanabe ,  Junichiro Sakata ,  Kengo Akimoto ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/12 ,  H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L21/263 ,  H01L29/66 ,  H01L29/24 ,  H01L29/417

CPC classification number: H01L29/78696 ,  H01L21/2636 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

公开(公告)号：US09653728B2

公开(公告)日：2017-05-16

申请号：US14969949

申请日：2015-12-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takuya Hirohashi ,  Teppei Oguni

IPC: H01M4/583 ,  H01M4/38 ,  B82Y30/00 ,  H01G11/32 ,  H01M4/587 ,  H01M10/0525 ,  B82Y40/00

CPC classification number: H01M4/386 ,  B82Y30/00 ,  B82Y40/00 ,  H01G11/32 ,  H01M4/583 ,  H01M4/587 ,  H01M10/0525 ,  H01M2220/20 ,  H01M2220/30 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54 ,  Y02T10/7011 ,  Y02T10/7022

Abstract: An object is to provide graphene which has high conductivity and is permeable to ions of lithium or the like. Another object is to provide, with use of the graphene, a power storage device with excellent charging and discharging characteristics. Graphene having a hole inside a ring-like structure formed by carbon and nitrogen has conductivity and is permeable to ions of lithium or the like. The nitrogen concentration in graphene is preferably higher than or equal to 0.4 at. % and lower than or equal to 40 at. %. With use of such graphene, ions of lithium or the like can be preferably made to pass; thus, a power storage device with excellent charging and discharging characteristics can be provided.

公开(公告)号：US09064966B2

公开(公告)日：2015-06-23

申请号：US14141538

申请日：2013-12-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masahiro Takahashi ,  Takuya Hirohashi ,  Masashi Tsubuku ,  Masashi Oota

IPC: H01L29/786

CPC classification number: H01L29/04 ,  H01L29/045 ,  H01L29/24 ,  H01L29/247 ,  H01L29/26 ,  H01L29/7869 ,  H01L29/78693

Abstract: A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer.

Abstract translation: 提供了包括氧化物半导体的高度可靠的半导体器件。 提供了一种半导体器件，包括氧化物半导体层，与氧化物半导体层接触的绝缘层，与氧化物半导体层重叠的栅极电极层，以及与氧化物半导体层电连接的源极电极层和漏极电极层 。 氧化物半导体层包括具有尺寸小于或等于10nm的晶体的第一区域和与其间设置有第一区域的绝缘层重叠的第二区域，并且其包括其c轴对准的晶体部分 与氧化物半导体层的表面的法线矢量平行的方向。

公开(公告)号：US20150123050A1

公开(公告)日：2015-05-07

申请号：US14589455

申请日：2015-01-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tamae Moriwaka ,  Takuya Hirohashi ,  Kuniharu Nomoto ,  Takuya Miwa

IPC: H01M4/58 ,  H01M4/62

CPC classification number: H01M4/5825 ,  B82Y30/00 ,  H01M4/131 ,  H01M4/133 ,  H01M4/364 ,  H01M4/587 ,  H01M4/625 ,  H01M10/052 ,  H01M2220/30 ,  Y02T10/7011

Abstract: A positive-electrode active material with improved electrical conductivity, and a power storage device using the material are provided. A positive-electrode active material with large capacity, and a power storage device using the material are provided. A core including lithium metal oxide is used as a core of a main material of the positive-electrode active material, and one to ten pieces of graphene is used as a covering layer for the core. A hole is provided for graphene, whereby transmission of a lithium ion is facilitated, resulting in improvement of use efficiency of current.

Abstract translation: 提供导电性提高的正极活性物质和使用该材料的蓄电装置。 提供具有大容量的正极活性物质和使用该材料的蓄电装置。 使用包含锂金属氧化物的芯作为正极活性材料的主要材料的芯，并且使用一至十个石墨烯作为芯的覆盖层。 为石墨烯提供了一个孔，从而促进了锂离子的传输，从而提高了电流的使用效率。