公开(公告)号：US4844588A

公开(公告)日：1989-07-04

申请号：US148097

申请日：1988-01-25

申请人： Shunpei Yamazaki ,  Takashi Inushima ,  Akira Mase ,  Toshimitsu Konuma ,  Minoru Miyazaki ,  Mitsunori Sakama

发明人： Shunpei Yamazaki ,  Takashi Inushima ,  Akira Mase ,  Toshimitsu Konuma ,  Minoru Miyazaki ,  Mitsunori Sakama

IPC分类号： G02F1/136 ,  G02F1/1365 ,  H01L27/146

CPC分类号： G02F1/1365

摘要： A method for manufacturing a liquid crystal device including forming a semiconductor layer on a first substrate and an underlying conductive layer; separating the semiconductor layer and the underlying conductive layer into the elements of an array by removing the parts of the semiconductor and the conductive layer between the elements; insulating the side surfaces of the elements of said array; forming an overlying conductive layer on the first substrate over the array; removing the conductive layer other than at least one strip extending over a part of each surface of the elements arranged in a line, together with the underlying semiconductor layer whereby parts of the separated underlying conductors are exposed in the form of a plurality of first electrodes; and mating the first substrate to a second substrate having a plurality of second electrodes corresponding to the first electrodes, with a liquid crystal layer in between.

摘要翻译： 一种制造液晶器件的方法，包括在第一衬底和下导电层上形成半导体层; 通过去除半导体的部件和元件之间的导电层将半导体层和下面的导电层分离成阵列的元件; 绝缘所述阵列的元件的侧表面; 在所述阵列上的所述第一衬底上形成覆盖的导电层; 去除除了下列半导体层之外的布置在一行中的元件的每个表面的一部分上延伸的至少一个条带之外的导电层，由此分离的下面的导体的一部分以多个第一电极的形式暴露; 以及将所述第一基板与具有与所述第一电极对应的多个第二电极的第二基板配合，其间具有液晶层。

公开(公告)号：US4780794A

公开(公告)日：1988-10-25

申请号：US82908

申请日：1987-08-10

申请人： Akira Mase ,  Toshimitsu Konuma ,  Mitsunori Sakama ,  Takashi Inushima ,  Shunpei Yamazaki

发明人： Akira Mase ,  Toshimitsu Konuma ,  Mitsunori Sakama ,  Takashi Inushima ,  Shunpei Yamazaki

IPC分类号： B32B33/00 ,  B05D3/06 ,  B05D5/12 ,  H01L21/312 ,  H01L27/12 ,  H05K3/00 ,  H05K1/18

CPC分类号： H01L27/12

摘要： A electronic multilayer device is formed within a photocured insulative layer using a transparent substrate thereby forming a surface contamination free device without shorts between the layers of the device.

摘要翻译： 使用透明基板在光固化绝缘层内形成电子多层器件，从而形成在器件层之间没有短路的无表面污染的器件。

公开(公告)号：US07166899B2

公开(公告)日：2007-01-23

申请号：US11181788

申请日：2005-07-15

申请人： Mitsunori Sakama ,  Noriko Ishimaru ,  Taketomi Asami ,  Shunpei Yamazaki

发明人： Mitsunori Sakama ,  Noriko Ishimaru ,  Taketomi Asami ,  Shunpei Yamazaki

IPC分类号： H01L29/94 ,  H01L31/062

CPC分类号： H01L27/1259 ,  G02B27/017 ,  G02F1/133345 ,  G02F1/1362 ,  G02F2202/103 ,  G02F2202/105 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L2029/7863

摘要： A silicon oxynitride film is manufactured using SiH4, N2O and H2 by plasma CVD, and it is applied to the gate insulating film (1004 in FIG. 1A) of a TFT. The characteristics of the silicon oxynitride film are controlled chiefly by changing the flow rates of N2O and H2. A hydrogen concentration and a nitrogen concentration in the film can be increased by the increase of the flow rate of H2. Besides, the hydrogen concentration and the nitrogen concentration in the film can be decreased, to heighten an oxygen concentration by the increase of the flow rate of N2O. The gate insulating film ensures the stability and reliability of the characteristics of the TFT, such as the threshold voltage (Vth) and sub-threshold constant (S value) thereof.

摘要翻译： 使用SiH 4 N，N 2 O和H 2 O等通过等离子体CVD制造氮氧化硅膜，并且将其施加到栅极绝缘膜 （图1A中的1004）。 氮氧化硅膜的特性主要通过改变N 2 O 2和H 2 O 2的流速来控制。 可以通过增加H 2 2的流量来增加膜中的氢浓度和氮浓度。 此外，可以降低膜中的氢浓度和氮浓度，以通过N 2 O 2 O的流量的增加来提高氧浓度。 栅极绝缘膜确保TFT的特性的稳定性和可靠性，例如阈值电压（V SUB）和其阈值常数（S值）。

公开(公告)号：US06951828B2

公开(公告)日：2005-10-04

申请号：US09917095

申请日：2001-07-26

申请人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Masaaki Hiroki

发明人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Masaaki Hiroki

IPC分类号： C23C16/40 ,  C23C16/505 ,  H01L21/316 ,  H01L21/31

CPC分类号： H01L21/02164 ,  C23C16/401 ,  C23C16/402 ,  C23C16/505 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L29/66757 ,  H01L29/78621

摘要： In a process of forming a silicon oxide film 116 that constitutes an interlayer insulating film with TEOS as a raw material through the plasma CVD method, the RF output is oscillated at 50 W, and the RF output is gradually increased from 50 W to 250 W (an output value at the time of forming a film) after discharging (after the generation of O2-plasma). A TEOS gas is supplied to start the film formation simultaneously when the RF output becomes 250 W, or while the timing is shifted. As a result, because the RF power supply is oscillated at a low output when starting discharging, a voltage between the RF electrodes can be prevented from changing transitionally and largely.

摘要翻译： 在通过等离子体CVD法形成以TEOS为原料的层间绝缘膜形成氧化硅膜116的过程中，RF输出以50W振荡，RF输出从50W逐渐升高到250W （在形成膜之后的输出值）（放电后（在产生O 2·2 - 等离子体）之后）。 当RF输出变为250W时，或当定时偏移时，提供TEOS气体同时开始成膜。 结果，由于在开始放电时RF电源以低输出振荡，因此可以防止RF电极之间的电压在很大程度上发生变化。

公开(公告)号：US20050176221A1

公开(公告)日：2005-08-11

申请号：US11102727

申请日：2005-04-11

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Mitsunori Sakama ,  Hisashi Abe ,  Hiroshi Uehara ,  Mika Ishiwata

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Mitsunori Sakama ,  Hisashi Abe ,  Hiroshi Uehara ,  Mika Ishiwata

IPC分类号： C23C16/44 ,  C23C16/50 ,  C23C16/509 ,  H01J37/32 ,  H01L21/31 ,  C25F1/00 ,  H01L21/20

CPC分类号： H01J37/32477 ,  C23C16/4401 ,  C23C16/5096 ,  Y10S438/905

摘要： In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.

摘要翻译： 在等离子体CVD装置中，防止了不必要的放电，例如电弧放电，由于附着在反应室上的膜的剥离引起的颗粒的量减少，并且在该设备的工作时间内有助于生产的时间的百分比增加 同时保持设备的扩大和易于加工的性能。 等离子体CVD装置被构造成使得在具有电源113，真空排气装置118和反应气体引入管114的导电反应室104中，在由电极111围绕的空间中产生等离子体115，衬底保持器 112和绝缘体120。

公开(公告)号：US20050009309A1

公开(公告)日：2005-01-13

申请号：US10911710

申请日：2004-08-05

申请人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Masaaki Hiroki

发明人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Masaaki Hiroki

IPC分类号： C23C16/40 ,  C23C16/505 ,  H01L21/316 ,  H01L21/00 ,  C30B1/00 ,  H01L21/31 ,  H01L21/84

CPC分类号： H01L21/02164 ,  C23C16/401 ,  C23C16/402 ,  C23C16/505 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L29/66757 ,  H01L29/78621

摘要： In a process of forming a silicon oxide film 116 that constitutes an interlayer insulating film with TEOS as a raw material through the plasma CVD method, the RF output is oscillated at 50 W, and the RF output is gradually increased from 50 W to 250 W (an output value at the time of forming a film) after discharging (after the generation of O2-plasma). A TEOS gas is supplied to start the film formation simultaneously when the RF output becomes 250 W, or while the timing is shifted. As a result, because the RF power supply is oscillated at a low output when starting discharging, a voltage between the RF electrodes can be prevented from changing transitionally and largely.

摘要翻译： 在通过等离子体CVD法形成以TEOS为原料的层间绝缘膜形成氧化硅膜116的过程中，RF输出以50W振荡，RF输出从50W逐渐升高到250W （形成膜时的输出值）（放电后）（O 2等离子体生成后）。 当RF输出变为250W时，或当定时偏移时，提供TEOS气体同时开始成膜。 结果，由于在开始放电时RF电源以低输出振荡，因此可以防止RF电极之间的电压在很大程度上发生变化。

公开(公告)号：US06635589B2

公开(公告)日：2003-10-21

申请号：US09286999

申请日：1999-04-07

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Mitsunori Sakama ,  Tomohiko Sato ,  Satoshi Teramoto ,  Shigefumi Sakai

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Mitsunori Sakama ,  Tomohiko Sato ,  Satoshi Teramoto ,  Shigefumi Sakai

IPC分类号： H01L2142

CPC分类号： H01L21/28158 ,  C23C14/58 ,  C23C16/56 ,  H01L29/66757 ,  Y10S438/909 ,  Y10S438/91 ,  Y10S438/958

摘要： Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in a dinitrogen monoxide atmosphere, or in an NH3 or N2H4 atmosphere, while irradiating with ultraviolet light, reducing the hydrogen and carbon contents in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular. Furthermore, silicon oxide films which are good as gate insulating films have been formed by subjecting silicon oxide films which have been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700° C. in an N2O atmosphere (or hydrogen nitride atmosphere) while irradiating with ultraviolet light, and then carrying out a heat treatment at 300-700° C. in a hydrogen nitride atmosphere (N2O atmosphere), and reducing the amount of hydrogen and carbon in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular.

摘要翻译： 作为栅极绝缘膜良好的氧化硅膜通过在300-700℃下通过PVD法或CVD法对形成在包含硅膜的有源层上的氧化硅膜进行热处理而形成。 在一氧化二氮气氛中，或在NH 3或N 2 H 4气氛中，同时用紫外线照射，降低氧化硅膜中的氢和碳含量，并将氮引入与硅膜的边界。 此外，作为栅极绝缘膜良好的氧化硅膜已经通过利用PVD法或CVD法在由硅膜的活性层上形成的氧化硅膜在300-700°的温度下进行热处理而形成 在氮氧化物气氛（N 2 O气氛）中在N2O气氛（或氮化氢气氛）中照射紫外线，然后在300-700℃下进行热处理，并减少氢和碳的量 在氧化硅膜中，特别是将氮引入与硅膜的边界。

公开(公告)号：US06482752B1

公开(公告)日：2002-11-19

申请号：US08685788

申请日：1996-07-24

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

IPC分类号： H01L21461

CPC分类号： H01L21/02686 ,  C23C16/303 ,  C23C16/345 ,  C23C16/402 ,  C23C16/54 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/67155 ,  H01L21/67207 ,  H01L27/1281 ,  H01L29/41733 ,  Y10S438/905 ,  Y10S438/908

摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.

摘要翻译： 基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。 更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能， 所述处理室中的至少一个具有加热功能。 所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

公开(公告)号：US06396078B1

公开(公告)日：2002-05-28

申请号：US08666104

申请日：1996-06-19

申请人： Hideki Uochi ,  Masahiko Hayakawa ,  Mitsunori Sakama ,  Toshimitsu Konuma ,  Shunpei Yamazaki

发明人： Hideki Uochi ,  Masahiko Hayakawa ,  Mitsunori Sakama ,  Toshimitsu Konuma ,  Shunpei Yamazaki

IPC分类号： H01L2976

CPC分类号： H01L29/66757 ,  H01L21/76804 ,  H01L23/5283 ,  H01L23/5329 ,  H01L29/41733 ,  H01L29/42384 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having an improved contact hole through an interlayer insulator. A first insulating film comprising silicon nitride is deposited. A second insulating film comprising silicon oxide is deposited on the first insulating film. The deposition condition of the second insulating film is varied during the deposition so that the etching rate of the second insulating film increases from a lower portion toward an upper portion. Thereby, a contact hole which is formed by etching through the first and second insulating films has a tapered configuration to improve a reliability of a connection made therein.

公开(公告)号：US5970384A

公开(公告)日：1999-10-19

申请号：US510288

申请日：1995-08-02

申请人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Mitsunori Sakama ,  Tomohiko Sato ,  Satoshi Teramoto ,  Shigefumi Sakai

发明人： Shunpei Yamazaki ,  Yasuhiko Takemura ,  Mitsunori Sakama ,  Tomohiko Sato ,  Satoshi Teramoto ,  Shigefumi Sakai

IPC分类号： H01L21/316 ,  C23C14/58 ,  C23C16/56 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8234

CPC分类号： H01L21/28158 ,  C23C14/58 ,  C23C16/56 ,  H01L29/66757 ,  Y10S438/909 ,  Y10S438/91 ,  Y10S438/958

摘要： Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700.degree. C. in a dinitrogen monoxide atmosphere, or in an NH.sub.3 or N.sub.2 H.sub.4 atmosphere, while irradiating with ultraviolet light, reducing the hydrogen and carbon contents in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular. Furthermore, silicon oxide films which are good as gate insulating films have been formed by subjecting silicon oxide films which have been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700.degree. C. in an N.sub.2 O atmosphere (or hydrogen nitride atmosphere) while irradiating with ultraviolet light, and then carrying out a heat treatment at 300-700.degree. C. in a hydrogen nitride atmosphere (N.sub.2 O atmosphere), and reducing the amount of hydrogen and carbon in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular.

摘要翻译： 作为栅极绝缘膜良好的氧化硅膜通过在300-700℃下通过PVD法或CVD法将形成在包含硅膜的有源层上的氧化硅膜进行热处理而形成。 在一氧化二氮气氛中，或在NH 3或N 2 H 4气氛中，同时用紫外线照射，降低氧化硅膜中的氢和碳含量，并将氮引入与硅膜的边界。 此外，作为栅极绝缘膜良好的氧化硅膜已经通过利用PVD法或CVD法在包含硅膜的有源层上形成的氧化硅膜在300-700℃下进行热处理而形成 在氮氧化物气氛（或氮气氛围）中，用紫外线照射，然后在氮气气氛（N2O氛围）中在300-700℃下进行热处理，并减少氢和碳的量 在氧化硅膜中，特别是将氮引入与硅膜的边界。