公开(公告)号：US07679116B2

公开(公告)日：2010-03-16

申请号：US12326138

申请日：2008-12-02

申请人： Hiroshi Yuzurihara ,  Ryuichi Mishima ,  Takanori Watanabe ,  Takeshi Ichikawa ,  Seiichi Tamura

发明人： Hiroshi Yuzurihara ,  Ryuichi Mishima ,  Takanori Watanabe ,  Takeshi Ichikawa ,  Seiichi Tamura

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14687 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643

摘要： A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2

摘要翻译： 一种光电转换装置，包括第一导电类型的半导体衬底和具有第一导电类型的杂质区和与第一导电类型相反的第二导电类型的多个杂质区的光电转换元件。 多个第二导电型杂质区域至少包括第一杂质区域，设置在第一杂质区域和衬底表面之间的第二杂质区域和设置在第二杂质区域和第二杂质区域的表面之间的第三杂质区域 底物。 对应于第一杂质区域中的杂质浓度的峰值的浓度C1，与第二杂质区域中的杂质浓度的峰值对应的浓度C2和与第三杂质区域中的杂质浓度的峰值相对应的浓度C3 满足以下关系：C2

公开(公告)号：US07476560B2

公开(公告)日：2009-01-13

申请号：US11941614

申请日：2007-11-16

申请人： Hiroshi Yuzurihara

发明人： Hiroshi Yuzurihara

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14643

摘要： In a photoelectric conversion device comprising a photoelectric-conversion section and a peripheral circuit section where signals sent from the photoelectric-conversion section are processed, the both sections being provided on the same semiconductor substrate, a semiconductor compound layer of a high-melting point metal is provided on the source and drain and a gate electrode of an MOS transistor that forms the peripheral circuit section, and the top surface of a semiconductor diffusion layer that serves as a light-receiving part of the photoelectric conversion section is in contact with an insulating layer.

摘要翻译： 在包括光电转换部分和从光电转换部分发送信号的外围电路部分的光电转换装置中，两部分设置在相同的半导体衬底上，高熔点金属的半导体化合物层 设置在源极和漏极以及形成外围电路部分的MOS晶体管的栅电极，并且用作光电转换部分的光接收部分的半导体扩散层的顶表面与绝缘体 层。

公开(公告)号：US07473948B2

公开(公告)日：2009-01-06

申请号：US11941675

申请日：2007-11-16

申请人： Hiroshi Yuzurihara ,  Ryuichi Mishima ,  Takanori Watanabe ,  Takeshi Ichikawa ,  Seiichi Tamura

发明人： Hiroshi Yuzurihara ,  Ryuichi Mishima ,  Takanori Watanabe ,  Takeshi Ichikawa ,  Seiichi Tamura

IPC分类号： H01L29/06

CPC分类号： H01L27/14687 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643

摘要： A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2

摘要翻译： 一种光电转换装置，包括第一导电类型的半导体衬底和具有第一导电类型的杂质区和与第一导电类型相反的第二导电类型的多个杂质区的光电转换元件。 多个第二导电型杂质区域至少包括第一杂质区域，设置在第一杂质区域和衬底表面之间的第二杂质区域和设置在第二杂质区域和第二杂质区域的表面之间的第三杂质区域 底物。 对应于第一杂质区域中的杂质浓度的峰值的浓度C1，与第二杂质区域中的杂质浓度的峰值对应的浓度C2和与第三杂质区域中的杂质浓度的峰值相对应的浓度C3 满足以下关系：<？in-line-formula description =“In-line Formulas”end =“lead”？> C2

公开(公告)号：US20080070341A1

公开(公告)日：2008-03-20

申请号：US11941614

申请日：2007-11-16

申请人： Hiroshi Yuzurihara

发明人： Hiroshi Yuzurihara

IPC分类号： H01L31/18

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14643

摘要： In a photoelectric conversion device comprising a photoelectric-conversion section and a peripheral circuit section where signals sent from the photoelectric-conversion section are processed, the both sections being provided on the same semiconductor substrate, a semiconductor compound layer of a high-melting point metal is provided on the source and drain and a gate electrode of an MOS transistor that forms the peripheral circuit section, and the top surface of a semiconductor diffusion layer that serves as a light-receiving part of the photoelectric conversion section is in contact with an insulating layer.

摘要翻译： 在包括光电转换部分和从光电转换部分发送信号的外围电路部分的光电转换装置中，两部分设置在相同的半导体衬底上，高熔点金属的半导体化合物层 设置在源极和漏极以及形成外围电路部分的MOS晶体管的栅电极，并且用作光电转换部分的光接收部分的半导体扩散层的顶表面与绝缘体 层。

公开(公告)号：US20080057615A1

公开(公告)日：2008-03-06

申请号：US11840583

申请日：2007-08-17

申请人： Takashi Okagawa ,  Hiroaki Naruse ,  Hiroshi Yuzurihara ,  Shigeru Nishimura ,  Takeshi Aoki ,  Yuya Fujino

发明人： Takashi Okagawa ,  Hiroaki Naruse ,  Hiroshi Yuzurihara ,  Shigeru Nishimura ,  Takeshi Aoki ,  Yuya Fujino

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L21/76877 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14643

摘要： A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other. And the step of forming the first electroconductor, and the step of forming the third electroconductor are performed simultaneously.

摘要翻译： 由光电转换元件的光的入射孔径变宽的结构产生的噪声降低。 在光电转换装置的制造方法中，布置在布置在第一层间绝缘层中的第一孔中的第一导电体不是通过布线层中包含的布线将第一半导体区域电连接到放大MOS晶体管的栅电极。 此外，第二电导体将不同于第一半导体区域的第二半导体区域电连接到布线。 在该第二电导体的结构中，布置在布置在第一层间绝缘层中的第二孔中的第三导电体和布置在布置在第二层间绝缘层中的第三孔中的第四导电体彼此堆叠并电连接。 并且同时进行形成第一导电体的步骤和形成第三导电体的步骤。

公开(公告)号：US20080036019A1

公开(公告)日：2008-02-14

申请号：US10599427

申请日：2005-04-27

申请人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Takeshi Ichikawa ,  Ryuichi Mishima

发明人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Takeshi Ichikawa ,  Ryuichi Mishima

IPC分类号： H01L27/14

CPC分类号： H01L27/14601 ,  H01L27/14609 ,  H04N5/335

摘要： The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.

摘要翻译： 本发明涉及一种光电转换装置，其中包括用于将光转换为信号电荷的光电转换装置的像素和包括用于处理信号电荷的电路的外围电路的像素， 相同的衬底，包括：用于形成光电区域的第一导电类型的第一半导体区域，第一半导体区域形成在第二导电类型的第二半导体区域中; 以及第一导电类型的第三半导体区域和用于形成外围电路的第二导电类型的第四半导体区域，第三和第四半导体区域形成在第二半导体区域中; 其中，所述第一半导体区域的杂质浓度高于所述第三半导体区域的杂质浓度。

公开(公告)号：US20050056905A1

公开(公告)日：2005-03-17

申请号：US10937382

申请日：2004-09-10

申请人： Hideshi Kuwabara ,  Hiroshi Yuzurihara ,  Takayuki Kimura ,  Mahito Shinohara

发明人： Hideshi Kuwabara ,  Hiroshi Yuzurihara ,  Takayuki Kimura ,  Mahito Shinohara

IPC分类号： H01L27/146 ,  H01L29/732 ,  H01L31/10

CPC分类号： H01L27/14687 ,  H01L27/1463 ,  H01L27/14632

摘要： In a photoelectric conversion device having a buried layer in a part of an anode and a cathode of a photodiode, such as a CCD having a sensor structure and a CMOS sensor, well of the same conduction type as the conduction type of the buried layer can be disposed in a peripheral circuit and the potential of each well is independently controlled. In a photoelectric conversion device which is constructed in such a manner that on the whole area of a substrate of a specific conduction type there are disposed a buried layer of a conduction type opposite to the conduction type of the substrate and an epitaxial layer of the same conduction type as the conduction type of the substrate and that well of a conduction type opposite to the conduction type of the substrate are present in a part of the epitaxial layer, buried layer for well isolation of the same conduction type as the conduction type of the substrate which have a higher concentration than the epitaxial layer is disposed between the lower part of the well and the buried layer.

摘要翻译： 在具有在阳极的一部分中的掩埋层和具有传感器结构的CCD的诸如CCD的CMOS光电二极管的光电转换装置中，与掩埋层的导电类型相同的导电类型 设置在外围电路中，并且每个阱的电位被独立地控制。 在以这样的方式构成的光电转换装置中，在特定导电类型的基板的整个区域上设置有与基板的导电类型相反的导电类型的掩埋层和与其相同的外延层 导电类型作为衬底的导电类型，并且与衬底的导电类型相反的导电类型的阱存在于外延层的一部分中，用于良好隔离导电类型的导电类型的掩埋层 具有比外延层更高的浓度的衬底设置在阱的下部和掩埋层之间。

公开(公告)号：US5861233A

公开(公告)日：1999-01-19

申请号：US662200

申请日：1996-06-11

申请人： Yasuhiro Sekine ,  Genzo Momma ,  Hiroshi Yuzurihara

发明人： Yasuhiro Sekine ,  Genzo Momma ,  Hiroshi Yuzurihara

IPC分类号： G03F1/68 ,  G03F1/80 ,  G03F7/004 ,  G03F7/20 ,  H01L21/033 ,  H01L21/263 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/321 ,  G03C5/00 ,  B05D3/06 ,  B44C1/22

CPC分类号： G03F7/2065 ,  G03F7/004 ,  G03F7/2043 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/263 ,  H01L21/3086 ,  H01L21/321

摘要： A pattern forming method comprises subjecting a surface of a semiconductor substrate to a surface treatment for imparting hydrogen atoms, irradiating a desired region of said surface with an energy ray, selectively forming a metal film on a non-irradiated region other than the desired region, and etching said semiconductor substrate using said metal film as a mask.

摘要翻译： 图案形成方法包括使半导体衬底的表面进行表面处理以赋予氢原子，用能量射线照射所述表面的所需区域，在除所需区域之外的非照射区域上选择性地形成金属膜， 并使用所述金属膜作为掩模蚀刻所述半导体衬底。

公开(公告)号：US5731131A

公开(公告)日：1998-03-24

申请号：US395183

申请日：1995-02-27

申请人： Genzo Momma ,  Hiroshi Yuzurihara

发明人： Genzo Momma ,  Hiroshi Yuzurihara

IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G03F9/00

CPC分类号： G03F7/70433 ,  G03F7/2002 ,  G03F7/70475 ,  H01L21/0274

摘要： Disclosed is a method of manufacturing semiconductor devices in which a desired pattern having an area size larger than the field size that can be obtained in one exposure process step of an exposure device is formed. The manufacturing method includes the steps of dividing the desired pattern into a plurality of portions, and conducting exposure on the dividing patterns in a joined fashion.

公开(公告)号：US5569614A

公开(公告)日：1996-10-29

申请号：US435834

申请日：1995-05-05

申请人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

发明人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/8246 ,  H01L27/112 ,  H01L21/265

CPC分类号： H01L28/40 ,  H01L21/28537 ,  H01L27/112 ,  H01L27/11226 ,  Y10S148/14 ,  Y10S438/974

摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

摘要翻译： 在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。 暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。 金属被选择性地沉积在以左氢原子终止的部分上。