公开(公告)号：US20130183553A1

公开(公告)日：2013-07-18

申请号：US13349255

申请日：2012-01-12

申请人： Hariklia Deligianni ,  Harold J. Hovel ,  Fei Liu

发明人： Hariklia Deligianni ,  Harold J. Hovel ,  Fei Liu

IPC分类号： H01M10/42 ,  H01M4/04 ,  H01M2/20

CPC分类号： H01M2/204 ,  H01G11/16 ,  H01M2/348 ,  H01M10/0436 ,  H01M10/052 ,  H01M10/0562 ,  H01M10/058 ,  H01M2200/103 ,  Y10T29/49108 ,  Y10T29/49115

摘要： A useful lifetime of an energy storage device can be extended by providing a series connection of a battery cell and an self-programming fuse. A plurality of series connections of a battery cell and an self-programming fuse can then be connected in a parallel connection to expand the energy storage capacity of the energy storage device. Each self-programming fuse can be a strip of a metal semiconductor alloy material, which electromigrates when a battery cell is electrically shorted and causes increases in the amount of electrical current therethrough. Thus, each self-programming fuse is a self-programming circuit that opens once the battery cell within the same series connection is shorted.

摘要翻译： 可以通过提供电池单元和自编程保险丝的串联连接来扩展能量存储装置的有用寿命。 然后可以并联连接电池单元和自编程保险丝的多个串联连接以扩大能量存储装置的能量存储容量。 每个自编程保险丝可以是金属半导体合金材料的条带，当电池单元电气短路并导致电流量增加时，电极会电流化。 因此，每个自编程保险丝是一个自编程电路，一旦同一串联连接中的电池单元短路，该自编程电路就会断开。

公开(公告)号：US08486751B2

公开(公告)日：2013-07-16

申请号：US12952465

申请日：2010-11-23

申请人： Lawrence A. Clevenger ,  Harold J. Hovel ,  Rainer Klaus Krause ,  Kevin S. Petrarca ,  Gerd Pfeiffer ,  Kevin M. Prettyman ,  Brian C. Sapp

发明人： Lawrence A. Clevenger ,  Harold J. Hovel ,  Rainer Klaus Krause ,  Kevin S. Petrarca ,  Gerd Pfeiffer ,  Kevin M. Prettyman ,  Brian C. Sapp

IPC分类号： H01L21/00 ,  H01L21/66

CPC分类号： H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a photovoltaic cell using a semiconductor wafer having a front side and a rear side, wherein the photovoltaic cell produces electricity when the front side of the semiconductor wafer is illuminated.

摘要翻译： 使用具有前侧和后侧的半导体晶片制造光伏电池的方法，其中当半导体晶片的前侧被照亮时，光伏电池产生电力。

公开(公告)号：US20130056043A1

公开(公告)日：2013-03-07

申请号：US13408395

申请日：2012-02-29

申请人： Harold J. Hovel

发明人： Harold J. Hovel

IPC分类号： H01L31/042

CPC分类号： H01L31/043 ,  H01L31/042 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/05 ,  H01L31/0504 ,  H01L31/0508 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

摘要： A solar energy conversion device comprises a vertical stack of at least two panels stacked in a hierarchy from an upper panel to a lower panel with each of the panels including a matching array of solar cells having a different energy bandgap from other panels of solar cells in the vertical stack of panels. Each panel in the vertical stack may be arranged with one of the panels having solar cells with a higher energy bandgap situated in the hierarchy and in the stack above others of the panels containing solar cells with a lower energy bandgap. The top surface of the device is adapted for receiving solar energy incident upon the uppermost panel. Each upper panel absorbs a fraction of sunlight with larger solar photon energies larger than the energy bandgap thereof.

摘要翻译： 太阳能转换装置包括从上板到下板层叠的至少两个板的垂直堆叠，每个板包括具有与太阳能电池的其它板的不同能量带隙的太阳能电池的匹配阵列 垂直堆叠的面板。 垂直堆叠中的每个面板可以布置成具有其中一个面板，其中太阳能电池具有位于层级中的较高能量带隙，并且在包含具有较低能量带隙的太阳能电池的其它面板中的叠层中。 该装置的顶表面适于接收入射在最上面的面板上的太阳能。 每个上面板吸收太阳光的一部分太阳能光子能量大于其能带隙。

公开(公告)号：US20120160295A1

公开(公告)日：2012-06-28

申请号：US13167792

申请日：2011-06-24

申请人： Lawrence A. Clevenger ,  Harold J. Hovel ,  Rainer Klaus Krause ,  Kevin S. Petrarca ,  Gerd Pfeiffer ,  Kevin Prettyman ,  Brian C. Sapp

发明人： Lawrence A. Clevenger ,  Harold J. Hovel ,  Rainer Klaus Krause ,  Kevin S. Petrarca ,  Gerd Pfeiffer ,  Kevin Prettyman ,  Brian C. Sapp

IPC分类号： H01L31/042 ,  H01L31/18 ,  G01R31/10

CPC分类号： H02S50/10

摘要： A method for characterizing the electronic properties of a solar cell to be used in a photovoltaic module comprises the steps of performing a room temperature IV curve measurement of the solar cell and classifying the solar cell based on this IV curve measurement. In order to take stress-related effects into account, the solar cells are reclassified depending on the result of an additional measurement conducted on the solar cells under stress. This stress-related measurement may be gained from light induced thermography (LIT) yielding information on diode shunt areas within the solar cell.

摘要翻译： 用于表征在光伏模块中使用的太阳能电池的电子特性的方法包括以下步骤：基于该IV曲线测量，执行太阳能电池的室温IV曲线测量并对太阳能电池进行分类。 为了考虑应力相关的影响，太阳能电池根据在应力下对太阳能电池进行的额外测量的结果重新分类。 该应力相关测量可以从光诱导热成像（LIT）获得，产生关于太阳能电池内的二极管分流区域的信息。

公开(公告)号：US20110272009A1

公开(公告)日：2011-11-10

申请号：US12775939

申请日：2010-05-07

申请人： Cyril Cabral, JR. ,  Harold J. Hovel ,  Xiaoyan Shao

发明人： Cyril Cabral, JR. ,  Harold J. Hovel ,  Xiaoyan Shao

IPC分类号： H01L31/0288 ,  H01L31/0236 ,  H01L31/18

CPC分类号： H01L31/18 ,  H01L31/022425 ,  Y02E10/50

摘要： A grid stack structure of a solar cell, which includes a silicon substrate, wherein a front side of the silicon is doped with phosphorus to form a n-emitter and a back side of the silicon is screen printed with aluminum (Al) metallization; a dielectric layer, which acts as an antireflection coating (ARC), applied on the silicon; a mask layer applied on the front side to define a grid opening of the dielectric layer, wherein an etching method is applied to open an unmasked grid area; a light-induced plated nickel or cobalt layer applied to the front side with electrical contact to the back side Al metallization; a silicide layer formed by rapid thermal annealing of the plated nickel (Ni) or cobalt (Co); an optional barrier layer electrodeposited on the silicide; a copper (Cu) layer electrodeposited on the silicide/barrier film layer; and a thin protective layer is chemically applied or electrodeposited on top of the Cu layer.

摘要翻译： 包括硅衬底的太阳能电池的栅格堆叠结构，其中硅的正面被磷掺杂以形成n发射极，硅的背面用铝（Al）金属化丝网印刷; 作为抗反射涂层（ARC）的介电层，施加在硅上; 施加在前侧的掩模层以限定电介质层的栅格开口，其中施加蚀刻方法以打开未屏蔽的栅格区域; 施加到前侧的光诱导的镀镍或钴层与后侧Al金属化电接触; 通过镀镍（Ni）或钴（Co）的快速热退火形成的硅化物层; 电沉积在硅化物上的可选阻挡层; 电沉积在硅化物/阻挡膜层上的铜（Cu）层; 并且将薄的保护层化学施加或电沉积在Cu层的顶部上。

公开(公告)号：US20110174369A1

公开(公告)日：2011-07-21

申请号：US12689464

申请日：2010-01-19

申请人： Harold J. Hovel ,  Rainer K. Krause ,  Zhengwen Li ,  Huilong Zhu

发明人： Harold J. Hovel ,  Rainer K. Krause ,  Zhengwen Li ,  Huilong Zhu

IPC分类号： H01L31/04 ,  B05D5/12

CPC分类号： G02B1/113 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for fabricating a cell structure includes doping a substrate to form a N-region and a P-region, disposing a first anti-reflective layer on the substrate, disposing a metallic contact paste on the first anti-reflective layer, drying the metallic contact paste to form contacts, disposing a second anti-reflective layer on the first anti-reflective layer and the metallic contacts, and heating the cell structure, wherein heating the cell structure results in metallic contact material penetrating the first anti-reflective layer and contacting the substrate.

摘要翻译： 一种电池结构的制造方法，其特征在于，在衬底上掺杂形成N区和P区，在所述衬底上设置第一抗反射层，在所述第一抗反射层上设置金属接触膏，干燥所述金属 接触膏以形成接触，在第一抗反射层和金属触点上设置第二抗反射层，并加热电池结构，其中加热电池结构导致金属接触材料穿透第一抗反射层并接触 底物。

公开(公告)号：US20100075261A1

公开(公告)日：2010-03-25

申请号：US12234856

申请日：2008-09-22

申请人： Lawrence A. Clevenger ,  Harold J. Hovel ,  Rainer K. Krause ,  Kevin M. Prettyman

发明人： Lawrence A. Clevenger ,  Harold J. Hovel ,  Rainer K. Krause ,  Kevin M. Prettyman

IPC分类号： G03F7/20

CPC分类号： H01L31/022433 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  Y02E10/50

摘要： Processes for fabricating a contact grid for a photovoltaic cell generally includes providing a photovoltaic cell having an antireflective coating disposed on a sun facing side, the photovoltaic cell comprising a silicon substrate having a p-n junction; soft stamping a pattern of a UV sensitive photoresist and/or polymer onto the antireflective coating; exposing the UV sensitive photoresist and/or polymer to ultraviolet radiation to cure the UV sensitive photoresist and/or polymer; etching the pattern to form openings in the antireflective coating that define the contact grid; stripping the UV sensitive photoresist and/or polymer; and depositing a conductive metal into the openings defined by the pattern. The metal based paste can be aluminum based, which can be annealed at a relatively low temperature.

摘要翻译： 用于制造用于光伏电池的接触栅极的方法通常包括提供具有设置在面向太阳侧的抗反射涂层的光伏电池，所述光伏电池包括具有p-n结的硅衬底; 将UV敏感的光致抗蚀剂和/或聚合物的图案软化到抗反射涂层上; 将UV敏感的光致抗蚀剂和/或聚合物暴露于紫外线辐射以固化UV敏感的光致抗蚀剂和/或聚合物; 蚀刻图案以在防反射涂层中形成限定接触网格的开口; 剥离UV敏感的光致抗蚀剂和/或聚合物; 并将导电金属沉积到由图案限定的开口中。 金属基糊料可以是铝基，其可以在相对低的温度下退火。

公开(公告)号：US20080283919A1

公开(公告)日：2008-11-20

申请号：US12169190

申请日：2008-07-08

申请人： Harold J. Hovel ,  Thermon E. McKoy

发明人： Harold J. Hovel ,  Thermon E. McKoy

IPC分类号： H01L27/01 ,  H01L21/00

CPC分类号： H01L29/66772 ,  G01R31/2648 ,  H01L21/28512 ,  H01L21/84 ,  H01L22/14 ,  H01L22/34 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/66742 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78654 ,  H01L29/78687 ,  H01L31/08 ,  H01L2924/3011

摘要： Several methods and structures are disclosed for determining electrical properties of silicon-on-insulator (SOI) wafers and alternate versions of such wafers such as strained silicon:silicon/germanium:-on-insulator (SSGOI) wafers. The analyzed electrical properties include mobilities, interface state densities, and oxide charge by depositing electrodes on the wafer surface and measuring the current-voltage behavior using these electrodes. In a single gate structure, the source and drain electrodes reside on the wafer surface and the buried insulator acts as the gate oxide, with the substrate acting as the gate electrode. In a double gate structure, an oxide is used on the upper surface between the source and drain electrodes and an additional metal layer is used on top of this oxide to act as a second gate electrode. Light of broad spectrum or specific wavelength may be used to alter electrical carrier densities in the region between the electrodes to further analyze the electrical properties of the material, or alternatively, the device can be used as a detector of light having a wavelength shorter than the bandgap wavelength of the Si surface.

摘要翻译： 公开了几种方法和结构，用于确定绝缘体上硅（SOI）晶片的电性能以及诸如应变硅：硅/锗：绝缘体（SSGOI）晶片之类的晶片的替代形式。 通过在晶片表面上沉积电极并测量使用这些电极的电流 - 电压行为，所分析的电特性包括迁移率，界面态密度和氧化物电荷。 在单个栅极结构中，源极和漏极位于晶片表面上，埋入的绝缘体用作栅极氧化物，衬底用作栅电极。 在双栅极结构中，在源极和漏极之间的上表面上使用氧化物，并且在该氧化物的顶部上使用附加的金属层作为第二栅电极。 可以使用宽光谱或特定波长的光来改变电极之间的区域中的电载体密度，以进一步分析材料的电学性质，或者替代地，该器件可用作波长短于 Si表面的带隙波长。

公开(公告)号：US5569501A

公开(公告)日：1996-10-29

申请号：US483685

申请日：1995-06-07

申请人： Fredric D. Bailey ,  Douglas A. Buchanan ,  Alessandro C. Callegari ,  Howard M. Clearfield ,  Fuad E. Doany ,  Donis G. Flagello ,  Harold J. Hovel ,  Douglas C. Latulipe, Jr. ,  Naftali E. Lustig ,  Andrew T. S. Pomerene ,  Sampath Purushothaman ,  Christopher M. Scherpereel ,  David E. Seeger ,  Jane M. Shaw

发明人： Fredric D. Bailey ,  Douglas A. Buchanan ,  Alessandro C. Callegari ,  Howard M. Clearfield ,  Fuad E. Doany ,  Donis G. Flagello ,  Harold J. Hovel ,  Douglas C. Latulipe, Jr. ,  Naftali E. Lustig ,  Andrew T. S. Pomerene ,  Sampath Purushothaman ,  Christopher M. Scherpereel ,  David E. Seeger ,  Jane M. Shaw

IPC分类号： G03F1/08 ,  C01B31/06 ,  C08J7/06 ,  C23C8/26 ,  C23C8/50 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C30B29/04 ,  G02B1/10 ,  G11B5/255 ,  H01L21/31 ,  H01L21/314 ,  B05D3/06 ,  H05H1/24

CPC分类号： C23C16/26 ,  G02B1/105 ,  G11B5/255 ,  Y10S427/104 ,  Y10S427/106 ,  Y10T428/30

摘要： The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond-like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.

摘要翻译： 本发明涉及通过来自烃/氦等离子体的低温等离子体增强化学气相沉积（PECVD）将金刚石状碳膜沉积到衬底上的改进方法。 更具体地说，本发明的类金刚石碳膜通过采用以氦作为等离子体气体大量稀释的乙炔沉积在基板上。 使用本发明的方法形成的膜的特征在于是无定形的并且具有与通常对于金刚石膜观察到的那些相当的介电强度。 然而，更重要的是，本文制造的膜是热稳定的，光学透明的，在紫外范围内是吸收性的并且是硬的，因此使得它们对于各种各样的应用是非常需要的。

公开(公告)号：US4379005A

公开(公告)日：1983-04-05

申请号：US348526

申请日：1982-02-12

申请人： Harold J. Hovel ,  Jerry M. Woodall

发明人： Harold J. Hovel ,  Jerry M. Woodall

IPC分类号： H01L21/285 ,  H01L21/337 ,  H01L29/812 ,  H01L21/24

CPC分类号： H01L29/66924 ,  H01L21/28575 ,  H01L21/28581 ,  H01L21/28587 ,  H01L29/812 ,  Y10S438/916

摘要： Semiconductor devices can be fabricated using as an intermediate manufacturing structure a substrate of one semiconductor with a thin epitaxial surface layer of a different semiconductor with properties such that the semiconductors each have different solubilities with respect to a metal. When a vertical differentiation is used to expose the different materials and the metal is deposited on both and heated, the metal will form a Schottky barrier in one material and an ohmic contact in the other. Where the substrate is gallium arsenide and the epitaxial layer is gallium aluminum arsenide and the metal is tin, a self-aligned gallium arsenide MESFET is formed wherein the tin forms ohmic contacts with the gallium arsenide and a Schottky barrier contact with the gallium aluminum arsenide.

摘要翻译： 可以使用具有不同半导体的薄外延表面层的半导体衬底作为中间制造结构来制造半导体器件，其性能使得半导体对于金属具有不同的溶解度。 当使用垂直分化来暴露不同的材料并且金属沉积在两者上并被加热时，金属将在一种材料中形成肖特基势垒并在另一种材料中形成欧姆接触。 在衬底是砷化镓并且外延层是砷化镓铝并且金属是锡的情况下，形成自对准的砷化镓MESFET，其中锡与砷化镓形成欧姆接触，并与砷化镓砷化物进行肖特基势垒接触。