公开(公告)号：US20110051322A1

公开(公告)日：2011-03-03

申请号：US12868230

申请日：2010-08-25

Applicant: Victor L. Pushparaj ,  Omkaram Nalamasu ,  Steven Verhaverbeke

Inventor： Victor L. Pushparaj ,  Omkaram Nalamasu ,  Steven Verhaverbeke

IPC: H01L29/92 ,  H01L21/02 ,  C25D17/00 ,  B05C1/00

CPC classification number: H01M4/364 ,  B82Y99/00 ,  C23C16/24 ,  C23C16/44 ,  C23C16/54 ,  C23C28/00 ,  C25D11/005 ,  C25D11/32 ,  H01G11/28 ,  H01G11/36 ,  H01G11/86 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/6776 ,  H01M4/0428 ,  H01M4/0438 ,  H01M4/0442 ,  H01M4/0492 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/1395 ,  H01M4/366 ,  H01M4/38 ,  H01M4/386 ,  H01M4/587 ,  H01M4/661 ,  H01M10/0525 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54 ,  Y10T29/41 ,  Y10T29/417

Abstract: Embodiments of the present invention generally relate to methods and apparatus for forming an energy storage device. More particularly, embodiments described herein relate to methods of forming electric batteries and electrochemical capacitors. In one embodiment a method of forming a high surface area electrode for use in an energy storage device is provided. The method comprises forming an amorphous silicon layer on a current collector having a conductive surface, immersing the amorphous silicon layer in an electrolytic solution to form a series of interconnected pores in the amorphous silicon layer, and forming carbon nanotubes within the series of interconnected pores of the amorphous silicon layer.

Abstract translation: 本发明的实施例一般涉及用于形成能量存储装置的方法和装置。 更具体地，本文所述的实施例涉及形成电池和电化学电容器的方法。 在一个实施例中，提供了形成用于能量存储装置的高表面积电极的方法。 该方法包括在具有导电表面的集电器上形成非晶硅层，将非晶硅层浸入电解溶液中以在非晶硅层中形成一系列互连的孔，并在该系列互连孔内形成碳纳米管 非晶硅层。

公开(公告)号：US20100311204A1

公开(公告)日：2010-12-09

申请号：US12748790

申请日：2010-03-29

Applicant: VALERY V. KOMIN ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

Inventor： VALERY V. KOMIN ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

IPC: H01L31/18 ,  H01L21/283

CPC classification number: C23C14/086 ,  C23C14/541 ,  C23C14/56 ,  C23C14/5846 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/548

Abstract: Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

Abstract translation: 本文公开的实施例通常涉及在衬底上沉积透明导电氧化物层的工艺。 透明氧化物层有时沉积在衬底上，以供以后用于太阳能电池器件中。 可以通过“冷”溅射工艺沉积透明导电氧化物层。 换句话说，在溅射过程中，在处理室中点燃等离子体，其自然地加热基板。 在诸如从感受器的沉积期间不会向衬底提供额外的热量。 在沉积透明导电氧化物层之后，可以以任何顺序对衬底进行退火和蚀刻，以对透明导电氧化物层进行纹理化。 为了调整纹理的形状，可以使用不同的湿蚀刻化学物质。 可以使用不同的蚀刻化学物质来形成透明导电氧化物的表面和蚀刻速率。

公开(公告)号：US07836901B2

公开(公告)日：2010-11-23

申请号：US11977832

申请日：2007-10-26

Applicant: Steven Verhaverbeke ,  J. Kelly Truman ,  Alexander Ko ,  Rick R. Endo

Inventor： Steven Verhaverbeke ,  J. Kelly Truman ,  Alexander Ko ,  Rick R. Endo

IPC: B08B3/00 ,  B08B3/12 ,  B08B7/00

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  Y10S134/902

Abstract: An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

Abstract translation: 一种用于湿处理单个晶片的设备，包括： 用于保持晶片的装置; 用于向晶片的非器件侧提供声能的装置; 以及用于将流体流动到晶片的装置侧的装置。

公开(公告)号：US20100261049A1

公开(公告)日：2010-10-14

申请号：US12422739

申请日：2009-04-13

Applicant: BYUNG-SUNG LEO KWAK ,  Nety M. Krishna ,  Omkaram Nalamasu ,  Kaushal K. Singh ,  Steven Verhaverbeke

Inventor： BYUNG-SUNG LEO KWAK ,  Nety M. Krishna ,  Omkaram Nalamasu ,  Kaushal K. Singh ,  Steven Verhaverbeke

IPC: H01M6/46 ,  H01M6/00

CPC classification number: H01M10/0436 ,  H01G9/0029 ,  H01G9/012 ,  H01G9/15 ,  H01M10/052 ,  H01M10/0585 ,  Y02E60/13 ,  Y10T29/49115

Abstract: A readily manufacturable, high power, high energy, large area energy storage device is described. The energy storage device may use processes compatible with large area processing tools, such as large area coating systems and linear processing systems compatible with flexible thin film substrates. The energy storage devices may include batteries, super-capacitors and ultra-capacitors. An energy storage device may include a multiplicity of thin film cells formed on a single substrate, the multiplicity of cells being electrically connected in series, each one of the multiplicity of cells comprising: a current collector on the surface of the substrate; a first electrode on the current collector; a second electrode over the first electrode; and an electrolyte layer between the first electrode and the second electrode. Furthermore, an energy storage device may include a plurality of thin film cells formed on a single substrate, the plurality of cells being electrically connected in a network, the network including both parallel and serial electrical connections between individual cells of the plurality of cells.

Abstract translation: 描述了容易制造的大功率，高能量，大面积的储能装置。 能量存储装置可以使用与大面积加工工具兼容的工艺，例如与柔性薄膜基板兼容的大面积涂覆系统和线性处理系统。 储能装置可以包括电池，超级电容器和超电容器。 能量存储装置可以包括形成在单个基板上的多个薄膜单元，多个单元串联电连接，多个单元中的每一个包括：基板表面上的集电器; 集电器上的第一电极; 第一电极上的第二电极; 以及在第一电极和第二电极之间的电解质层。 此外，能量存储装置可以包括形成在单个基板上的多个薄膜单元，所述多个单元电连接在网络中，所述网络包括多个单元中各个单元之间的并联和串联电连接。

公开(公告)号：US07585686B2

公开(公告)日：2009-09-08

申请号：US11978004

申请日：2007-10-26

Applicant: Steven Verhaverbeke ,  J Kelly Truman ,  Christopher T Lane ,  Sasson R Somekh

Inventor： Steven Verhaverbeke ,  J Kelly Truman ,  Christopher T Lane ,  Sasson R Somekh

IPC: H01L21/66 ,  H01L21/00 ,  B65G25/00 ,  B66C17/08

CPC classification number: H01L21/67207 ,  G03F7/16 ,  H01L21/67115 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/6719 ,  Y10S414/135 ,  Y10S414/141 ,  Y10S438/905

Abstract: A method of a single wafer wet/dry cleaning apparatus comprising: a transfer chamber having a wafer handler contained therein; a first single wafer wet cleaning chamber directly coupled to the transfer chamber; and a first single wafer ashing chamber directly coupled to the transfer chamber.

Abstract translation: 一种单晶片湿式/干式清洗设备的方法，包括：一个传送室，其中包含一个晶片处理器; 直接耦合到传送室的第一单晶片湿清洁室; 以及直接耦合到传送室的第一单个晶片灰化室。

公开(公告)号：US20090026150A1

公开(公告)日：2009-01-29

申请号：US12284128

申请日：2008-09-17

Applicant: Steven Verhaverbeke ,  J. Kelly Truman ,  Rick R. Endo ,  Alexander Ko

Inventor： Steven Verhaverbeke ,  J. Kelly Truman ,  Rick R. Endo ,  Alexander Ko

IPC: B01D61/00 ,  B01F15/02

CPC classification number: B01F15/0454 ,  Y10T137/87652

Abstract: A method of and apparatus for mixing chemicals in a single wafer process. According to the present invention a chemical is fed into a valve system having a tube of a known volume. The chemical is fed into the valve system to fill the tube with a chemical to generate a measured amount of the chemical. The measured amount of chemical is then used in a single wafer process.

公开(公告)号：US20080314424A1

公开(公告)日：2008-12-25

申请号：US11977832

申请日：2007-10-26

Applicant: Steven Verhaverbeke ,  J. Kelly Truman ,  Alexander Ko ,  Rick R. Endo

Inventor： Steven Verhaverbeke ,  J. Kelly Truman ,  Alexander Ko ,  Rick R. Endo

IPC: B08B13/00

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/12 ,  B08B2203/0288 ,  Y10S134/902

Abstract: An apparatus for wet processing individual wafers comprising; a means for holding the wafer; a means for providing acoustic energy to a non-device side of the wafer; and a means for flowing a fluid onto a device side of the wafer.

公开(公告)号：US07456113B2

公开(公告)日：2008-11-25

申请号：US11146574

申请日：2005-06-06

Applicant: Ronald Rayandayan ,  Steven Verhaverbeke ,  Hong Wang

Inventor： Ronald Rayandayan ,  Steven Verhaverbeke ,  Hong Wang

IPC: H01L21/461

CPC classification number: H01L21/67051 ,  C11D1/29 ,  C11D1/72 ,  C11D3/044 ,  C11D3/32 ,  C11D3/33 ,  C11D3/3947 ,  C11D7/06 ,  C11D7/265 ,  C11D11/0047 ,  H01L21/02052

Abstract: The present invention is a method of use of a novel cleaning solution in a single wafer cleaning process. According to the present invention the method involves using a cleaning solution in a single wafer mode and the cleaning solution comprises at least ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. Moreover, the present invention also teaches a method of combining an ammonia hydroxide, hydrogen peroxide, and chelating agent step with a short HF step in a fashion that minimizes process time in a way that the entire method removes aluminum and iron contamination efficiently without etching too much oxide.The single wafer cleaning processes may also be used to increase the yield of high-grade reclaimed wafers.

Abstract translation: 本发明是在单晶片清洗工艺中使用新型清洗溶液的方法。 根据本发明，该方法包括以单晶片模式使用清洁溶液，并且清洁溶液至少包含氢氧化铵（NH 4 OH），过氧化氢（H 2 N 2 O） > O 2），水（H 2 O 2 O）和螯合剂。 在本发明的一个实施方案中，清洁溶液还含有表面活性剂。 此外，本发明还教导了一种将氨基氢氧化物，过氧化氢和螯合剂步骤与短HF步骤组合的方法，其方法是使整个方法有效地除去铝和铁污染物，而不会蚀刻，从而最小化处理时间 很多氧化物。 单晶片清洗工艺也可以用来提高高品质再生晶片的产量。

公开(公告)号：US07435686B2

公开(公告)日：2008-10-14

申请号：US11582223

申请日：2006-10-16

Applicant: Steven Verhaverbeke

Inventor： Steven Verhaverbeke

IPC: H01L21/302

CPC classification number: H01L21/02063 ,  G03F7/423 ,  G03F7/427 ,  H01L21/31133 ,  H01L21/76808

Abstract: A method of fabricating a semiconductor device. The method comprises subjecting a substrate having formed thereon photoresist layer to a plasma hydrogen, the substrate further having formed thereon a sacrificial layer; contacting the photoresist layer with a photoresist removal solution; subjecting the sacrificial layer to a plasma hydrogen; and contacting the sacrificial material layer with an etchant solution.

Abstract translation: 一种制造半导体器件的方法。 该方法包括使其上形成有光致抗蚀剂层的衬底经受等离子体氢，所述衬底还在其上形成牺牲层; 使光致抗蚀剂层与光致抗蚀剂去除溶液接触; 使牺牲层经受等离子体氢; 并使牺牲材料层与蚀刻剂溶液接触。

公开(公告)号：US20080230092A1

公开(公告)日：2008-09-25

申请号：US11690405

申请日：2007-03-23

Applicant: Alexander Sou-Kang Ko ,  Jianshe Tang ,  Brian J. Brown ,  Richard R. Endo ,  Steven Verhaverbeke ,  Cole Franklin ,  Dennis J. Yost ,  Runzi Chang

Inventor： Alexander Sou-Kang Ko ,  Jianshe Tang ,  Brian J. Brown ,  Richard R. Endo ,  Steven Verhaverbeke ,  Cole Franklin ,  Dennis J. Yost ,  Runzi Chang

IPC: B08B3/00

CPC classification number: B08B7/00 ,  B08B3/024 ,  B08B3/08 ,  H01L21/67051

Abstract: A single-substrate cleaning apparatus and method of use are described. In an embodiment of the present invention, a liquid cleaning solution is dispensed in small volumes to form a substantially uniform static liquid layer over a substrate surface by atomizing the viscous liquid with an inert gas in a two-phase nozzle. In another embodiment of the present invention, after a layer of the cleaning solution is formed over the substrate to be cleaned, acoustic energy is applied to the substrate to improve the cleaning efficiency. In a further embodiment, cleaning solution precipitates are avoided by dispensing de-ionized water with a spray nozzle to gradually dilute the cleaning solution prior to dispensing de-ionized water with a stream nozzle.

Abstract translation: 对单基板清洗装置及其使用方法进行说明。 在本发明的一个实施例中，通过在两相喷嘴中用惰性气体雾化粘性液体，以小体积分配液体清洗溶液以在基板表面上形成基本均匀的静态液体层。 在本发明的另一个实施方案中，在将清洁溶液层形成在要清洁的基底上之后，将声能施加到基底以提高清洁效率。 在另一个实施方案中，通过用喷嘴分配去离子水以在用流喷嘴分配去离子水之前逐渐稀释清洁溶液来避免清洁溶液沉淀物。